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Hexagonal SiGe has been theoretically shown to feature a tunable direct bandgap in the range 0.4-0.8eV. We study arrays of site-selectively grown Si_(1-x)-Ge_x nanowires (NWs) grown using the crystal transfer method in which wurtzite GaP core NWs are used as template for SiGe growth. Our approach opens up routes towards photonic band-edge lasers using group-IV NWs. Low-temperature µPL studies of arrays of SiGe NW-arrays reveal strong emission at 0.395eV and linear power dependence for weak excitation levels (P_ex~0.01-1kW/cm^2). For P_ex>4kW/cm^2, a new peak emerges at 0.37eV with an intensity that increases according to ~(P_ex)^5, indicative of stimulated emission close to the photonic band-edge.

Semiconductors are essential for modern electronic and optoelectronic devices. To further advance the functionality of such devices, the ability to fabricate increasingly complex semiconductor nanostructures is of utmost importance. Nanowires offer excellent opportunities for new device concepts; heterostructures have been grown in either the radial or axial direction of the core nanowire but never along both directions at the same time. This is a consequence of the common use of a foreign metal seed particle with fixed size for nanowire heterostructure growth. In this work, we present for the first time a growth method to control heterostructure growth in both the axial and the radial directions simultaneously while maintaining an untapered self-seeded growth. This is demonstrated for the InAs/InAs1-xPx material system. We show how the dimensions and composition of such axio-radial nanowire heterostructures can be designed including the formation of a "pseudo-superlattice" consisting of five separate InAs1-xPx segments with varying length. The growth of axio-radial nanowire heterostructures offers an exciting platform for novel nanowire structures applicable for fundamental studies as well as nanowire devices. The growth concept for axio-radial nanowire heterostructures is expected to be fully compatible with Si substrates.

Epitaxial growth techniques enable nearly defect free heterostructures with coherent interfaces, which are of utmost importance for high performance electronic devices. While high-vacuum technology-based growth techniques are state-of-the art, here we pursue a purely solution processed approach to obtain nanocrystals with eptaxially coherent and quasi-lattice matched inorganic ligand shells. Octahedral metal-halide clusters, respectively 0-dimensional perovskites, were employed as ligands to match the coordination geometry of the PbS cubic rock-salt lattice. Different clusters (CH3NH3+)(6–x)[M(x+)Hal6](6–x)– (Mx+ = Pb(II), Bi(III), Mn(II), In(III), Hal = Cl, I) were attached to the nanocrystal surfaces via a scalable phase transfer procedure. The ligand attachment and coherence of the formed PbS/ligand core/shell interface was confirmed by combining the results from transmission electron microscopy, small-angle X-ray scattering, nuclear magnetic resonance spectroscopy and powder X-ray diffraction. The lat...

Lead–magnesium niobate lead titanate (PMN-PT) has been proven as an excellent material for sensing and actuating applications. The fabrication of advanced ultra-small PMN-PT-based devices relies on the availability of sophisticated procedures for the micro-machining of PMN-PT thin films or bulk substrates. Approaches reported up to date include chemical etching, excimer laser ablation, and ion milling. To ensure an excellent device performance, a key mandatory feature for a micro-machining process is to preserve as far as possible the crystalline quality of the substrates; in other words, the fabrication method must induce a low density of cracks and other kind of defects. In this work, we demonstrate a relatively fast procedure for the fabrication of high-quality PMN-PT micro-machined actuators employing green femtosecond laser pulses. The fabricated devices feature the absence of extended cracks and well-defined edges with relatively low roughness, which is advantageous for the further integration of nanomaterials onto the piezoelectric actuators.

