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Mixed-dimensional composite structures using 0D quantum dots (QDs) and 2D transition metal dichalcogenides (TMDs) materials are expected to attract great interest in optoelectronics due to potential to generate new optical properties. Here, we report on the unique optical characteristics of a devices with a mixed dimensional vertically stacked structures based on WSe2/CdSeS QDs monolayer/MoS2 (2D/0D/2D). Specifically, it exhibits an ambipolar photoresponse characteristic, with a negative photoresponse observed in the 400–600 nm wavelength range and a positive photoresponse appearing at 700 nm wavelength. It resulted the high negative responsivity of up to 52.22 mA/W under 400 nm, which is 163 times higher than that of the photodetector without CdSeS QDs. We also demonstrate the negative photoresponse which could be due to increased carrier collision probability and non-radiative recombination. Device modeling and simulation reveal that Auger recombination among the types of non-radiative recombination is the main cause of negative photocurrent generation. Consequently, we have discovered ambipolar photoresponse near a specific wavelength corresponding to the energy of quantum dots. Our study reveals interesting phenomenon in the mixed low-dimensional stacked structure and paves the way to exploit it for the development of innovative photodetection materials as well as for optoelectronic applications.

We demonstrated the sensing properties and adsorption mechanism of NO2 molecules of monolayer graphene and multilayer graphene encapsulated ZnO QDs for NO2 gas adsorption. The gas response value of ZnO-multilayer graphene (ZMLG) QDs was approximately 23 % and 7.2 and 25.5 times higher than that with ZnO-monolayer graphene (ZG) and ZnO QDs, respectively. The surface potential change of ZMLG QDs increased up to 14.25 times compared to ZnO QDs and 6.33 times increased compared to ZG QDs. We proposed an accurate adsorption mechanism for the improvement of the detection behavior that is occured by covering the graphene shells into ZnO QDs by the Brunauer–Emmett–Teller (BET), X-ray photoelectron spectroscopy (XPS), and SKPM measurement. These results are expected to increase the accuracy of gas sensor characteristic analysis.

We demonstrated the thermally robust reduced graphene oxide (rGO)/boron nitride nanotube (BNNT) papers and their application in electromagnetic interference shielding. In order to overcome the thermal durability shortcomings of electromagnetic wave shielding paper based on rGO nanomaterial, rGO/BNNT electromagnetic interference (EMI) shielding paper having excellent thermal durability could be manufactured using BNNT nanomaterials having excellent chemical and thermal stability at high temperature. With the addition of a little BNNT, the durability against temperature can be increased by more than two times while there is little reduction in EMI performance.

Recently, research on the use of additives in photoactive layers to improve the efficiency of solar cells has continued to be conducted. Among them, carbon-based additives serve to increase a device's efficiency by simply and effectively improving the carrier movement. In this work, inverted polymer solar cells (iPSCs) are fabricated based on a blend of PTB7-Th:PC71BM and PTB7:PC71BM bulk heterojunction as photoactive materials using mixed additives of 4Cl-carbon-based contorted hexabenzocoronene (4Cl-cHBC). The 4Cl-cHBC additives, a kind of contorted polycyclic aromatic hydrocarbon, added to bulk heterojunction in the iPSC devices, provide a cocrystal modifier and effective charge separation to enhance device performance. The reason for this efficiency improvement is that cocrystal is formed due to a combination between 4Cl-cHBC and the PTB7-Th:PC71BM bulk heterojunction, which reduces bimolecular recombination in the device and significantly increases short-circuit current and fill factor. The RS and RSh values of iPSCs based on PTB7-Th:PC71BM with and without the 4Cl-cHBC additives decreased from 7.0 Ω cm2 to 4.0 Ω cm2, and increased from 813 Ω cm2 to 1226 Ω cm2, respectively. The calculated average carrier lifetimes at 500 nm for PTB7-Th:PC71BM and PTB7-Th:PC71BM with 4Cl-cHBC additives are 4.46 ps and 3.06 ps, respectively. The carrier lifetimes show that the charge separation of PTB7-Th:PC71BM with 4Cl-cHBC additives is more than 45% faster. As a result, the iPSCs based on the blend of PTB7-Th:PC71BM and PTB7:PC71BM with 4Cl-cHBC additives showed maximum power conversion efficiencies of 9.46 and 8.62%, which were 20.6 and 19.95% higher than those of the reference, respectively.

