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The SiLK resins, composed of aromatic hydrocarbons, are a family of highly cross-linked thermoset polymers with isotropic dielectric properties. Patterning of SiLK for high aspect ratio copper interconnects has depended on reactive ion etching with oxygen/nitrogen gas mixtures. Reactive ion etching is therefore also accomplished with reducing plasmas such as nitrogen/hydrogen. An additional plasma cleaning step can be inserted after the reactive ion etching (RIE) step, so that any residual contamination is removed prior to imaging or final sputter coating. Automated sample preparation of microelectronic materials containing high and low-k dielectrics for FESEM is accomplished in this article by combining these techniques: plasma cleaning, ion beam etching, and reactive ion etching. A single RIE chemistry was effective in etching both dielectrics as well as delineating the other phases present.

Since its introduction as a complement to the Focused Ion Beam (FIB) in 2004, an increasing number of applications have been developed for use of a concentrated Ar ion beam with a diameter on the order of 1 μm. [1 – 11] The material systems that have benefited from such a technique have included metallics, nonmetallics and ceramics. The material properties studied have ranged from those of the bulk to those which vary on the atomic scale. Knowledge of single, multiple and layered phase chemistries has been enhanced. The identification of interphase interfaces in highly ordered crystalline materials has also been aided. Following final FIB milling with 2 5keV Ga ions, thin (0.5 – 2 nm) damaged surface layers are detected during subsequent electron microscopy. [12] These layers contain amorphous material and implanted Ga ions, with the distribution dependent upon the particular specimen and preparation protocol. Unless the damaged layer thickness can be reduced or eliminated, artifacts will occur during imaging and analysis in the transmission electron microscope (TEM). The effect is more severe if the specimen is viewed at the higher resolution possible with aberration correction. A survey of the significant improvements gained in image quality and analytical results will be presented. A majority of these results were obtained using a subset of the possible operating conditions: Ion Beam Diameter = 1 – 4 μm, Ion Beam Energy = 100 – 1000 eV, Incident Angles = ±10 . The specimen was maintained at a temperature between 25 and -175C depending on the application.

Extended abstract of a paper presented at Microscopy and Microanalysis 2011 in Nashville, Tennessee, USA, August 7–August 11, 2011.

Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009

Extended abstract of a paper presented at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, August 1–5, 2004.

Plasma cleaning is a useful technique to clean transmission electron microscopy (TEM) sample surfaces from carbon hydroxide. However, selective material removal rates can be hard to establish. As a result, carbonaceous samples are significantly impacted by the plasma process since by the very nature of an oxygen plasma it chemically reacts with carbon structures. We propose the use of a shield, provided by Fischione Instruments, to see whether this reduces significantly the plasma cleaning speed without reducing its effectiveness and without the need for a delicate tuning of the gas mixture or instrumentation parameters. Plasma cleaning could then be applied to carbonaceous samples such as graphite, diamond, amorphous carbon films as well as to any sort of powder deposited on holey carbon films. Tests were performed by electron energy-loss spectroscopy (EELS) using a post-column GIF attached to a Philips CM 30-UT and by high resolution imaging (HREM) with a top-entry JEOL 4000 EX.