Effect of growth condition on the electrical behavior of BiFeO3/Si thin film devices.

BiFeO3 thin films were deposited onto single crystalline Si (100) substrate using Pulsed Laser Deposition technique. The effect of different oxygen partial pressure on the BiFeO3 film growth, structural and transport properties has been investigated. Structural characterization shows that film growth under lower partial pressure exhibits a minor impurity phase which gets suppressed under higher oxygen partial pressure (OP2). The effect of OP2 during the deposition on the leakage current and the role of oxygen vacancies have been understood in the context of various charge transport mechanism. RBS study confirms the presence of oxygen content in the film studied which are responsible for the modification in the Electrical behavior of BFO/Si thin film devices. [ABSTRACT FROM AUTHOR]