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1. Heat dissipation in partially perforated phononic nano-membranes with periodicities below 100 nm

Author

Antonin M. Massoud, Valeria Lacatena, Maciej Haras, Emmanuel Dubois, Stéphane Monfray, Jean-Marie Bluet, Pierre-Olivier Chapuis, and Jean-François Robillard

Subjects
Biotechnology, TP248.13-248.65, Physics, QC1-999
Abstract

Understanding how thermal-phonon paths can be shaped is key for controlling heat dissipation at the nanoscale. Thermophononic crystals are periodic porous nanostructures with thermal conductivity deviating from effective medium theory, which is possible if the characteristic sizes are of the order of phonon mean free paths and/or if phonons are forced to flow in privileged directions. We investigate suspended silicon nanomembranes with a periodic array of partially perforated holes of original paraboloid shape, with all characteristic lengths below 100 nm. Results from scanning thermal microscopy, a thermal sensing technique derived from atomic force microscopy, indicate that partial perforation of the membranes impacts heat conduction moderately, with the holey crystals showing a thermal conductivity reduction by a factor 6 in comparison to the bulk and a factor 2.5 in comparison to the non-perforated membrane. The impact of the phononic shapes is analyzed in light of a complementary Monte Carlo ray-tracing estimate of the effective phonon mean free paths that include multiple phonon reflection and highlights phonon backscattering.

Published
2022
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7. A CMOS Compatible Thermoelectric Device made of Crystalline Silicon Membranes with Nanopores

Author

Thierno-Moussa Bah, Stanislav Didenko, Di Zhou, Tianqi Zhu, Hafsa Ikzibane, Stephane Monfray, Thomas Skotnicki, Emmanuel Dubois, Jean-François Robillard, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), STMicroelectronics [Crolles] (ST-CROLLES), This work has received: (i) funding from STMicroelectronics-IEMN common laboratory, (ii) funding from the European Research Council under the European Community’s Seventh Framework Programme (FP7/2007-2013) ERC Grant Agreement no. 338179, (iii) support from the French RENATECH network, (iv) support from the NANO2017 program, and (v) support from the French government through the National Research Agency (ANR) under program PIA EQUIPEX LEAF ANR-11-EQPX-0025 and project TIPTOP ANR-16-CE09-0023., Laboratoire commun STMicroelectronics-IEMN T4, Renatech Network, ANR-11-EQPX-0025,LEAF,Plateforme de traitement laser pour l'électronique flexible multifonctionnelle(2011), ANR-16-CE09-0023,TIPTOP,Pointes hautement sensibles pour la microscopie thermique à l'échelle nanométrique(2016), and European Project: 338179,EC:FP7:ERC,ERC-2013-StG,UPTEG(2013)

Subjects
[SPI]Engineering Sciences [physics], Mechanics of Materials, Mechanical Engineering, General Materials Science, Bioengineering, General Chemistry, Electrical and Electronic Engineering
Abstract

Herein, we report the use of nanostructured crystalline silicon as a thermoelectric material and its integration into thermoelectric devices. The proof-of-concept relies on the partial suppression of lattice thermal conduction by introducing pores with dimensions scaling between the electron mean free path and the phonon mean free path. In other words, we artificially aimed at the well-known ‘electron crystal and phonon glass’ trade-off targeted in thermoelectricity. The devices were fabricated using CMOS-compatible processes and exhibited power generation up to 5.5 mW cm−2 under a temperature difference of 280 K. These numbers demonstrate the capability to power autonomous devices with environmental heat sources using silicon chips of centimeter square dimensions. We also report the possibility of using the developed devices for integrated thermoelectric cooling.

Published
2022
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8. Thermal Analysis of Ultimately-Thinned-and-Transfer-Bonded CMOS on Mechanically Flexible Foils

Author

Jean-François Robillard, Etienne Okada, Arun Bhaskar, Flavie Braud, Justine Philippe, Emmanuel Dubois, Christine Raynaud, Francois Danneville, Daniel Gloria, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Plateforme de Caractérisation Multi-Physiques - IEMN (PCMP - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Centrale de Micro Nano Fabrication - IEMN (CMNF-IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROE SI - IEMN), Advanced NanOmeter DEvices - IEMN (ANODE - IEMN), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), STMicroelectronics, Renatech Network, Laboratoire commun STMicroelectronics-IEMN T4, ANR-11-EQPX-0025,LEAF,Plateforme de traitement laser pour l'électronique flexible multifonctionnelle(2011), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Centrale de Micro Nano Fabrication - IEMN (CMNF - IEMN), and Microélectronique Silicium - IEMN (MICROELEC SI - IEMN)

