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Abstract The multi-lead electrocardiogram (ECG) is widely utilized in clinical diagnosis and monitoring of cardiac conditions. The advancement of deep learning has led to the emergence of automated multi-lead ECG diagnostic networks, which have become essential in the fields of biomedical engineering and clinical cardiac disease diagnosis. Intelligent ECG diagnosis techniques encompass Recurrent Neural Networks (RNN), Transformers, and Convolutional Neural Networks (CNN). While CNN is capable of extracting local spatial information from images, it lacks the ability to learn global spatial features and temporal memory features. Conversely, RNN relies on time and can retain significant sequential features. However, they are not proficient in extracting lengthy dependencies of sequence data in practical scenarios. The self-attention mechanism in the Transformer model has the capability of global feature extraction, but it does not adequately prioritize local features and cannot extract spatial and channel features. This paper proposes STFAC-ECGNet, a model that incorporates CAMV-RNN block, CBMV-CNN block, and TSEF block to enhance the performance of the model by integrating the strengths of CNN, RNN, and Transformer. The CAMV-RNN block incorporates a coordinated adaptive simplified self-attention module that adaptively carries out global sequence feature retention and enhances spatial–temporal information. The CBMV-CNN block integrates spatial and channel attentional mechanism modules in a skip connection, enabling the fusion of spatial and channel information. The TSEF block implements enhanced multi-scale fusion of image spatial and sequence temporal features. In this study, comprehensive experiments were conducted using the PTB-XL large publicly available ECG dataset and the China Physiological Signal Challenge 2018 (CPSC2018) database. The results indicate that STFAC-ECGNet surpasses other cutting-edge techniques in multiple tasks, showcasing robustness and generalization.

The monolithically integrated self-driven photoelectric detector (PD) with the light-emitting diode (LED) epitaxial structure completely relies on the built-in electric field in the multi-quantum wells region to separate the photogenerated carriers. Here, we propose a novel superlattices–electron barrier layer structure to expand the potential field region and enhance the detection capability of the integrated PD. The PD exhibits a record-breaking photo-to-dark current ratio of 5.14 × 107, responsivity of 110.3 A/W, and specific detectivity of 2.2 × 1013 Jones at 0 V bias, respectively. A clear open-eyed diagram of the monolithically integrated chip, including the PD, LED, and waveguide, is realized under a high-speed communication rate of 150 Mbps. The obtained transient response (rise/decay) time of 2.16/2.28 ns also illustrates the outstanding transient response capability of the integrated chip. The on-chip optical communication system is built to achieve the practical video signals transmission application, which is a formidable contender for the core module of future large-scale photonic integrated circuits.

Abstract The realization of high quality (0001) GaN on Si(100) is paramount importance for the monolithic integration of Si‐based integrated circuits and GaN‐enabled optoelectronic devices. Nevertheless, thorny issues including large thermal mismatch and distinct crystal symmetries typically bring about uncontrollable polycrystalline GaN formation with considerable surface roughness on standard Si(100). Here a breakthrough of high‐quality single‐crystalline GaN film on polycrystalline SiO2/Si(100) is presented by quasi van der Waals epitaxy and fabricate the monolithically integrated photonic chips. The in‐plane orientation of epilayer is aligned throughout a slip and rotation of high density AlN nuclei due to weak interfacial forces, while the out‐of‐plane orientation of GaN can be guided by multi‐step growth on transfer‐free graphene. For the first time, the monolithic integration of light‐emitting diode (LED) and photodetector (PD) devices are accomplished on CMOS‐compatible SiO2/Si(100). Remarkably, the self‐powered PD affords a rapid response below 250 µs under adjacent LED radiation, demonstrating the responsivity and detectivity of 2.01 × 105 A/W and 4.64 × 1013 Jones, respectively. This work breaks a bottleneck of synthesizing large area single‐crystal GaN on Si(100), which is anticipated to motivate the disruptive developments in Si‐integrated optoelectronic devices.

It aims to solve the problem that the evacuation state of pedestrians depicted by the traditional social force model in a crowded multiexit scenario has a relatively large difference with the actual state, especially the 'optimal path' considered by the self-driving force is the problem of shortest path, and the multiexit evacuation mode depicted by the 'herd behavior' is the local optimum problem. Through in-depth analysis of actual evacuation data of pedestrians and causes of problem, a new crowd evacuation optimization model is established in order to effectively improve the simulation accuracy of crowd evacuation in a multi-exit environment. The model obtains the direction of motion of pedestrians using a field model, fully considers the factors such as exit distance, distribution of pedestrians and regional crowding degree, makes a global optimization for the self-driving force in the social force model using a centralized and distributed network model, and makes a local optimization for it using an elephant herding algorithm, so as to establish a new evacuation optimization method for optimal self-adaption in the bottleneck area. The performance status is compared between the improved social force model and the new model by experiments, and the key factors that affect the new model are analyzed in an in-depth manner. The results show that the new model can optimize the optimal path choice at the early stage of evacuation and improve the evacuation efficiency of pedestrians at the late stage, so as to ensure relatively even distribution of pedestrians at each exit, and also make the simulated evacuation process be more real; and the improvement in overall evacuation efficiency is greater when the number of pedestrians to be evacuated is larger. Therefore, the new model provides a method to solve the phenomenon of disorder in overall pedestrian evacuation due to excessive crowd density during the process of multi-exit evacuation.