Group III-nitride light-emitting diodes (LEDs) fabricated on sapphire substrates typically suffer from insufficient heat dissipation, largely due to the low thermal conductivities (TCs) of their epitaxial layers and substrates. In the current work, we significantly improved the heat-dissipation characteristics of an InGaN/GaN quantum-well (QW) green LED by using hexagonal boron nitride (hBN) as a heat-transfer medium. Multiple-layer hBN with an average thickness of 11 nm was attached to the back of an InGaN/GaN-QW LED (hBN-LED). As a reference, an LED without the hBN (Ref-LED) was also prepared. After injecting current, heat-transfer characteristics inside each LED were analyzed by measuring temperature distribution throughout the LED as a function of time. For both LED chips, the maximum temperature was measured on the edge n-type electrode brightly shining fabricated on an n-type GaN cladding layer and the minimum temperature was measured at the relatively dark-contrast top surface between the p-type electrodes. The hBN-LED took 6 s to reach its maximum temperature (136.1 °C), whereas the Ref-LED took considerably longer, specifically 11 s. After being switched off, the hBN-LED took 35 s to cool down to 37.5 °C and the Ref-LED took much longer, specifically 265 s. These results confirmed the considerable contribution of the attached hBN to the transfer and dissipation of heat in the LED. The spatial heat-transfer and distribution characteristics along the vertical direction of each LED were theoretically analyzed by carrying out simulations based on the TCs, thicknesses, and thermal resistances of the materials used in the chips. The results of these simulations agreed well with the experimental results.

Two-dimensional (2D) van der Waals (vdW) heterostructures exhibit novel physical and chemical properties, allowing the development of unprecedented electronic, optical, and electrochemical devices. However, the construction of wafer-scale vdW heterostructures for practical applications is still limited due to the lack of well-established growth and transfer techniques. Herein, we report a method for the fabrication of wafer-scale 2D vdW heterostructures with an ultraclean interface between layers via the aid of a freestanding viscoelastic polymer support layer (VEPSL). The low glass transition temperature ( Tg) and viscoelastic nature of the VEPSL ensure absolute conformal contact between 2D layers, enabling the easy pick-up of layers and attaching to other 2D layers. This eventually leads to the construction of random sequence 2D vdW heterostructures such as molybdenum disulfide/tungsten disulfide/molybdenum diselenide/tungsten diselenide/hexagonal boron nitride. Furthermore, the VEPSL allows the conformal transfer of 2D vdW heterostructures onto arbitrary substrates, irrespective of surface roughness. To demonstrate the significance of the ultraclean interface, the fabricated molybdenum disulfide/graphene heterostructure employed as an electrocatalyst yielded excellent results of 73.1 mV·dec-1 for the Tafel slope and 0.12 kΩ of charge transfer resistance, which are almost twice as low as that of the impurity-trapped heterostructure.

Ion-exchange chromatography can be used to effectively replace the lithium ion of LiMo3Se3 with a proton. The enlargement of the Stern layer distance caused by this ion exchange improves the dispersibility of (Mo3Se3−)∞ chains and also prevents the re-bundling and aggregation of nanowires in aqueous solutions, even at high concentrations (1 mg mL−1).

The characteristics of a flexible write-once-read-many-times (WORM) memory fabricated with monolayered 0-dimensional (0D) CdSe–ZnS quantum dots (QDs) layers sandwiched between two insulating 2-dimensional (2D) hexagonal boron nitride (hBN) multilayers were investigated by electrical measurement method. The hBN/QDs monolayer/hBN structure was fabricated in a vertical stacked structure using a technique which control the formation of the QDs monolayer. QDs monolayer was formed by electrostatic interaction between the negative charge group on the CdSe–ZnS QDs surface and the positive charge group on the hBN surface. The device has a WORM characteristic due to the presence of QDs in the current-voltage (I–V) measurement. When a bias is applied, carriers were initially trapped by tunneling due to the QDs and then a conductive filament was formed in the hBN, which were not detrapped and exhibit characteristics of write-once-read-many-times memory. The maximum ON/OFF ratio of the current for the devices was as large as 4 × 10, and the endurance was 5 × 104 cycles, and a retention time was larger than 1 × 105 s. In order to explain the carrier transport mechanism and conductive filament of the WORM memory device caused by QDs, it through various methods such as I–V fitting data, simulation, and conductive AFM. Unlike the conventional conductive filament mechanism, through random diffusion such as Ag filament, the Au/hBN/QD/hBN/ITO/PET structures implemented a consistent conductive filament using Au metal and QDs active layer.