We investigate the evolution of the cross-plane thermal conductivity κ of a SiGe superlattice (SL) as it is gradually converted into an alloy via post-growth thermal treatment at temperatures varying from 650 to 1000 °C. X-ray diffraction (XRD), transmission electron microscopy (TEM), secondary-ion-mass-spectroscopy (SIMS), and photoluminescence (PL) spectroscopy measurements are used as complementary tools to gain insight into the structural properties of our SL and their evolution upon annealing. While the SL structure is preserved up to temperatures of ∼850 °C, full alloying is observed for higher temperatures. The thermal conductivity data, collected with differential 3ω method, show a monotonic increase of κ from ∼4.5 W/m K up to the values expected for a thin-film alloy. To understand the results, we compute the phonon mean-free-path (MFP) spectra using the experimentally determined composition profiles as input. The calculated thermal conductivity values are in good agreement with the experimental data and show that the increase of thermal conductivity is due to a gradual increase of MFP of low-to-mid-frequency phonons, i.e., to a weakening of interface scattering for alloyed SLs. The calculations also allow us to address finite-thickness effects on the measured thermal conductivity data. Although the used SL had a total thickness of only ∼250 nm, its thermal conductivity can be assumed to coincide with that of a “bulk” (infinitely thick) SL prior to annealing. As interdiffusion increases, boundary scattering at the film/substrate interface becomes relevant and leads to a slow increase of κ. Besides its fundamental relevance, this work shows that the thermal stability of superlattices is limited, and that sizeable structural changes (including defect formation) occur already at operation temperatures of ∼650 °C.

Nature Photonics, 9, ISSN:1749-4885, ISSN:1749-4893

Semiconductors are essential for modern electronic and optoelectronic devices. To further advance the functionality of such devices, the ability to fabricate increasingly complex semiconductor nanostructures is of utmost importance. Nanowires offer excellent opportunities for new device concepts; heterostructures have been grown in either the radial or axial direction of the core nanowire but never along both directions at the same time. This is a consequence of the common use of a foreign metal seed particle with fixed size for nanowire heterostructure growth. In this work, we present for the first time a growth method to control heterostructure growth in both the axial and the radial directions simultaneously while maintaining an untapered self-seeded growth. This is demonstrated for the InAs/InAs

The evolution of real-time medical diagnostic tools such as angiography and computer tomography from radiography based on photographic plates was enabled by the development of integrated solid-state X-ray photon detectors, based on conventional solid-state semiconductors. Recently, for optoelectronic devices operating in the visible and near infrared spectral regions, solution-processed organic and inorganic semiconductors have also attracted immense attention. Here we demonstrate a possibility to use such inexpensive semiconductors for sensitive detection of X-ray photons by direct photon-to-current conversion. In particular, methylammonium lead iodide perovskite (CH3NH3PbI3) offers a compelling combination of fast photoresponse and a high absorption cross-section for X-rays, owing to the heavy Pb and I atoms. Solution processed photodiodes as well as photoconductors are presented, exhibiting high values of X-ray sensitivity (up to 25 µC mGyair-1 cm-3) and responsivity (1.9×104 carriers/photon), which are commensurate with those obtained by the current solid-state technology.

In this paper strain transfer efficiencies from single crystalline piezoelectric lead magnesium niobate-lead titanate (PMN-PT) substrate to a GaAs semiconductor membrane bonded on top are investigated using state-of-the-art x-ray diffraction (XRD) techniques and finite-element-method (FEM) simulations. Two different bonding techniques are studied, namely gold-thermo-compression and polymer-based SU8 bonding. Our results show a much higher strain-transfer for the "soft" SU8 bonding in comparison to the "hard" bonding via gold-thermo-compression. A comparison between the XRD results and FEM simulations allows to explain this unexpected result with the presence of complex interface structures between the different layers., Comment: 17 pages, 7 Figures, 1 Table

In this work the calibration of the directional Raman strain shift coefficient for tensile strained Ge microstructures is reported. The strain shift coefficient is retrieved from micro-Raman spectroscopy measurements in combination with absolute strain measurements from x-ray diffraction using focused synchrotron radiation. The results are used to fit the phonon deformation potentials. A linear dependence of the phonon deformation potentials p and q is revealed. The method can be extended to provide strain calibration of Raman experiments also in other material system., Measurement Science and Technology, 28 (2), ISSN:0957-0233, ISSN:1361-6501

Thermoelectric materials have great potential for a range of energy harvesting applications. The thermoelectric performance of Ge/SiGe heterostructures is presented with the aim of developing materials to be used as power sources for autonomous sensing applications. Seebeck coefficients up to 279.5 {plus minus} 1.2 µV/K with electrical conductivities of 77,200 S/m are demonstrated at room temperature with power factors of 6.02 {plus minus} 0.05 mW m-1K-2.