The application of a diammonium phosphate coating effectively mitigates direct contact between the phosphate fertilizer and the soil, thus minimizing phosphorus fixation. Humic acid holds a pivotal role in augmenting soil quality and activating the soil’s phosphorus reserves. Notably, when combined with humic acid, diammonium phosphate significantly enhances the utilization efficiency of phosphate fertilizer. However, there is a paucity of literature exploring the dynamics of nutrient transport in soil when humic acid is paired with coated phosphate fertilizers. To assess the impact of the combined application of coated diammonium phosphate and humic acid on wheat yield enhancement, we conducted pot experiments along with leaching and ammonia volatilization simulation tests, aiming to elucidate the effects of this combination on nutrient transport. The study explored the effects of three distinct treatments: coated diammonium phosphate (CP), coated diammonium phosphate combined with humic acid (PHA), and coated diammonium phosphate combined with humic acid (CPHA). The investigation focused on analyzing their impacts on wheat yield, ammonia volatilization, soil-available phosphorus, nitrate nitrogen, ammonium nitrogen, soil-available potassium, as well as the mobilization and transport of calcium and magnesium in the soil. (1) Compared to the P treatment, the PHA and CP treatments significantly increased grain yield by 17.2% and 13.5%, respectively. The PHA treatment also increased effective panicle number by 12.9%. Overall, the CP, PHA, and CPHA treatments improved grain yield by 13.5%, 17.2%, and 19.1% compared to the P treatment. (2) The CP and PHA treatments reduced available phosphorus by 95.6% and 49.2%, calcium by 2.0% and 67.0%, and magnesium by 11.6% and 46.1% compared to the P treatment. Ammonium nitrogen decreased by 37.0% and 64.3%, while nitrate nitrogen increased by 14.0% in CP and slightly decreased by 0.8% in PHA. In the leaching solution, PHA and CP treatments reduced available phosphorus by 96.7% and 62.5%, increased calcium by 5.0% and 78.9%, decreased ammonium nitrogen by 2.2% and 43.4%, and decreased nitrate nitrogen by 10.6% and 13.0%. The PHA and CPHA treatments increased available phosphorus in the 0–20 cm soil layer by 1.4 times and 25.8%, respectively. (3) The CP treatment reduced ammonia volatilization by 87.0% compared to the P treatment, while the CPHA treatment further reduced it by 87.5% compared to the PHA treatment. The application of coated diammonium phosphate efficiently delays nutrient release and reduces nutrient leaching in the soil. Additionally, the integration of humic acid significantly improves the availability of phosphorus in the soil, minimizing phosphorus loss. Notably, the combined application of humic acid and coated diammonium phosphate leads to a significant increase in soil phosphorus content, subsequently enhancing soil nutrient availability, conserving fertilizer, and ultimately resulting in an improved wheat yield.

Abstract As an emerging single crystals growth technique, the 2D-material-assisted epitaxy shows excellent advantages in flexible and transferable structure fabrication, dissimilar materials integration, and matter assembly, which offers opportunities for novel optoelectronics and electronics development and opens a pathway for the next-generation integrated system fabrication. Studying and understanding the lattice modulation mechanism in 2D-material-assisted epitaxy could greatly benefit its practical application and further development. In this review, we overview the tremendous experimental and theoretical findings in varied 2D-material-assisted epitaxy. The lattice guidance mechanism and corresponding epitaxial relationship construction strategy in remote epitaxy, van der Waals epitaxy, and quasi van der Waals epitaxy are discussed, respectively. Besides, the possible application scenarios and future development directions of 2D-material-assisted epitaxy are also given. We believe the discussions and perspectives exhibited here could help to provide insight into the essence of the 2D-material-assisted epitaxy and motivate novel structure design and offer solutions to heterogeneous integration via the 2D-material-assisted epitaxy method. Graphical Abstract

Abstract The frequency degree of freedom of optical photons has been recently explored for efficient quantum information processing. Significant reduction in hardware resources and enhancement of quantum functions can be expected by leveraging the large number of frequency modes. Here, we develope an integrated photonic platform for the generation and parallel processing of quantum frequency combs (QFCs). Cavity-enhanced parametric down-conversion with Sagnac configuration is implemented to generate QFCs with identical spectral distributions. On-chip quantum interference of different frequency modes is simultaneously realized with the same photonic circuit. High interference visibility is maintained across all frequency modes with the identical circuit setting. This enables the on-chip reconfiguration of QFCs. By deterministically separating QFCs without spectral filtering, we further demonstrate high-dimensional Hong-Ou-Mandel effect. Our work provides the critical step for the efficient implementation of quantum information processing with integrated photonics using the frequency degree of freedom.

This study focuses on the heavily Mg-doped GaN in which the passivation effect of hydrogen and the compensation effect of nitrogen vacancies (VN) impede its further development. To investigate those two factors, H ion implantation followed by thermal annealing was performed on the material. The evolution of relevant defects (H and VN) was revealed, and their distinct behaviors during thermal annealing were compared between different atmospheres (N2/NH3). The concentration of H and its associated yellow luminescence (YL) band intensity decrease as the thermal annealing temperature rises, regardless of the atmosphere being N2 or NH3. However, during thermal annealing in NH3, the decrease in H concentration is notably faster compared to N2. Furthermore, a distinct trend is observed in the behavior of the blue luminescence (BL) band under N2 and NH3. Through a comprehensive analysis of surface properties, we deduce that the decomposition of NH3 during thermal annealing not only promotes the out-diffusion of H ions from the material, but also facilitates the repair of VN on the surface of heavily Mg-doped GaN. This research could provide crucial insights into the post-growth process of heavily Mg-doped GaN.