We report a facile method for the synthesis of large-area tungsten disulfide (WS2) films by means of chemical vapor deposition (CVD). To promote WS2 film growth, the precursor solution, which includes pre-reduced tungsten suboxides, is prepared by using hydrazine as the strong reducing agent and spin-coated onto the growth substrate. Growth is then carried out in a CVD chamber vaporized with dimethyl disulfide as the sulfur precursor. Although only WS2 flakes are grown with unreduced tungsten precursors under a hydrogen atmosphere, WS2 films are readily attained on pre-reduced tungsten suboxide substrates without the need for further reduction by hydrogen, which is noted to induce discontinuity of the grown film. The result presents the coverage of WS2 to be proportional to the amount of reduced tungsten suboxides, which is revealed by X-ray photoelectron spectroscopy. Furthermore, it is found that the multilayer WS2 flakes grow along the grain boundary, which allows the analysis of the grain size of WS2 ...

We report on the synthesis of large-area molybdenum disulfide (MoS2) film on an insulating substrate by means of chemical vapor deposition. A single mixture of molybdenum hexacarbonyl (Mo(CO)6) and dimethyl disulfide (C2H6S2) was utilized as an organic liquid precursor for the synthesis of MoS2 film. Carbon impurities stemming from the dissociation of the organic precursor are effectively removed by water oxidation, and hydrogen gas, which is a by-product of the oxidation of carbon impurities, inhibits the formation of molybdenum oxides. The use of a liquid precursor assisted with water oxidation ensures high reproducibility and full-coverage of MoS2 film for large area, which is not typically achieved with solid precursors such as molybdenum oxide and sulfur powder. We believe that our approach will advance the synthesis of transition metal dichalcogenides.

Ion-exchange chromatography can be used to effectively replace the lithium ion of LiMo3Se3 with a proton. The enlargement of the Stern layer distance caused by this ion exchange improves the dispersibility of (Mo3Se3-)∞ chains and also prevents the re-bundling and aggregation of nanowires in aqueous solutions, even at high concentrations (1 mg mL-1).

Wafer-scale hBN crystalline films Although wafer-scale polycrystalline films of insulating hexagonal boron nitride (hBN) can be grown, the grain boundaries can cause both scattering or pinning of charge carriers in adjacent conducting layers that impair device performance. Lee et al. grew wafer-scale single-crystal films of hBN by feeding the precursors into molten gold films on tungsten substrates. The low solubility of boron and nitrogen in gold caused micrometer-scale grains of hBN to form that coalesced into single crystals. These films in turn supported the growth of epitaxial wafer-scale films of graphene and tungsten disulfide. Science , this issue p. 817

We report a facile method for fabricating a flexible plane heater on a plastic substrate using a graphite and carbon nanotube hybrid nanocomposite. To scale up to an industrial level, all the processes are applied in a conventional manner including three-roll calendar and screen printing. Bare graphite flakes are used as a main filler to increase the electrical conductivity of the nanocomposite. To preserve the high crystallinity of graphite, chemical treatments are excluded during the process. A small amount of amino-functionalized multi-walled carbon nanotubes (a-MWCNTs) (10 wt%) are added not only to increase the mechanical strength of the plane heater, but also to improve the heat conduction in the nanocomposite. Therefore, while graphite nanocomposite film mostly peeled off after an adhesion test, a-MWCNT-graphite nanocomposite film adhered on the PET substrate without noticeable change. Furthermore, the fabricated plane heater shows the high performance, compared to that of a graphite nanocomposite, a carbon black/graphite nanocomposite, and Cu wire heaters. We demonstrate that our plane heater is applicable for heating seats of commercial vehicles as well as a flexible plane heater. It will be applied to numerous areas such as heating systems in electrical vehicle and household items for heating.