Successful formation of electronic interfaces between living cells and semiconductors hinges on being able to obtain an extremely close and high surface-area contact, which preserves both cell viability and semiconductor performance. To accomplish this, we introduce organic semiconductor assemblies consisting of a hierarchical arrangement of nanocrystals. These are synthesised via a colloidal chemical route that transforms the nontoxic commercial pigment quinacridone into various biomimetic three-dimensional arrangements of nanocrystals. Through a tuning of parameters such as precursor concentration, ligands and additives, we obtain complex size and shape control at room temperature. We elaborate hedgehog-shaped crystals comprising nanoscale needles or daggers that form intimate interfaces with the cell membrane, minimising the cleft with single cells without apparent detriment to viability. Excitation of such interfaces with light leads to effective cellular photostimulation. We find reversible light-induced conductance changes in ion-selective or temperature-gated channels., Nanomaterials that form a bioelectronic interface with cells are fascinating tools for controlling cellular behavior. Here, the authors photostimulate single cells with spiky assemblies of semiconducting quinacridone nanocrystals, whose nanoscale needles maximize electronic contact with the cells.

Ge-rich multiple quantum well heterostructures have been investigated as engineered material for efficient thermoelectric generators monolithically integrated on silicon substrates. Thick Ge/SiGe multilayers on Si substrates designed for lateral thermoelectric devices have been grown and characterized in which electrical and thermal conduction occur parallel to the heterostructure interfaces. In this study, an overview of the investigated structures is presented together with results from X-ray scattering and transmission electron microscopy experiments. These analyses confirm the high quality of the material and the uniformity of the structure over the whole deposited thickness. Important parameters in terms of the optimization of the material quality which could affect thermoelectric properties, such as the interfaces roughness and the threading dislocation density, have also been evaluated. Preliminary electrical and Seebeck coefficient measurements indicate the viability of this material for the realization of thermoelectric devices.

In this work, the nucleation and growth of InAs nanowires on patterned SiO2/Si(111) substrates is studied. It is found that the nanowire yield is strongly dependent on the size of the etched holes in the SiO2, where openings smaller than 180 nm lead to a substantial decrease in nucleation yield, while openings larger than ≈500nm promote nucleation of crystallites rather than nanowires. We propose that this is a result of indium particle formation prior to nanowire growth, where the size of the indium particles, under constant growth parameters, is strongly influenced by the size of the openings in the SiO2 film. Nanowires overgrowing the etched holes, eventually leading to a merging of neighboring nanowires, shed light into the growth mechanism., Highlights ► Position controlled self-seeded InAs nanowire growth on Si is studied. ► The influence of a SiO2 mask gives information on the growth mechanism. ► An optimum indium particle size range for nanowire nucleation exists. ► The In particle size depends on SiO2 layer opening size and process conditions.

Group III−V nanowires offer the exciting possibility of epitaxial growth on a wide variety of substrates, most importantly silicon. To ensure compatibility with Si technology, catalyst-free growth schemes are of particular relevance, to avoid impurities from the catalysts. While this type of growth is well-documented and some aspects are described, no detailed understanding of the nucleation and the growth mechanism has been developed. By combining a series of growth experiments using metal−organic vapor phase epitaxy, as well as detailed in situ surface imaging and spectroscopy, we gain deeper insight into nucleation and growth of self-seeded III−V nanowires. By this mechanism most work available in literature concerning this field can be described.

Recent investigations of core-shell nanowires using synchrotron radiation techniques deduced the average structural parameters of heterostructure core-shell nanowires. Here, we report on first results and discuss the problems arising when measuring such complex nanostructures by using nanofocusing X-ray techniques. InAs/IAsP core-shell nanowires exhibit a certain bending, the origin of which is described using finite element simulations assuming a displacement of the core, and a gradient in the chemical composition of the wire's shell. (C) 2009 Elsevier B.V. All rights reserved.