Imbalance in the microbiota has been identified in Crohn's disease (CD). We explored the difference of the microbiota in fecal and intestinal mucosa (including ileocecal junction, terminal ileum and transverse colon) in pediatric patients with active CD, CD patients in remission, nonspecific enteritis (NE) and the healthy children. Seven children had active CD, 5 cases of patients achieve remission (CDR), 19 were NE patients, and 11 were healthy controls (Col). A total of 168 samples were collected. Microbiota compositions were analyzed using 16 ​S rRNA sequencing. The results showed that, in fecal samples, Clostridium_sensu_stricto, Enterobacter and Akkermansia had a higher relative abundance in the CD group than that in CDR, Col and NE groups. Fusobacterium and Streptococcus showed a higher abundance in both CD and CDR than that in Col group. In intestinal mucosa samples, the bacterial communities of the three sampling sites were extremely similar. Escherichia-Shigella was the most abundant mucosal bacteria in the CD group, and the abundance of Bacillus, Ruminococcus_torques_group, Streptococcus, Faecalibacterium and Blautia was lower in the CD group than in other groups. In conclusion, as a very characteristic bacteria, the abundance of Escherichia-Shigella in the intestinal mucosa can be used as a diagnostic criterion for CD patients. Also, the Bacilus and Blautia, which were not as prominent as Escherichia-Shigella could still be used as a diagnostic candidate due to their neatness in CD patients. Mucosal samples may be better than stool samples when assessing the community and diversity of patients' intestinal microbes.

This work successfully achieves a strain-free AlN film with low dislocation density for DUV-LED through graphene-driving strain-pre-store engineering and present the unique mechanism of strain-relaxation in QvdW epitaxy.

Conventional potassium chloride granules have inefficient applications in agricultural production due to particle irregularity and low fluidity. The application of controlled-release potassium chloride could increase the potassium-use efficiency and alleviate the shortage of potassium ore resources. In this study, a well-rounded potassium chloride fertilizer core was prepared, using the graft modification of polyurea to enhance the coating rate and release performance. The adhesive and tensile characteristics of the modified polyurea binder, as well as the granule properties of modified polyurea binder potassium chloride, were studied to determine the ideal lignin-grafted ratio. The effect of the modified polyurea binder with potassium chloride on the properties of coated fertilizer was investigated. The findings, shown by radar maps of the binder’s properties, demonstrated that the ideal mass ratio of the modified lignin polyurea binder to urea is 1:2. The Fourier-transform infrared spectroscopy results demonstrated that the amino functional groups of lignin were enhanced, improving the product’s interfacial compatibility with the polyurea matrix. Compared to humic acid (HA; 12%) and bentonite (Ben; 30%) treatments, the granule intensity of the 9.9%—1:2 treatment considerably increased by 139.10% and 38.86%, respectively, while the static angle of the granules reduced by 16.67% and 3.81%. The 28-day cumulative release rate of the modified polyurea (9.9%—2:1) with a 5% coating thickness was the lowest (28%), 42% lower than that of the lowest conventional treatment. In summary, the creation of a bio-lignin polyurea binder under the optimum conditions reduced the need for petrochemical-based materials, allowed the preparation of fertilizer with granules of increased fluidity, and enabled the successful coating of a high-salt potassium fertilizer, offering a novel technique for the high-value application of potash fertilizer coating.

In this work, we fabricated and characterized 4 × 4 parallel flip-chip AlGaN-based micro-LED arrays with varied mesa diameters of 120 µm, 100 µm, 80 µm, and 60 µm. The reported micro-LED arrays have a maximum bandwidth of 380 MHz and a peak wavelength of ∼275 nm. It is found that the electrical and optical characteristics of AlGaN-based micro-LED arrays show strong size dependence for ultraviolet communication (UVC). The differential resistance increases from 28.8 Ω to 112 Ω, the external quantum efficiency (EQE) is increased by ∼30%, and the bandwidth doubles as the diameter of individual micro-LED decreases from 120 µm to 60 µm. Our research proves that tailoring the mesa size of parallel flip-chip AlGaN-based micro-LED arrays can further enhance its bandwidth and promote its application in UVC.

Hexagonal boron nitride (h-BN) is one promising material class for applications in DUV optoelectronics due to the layered structure and ultra-wide bandgap. The synthesis of h-BN with smooth surface morphology and high quality on dielectric substrates is the key to construct efficient functional devices thereon. In this study, we reported wafer-scale h-BN on c-plane sapphire substrates by metal organic chemical vapor deposition utilizing the flow modulation epitaxy (FME) with growth interruptions. The effect of the growth interruption location within FME on the surface morphology and crystalline quality of h-BN films was systematically investigated. The interruption after the TEB injection could promote the mobility of B adatoms, and the interruption after the NH3 injection could further relieve the passivation of N terminal growth fronts and mitigate the parasitic gas-phase reaction between growth precursors. By simultaneously employing interruptions after TEB and NH3 injections, the growth rate of h-BN increased significantly from 0.16 nm/min to 4.76 nm/min, and the surface roughness of 2-nm-thick h-BN was reduced to 0.587 nm. In addition, h-BN grown with an interruption solely after the NH3 injection presented the best crystallinity because the relatively slow growth rate reduced the possibility of impurity incorporation.

Frequency combs are useful for precision measurements and to explore atomic and molecular transitions. Here Liu et al. demonstrate photonic chip-based ultraviolet frequency combs of high coherence and broad spectral bandwidth by implementing cubic and quadratic nonlinearities in a non-centrosymmetric material.