Subjects
Materials science, Silicon, thin film, Silicon on insulator, chemistry.chemical_element, 02 engineering and technology, Substrate (printing), flexible electronics, 01 natural sciences, [SPI]Engineering Sciences [physics], Thermal conductivity, 0103 physical sciences, thermal management, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electrical and Electronic Engineering, Thin film, Electrical conductor, SOI, 010302 applied physics, business.industry, CMOS, 021001 nanoscience & nanotechnology, Flexible electronics, Electronic, Optical and Magnetic Materials, chemistry, Optoelectronics, lcsh:Electrical engineering. Electronics. Nuclear engineering, 0210 nano-technology, business, lcsh:TK1-9971, Polyimide, Biotechnology
Abstract

International audience; Thinned CMOS chips transfer-bonded onto a compliant host substrate remain to date the technology of choice for applications requiring both mechanical flexibility and high frequency operation. However, the use of poorly thermally conductive host substrates raises the problem of thermal management of flexible electronics, a topic poorly addressed in literature. In this letter, we report the analysis of flexible SOI-CMOS chips ultimately-thinned-and-transfer-bonded (UTTB) onto polyimide and copper substrates. While the temperature remains limited to ∼68 • C on the native silicon substrate or after transfer onto a copper host substrate, infrared thermography reveals temperature peaks of up to 118 • C on polyimide. The impact of self-heating in flexible SOI-CMOS is correlated with electrical performance for the three types of substrates. Beyond the property of mechanical flexibility it provides, a copper substrate is shown to slightly strengthen electrostatic integrity while maintaining a thermal landscape close to that of silicon.

Published
2019
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9. Plasmonic layer as a localized temperature control element for surface plasmonic resonance-based sensors

Author

Laurent Hay, S. Maricot, Jean-Pierre Vilcot, Jean-François Robillard, Etienne Okada, Sivaramakrishnan Ganesan, Mohamed-Taieb Bakouche, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Optoélectronique - IEMN (OPTO - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Plateforme de Caractérisation Multi-Physiques - IEMN (PCMP - IEMN), Laboratoire de Physique des Lasers, Atomes et Molécules - UMR 8523 (PhLAM), Université de Lille-Centre National de la Recherche Scientifique (CNRS), This research was partly funded by the European Regional Development Fund, via the Interreg V France-Wallonie-Vlaanderen programme, under the 'Biosens' project and the 'SmartBioControl' project portfolio, and the University of Lille for the PhD grant of Sivaramakhrishnan GANESAN. The authors want to thank the support of the RENATECH network for the use of the clean room facilities of the IEMN laboratory., Renatech Network, Université catholique de Lille (UCL)-Université catholique de Lille (UCL), INSA Institut National des Sciences Appliquées Hauts-de-France (INSA Hauts-De-France), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), and PCMP CHOP

Subjects
localized heating, Materials science, 02 engineering and technology, 010402 general chemistry, lcsh:Chemical technology, 01 natural sciences, Biochemistry, plasmonic sensor, Article, Analytical Chemistry, Thermal, lcsh:TP1-1185, [PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det], Electrical and Electronic Engineering, Surface plasmon resonance, Penetration depth, Instrumentation, Plasmon, temperature control, Temperature control, business.industry, 021001 nanoscience & nanotechnology, Atomic and Molecular Physics, and Optics, 0104 chemical sciences, Optoelectronics, 0210 nano-technology, business, Joule heating, Layer (electronics), Refractive index, surface plasmon resonance
Abstract

International audience; Surface plasmon resonance (SPR) sensing is a well-established high-sensitivity, label-free and real-time detection technique for biomolecular interaction study. Its primary working principle consists of the measurement of the optical refractive index of the medium that is in close vicinity of the sensor surface. Bio-functionalization techniques allow biomolecular events to be located in such a way. Since optical refractive indices of any medium varies with the temperature, the place where the measurement takes place shall be within a temperature-controlled environment in order to ensure any temperature fluctuation is interpreted as a biomolecular event. Since the SPR measurement probes the sensed medium within the penetration depth of the plasmonic wave, which is less or in the order of 1 µm, we propose to use the metallic film constituting the detection surface as a localized heater aiming at controlling finely and quickly the temperature of the sensed medium. The Joule heating principle is then used and the modeling of the heater is reported as well as its validation by thermal IR imaging. Using water as a demonstration medium, SPR measurement results at different temperatures are successfully compared to the theoretical optical refractive index of water versus temperature.