We report on the investigation of diffusion properties of SiGe/Ge multiple quantum well (MQW) structures with period of 24 nm grown strain symmetrized on relaxed SiGe buffers on Si (001) substrates by molecular beam epitaxy. During in situ annealing, X-ray diffraction experiments were performed on series of MQW structures with average Ge contents of about 70 and 90% using reciprocal space mapping around the (224) reciprocal lattice point. The reciprocal space maps were obtained at elevated temperatures at the ESRF for temperatures from about 600 to 800°C. The temperatures, where interdiffusion becomes observable, is in the range from 680 to 780°C for x Ge = 0.7 and from 650 to 720°C for x Ge = 0.9. The diffusion parameters were obtained from the analysis of the decay of the periodic satellites in the recorded intensity maps.

A submicron X-ray beam was employed to scan a 3.2 μm SiGe island in two directions. At each scanning position, 2D cuts of the reciprocal space close to the (004) Bragg reflection of the Si substrate were recorded with a CCD. From the position of the SiGe island induced diffuse scattering peak on each CCD frame, we detected and analyzed variations of the strain within a selected single island. Our method does not require the recording of the whole 3D reciprocal space at each position in real space, thus avoiding instability problems during data acquisition. We found changes in the strain which are consistent with finite element calculations of the strain within a model island. The knowledge of the strain distribution within SiGe epitax-ial structures is relevant for the correct interpretation of their electronic and optical properties.

The fabrication of core-shell structures is crucial for many nanowire device concepts. For the proper tailoring of their electronic properties, control of structural parameters such as shape, size, diameter of core and shell, their chemical composition, and information on their strain fields is mandatory. Using synchrotron X-ray diffraction studies and finite element simulations, we determined the chemical composition, dimensions, and strain distribution for series of InAs/InAsP core-shell wires grown on Si(111) with systematically varied growth parameters. In particular we detect initiation of plastic relaxation of these structures with increasing shell thickness and/or increasing phosphorus content. We establish a phase diagram, defining the region of parameters leading to pseudomorphic nanowire growth. This is important to avoid extended defects which are detrimental for their electronic properties.

Modern nanotechnology offers routes to create new artificial materials, widening the functionality of devices in physics, chemistry, and biology. Templated self-organization has been recognized as a possible route to achieve exact positioning of quantum dots to create quantum dot arrays, molecules, and crystals. Here we employ extreme ultraviolet interference lithography (EUV-IL) at a wavelength of lambda = 13.5 nm for fast, large-area exposure of templates with perfect periodicity. Si(001) substrates have been patterned with two-dimensional hole arrays using EUV-IL and reactive ion etching. On these substrates, three-dimensionally ordered SiGe quantum dot crystals with the so far smallest quantum dot sizes and periods both in lateral and vertical directions have been grown by molecular beam epitaxy. X-ray diffractometry from a sample volume corresponding to about 3.6 x 10(7) dots and atomic force microscopy (AFM) reveal an up to now unmatched structural perfection of the quantum dot crystal and a narrow quantum dot size distribution. Intense interband photoluminescence has been observed up to room temperature, indicating a low defect density in the three-dimensional (3D) SiGe quantum dot crystals. Using the Ge concentration and dot shapes determined by X-ray and AFM measurements as input parameters for 3D band structure calculations, an excellent quantitative agreement between measured and calculated PL energies is obtained. The calculations show that the band structure of the 3D ordered quantum dot crystal is significantly modified by the artificial periodicity. A calculation of the variation of the eigenenergies based on the statistical variation in the dot dimensions as determined experimentally (+/-10% in linear dimensions) shows that the calculated electronic coupling between neighboring dots is not destroyed due to the quantum dot size variations. Thus, not only from a structural point of view but also with respect to the band structure, the 3D ordered quantum dots can be regarded as artificial crystal.

Indium arsenide nanowires are grown directly on silicon substrates (see figure and cover) using a method employing self-assembled organic coatings to create oxide-based growth templates. High-performance materials, such as InAs, could have great impact on future nanoelectronics if integrated with Si, but integration has so far been hard to realize with other methods.