Metal-assisted chemical etching plays a critical role in synthesizing GaN nanowires. In this work, GaN films grown on Si(111) substrates are immersed in CuSO4/HF etchant under UV illumination to fabricate nanowires. These GaN nanowires are much more homogeneous than those synthesized in AgNO3/HF etchant. During the etching process, Cu and Ag particles appear primarily at the cracks in GaN films where the atoms are more reactive. After that, Cu accumulates continuously at the cracks, while Ag dendrites are formed and spread all over the whole GaN surface. These phenomena are ascribed to the different nucleation rates and diffusion rates of Ag and Cu. The metal particles thus formed block out ultraviolet illumination, and suppress the etching of GaN. It is the orderly accumulation of Cu particles that enables uniform photochemical etching. Our work proposes a novel metal-assisted photochemical etching method for synthesizing uniform GaN nanowires and reveals the physical distribution of the metal during etching. This method has the potential for rapid preparation of GaN nanowires. Keywords: Metal-assisted chemical etching, GaN nanowires, Ag dendrites, Cu particles

In this study, we demonstrate the phosphor-free hybrid white LED devices with the combination of the truncated-hexagonal-pyramid (THP) structures and quantum dots (QDs) (THPQD). In the THP structures, it is noted that the broad spectrum can be obtained from different microfacets. Moreover, the THP structures make the far-field viewing angle decrease by ~45.4° and improve the light extraction efficiency compared with the traditional LED. The simulations also show that the light extraction efficiency of the THP LED is as approximately seven times as high as that of the traditional LED. Furthermore, by controlling the selective area growth (SAG) and adding QDs, the white emission can be realized from the THPQD LED with high color-rendering index (CRI). The CRI of the THPQD LED is from 71.2 up to 87.2 with the change of driving different current and its correlated color temperature covers the scope from 4845 to 5877 K.

AlGaN-based deep UV (DUV) LEDs generally employ a p-type electron blocking layer (EBL) to suppress electron overflow. However, Al-rich III-nitride EBL can result in challenging p-doping and large valence band barrier for hole injection as well as epitaxial complexity. As a result, wall plug efficiency (WPE) can be compromised. Our systematic studies of band diagram and carrier concentration reveal that carrier concentrations in the quantum well and electron overflow can be significantly impacted because of the slope variation of the quantum barrier (QB) conduction and valence bands, which in turn influence radiative recombination and optical output power. Remarkably, grading the Al composition from 0.60 to 0.70 for the 12-nm-thick AlGaN QB of the DUV LED without the EBL can lead to 13.5% higher output power and similar level of overflown electron concentration (~1 × 1015/cm3) as opposed to the conventional DUV LED with the p-type EBL. This paradigm is significant for the pursuit of higher WPE or shorter emission wavelength for DUV LEDs and lasers, as it provides a new direction for addressing electron overflow and hole injection issues.

Constant advance in improving the luminous efficacy (ηL) of nitride-based light-emitting diodes (LEDs) plays a critical role for saving measurable amounts of energy. Further development is motivated to approach the efficiency limit for this material system while reducing the costs. In this work, strategies of using thin AlN prebuffer and transitional-refraction-index patterned sapphire substrate (TPSS) were proposed, which pushed up the efficiency of white LEDs (WLEDs). The AlN prebuffer was obtained through physical vapor deposition (PVD) method and TPSS was fabricated by dry-etched periodic silica arrays covered on sapphire. Devices in mass production confirmed that PVD AlN prebuffer was able to improve the light output power (φe) of blue LEDs (BLEDs) by 2.53% while increasing the productivity by ~8% through shortening the growth time. Additionally, BLEDs on TPSS exhibited an enhanced top ηext of 5.65% in contrast to BLEDs on the conventional PSS through Monte Carlo ray-tracing simulation. Consequently, φe of BLEDs was experimentally enhanced by 10% at an injected current density (Jin) of 40 A/cm2. A peak ηL of 295.2 lm/W at a Jin of 0.9 A/cm2 and the representative ηL of 282.4 lm/W at a Jin of 5.6 A/cm2 for phosphor-converted WLEDs were achieved at a correlated color temperature of 4592 K.

Abstract Efficient and low‐cost production of high‐quality aluminum nitride (AlN) films during heteroepitaxy is the key for the development of deep ultraviolet light‐emitting diodes (DUV‐LEDs). Here, the quasi‐2D growth of high‐quality AlN film with low strain and low dislocation density on graphene (Gr) is presented and a high‐performance 272 nm DUV‐LED is demonstrated. Guided by first‐principles calculations, it is found that AlN grown on Gr prefers lateral growth both energetically and kinetically, thereby resulting in a Gr‐driven quasi‐2D growth mode. The strong lateral growth mode enables most of dislocations to annihilate each other at the AlN/Gr interface, and therefore the AlN epilayer can quickly coalesce and flatten the nanopatterned sapphire substrate. Based on the high quality and low strain of AlN film grown on Gr, the as‐fabricated 272 nm DUV‐LED shows a 22% enhancement of output power than that with low‐temperature AlN buffer, following a negligible wavelength shift under high current. This facile strategy opens a pathway to drastically improve the performance of DUV‐LEDs.

The light extraction efficiency (LEE) of different polarization modes have been simulated by FDTD solutions for three photonic crystal (PhC) structures, which are spherical-PhC LED, cylindrical-PhC LED and compound-PhC LED. The TE-and TM-mode LEE are simulated seperately. It shows that the discontinuity of the structure from the propagation direction will cause decrease of TE-mode and TM-mode LEE. TE and TM mode are enhanced by 60% and 40% in cylindrical-PhC LED, in which the single nanorod act as light waveguide. Finally, a multi-layer-compound-PhC-LED is proposed. Results show that the TM-mode LEE based on this structure is increased by 1.45 times at a wavelength of 532 nm, and the TM-mode illuminous intensity will be larger than that of TE mode, and then polarization inversion occurs. Keywords: Photonic crystals, Polarization, GaN-based LED, Light extraction efficiency

With the development of wireless optical communication and solid-state lighting, the high efficiency, large bandwidth, and high uniform white light source becomes more and more important. In this paper, a white light source generated by red, green, and blue laser diodes (RGB LDs) was synthetized according to the calculated power ratio of RGB LDs based on the chromaticity theory. The high coherence of the lasers normally leads to the nonuniform white light. Thus, it is to improve the illumination quality of the lighting source by employing micro lens for the purpose of homogenization. The simulation results showed that the uniformity of the white light incoherent radiation was above 90% which proves that the coherence of the lasers was destroyed. In addition, the photoelectric parameters of the RGB-LD mixed white light after homogenization was characterized. Meanwhile, the modulation bandwidth of RGB LDs before and after homogenization was analyzed, respectively, and it shows that the bandwidth was more than 1 GHz, which is limited by the photodetector cut-off frequency. Such a high-uniformity and high-speed RGB-LD mixed white light can be deployed for illumination and wireless communication simultaneously.