Published
2021
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10. Large-area femtosecond laser milling of silicon employing trench analysis

Author

Etienne Okada, Flavie Braud, Cedric Durand, Christophe Gaquiere, Vanessa Avramovic, Emmanuel Dubois, Justine Philippe, Jean-François Robillard, Daniel Gloria, Arun Bhaskar, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Centrale de Micro Nano Fabrication - IEMN (CMNF - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Plateforme de Caractérisation Multi-Physiques - IEMN (PCMP - IEMN), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), STMicroelectronics [Crolles] (ST-CROLLES), Puissance - IEMN (PUISSANCE - IEMN), Renatech Network, Laboratoire commun STMicroelectronics-IEMN T4, PCMP CHOP, ANR-11-EQPX-0025,LEAF,Plateforme de traitement laser pour l'électronique flexible multifonctionnelle(2011), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), and Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)

Subjects
Materials science, Silicon-oninsulator (SOI) technology, FOS: Physical sciences, Laser milling, Applied Physics (physics.app-ph), Systems and Control (eess.SY), 02 engineering and technology, Surface finish, 01 natural sciences, Radio-frequency (RF) integrated circuits, Electrical Engineering and Systems Science - Systems and Control, Optical profilometer characterization, law.invention, [SPI]Engineering Sciences [physics], Etching (microfabrication), law, 0103 physical sciences, FOS: Electrical engineering, electronic engineering, information engineering, Surface roughness, [SPI.GPROC]Engineering Sciences [physics]/Chemical and Process Engineering, Crystalline silicon, Electrical and Electronic Engineering, 010302 applied physics, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Laser ablation, business.industry, Physics - Applied Physics, 021001 nanoscience & nanotechnology, Laser, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Surface micromachining, Femtosecond laser micromachining, Femtosecond, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, 0210 nano-technology, business
Abstract

A femtosecond laser is a powerful tool for micromachining of silicon. In this work, large-area laser ablation of crystalline silicon is comprehensively studied using a laser source of pulse width 300 fs at two wavelengths of 343 nm and 1030 nm. We develop a unique approach to gain insight into the laser milling process by means of detailed analysis of trenches. Laser scribed trenches and milled areas are characterized using optical profilometry to extract dimensional and roughness parameters with accuracy and repeatability. In a first step, multiple measures of the trench including the average depth, the volume of recast material, the average longitudinal profile roughness, the inner trench width and the volume removal rate are studied. This allows for delineation of ablation regimes and associated characteristics allowing to determine the impact of fluence and repetition rate on laser milling. In a second step, additional factors of debris formation and material redeposition that come into play during laser milling are further elucidated. These results are utilized for processing large-area (up to few mm2) with milling depths up to 200 {\mu}m to enable the fabrication of cavities with low surface roughness at high removal rates of up to 6.9 {\mu}m3 {\mu}s-1. Finally, laser processing in combination with XeF2 etching is applied on SOI-CMOS technology in the fabrication of radio-frequency (RF) functions standing on suspended membranes. Performance is considerably improved on different functions like RF switch (23 dB improvement in 2nd harmonic), inductors (near doubling of Q-factor) and LNA (noise figure improvement of 0.1 dB) demonstrating the applicability of milling to radio-frequency applications., Comment: 23 pages, 16 figures

Published
2020
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11. Substrate engineering of inductors on SOI for improvement of Q-factor and application in LNA

Author

Jean-François Robillard, Cedric Durand, Flavie Braud, Christophe Gaquiere, Vanessa Avramovic, Arun Bhaskar, Emmanuel Dubois, Justine Philippe, Daniel Gloria, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Plateforme de Caractérisation Multi-Physiques - IEMN (PCMP - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Centrale de Micro Nano Fabrication - IEMN (CMNF-IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROE SI - IEMN), STMicroelectronics [Crolles] (ST-CROLLES), Puissance - IEMN (PUISSANCE - IEMN), Renatech Network, Laboratoire commun STMicroelectronics-IEMN T1, Laboratoire commun STMicroelectronics-IEMN T4, PCMP CHOP, ANR-11-EQPX-0025,LEAF,Plateforme de traitement laser pour l'électronique flexible multifonctionnelle(2011), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Centrale de Micro Nano Fabrication - IEMN (CMNF - IEMN), and Microélectronique Silicium - IEMN (MICROELEC SI - IEMN)

Subjects
Materials science, inductors, Silicon on insulator, FOS: Physical sciences, Context (language use), 02 engineering and technology, Applied Physics (physics.app-ph), Systems and Control (eess.SY), Inductor, Noise figure, Electrical Engineering and Systems Science - Systems and Control, 01 natural sciences, Noise (electronics), Capacitance, 010309 optics, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, FOS: Electrical engineering, electronic engineering, information engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electrical and Electronic Engineering, Electronic circuit, SOI, laser processing, business.industry, CMOS, 020208 electrical & electronic engineering, Physics - Applied Physics, Electronic, Optical and Magnetic Materials, LNA, membranes, Q factor, Optoelectronics, lcsh:Electrical engineering. Electronics. Nuclear engineering, business, lcsh:TK1-9971, Biotechnology
Abstract