Core–shell nanowires (NW) have become very prominent systems for band engineered NW heterostructures that effectively suppress detrimental surface states and improve performance of related devices. This concept is particularly attractive for material systems with high intrinsic surface state densities, such as the low-bandgap In-containing group-III arsenides, however selection of inappropriate, lattice-mismatched shell materials have frequently caused undesired strain accumulation, defect formation, and modifications of the electronic band structure. Here, we demonstrate the realization of closely lattice-matched radial InGaAs–InAlAs core–shell NWs tunable over large compositional ranges [x(Ga)∼y(Al) = 0.2–0.65] via completely catalyst-free selective-area molecular beam epitaxy. On the basis of high-resolution X-ray reciprocal space maps the strain in the NW core is found to be insignificant (ε < 0.1%), which is further reflected by the absence of strain-induced spectral shifts in luminescence spectra and nearly unmodified band structure. Remarkably, the lattice-matched InAlAs shell strongly enhances the optical efficiency by up to 2 orders of magnitude, where the efficiency enhancement scales directly with increasing band offset as both Ga- and Al-contents increase. Ultimately, we fabricated vertical InGaAs−InAlAs NW/Si photovoltaic cells and show that the enhanced internal quantum efficiency is directly translated to an energy conversion efficiency that is ∼3–4 times larger as compared to an unpassivated cell. These results highlight the promising performance of lattice-matched III–V core–shell NW heterostructures with significant impact on future development of related nanophotonic and electronic devices.

We demonstrate metal organic vapour phase epitaxy growth of GaP/GaAs1-xPx/GaP double heterostructure nanowires on GaP(111)B, and report bright photoluminescence at room temperature. By using different PH3 to AsH3 flow ratios during growth of the GaAs1-xPx segment, we are able to control the composition of the segment, making it feasible to tune the wavelength of the emitted light. A photoluminescence system was employed to characterize the luminescence, and x-ray energy dispersive spectrometry and x-ray diffraction studies were used to investigate the composition of the segment. These double heterostructure nanowires could in the future be used in optoelectronic devices and as multi pie-wavelength fluorescent markers for biomedical applications.

The atomic distances in hexagonal polytypes of III-V compound semiconductors differ from the values expected from simply a change of the stacking sequence of (111) lattice planes. While these changes were difficult to quantify so far, we accurately determine the lattice parameters of zinc blende, wurtzite, and 4H polytypes for InAs and InSb nanowires, using X-ray diffraction and transmission electron microscopy. The results are compared to density functional theory calculations. Experiment and theory show that the occurrence of hexagonal bilayers tend to strech the distances of atomic layers parallel to the c-axis and to reduce the in-plane distances compared to those in zinc blende. The change of the lattice parameters scales linearly with the hexagonality of the polytype, defined as the fraction of bilayers with hexagonal character within one unit cell. Document Type: Article

We present the successful growth by molecular beam epitaxy of strain-compensated Si/Si 0.2 Ge 0.8 quantum cascade structures on Si 0.5 Ge 0.5 pseudo-substrates. Three different samples, containing 3, 15 and 30 repetitions of the active region have been investigated. The active region consists of 14 Si 0.2 Ge 0.8 wells separated by thin Si barriers of thickness in the range of 4– 26 A . The X-ray diffraction patterns of the different structures reveal the excellent reproducibility of the quantum well sequence within the sample and from growth run to growth run. Intersubband electroluminescence, due to a transition between heavy hole states, is observed for all three devices. The spectra exhibit a pronounced peak at about 175 meV close to the intended transition energy. Emission intensities, as well as the voltage applied for a given current density, scale with the number of repetitions.

Silicon, arguably the most important technological semiconductor, is predicted to exhibit a range of new and interesting properties when grown in the hexagonal crystal structure. To obtain pure hexagonal silicon is a great challenge because it naturally crystallizes in the cubic structure. Here, we demonstrate the fabrication of pure and stable hexagonal silicon evidenced by structural characterization. In our approach, we transfer the hexagonal crystal structure from a template hexagonal gallium phosphide nanowire to an epitaxially grown silicon shell, such that hexagonal silicon is formed. The typical ABABAB⋯ stacking of the hexagonal structure is shown by aberration-corrected imaging in transmission electron microscopy. In addition, X-ray diffraction measurements show the high crystalline purity of the material. We show that this material is stable up to 9 GPa pressure. With this development, we open the way for exploring its optical, electrical, superconducting, and mechanical properties.