Abstract Background Varicella zoster virus (VZV) reactivation spans the spectrum from uncomplicated segmental herpes zoster to life-threatening disseminated CNS infection. Moreover, in the absence of a small animal model for this human pathogen, studies of pathogenesis at the organismal level depend on analysis of human biosamples. Changes in cerebrospinal fluid (CSF) metabolites may reflect critical aspects of host responses and end-organ damage in neuroinfection and neuroinflammation. We therefore applied a targeted metabolomics screen of CSF to three clinically distinct forms of VZV reactivation and infectious and non-infectious disease controls in order to identify biomarkers for CNS involvement in VZV reactivation. Methods Metabolite profiles were determined by targeted liquid chromatography-mass spectrometry in CSF from patients with segmental zoster (shingles, n = 14), facial nerve zoster (n = 16), VZV meningitis/encephalitis (n = 15), enteroviral meningitis (n = 10), idiopathic Bell’s palsy (n = 11), and normal pressure hydrocephalus (n = 15). Results Concentrations of 88 metabolites passing quality assessment clearly separated the three VZV reactivation forms from each other and from the non-infected samples. Internal cross-validation identified four metabolites (SM C16:1, glycine, lysoPC a C26:1, PC ae C34:0) that were particularly associated with VZV meningoencephalitis. SM(OH) C14:1 accurately distinguished facial nerve zoster from Bell’s palsy. Random forest construction revealed even more accurate classifiers (signatures comprising 2–4 metabolites) for most comparisons. Some of the most accurate biomarkers correlated only weakly with CSF leukocyte count, indicating that they do not merely reflect recruitment of inflammatory cells but, rather, specific pathophysiological mechanisms. Across all samples, only the sum of hexoses and the amino acids arginine, serine, and tryptophan correlated negatively with leukocyte count. Increased expression of the metabolites associated with VZV meningoencephalitis could be linked to processes relating to neuroinflammation/immune activation, neuronal signaling, and cell stress, turnover, and death (e.g., autophagy and apoptosis), suggesting that these metabolites might sense processes relating to end-organ damage. Conclusions The results provide proof-of-concept for the value of CSF metabolites as (1) disease-associated signatures suggesting pathophysiological mechanisms, (2) degree and nature of neuroinflammation, and (3) biomarkers for diagnosis and risk stratification of VZV reactivation and, likely, neuroinfections due to other pathogens. Trial registration Not applicable (non-interventional study).

Conventionally, Cu is preferred over Al to fabricate integrated inductors with higher quality factors on either silicon or sapphire substrates, profiting from its lower resistivity. However, after investigating and comparing these two kinds of metal multilayers in terms of fabrication process, electrical conductivity, in-depth profile analysis and performance of actual inductors, the Al-based metal multilayer exhibits competitive ability in fabricating thin-film inductors on sapphire compared to Cu-based multilayers. This is attributed to the degradation in electrical conductivity out of oxidation of Cu-based metal sublayers or forming alloys between them. Furthermore, in order to avoid complicated de-embedding procedures in the characterization of the on-chip inductors, a six-element equivalent physical model, which takes the parasitic effect of radio-frequency (RF) test structures into account, is proposed and validated by matching well with embedded measurement results.

InGaN-based micro-structured light-emitting diodes (µLEDs) play a critical role in the field of full-color display. In this work, selected area growth (SAG) of a micro-pyramid LED array was performed on a 2-inch wafer-scale patterned SiO2 template (periodicity: 4 µm diameter), by which a uniform periodic µLED array was achieved. The single-element pyramid-shaped LED exhibited 6 equivalent semipolar {1-101} planes and a size of about 5 µm, revealing a good crystalline quality with screw and edge dislocation densities of 8.27 × 107 and 4.49 × 108 cm−2. Due to the stress–relaxation out of the SAG, the as-built compressive strain was reduced to 0.59 GPa. The µLED array demonstrated a stable emission, confirmed by a small variation of electroluminescence (EL) peak wavelength over a wide range of current density up to 44.89 A/cm2, as well as tiny fluctuations (within 1.9 nm) in the EL full width at half maximum. The photoluminescence peak wavelength exhibits a good uniformity throughout the whole wafer with a discrete probability of only 0.25%.

We fabricated InGaN/GaN nanorod light emitting diode (LED) on (-201) β-Ga2O3 substrate via the SiO2 nanosphere lithography and dry-etching techniques. The InGaN/GaN nanorod LED grown on β-Ga2O3 can effectively suppress quantum confined Stark effect (QCSE) compared to planar LED on account of the strain relaxation. With the enhancement of excitation power density, the photoluminescence (PL) peak shows a large blue-shift for the planar LED, while for the nanorod LED, the peak position shift is small. Furthermore, the simulations also show that the light extraction efficiency (LEE) of the nanorod LED is approximately seven times as high as that of the planar LED. Obviously, the InGaN/GaN/β-Ga2O3 nanorod LED is conducive to improving the optical performance relative to planar LED, and the present work may lay the groundwork for future development of the GaN-based vertical light emitting diodes (VLEDs) on β-Ga2O3 substrate.