High Q-factor inductors are critical in designing high performance RF/microwave circuits on SOI technology. Substrate losses is a key limiting factor when designing inductors with high Q-factors. In this context, we report a substrate engineering method that enables improvement of quality factors of already fabricated inductors on SOI. A novel femtosecond laser milling process is utilized for the fabrication of locally suspended membranes of inductors with handler silicon completely etched. Such flexible membranes suspended freely on the BOX show up to 92 % improvement in Q factor for single turn inductor. The improvement in Q-factor is reported on large sized inductors due to reduced parallel capacitance which allows enhanced operation of inductors at high frequencies. A compact model extraction methodology has been developed to model inductor membranes. These membranes have been utilized for the improvement of noise performance of LNA working in the 4.9,5.9 GHz range. A 0.1 dB improvement in noise figure has been reported by taking an existing design and suspending the input side inductors of the LNA circuit. The substrate engineering method reported in this work is not only applicable to inductors but also to active circuits, making it a powerful tool for enhancement of RF devices., Comment: 11 pages, 13 figures

Published
2020
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12. Thermal conductivity of deca-nanometric patterned Si membranes by multiscale simulations

Author

Pier Luca Palla, Evelyne Martin, Jean-François Robillard, Hayat Zaoui, David Lacroix, Fabrizio Cleri, Konstantinos Termentzidis, Stefano Giordano, Maxime Verdier, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Physique-IEMN (PHYSIQUE-IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Acoustique Impulsionnelle & Magnéto-Acoustique Non linéaire - Fluides, Interfaces Liquides & Micro-Systèmes - IEMN (AIMAN-FILMS-IEMN), Laboratoire Énergies et Mécanique Théorique et Appliquée (LEMTA ), Université de Lorraine (UL)-Centre National de la Recherche Scientifique (CNRS), Microélectronique Silicium - IEMN (MICROE SI - IEMN), Centre d'Energétique et de Thermique de Lyon (CETHIL), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), IMPACT N4S, ANR-15-IDEX-0004,LUE,Isite LUE(2015), Institut d’Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520 (IEMN), Ecole Centrale de Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Laboratoire International associé sur les phénomènes Critiques et Supercritiques en électronique fonctionnelle, acoustique et fluidique (LIA LICS/LEMAC), Ecole Centrale de Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Ecole Centrale de Lille-Université de Lille-Université Polytechnique Hauts-de-France (UPHF)-Université Polytechnique Hauts-de-France (UPHF), Physique - IEMN (PHYSIQUE - IEMN), Acoustique Impulsionnelle & Magnéto-Acoustique Non linéaire - Fluides, Interfaces Liquides & Micro-Systèmes - IEMN (AIMAN-FILMS - IEMN), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), AcknowledgementsCalculations were performed on the facilities of IEMN (clustphy), of IJL-LEMTA (Ermione cluster) and on the computational ressources from GENCI (Grand Equipement National de CalculIntensif) (Grants No. [2014]-x2014097186 and [2016:2017]-A001097600)., Institut d’Électronique, de Microélectronique et de Nanotechnologie - Département Opto-Acousto-Électronique - UMR 8520 (IEMN-DOAE), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-INSA Institut National des Sciences Appliquées Hauts-de-France (INSA Hauts-De-France)-Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-INSA Institut National des Sciences Appliquées Hauts-de-France (INSA Hauts-De-France), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université Claude Bernard Lyon 1 (UCBL), and Université de Lyon

Subjects
Fabrication, Materials science, Silicon, Monte Carlo method, chemistry.chemical_element, 02 engineering and technology, 01 natural sciences, Silicon membranes, Thermal conductivity, 0103 physical sciences, Surface roughness, [NLIN]Nonlinear Sciences [physics], Thin film, ComputingMilieux_MISCELLANEOUS, [PHYS]Physics [physics], 010302 applied physics, Fluid Flow and Transfer Processes, Condensed matter physics, Mechanical Engineering, 021001 nanoscience & nanotechnology, Condensed Matter Physics, [INFO.INFO-MO]Computer Science [cs]/Modeling and Simulation, Membrane, Thermoelectric generator, chemistry, [SPI.MECA.THER]Engineering Sciences [physics]/Mechanics [physics.med-ph]/Thermics [physics.class-ph], 0210 nano-technology, Simulation
Abstract

International audience; The hollowing of silicon membranes to form a lattice of cylindrical holes, also called phononic crystal, has been used by several experimental groups willing to fabricate efficient thermoelectric modules. The idea is to reduce the thermal conductivity without impacting the electronic conductivity. For several a priori identical materials, i.e. thin films containing periodic cylindrical holes, drastically different levels of thermal conductivity reduction have been reported in the literature: from 1–2 W K−1 m−1 to 15–40 W K−1 m−1, i. e. half the thermal conductivity of the plain membrane. These differences may be due to variations in the geometrical patterns, or to the technological processes specific to each group. It is therefore highly desirable to understand which level of reduction can be expected from the basic concept. In this work, we address the question by applying a fully atomistic framework, the approach-to-equilibrium molecular dynamics (AEMD), to study two deca-nanometric patterns used in the literature and reported respectively with a high and low level of thermal conductivity reduction. For both patterns, the thermal conductivity roughly decreases by a factor 2 only compared to the plain membrane. Thanks to Monte Carlo simulations, in agreement with AEMD for the two patterns, we propose that the origin of stronger reductions could be an increase of the surface roughness during the step of hole fabrication.

