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Wafer-Scale van der Waals Heterostructures with Ultraclean Interfaces via the Aid of Viscoelastic Polymer

Authors :
Stephen Boandoh
Young-Min Kim
Jihoon Park
Soo Min Kim
Seok Joon Yun
Gyeongtak Han
Frederick Osei-Tutu Agyapong-Fordjour
Young Hee Lee
Hayoung Ko
Woochul Yang
Joo Song Lee
Ki Kang Kim
Sehwan Park
Soo Ho Choi
Source :
ACS Applied Materials & Interfaces. 11:1579-1586
Publication Year :
2018
Publisher :
American Chemical Society (ACS), 2018.

Abstract

Two-dimensional (2D) van der Waals (vdW) heterostructures exhibit novel physical and chemical properties, allowing the development of unprecedented electronic, optical, and electrochemical devices. However, the construction of wafer-scale vdW heterostructures for practical applications is still limited due to the lack of well-established growth and transfer techniques. Herein, we report a method for the fabrication of wafer-scale 2D vdW heterostructures with an ultraclean interface between layers via the aid of a freestanding viscoelastic polymer support layer (VEPSL). The low glass transition temperature ( Tg) and viscoelastic nature of the VEPSL ensure absolute conformal contact between 2D layers, enabling the easy pick-up of layers and attaching to other 2D layers. This eventually leads to the construction of random sequence 2D vdW heterostructures such as molybdenum disulfide/tungsten disulfide/molybdenum diselenide/tungsten diselenide/hexagonal boron nitride. Furthermore, the VEPSL allows the conformal transfer of 2D vdW heterostructures onto arbitrary substrates, irrespective of surface roughness. To demonstrate the significance of the ultraclean interface, the fabricated molybdenum disulfide/graphene heterostructure employed as an electrocatalyst yielded excellent results of 73.1 mV·dec-1 for the Tafel slope and 0.12 kΩ of charge transfer resistance, which are almost twice as low as that of the impurity-trapped heterostructure.

Details

ISSN :
19448252 and 19448244
Volume :
11
Database :
OpenAIRE
Journal :
ACS Applied Materials & Interfaces
Accession number :
edsair.doi.dedup.....d56c370570aa304d4fe17e4700f64b66
Full Text :
https://doi.org/10.1021/acsami.8b16261