With the development of large-scale new energy, the wind–thermal bundled system transmitted via high-voltage direct current (HVDC) has become the main method to solve the problem of wind power consumption. At the same time, the problem of subsynchronous oscillation among wind power generators, high-voltage direct current (HVDC), and synchronous generators (SGs) has become increasingly prominent. According to the dynamic interaction among doubly fed induction generators (DFIGs), HVDC, and SGs, a linearization model of DFIGs and SGs transmitted via HVDC is established, and the influence of the electromagnetic transient of wind turbines and HVDC on the electromechanical transient processes of SGs is studied. Using the method of additional excitation signal injection, the influence of the main factors of DFIG on the damping characteristics of each torsional mode of SG is analyzed, including control parameters and operation conditions when the capacity of HVDC is fixed. The mechanism of the negative damping torsional of SGs is identified. A time-domain simulation model is built in Electromagnetic Transients including DC/Power Systems Computer Aided Design (EMTDC/PSCAD) to verify the correctness and effectiveness of the theoretical analysis.

Electron-leakage is a deep-rooted problem for nitride-based light-emitting diodes (LEDs), particularly for AlGaN-based deep-ultraviolet (DUV) LEDs. In this paper, a specific design for the electron-blocking structure in AlGaN DUV LEDs, increasing the Al composition of the last quantum barrier to the same value as that of the electron-blocking layer accompanied with composition-graded p-AlGaN layer, is proposed to reduce electron leakage. Simulation results demonstrate that this design can effectively reduce electron leakage and hence increase internal quantum efficiency. Furthermore, fabricated devices with at an emitting wavelength of 292 nm verify remarkably enhanced light-output power. At 20-mA injection current, the proposed structure achieved a light-output increment as high as 98%, compared with the conventional structure.

In this paper, we experimentally demonstrated a novel approach known as electroless silver plating (ESP) for the fabrication of Ag-only reflectors on vertical light-emitting diodes (VLEDs). The Ag reflector that was obtained through the ESP approach shows a higher reflectance of 83% and a lower contact resistivity of 6 * 10-3 Ω · cm2 with p-GaN, compared with that fabricated through the conventional electron beam (EB) approach, which shows a reflectance of 75% and a contact resistivity of 6.2 * 10-2 Ω · cm2, respectively. Improvements in the light output intensity-current (L-I) and current-voltage (I-V) results in VLEDs, which originated from the high reflectance and low-contact resistivity of the incorporated ESP-Ag reflector. Our result opens up an alternative and promising way to substitute the traditional EB approach for Ag-based reflector fabrication and, thus, is practically meaningful in real device fabrication, such as with VLEDs.

In this paper, isoelectronic doping with indium (In) in p-GaN is investigated on the basis of the thermal quenching of ultraviolet luminescence (UVL) band. A phenomenological rate-equation model is proposed as a nondestructive diagnostic technique to acquire the dopant ionization energy of p-GaN. In terms of this model, we analyze the evolution of the ionization energy of p-GaN samples grown with different trimethyindium flow rate and find that isoelectronic doping with appropriate In incorporation is able to significantly reduce the ionization energy of the acceptor from 245 to 112 meV, which are consistent with the results of the variable temperature Hall-effect measurements. The comparison between the samples' full width at half maximum of the UVL band indicates that excessive In incorporation will degenerate the conductivity of p-GaN.

We report on the maskless epitaxial lateral overgrowth (ELOG) of the AlN layer on trench-patterned AlN/sapphire templates by metal-organic chemical vapor deposition (MOCVD). With a two-phase growth of different V/III ratio at a relatively low growth temperature of 1250 °C, up to a 7.3-μm-thick high-quality crack-free AlN film with a threading dislocation density of 8 × 108 cm-2 was obtained. Compared with the 0.9-μm AlN film grown on a planar sapphire substrate, the ELOG-AlN film has a lower dislocation density and a much better strain state, regardless of its 7.3-μm thickness. Compared with the single low V/III ratio growth, the two-phase growth method can lead to a coherent coalescence at the second growth stage and hence suppress new dislocations generating at the coalescence fronts. Stimulated emission was observed from Al(Ga)N multi-quantum-wells laser grown on the ELOG-AlN template with low dislocation density. The deep-ultraviolet laser (DUV) on these templates exhibited lasing at 263.3 nm with the spectral linewidth of 1.29 nm and threshold pumping power density of 2.7 MW/cm2 at room temperature.

The growth of nitride on large-size and low-cost amorphous substrates has attracted considerable attention for applications in large-scale optoelectronic devices. In this paper, we reported the growth of GaN-based light-emitting diodes (LEDs) on amorphous SiO2 substrate with the use of nanorods and graphene buffer layers by metal organic chemical vapor deposition (MOCVD). The effect of different growth parameters on the morphology and vertical-to-lateral aspect ratio of nanorods was discussed by analyzing growth kinetics. Furthermore, we tuned nanorod coalescence to obtain continuous GaN films with a blue-LED structure by adjusting growth conditions. The GaN films exhibited a hexagonal wurtzite structure and aligned c-axis orientation demonstrated by X-ray diffractometer (XRD), Raman, and transmission electron microscopy (TEM) results. Finally, five-pair InGaN/GaN multi-quantum-wells (MQWs) were grown. The photoluminescence (PL) showed an intense emission peak at 475 nm, and the current–voltage (I-V) curve shows a rectifying behavior with a turn-on voltage of 5.7 V. This work provides a promising fabrication method for the large-area and low-cost GaN-based devices on amorphous substrates and opens up the further possibility of nitride integration with Si (100) complementary metal oxide semiconductor (CMOS) electronics.

The degradation mechanism of mid-power GaN-based white LEDs were investigated by using the in-situ multi-functional accelerated aging tests. The changes of the luminous flux and the chromaticity shift during the stress time show some correlations. To quantitatively analyze the degradation behavior, a composite model considering the luminous flux increasing and decreasing mechanisms was proposed and the results agree well with the experiments in the entire aging time. Furthermore, different analytical technologies have been used to understand the cause of luminous flux degradation and chromaticity shift. The results show that the chromaticity shift was mainly due to the phosphors deterioration, while the serious degradation of luminous flux was the overall effects from the package, including the phosphors deterioration and oxidation of silicone encapsulant.

