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This article explores the synthesis and characterization of ZrO2 nanoparticles for gas sensing purposes. The researchers utilized a co-precipitation technique to create the nanoparticles and examined their structural, particle size, UV-visible, and gas sensing properties. The findings indicate that the crystal structure and size of the nanoparticles vary depending on the sintering temperature. The nanoparticles demonstrated sensitivity to acetone and methanol, with a greater sensitivity to acetone. The study emphasizes the potential of ZrO2 nanoparticles for gas sensing applications and their distinct properties compared to bulk ZrO2. Further research is recommended to investigate the sensing capabilities of ZrO2 nanoparticles for industrial gases. [Extracted from the article]

In this communication, we report the results of studies on the effect of Ba and Ti co-doping on the structural, electrical, transport and magnetic properties of nanostructured LaFeO3 films grown on conducting LaNiO3 (LNO) buffer layer deposited on LaAlO3 (LAO) substrate. The structural property investigations on (La1-xBax)(Fe1-xTix)O3 (LBFT); x = 0.0–0.5 films, carried out using X-ray diffraction measurements, revealed the single phasic behaviour of all the films with the compressive strain varying with the doping. Surface morphology studied using atomic force microscopy, show the presence of fine granular surface roughness < 1 nm while the interface grain morphology study using cross-sectional SEM study, reveal the grain mixing of LNO and LBFT layers at the interface region. Modifications in the dielectric behaviour of LBFT/LNO heterostructure with Ba and Ti co-doping have been discussed in light of the hopping of charge carriers and interface mixing at LBFT/LNO layers. Observation of partially saturated ferroelectric loop in films doped with higher concentrations of Ba and Ti, may be attributed to the formation of non-centrosymmetric structure. In addition, the magnetization measurements on the Ba and Ti co-doped LBFT films depict the doping concentration dependent magnetic behaviour. [ABSTRACT FROM AUTHOR]

Strain-induced modifications in the structure, electronic structure, electrical, and ferroelectric properties of the Bi0.90Ca0.10FeO3 (BCFO)/Nb-doped SrTiO3 (100) films have been systematically studied in light of variation in film thickness. X-ray diffraction and ɸ-scan measurements confirm the single phase, (100) oriented epitaxial growth of all films. Room temperature absorption spectra show the presence of asymmetric broad peak around ∼2.5 eV, which is indicative of the presence of defect states inside the bandgap and is attributed to the oxygen vacancies. Improvement in the bipolar resistive switching behavior with a decrement in oxygen vacancies and improvement in ferroelectric properties with increasing film thickness suggest the crucial role of oxygen vacancies and strain in modifying the electrical properties of the BCFO films. Improvement in the ferroelectric behavior is attributed to the increment in the Fe 3d-O 2p hybridization, localization of Fe 3deg/Bi 6s-O 2p orbitals, and reduction in the oxygen vacancies with an increase in the film thickness. Observed stable retention and large ON/OFF switching ratio in BCFO films make them a promising candidate for application in the non-volatile memory device. [ABSTRACT FROM AUTHOR]

To understand the multiferroic behavior of the Y and Mn co-doped Bi0.9La0.1FeO3 system, we have synthesized Bi0.9La0.1FeO3 with the co-doped composition of Bi(0.9−a)YaLa0.1Fe (1−b)MnbO3 (a = 0.05, b = 0.05, 0.10, 0.15, 0.20, and a = 0.10, b = 0.10) using the solid-state reaction method. The role of Y and Mn co-doping on the structural, magnetic, ferroelectric, and dielectric properties were studied by various characterization techniques, such as x-ray diffraction, vibrating sample magnetometer (VSM), polarization–electric field (P–E) loop tracer, and dielectric measurements. X-ray diffraction studies show that a 5% doped sample is single phasic nature and crystallizes in rhombohedral (R3c) symmetry, whereas higher doped samples are dual-phase in nature with minor impurity Bi2Fe4O9 and crystallize in rhombohedral (R3c) and cubic (Pm-3 m) modulation in structural parameters with Y and Mn doping. The modulation in magnetic behavior with Y and Mn doping has been investigated and studied in the context of modification in the different interactions. P–E loop behavior is observed for lower Y (5%) and Mn (5, 10, 15%) doped samples, whereas a lossy/leaky loop is found for higher doped samples (Y-5, 10%, and Mn-20%). Lastly, the real and imaginary parts of dielectric permittivity indicate doping-induced increases in the values of ε′ and ε″. [ABSTRACT FROM AUTHOR]

BiFeO3 thin films were deposited onto single crystalline Si (100) substrate using Pulsed Laser Deposition technique. The effect of different oxygen partial pressure on the BiFeO3 film growth, structural and transport properties has been investigated. Structural characterization shows that film growth under lower partial pressure exhibits a minor impurity phase which gets suppressed under higher oxygen partial pressure (OP2). The effect of OP2 during the deposition on the leakage current and the role of oxygen vacancies have been understood in the context of various charge transport mechanism. RBS study confirms the presence of oxygen content in the film studied which are responsible for the modification in the Electrical behavior of BFO/Si thin film devices. [ABSTRACT FROM AUTHOR]

We present the results of studies on the dielectric properties of polycrystalline Bi1-xCaxFeO3(x = 0.05, 0.10, 0.20) (BCFO) multiferroics. Rietveld refined XRD patterns confirm the single phasic nature of 5% & 10% Ca – doped samples crystallizing in superimposed R3c (Rhombohedral) + Pm 3m (Cubic) space group symmetry while 20% Ca – doped sample crystallize in Pm 3m symmetry. Frequency and temperature dependent dielectric constant (ϵ) studies show the contribution of grain and grain boundaries in the system. Complex impedance graph exhibits a single semicircular arc for all the samples, indicating the contribution of grain interior (bulk) property of the material. [ABSTRACT FROM AUTHOR]