This articleThis article will form part of a virtual special issue of the journal, presenting some highlights of the 12th Biennial Conference on High-Resolution X-ray Diffraction and Imaging (XTOP2014). reports the X-ray diffraction-based structural characterization of the α12 multilayer structure SiGe2Si2Ge2SiGe12 [d'Avezac, Luo, Chanier & Zunger (2012). Phys. Rev. Lett. 108, 027401], which is predicted to form a direct bandgap material. In particular, structural parameters of the superlattice such as thickness and composition as well as interface properties, are obtained. Moreover, it is found that Ge subsequently segregates into layers. These findings are used as input parameters for band structure calculations. It is shown that the direct bandgap properties depend very sensitively on deviations from the nominal structure, and only almost perfect structures can actually yield a direct bandgap. Photoluminescence emission possibly stemming from the superlattice structure is observed.

X-ray diffraction-based structural analysis results of possible direct bandgap Si/Ge superlattices composed of monolayer thin deposits are presented, together with theoretical predictions and first optical measurements., This article1 reports the X-ray diffraction-based structural characterization of the α12 multilayer structure SiGe2Si2Ge2SiGe12 [d’Avezac, Luo, Chanier & Zunger (2012 ▶). Phys. Rev. Lett. 108, 027401], which is predicted to form a direct bandgap material. In particular, structural parameters of the superlattice such as thickness and composition as well as interface properties, are obtained. Moreover, it is found that Ge subsequently segregates into layers. These findings are used as input parameters for band structure calculations. It is shown that the direct bandgap properties depend very sensitively on deviations from the nominal structure, and only almost perfect structures can actually yield a direct bandgap. Photoluminescence emission possibly stemming from the superlattice structure is observed.

Organic pigments such as indigos, quinacridones, and phthalocyanines are widely produced industrially as colorants for everyday products as various as cosmetics and printing inks. Herein we introduce a general procedure to transform commercially available insoluble microcrystalline pigment powders into colloidal solutions of variously sized and shaped semiconductor micro- and nanocrystals. The synthesis is based on the transformation of the pigments into soluble dyes by introducing transient protecting groups on the secondary amine moieties, followed by controlled deprotection in solution. Three deprotection methods are demonstrated: thermal cleavage, acid-catalyzed deprotection, and amine-induced deprotection. During these processes, ligands are introduced to afford colloidal stability and to provide dedicated surface functionality and for size and shape control. The resulting micro- and nanocrystals exhibit a wide range of optical absorption and photoluminescence over spectral regions from the visible to the near-infrared. Due to excellent colloidal solubility offered by the ligands, the achieved organic nanocrystals are suitable for solution processing of (opto)electronic devices. As examples, phthalocyanine nanowire transistors as well as quinacridone nanocrystal photodetectors, with photoresponsivity values by far outperforming those of vacuum deposited reference samples, are demonstrated. The high responsivity is enabled by photoinduced charge transfer between the nanocrystals and the directly attached electron-accepting vitamin B2 ligands. The semiconducting nanocrystals described here offer a cheap, nontoxic, and environmentally friendly alternative to inorganic nanocrystals as well as a new paradigm for obtaining organic semiconductor materials from commercial colorants.

Nanoparticles exhibiting localized surface plasmon resonances (LSPR) are valuable tools traditionally used in a wide field of applications including sensing, imaging, biodiagnostics and medical therapy. Plasmonics in semiconductor nanocrystals is of special interest because of the tunability of the carrier densities in semiconductors, and the possibility to couple the plasmonic resonances to quantum confined excitonic transitions. Here, colloidal Cu2–xSe nanocrystals were synthesized, whose composition was shown by Rutherford backscattering analysis and electron dispersive X-ray spectroscopy, to exhibit Cu deficiency. The latter results in p-type doping causing LSPRs, in the present case around a wavelength of 1100 nm, closely matching the indirect band gap of Cu2–xSe. By partial exchange of the organic ligands to specific electron trapping or donating species the LSPR is fine-tuned to exhibit blue or red shifts, in total up to 200 nm. This tuning not only provides a convenient tool for post synthetic adjustments of LSPRs to specific target wavelength but the sensitive dependence of the resonance wavelength on surface charges makes these nanocrystals also interesting for sensing applications, to detect analytes dressed by functional groups.