Published
2018
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13. Femtosecond laser micromachining of crystalline silicon for ablation of deep macro-sized cavities for silicon-on-insulator applications

Author

Jean-François Robillard, Daniel Gloria, Flavie Braud, Emmanuel Dubois, Justine Philippe, Etienne Okada, Arun Bhaskar, Christophe Gaquiere, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Centrale de Micro Nano Fabrication - IEMN (CMNF-IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Plateforme de Caractérisation Multi-Physiques - IEMN (PCMP - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Microélectronique Silicium - IEMN (MICROE SI - IEMN), STMicroelectronics, Puissance - IEMN (PUISSANCE - IEMN), Renatech Network, Laboratoire commun STMicroelectronics-IEMN T4, ANR-11-EQPX-0025,LEAF,Plateforme de traitement laser pour l'électronique flexible multifonctionnelle(2011), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), Centrale de Micro Nano Fabrication - IEMN (CMNF - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), and Université catholique de Lille (UCL)-Université catholique de Lille (UCL)

Subjects
010302 applied physics, Materials science, Silicon, business.industry, chemistry.chemical_element, Silicon on insulator, 02 engineering and technology, Substrate (electronics), 021001 nanoscience & nanotechnology, Laser, 01 natural sciences, law.invention, [SPI]Engineering Sciences [physics], Surface micromachining, chemistry, law, Fiber laser, 0103 physical sciences, Optoelectronics, Wafer, Crystalline silicon, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS
Abstract

We demonstrate the use of femtosecond laser micromachining for ablating macro-sized cavities in crystalline silicon. The method employed is laser milling in which the focused laser beam is raster scanned over the area to be removed. We report the achievement of very high volume ablation rates for the cavity of up to 8.48x106 μm3 s-1. To achieve such high rates, we make use of a high average power fiber laser source of 1030 nm wavelength and variable per pulse energy of up to 100 μJ. By carefully controlling the process variables such as pulse energy, repetition rate and scanner speed, the tradeoffs between micromachining quality and ablation rate are quantified. The developed process is applied on Siliconon-Insulator (SOI) wafers for improving performance of RF devices. By making use of laser removal and an additional step of selective silicon etch using XeF2, handler silicon is removed completely under RF circuits such as SP9T switch. The local removal of silicon under such circuits completely eliminates the losses and non-linearities caused by the coupling of RF signals to the semi-conducting substrate. Small-signal and large-signal RF measurements are performed before and after substrate removal to quantify the performance gain. The obtained performance after substrate removal is better than specialized RF-SOI substrates such as trap-rich SOI. This is of practical significance for next generation wireless technologies like 5G which operate at higher frequencies with stringent specifications. The proposed method is also potentially useful for fabricating membrane based devices in SOI technology such as pressure sensors.

Published
2019
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14. Large-area femtosecond laser ablation of Silicon to create membrane with high performance CMOS-SOI RF functions

Author

Etienne Okada, Christophe Gaquiere, Matthieu Berthomé, Emmanuel Dubois, Justine Philippe, Daniel Gloria, Arun Bhaskar, Jean-François Robillard, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Plateforme de Caractérisation Multi-Physiques - IEMN (PCMP - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Microélectronique Silicium - IEMN (MICROE SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), STMicroelectronics, Puissance - IEMN (PUISSANCE - IEMN), Laboratoire commun STMicroelectronics-IEMN T4, Renatech Network, ANR-11-EQPX-0025,LEAF,Plateforme de traitement laser pour l'électronique flexible multifonctionnelle(2011), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), and ACKNOWLEDGMENT This work was supported by: i) the STMicroelectronicsIEMN common laboratory ii) the French government through the National Research Agency (ANR) under program PIA EQUIPEX LEAF ANR-11-EQPX-0025 and iii) the French RENATECH network on micro and nanotechnologies.