In this work, efficiency droop of InGaN/GaN multiple-quantum-well LEDs with super wide well (WW) is discussed by comparing the external quantum efficiency (EQE) of GaN grown on sapphire and FS-GaN substrates. The luminescence and electrical characteristics of these WW LEDs are also experimentally and theoretically analyzed. With the increase of well width from 3 nm to 6 nm, high V-pits density and more strain relaxation are found in WW LED on sapphire, which exhibits greatly reduced peak efficiency but almost negligible droop behavior. In contrast, despite a larger polarization field, WW LED on FS-GaN shows obviously enhanced peak efficiency and comparable droop compared to the counterpart with 3-nm well. The Auger recombination probably dominates the mechanism of efficiency droop rather than defect-related nonradiative recombination or polarization effect in the WW LED on both sapphire and FS-GaN, especially at high current density.

β-Ga2O3, characterized with high n-type conductivity, little lattice mismatch with III-Nitrides, high transparency (>80%) in blue, and UVA (400–320 nm) as well as UVB (320–280 nm) regions, has great potential as the substrate for vertical structure blue and especially ultra violet LEDs (light emitting diodes). Large efforts have been made to improve the quality of III-Nitrides epilayers on β-Ga2O3. Furthermore, the fabrication of vertical blue LEDs has been preliminarily realized with the best result that output power reaches to 4.82 W (under a current of 10 A) and internal quantum efficiency (IQE) exceeds 78% by different groups, respectively, while there is nearly no demonstration of UV-LEDs on β-Ga2O3. In this review, with the perspective from materials to devices, we first describe the basic properties, growth method, as well as doping of β-Ga2O3, then introduce in detail the progress in growth of GaN on (1 0 0) and (−2 0 1) β-Ga2O3, followed by the epitaxy of AlGaN on gallium oxide. Finally, the advances in fabrication and performance of vertical structure LED (VLED) are presented.

Van der Waals epitaxy (vdWE) has drawn continuous attention, as it is unlimited by lattice-mismatch between epitaxial layers and substrates. Previous reports on the vdWE of III-nitride thin film were mainly based on two-dimensional (2D) materials by plasma pretreatment or pre-doping of other hexagonal materials. However, it is still a huge challenge for single-crystalline thin film on 2D materials without any other extra treatment or interlayer. Here, we grew high-quality single-crystalline AlN thin film on sapphire substrate with an intrinsic WS2 overlayer (WS2/sapphire) by metal-organic chemical vapor deposition, which had surface roughness and defect density similar to that grown on conventional sapphire substrates. Moreover, an AlGaN-based deep ultraviolet light emitting diode structure on WS2/sapphire was demonstrated. The electroluminescence (EL) performance exhibited strong emissions with a single peak at 283 nm. The wavelength of the single peak only showed a faint peak-position shift with increasing current to 80 mA, which further indicated the high quality and low stress of the AlN thin film. This work provides a promising solution for further deep-ultraviolet (DUV) light emitting electrodes (LEDs) development on 2D materials, as well as other unconventional substrates.

High-resistive layers were obtained by periodic growth and in situ annealing of InGaN. The effect of the annealing temperature of InGaN on the indium content and the material sheet resistive was investigated. The indium content decreased as the increase of in situ annealing temperature. Additionally, the material sheet resistance increased with the increase of the in situ annealing temperature for the annealed samples and reached 2 × 1010Ω/sq in the light and 2 × 1011Ω/sq in the dark when the in situ annealing temperature reached 970∘C. The acquirement of high-resistive layers is attributed to the generation of indium vacancy-related defects. Introducing indium vacancy-related defects to compensate background carriers can be an effective method to grow high-resistance material.

GaN-based flip-chip light-emitting diodes (FC-LEDs) grown on nanopatterned sapphire substrates (NPSS) are fabricated using self-assembled SiO2 nanospheres as masks during inductively coupled plasma etching. By controlling the pattern spacing, epitaxial GaN can be grown from the top or bottom of patterns to obtain two different GaN/substrate interfaces. The optoelectronic characteristics of FC-LED chips with different GaN/sapphire interfaces are studied. The FC-LED with an antireflective interface layer consisting of a NPSS with GaN in the pattern spacings demonstrates better optical properties than the FC-LED with an interface embedded with air voids. Our study indicates that the two types of FC-LEDs grown on NPSS show higher crystal quality and improved electrical and optical characteristics compared with those of FC-LEDs grown on conventional planar sapphire substrates.

The degradation behaviors of high power GaN-based vertical blue LEDs on Si substrates were measured using in-situ accelerated life test. The results show that the dominant failure mechanism would be different during the operation. Besides that, the corresponding associated failure mechanisms were investigated systematically by using different analysis technologies, such as Scan Electron Microscopy, Reflectivity spectroscopy, Transient Thermal Analysis, Raman Spectra, etc. It is shown that initially, the failure modes were mainly originated from the semiconductor die and interconnect, while afterwards, the following serious deterioration of the radiant fluxes was attributed to the package. The interface material and quality, such as die attach and frame, play an important role in determining the thermal performance and reliability. In addition, the heating effect during the operation will also release the compressive strain in the chip. These findings will help to improve the reliability of GaN-based LEDs, especially for the LEDs with vertical structure.

To evaluate electron leakage in InGaN/GaN multiple quantum well (MQW) light emitting diodes (LEDs), analytic models of ballistic and quasi-ballistic transport are developed. With this model, the impact of critical variables effecting electron leakage, including the electron blocking layer (EBL), structure of multiple quantum wells (MQWs), polarization field, and temperature are explored. The simulated results based on this model shed light on previously reported experimental observations and provide basic criteria for suppressing electron leakage, advancing the design of InGaN/GaN LEDs.