We report the synthesis of centimeter-scale monolayer WS2 on gold foil by chemical vapor deposition. The limited tungsten and sulfur solubility in gold foil allows monolayer WS2 film growth on gold surface. To ensure the coverage uniformity of monolayer WS2 film, the tungsten source-coated substrate was placed in parallel with Au foil under hydrogen sulfide atmosphere. The high growth temperature near 935 °C helps to increase a domain size up to 420 μm. Gold foil is reused for the repeatable growth after bubbling transfer. The WS2-based field effect transistor reveals an electron mobility of 20 cm(2) V(-1) s(-1) with high on-off ratio of ∼10(8) at room temperature, which is the highest reported value from previous reports of CVD-grown WS2 samples. The on-off ratio of integrated multiple FETs on the large area WS2 film on SiO2 (300 nm)/Si substrate shows within the same order, implying reasonable uniformity of WS2 FET device characteristics over a large area of 3 × 1.5 cm(2).

Although hexagonal boron nitride (h-BN) is a good candidate for gate-insulating materials by minimizing interaction from substrate, further applications to electronic devices with available two-dimensional semiconductors continue to be limited by flake size. While monolayer h-BN has been synthesized on Pt and Cu foil using chemical vapour deposition (CVD), multilayer h-BN is still absent. Here we use Fe foil and synthesize large-area multilayer h-BN film by CVD with a borazine precursor. These films reveal strong cathodoluminescence and high mechanical strength (Young’s modulus: 1.16±0.1 TPa), reminiscent of formation of high-quality h-BN. The CVD-grown graphene on multilayer h-BN film yields a high carrier mobility of ~24,000 cm[superscript 2] V[superscript −1] s[superscript −1] at room temperature, higher than that (~13,000 [superscript 2] V[superscript −1] s[superscript −1]) with exfoliated h-BN. By placing additional h-BN on a SiO[subscript 2]/Si substrate for a MoS[subscript 2] (WSe[subscript 2]) field-effect transistor, the doping effect from gate oxide is minimized and furthermore the mobility is improved by four (150) times., Korea Institute of Science and Technology. Institutional Program, National Science Foundation (U.S.) (STC Center for Integrated Quantum Materials Grant DMR-1231319), Massachusetts Institute of Technology. Institute for Soldier Nanotechnologies

High-quality and large-area molybdenum disulfide (MoS2) thin film is highly desirable for applications in large-area electronics. However, there remains a challenge in attaining MoS2 film of reasonable crystallinity due to the absence of appropriate choice and control of precursors, as well as choice of suitable growth substrates. Herein, a novel and facile route is reported for synthesizing few-layered MoS2 film with new precursors via chemical vapor deposition. Prior to growth, an aqueous solution of sodium molybdate as the molybdenum precursor is spun onto the growth substrate and dimethyl disulfide as the liquid sulfur precursor is supplied with a bubbling system during growth. To supplement the limiting effect of Mo (sodium molybdate), a supplementary Mo is supplied by dissolving molybdenum hexacarbonyl (Mo(CO)6) in the liquid sulfur precursor delivered by the bubbler. By precisely controlling the amounts of precursors and hydrogen flow, full coverage of MoS2 film is readily achievable in 20 min. Large-area MoS2 field effect transistors (FETs) fabricated with a conventional photolithography have a carrier mobility as high as 18.9 cm2 V−1 s−1, which is the highest reported for bottom-gated MoS2-FETs fabricated via photolithography with an on/off ratio of ≈105 at room temperature.

Large-area two-dimensional (2D) materials grown by chemical vapor deposition need to be transferred onto a target substrate for real applications. Poly(methyl methacrylate) as a supporting layer is widely used during the transfer process and removed after finishing it. However, it is a challenge to diminish the polymer layer completely. It is necessary to readily characterize the polymer residues on 2D materials to facilitate the removal process. Here, we report a method that characterizes the polymer residues on 2D materials by tracking the presence of G-band of amorphous carbons (a-Cs) in the Raman spectrum after forming carbonized a-Cs through thermal annealing. The (13)C-graphene is employed to separate the Raman signal G-band between (12)C-a-Cs and (13)C-graphene in the Raman spectrum. The residence of the polymer residues is clearly confirmed by the different Raman signals of two different isotopes ((12)C and (13)C) due to differences in mass. Our effective method recognizes that while the polymer residue is not easily removed on graphene, those on hexagonal boron nitride and molybdenum disulfide are almost diminished under optimum thermal annealing conditions. Our method will not only contribute to the development of a new transfer process, but also help to achieve a clean surface of 2D materials.