Subjects
Materials science, Silicon, Silicon on insulator, chemistry.chemical_element, 02 engineering and technology, Substrate (electronics), 01 natural sciences, Femtosecond laser ablation, law.invention, [SPI]Engineering Sciences [physics], law, Etching (microfabrication), 0103 physical sciences, Insertion loss, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010302 applied physics, Capacitive coupling, business.industry, Substrate engineering, 021001 nanoscience & nanotechnology, Laser, chemistry, Femtosecond, RF front end module, Optoelectronics, 0210 nano-technology, business
Abstract

International audience; Femtosecond laser processing is a tool of increasing relevance for controlled etching of metals, semiconductors, and dielectrics with minimum collateral damage. We make use of this technique to remove silicon locally from the handler substrate of Silicon-on-Insulator (SOI) dies. By combining laser removal with XeF2 etching, we create thin membranes of SP9T switch, with the handler silicon completely removed underneath. This is done in order to mitigate the losses and non-linear products caused by capacitive coupling to the handler substrate. We demonstrate the improvement of linearity and insertion loss of a switch (Fig. 9 and Fig. 10) by employing the proposed method. This could be of potential interest for future wireless applications like 5G.

Published
2018
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16. Influence of amorphous layers on the thermal conductivity of phononic crystals

Author

Thierno-Moussa Bah, Konstantinos Termentzidis, Jean-François Robillard, Maxime Verdier, David Lacroix, Evelyne Lampin, Stanislav Didenko, Laboratoire Énergies et Mécanique Théorique et Appliquée (LEMTA ), Université de Lorraine (UL)-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Physique - IEMN (PHYSIQUE - IEMN), STMicroelectronics [Crolles] (ST-CROLLES), Centre d'Energétique et de Thermique de Lyon (CETHIL), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), IMPACT N4S, Renatech Network, Laboratoire commun STMicroelectronics-IEMN T4, ANR-15-IDEX-0004,LUE,Isite LUE(2015), European Project: 338179,EC:FP7:ERC,ERC-2013-StG,UPTEG(2013), Microélectronique Silicium - IEMN (MICROE SI - IEMN), Physique-IEMN (PHYSIQUE-IEMN), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université Claude Bernard Lyon 1 (UCBL), and Université de Lyon

Subjects
Amorphous silicon, Resistive touchscreen, Materials science, Silicon, chemistry.chemical_element, 02 engineering and technology, Surface finish, 021001 nanoscience & nanotechnology, 01 natural sciences, Amorphous solid, chemistry.chemical_compound, Condensed Matter::Materials Science, Membrane, Thermal conductivity, chemistry, Phase (matter), 0103 physical sciences, [SPI.MECA.THER]Engineering Sciences [physics]/Mechanics [physics.med-ph]/Thermics [physics.class-ph], [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Composite material, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010306 general physics, 0210 nano-technology
Abstract

International audience; The impact of amorphous phases around the holes and at the upper and lower free surfaces on thermal transport in silicon phononic membranes is studied. By means of molecular dynamics and Monte Carlo simulations, we explore the impact of the amorphous phase (oxidation and amorphous silicon), surfaces roughness, and a series of geometric parameters on thermal transport. We show that the crystalline phase drives the phenomena; the two main parameters are (i) the crystalline fraction between two holes and (ii) the crystalline thickness of the membranes. We reveal the hierarchical impact of nanostructurations on the thermal conductivity, namely, from the most resistive to the less resistive: the creation of holes, the amorphous phase around them, and the amorphization of the membranes edges. The surfaces or interfaces perpendicular to the heat flow hinder the thermal conductivity to a much greater extent than those parallel to the heat flow.

Published
2018
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17. Cost effective laser structuration of optical waveguides on thin glass interposer

Author

Jean-Marc Boucaud, Quentin Hivin, Matthieu Berthomé, Jean-Emmanuel Broquin, Frederic Gianesello, Davide Bucci, Guillaume Ducournau, Folly-Eli Ayi-Yovo, Emmanuel Dubois, Jean-François Robillard, Cedric Durand, STMicroelectronics [Crolles] (ST-CROLLES), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Photonique THz - IEMN (PHOTONIQUE THz - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), Laboratoire commun STMicroelectronics-IEMN T4, Renatech Network, ANR-11-EQPX-0025,LEAF,Plateforme de traitement laser pour l'électronique flexible multifonctionnelle(2011), Photonique THz - IEMN (PHOTONIQ THz - IEMN), and Microélectronique Silicium - IEMN (MICROE SI - IEMN)

Subjects
Materials science, Fabrication, Silicon photonics, business.industry, polymer optical waveguide, Physics::Optics, 02 engineering and technology, Substrate (electronics), Laser, Waveguide (optics), Atomic and Molecular Physics, and Optics, law.invention, [SPI.TRON]Engineering Sciences [physics]/Electronics, Femtosecond laser, thin glass interposer, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, 020210 optoelectronics & photonics, Optics, law, Etching (microfabrication), Chemical-mechanical planarization, 0202 electrical engineering, electronic engineering, information engineering, Interposer, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, business
Abstract

International audience; In order to enhance electro-optical system-in-package capabilities for silicon photonics, a cost effective fabrication process for optical waveguides integration on thin glass substrate interposer is demonstrated. Firstly, a femtosecond laser ablation coupled with a hydrofluoric acid etching is developed to create micro grooves at the glass surface. Secondly, a dry film lamination followed by chemical mechanical planarization is achieved to define surface optical waveguides by filling the micro channels. Physical characterizations of the fabricated waveguides are performed using optical and scanning electron microscopy. Finally, optical mode profile and loss characterizations confirm the optical functionality of waveguides which prove to be multimodal at 1550 nm.