In this work, a novel carrier concentration adjusting insertion layer for InGaN/GaN multiple quantum wells light-emitting diodes was proposed to mitigate the efficiency droop and improve optical output properties at high current density. The band diagrams and carrier distributions were investigated numerically and experimentally. The results indicate that due to the newly formed electron barrier and the adjusted built-in field near the active region, the hole injection has been improved and a better radiative recombination can be achieved. Compared to the conventional LED, the light output power of our new structure with the carrier concentration adjusting layers is enhanced by 127% at 350 mA , while the efficiency only droops to be 88.2% of its peak efficiency.

High density of defects and stress owing to the lattice and thermal mismatch between nitride materials and heterogeneous substrates have always been important problems and limit the development of nitride materials. In this paper, AlGaN light-emitting diodes (LEDs) were grown directly on a single-layer graphene-covered Si (111) substrate by metal organic chemical vapor deposition (MOCVD) without a metal catalyst. The nanorods was nucleated by AlGaN nucleation islands with a 35% Al composition, and included n-AlGaN, 6 period of AlGaN multiple quantum wells (MQWs), and p-AlGaN. Scanning electron microscopy (SEM) and electron backscatter diffraction (EBSD) showed that the nanorods were vertically aligned and had an accordant orientation along the [0001] direction. The structure of AlGaN nanorod LEDs was investigated by scanning transmission electron microscopy (STEM). Raman measurements of graphene before and after MOCVD growth revealed the graphene could withstand the high temperature and ammonia atmosphere in MOCVD. Photoluminescence (PL) and cathodoluminescence (CL) characterized an emission at ~325 nm and demonstrated the low defects density in AlGaN nanorod LEDs.

In this work, novel double Electron Blocking Layers for InGaN/GaN multiple quantum wells light-emitting diodes were proposed to mitigate the efficiency droop at high current density. The band diagram and carriers distributions were investigated numerically. The results indicate that due to a newly formed holes stack in the p-GaN near the active region, the hole injection has been improved and an uniform carriers distribution can be achieved. As a result, in our new structure with double Electron Blocking Layers, the efficiency droop has been reduced to 15.5 % in comparison with 57.3 % for the LED with AlGaN EBL at the current density of 100 A/cm2.

Large-scale Ag nanodisks (NDs) arrays fabricated using nanospherical-lens lithography (NLL) are embedded in p-GaN layer of an InGaN/GaN light-emitting diode (LED) for generating localized surface plasmon (LSP) coupling with the radiating dipoles in the quantum-well (QWs). Based on the Ag NDs with the controlled surface coverage, LSP leads to the improved crystalline quality of regrowth p-GaN, increased photoluminescence (PL) intensity, reduced PL decay time, and enhanced output power of LED. Compared with the LED without Ag NDs, the optical output power at a current of 350 mA of the LSP-enhanced LEDs with Ag NDs having a distance of 20 and 35 nm to QWs is increased by 26.7% and 31.1%, respectively. The electrical characteristics and optical properties of LEDs with embedded Ag NPs are dependent on the distance of between Ag NPs and QWs region. The LED with Ag NDs array structure is also found to exhibit reduced emission divergence, compared to that without Ag NDs.

Self-assembly SiO2 nanosphere monolayer template is utilized to fabricate nanopatterned sapphire substrates (NPSSs) with 0-nm, 50-nm, and 120-nm spacing, receptively. The GaN growth on top of NPSS with 0-nm spacing has the best crystal quality because of laterally epitaxial overgrowth. However, GaN growth from pattern top is more difficult to get smooth surface than from pattern bottom. The rougher surface may result in a higher work voltage. The stimulation results of finite-difference time-domain (FDTD) display that too large or too small spacing lead to the reduced light extracted efficiency (LEE) of LEDs. Under a driving current 350 mA, the external quantum efficiencies (EQE) of GaN-based LEDs grown on NPSSs with 0-nm, 50-nm, and 120-nm spacing increase by 43.3%, 50.6%, and 39.1%, respectively, compared to that on flat sapphire substrate (FSS). The optimized pattern spacing is 50 nm for the NPSS with 600-nm pattern period.

The InGaN multiple quantum well light-emitting diodes (LEDs) with different sizes of indium-tin-oxide (ITO) nanobowl photonic crystal (PhC) structure has been fabricated using self-assembled monolayer nanosphere lithography. The light output power (LOP) of PhC LEDs (at 350 mA) has been enhanced by 63.5% and the emission divergence exhibits a 28.8° reduction compared to conventional LEDs without PhC structure. Current-Voltage curves have shown that these PhC structures on ITO layer will not degrade the LED electrical properties. The finite-difference time-domain simulation (FDTD) has also been performed for light extraction and emission characteristics, which is consistent with the experimental results.

Crossover recombination is essential for accurate chromosome segregation during meiosis. The MutSγ complex, Msh4-Msh5, facilitates crossing over by binding and stabilizing nascent recombination intermediates. We show that these activities are governed by regulated proteolysis. MutSγ is initially inactive for crossing over due to an N-terminal degron on Msh4 that renders it unstable by directly targeting proteasomal degradation. Activation of MutSγ requires the Dbf4-dependent kinase Cdc7 (DDK), which directly phosphorylates and thereby neutralizes the Msh4 degron. Genetic requirements for Msh4 phosphorylation indicate that DDK targets MutSγ only after it has bound to nascent joint molecules (JMs) in the context of synapsing chromosomes. Overexpression studies confirm that the steady-state level of Msh4, not phosphorylation per se, is the critical determinant for crossing over. At the DNA level, Msh4 phosphorylation enables the formation and crossover-biased resolution of double-Holliday Junction intermediates. Our study establishes regulated protein degradation as a fundamental mechanism underlying meiotic crossing over.