A particularly difficult challenge in the chemistry of nanomaterials is the detailed structural and chemical analysis of multicomponent nano-objects. This is especially true for the determination of spatially resolved information. In this study, we demonstrate that dynamic nuclear polarization surface-enhanced solid-state NMR spectroscopy (DNP-SENS), which provides selective and enhanced NMR signal collection from the (near) surface regions of a sample, can be used to resolve the core–shell structure of a nanoparticle. Li-ion anode materials, monodisperse 10–20 nm large tin nanoparticles covered with a ∼3 nm thick layer of native oxides, were used in this case study. DNP-SENS selectively enhanced the weak 119Sn NMR signal of the amorphous surface SnO2 layer. Mössbauer and X-ray absorption spectroscopies identified a subsurface SnO phase and quantified the atomic fractions of both oxides. Finally, temperature-dependent X-ray diffraction measurements were used to probe the metallic β-Sn core and indicated that even after 8 months of storage at 255 K there are no signs of conversion of the metallic β-Sn core into a brittle semiconducting α-phase, a phase transition which normally occurs in bulk tin at 286 K (13 °C). Taken together, these results indicate that Sn/SnOx nanoparticles have core/shell1/shell2 structure of Sn/SnO/SnO2 phases. The study suggests that DNP-SENS experiments can be carried on many types of uniform colloidal nanomaterials containing NMR-active nuclei, in the presence of either hydrophilic (ion-capped surfaces) or hydrophobic (capping ligands with long hydrocarbon chains) surface functionalities., ACS Nano, 8 (3), ISSN:1936-0851, ISSN:1936-086X

Journal of Synchrotron Radiation, 21 (1), ISSN:0909-0495, ISSN:1600-5775

Letter to the Editor.-- et al., The authors acknowledge the present financial support of TNA by the EC via BIOSTRUCT-X and CALIPSO.

Commercially available light-emitting diodes (LEDs) suffer from low-efficiency in the green region of the visible spectrum. In order to solve this issue III-V materials such as Gallium phosphide (GaP) can be investigated. GaP in the zinc blende (ZB) crystal structure has an indirect band gap, limiting the efficiency of the green emission. However, when the material is grown with wurtzite (WZ) crystal phase a direct band gap is predicted. Here, we show the fabrication and the characterization of wurtzite GaP nanowires, together with the demonstration of the direct band gap. The strong photoluminescence signal observed at 594 nm with a lifetime in the order of 1ns matches with the expectation for a direct band gap material. Furthermore, the emission wavelength can be tuned across a wide range of the visible spectrum (555−690 nm) by incorporating aluminum or arsenic in the WZ GaP nanowires.

We have studied the structural properties of single and multiple layers of self-organised Ge islands grown on Si. The X-ray reflection curves of the single layers indicate the transition from 2D to 3D growth for Ge layer thicknesses of 5.33–5.67 ML, in excellent agreement with photoluminescence observations. Because of the strain fields extending into the surrounding Si barrier, the dots of multiple layers are strongly correlated in the vertical direction. A recent theoretical model also predicts an increasing lateral correlation of the dots with increasing numbers of dot layers. In reciprocal space maps we not only observed such a kind of lateral ordering, but also indications for an anisotropy of the inter-dot spacing in the [100] and [110] directions.

With the continued maturation of III–V nanowire research, expectations of material quality should be concomitantly raised. Ideally, III–V nanowires integrated on silicon should be entirely free of extended planar defects such as twins, stacking faults, or polytypism, position-controlled for convenient device processing, and gold-free for compatibility with standard complementary metal–oxide–semiconductor (CMOS) processing tools. Here we demonstrate large area vertical GaAsxSb1–x nanowire arrays grown on silicon (111) by molecular beam epitaxy. The nanowires’ complex faceting, pure zinc blende crystal structure, and composition are mapped using characterization techniques both at the nanoscale and in large-area ensembles. We prove unambiguously that these gold-free nanowires are entirely twin-free down to the first bilayer and reveal their three-dimensional composition evolution, paving the way for novel infrared devices integrated directly on the cost-effective Si platform.