Published
2017
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18. Native-oxide limited cross-plane thermal transport in suspended silicon membranes revealed by scanning thermal microscopy

Author

Pierre-Olivier Chapuis, Jean-Marie Bluet, A.M. Massoud, Valeria Lacatena, Maciej Haras, Jean-François Robillard, INL - Spectroscopies et Nanomatériaux (INL - S&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Centre d'Energétique et de Thermique de Lyon (CETHIL), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), and Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)

Subjects
Scanning thermal microscopy, Materials science, Physics and Astronomy (miscellaneous), Silicon, Thin films, Oxide, Analytical chemistry, chemistry.chemical_element, 02 engineering and technology, Conductivity, 01 natural sciences, chemistry.chemical_compound, Thermal conductivity, 0103 physical sciences, Thermodynamic states and processes, Composite material, Thermal analysis, Thermal transport, 010302 applied physics, Oxides, 021001 nanoscience & nanotechnology, Thermal conduction, Temperature metrology, Membrane, chemistry, Chemical elements, Contact impedance, [SPI.MECA.THER]Engineering Sciences [physics]/Mechanics [physics.med-ph]/Thermics [physics.class-ph], Nanoparticles, 0210 nano-technology
Abstract

International audience; By thermally characterizing nanometer-thin suspended silicon membranes with various micrometric lengths in ambient conditions, we determine simultaneously the spatial resolution of our Wollaston-probe scanning thermal microscopy experiment, which probes an area of (285 nm)2, and the effective thermal conductivity of the membranes of 40 W.m-1.K-1. This value is smaller thanthe in-plane thermal conductivity measured using other techniques in vacuum (60 W.m-1.K-1), revealing that both cross-plane and in-plane heat conduction are strongly affected by the native oxide in ambient conditions. This work also underlines that high-thermal conductivity samples can be characterized by scanning thermal microscopy when micro-patterned.

Published
2017
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19. Low work function thin film growth for high efficiency thermionic energy converter: Coupled Kelvin probe and photoemission study of potassium oxide

Author

Jean-François Robillard, Thomas Skotnicki, Emmanuel Dubois, François Morini, and Stephane Monfray

Subjects
Kelvin probe force microscope, Materials science, Silicon, business.industry, Ultra-high vacuum, chemistry.chemical_element, Thermionic emission, Surfaces and Interfaces, Condensed Matter Physics, 7. Clean energy, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Potassium oxide, chemistry.chemical_compound, chemistry, Thermoelectric effect, Materials Chemistry, Optoelectronics, Work function, Electrical and Electronic Engineering, business, Volta potential
Abstract

Recent researches in thermal energy harvesting have revealed the remarkable efficiency of thermionic energy converters comprising very low work function electrodes. From room temperature and above, this kind of converter could supply low power devices such as autonomous sensor networks. In this type of thermoelectric converters, current injection is mainly governed by a mechanism of thermionic emission at the hot electrode which explains the interest for low work function coating materials. In particular, alkali metal oxides have been identified as excellent candidates for coating converter electrodes. This paper is devoted to the synthesis and characterization of potassium peroxide K2O2 onto silicon surfaces. To determine optimal synthesis conditions of K2O2, we present diagrams showing the different oxides as a function of temperature and oxygen pressure from which phase stability characteristics can be determined. From the experimental standpoint, we present results on the synthesis of potassium oxide under ultra high vacuum and controlled temperature. The resulting surface is characterized in situ by means of photoemission spectroscopy (PES) and contact potential difference (CPD) measurements. A work function of 1.35 eV is measured which and the expected efficiency of the corresponding converter is discussed. It is generally assumed that the decrease of the work function in the alkali/oxygen/ silicon system, is attributed to the creation of a surface dipole resulting from a charge transfer between the alkali metal and oxygen.

Published
2014
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20. Synthesis and characterization of low work function alkali oxide thin films for unconventional thermionic energy converters

Author

François Morini, V. Giorgis, J.-L. Codron, Jean-François Robillard, Emmanuel Dubois, Xavier Wallart, T. Zhu, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), GREMAN (matériaux, microélectronique, acoustique et nanotechnologies) (GREMAN - UMR 7347), Institut National des Sciences Appliquées - Centre Val de Loire (INSA CVL), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Tours-Centre National de la Recherche Scientifique (CNRS), Microélectronique Silicium - IEMN (MICROE SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), EPItaxie et PHYsique des hétérostructures - IEMN (EPIPHY - IEMN), Centrale de Micro Nano Fabrication - IEMN (CMNF-IEMN), European Research Council under the European Community ERCEuropean Research Council (ERC) [338179], French RENATECH network, STMicroelectronics-IEMN Common Laboratory, Laboratoire commun STMicroelectronics-IEMN T4, Renatech Network, European Project: 338179,EC:FP7:ERC,ERC-2013-StG,UPTEG(2013), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Tours (UT)-Centre National de la Recherche Scientifique (CNRS), Université de Tours (UT)-Institut National des Sciences Appliquées - Centre Val de Loire (INSA CVL), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), and Centrale de Micro Nano Fabrication - IEMN (CMNF - IEMN)

Subjects
Materials science, Ultra-high vacuum, Analytical chemistry, Oxide, General Physics and Astronomy, chemistry.chemical_element, Thermionic emission, 02 engineering and technology, 7. Clean energy, 01 natural sciences, chemistry.chemical_compound, [SPI]Engineering Sciences [physics], X-ray photoelectron spectroscopy, 0103 physical sciences, Work function, Thin film, 010302 applied physics, business.industry, 021001 nanoscience & nanotechnology, chemistry, Caesium, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, 0210 nano-technology, business, Current density
Abstract

International audience; In this work, we present the synthesis and the characterization of low work function thin films for Micro Thermionic Converters (MTC). The objective is producing a device operating at relatively low temperature (< 1000 K). We aim at improving the MTC efficiency by reducing the work function of the electrodes and increasing the emitted current density by alkali metal oxides electrodes coating. In particular, in this work, we analyse and compare the performances of two alkali metal oxides: potassium and caesium oxides. Our choice to exploit those materials relies on their low work function and their abundance. For both materials, we present the results on the synthesis of the oxides under high vacuum and controlled temperature. The oxide thin films were characterized by X-ray photoelectron spectroscopy, photoemission, and thermionic emission measurements. By exploiting the latter technique, a quantitative evaluation of the current density, emitted by the heated oxides, is obtained as a function of temperature. Our results demonstrate that it is possible to decrease the silicon work function by almost 3 eV, enabling significant thermionic currents despite relatively low temperatures (below 850 K). Published by AIP Publishing.

Published
2016
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21. Fabrication of thin-film silicon membranes with phononic crystals for thermal conductivity measurements

Author

Maciej Haras, Jean-François Robillard, Valeria Lacatena, Emmanuel Dubois, Stephane Monfray, Thierno Moussa Bah, Stanislav Didenko, Thomas Skotnicki, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROE SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), STMicroelectronics-IEMN Common Laboratory, European Research CouncilEuropean Research Council (ERC)European Commission [338179], Laboratoire commun STMicroelectronics-IEMN T4, Renatech Network, European Project: 338179,EC:FP7:ERC,ERC-2013-StG,UPTEG(2013), and Microélectronique Silicium - IEMN (MICROELEC SI - IEMN)

Subjects
Fabrication, Materials science, Silicon, semiconductor materials measurements, phonons, chemistry.chemical_element, 02 engineering and technology, fabrication, 010402 general chemistry, 01 natural sciences, [SPI]Engineering Sciences [physics], Thermal conductivity, Electrical resistivity and conductivity, Seebeck coefficient, Thermoelectric effect, Electronic engineering, thin film devices, Electrical and Electronic Engineering, Thin film, business.industry, silicon, Thermoelectricity, 021001 nanoscience & nanotechnology, Thermoelectric materials, 0104 chemical sciences, Electronic, Optical and Magnetic Materials, chemistry, Optoelectronics, 0210 nano-technology, business
Abstract

Thermoelectricity struggles with the lack of cheap, abundant, and environmentally friendly materials. Silicon could overcome this deficiency by proposing high harvested power density, simplicity, availability, harmlessness, CMOS compatibility, and cost reduction. However, despite its high Seebeck coefficient and electrical conductivity, silicon is an inefficient thermoelectric material due to a high thermal conductivity ( $\kappa $ ). Modern nano-fabrication techniques enable reduction of $\kappa $ in silicon through attenuation of thermal phonons. In this letter, the design and the fabrication of nanostructured material onto $\kappa $ measurement platforms are presented. The proposed fabrication process is versatile and ensures compatibility with CMOS technologies. The proposed devices enable precise $\kappa $ measurement owing to a careful management of thermal losses. Characterization resulted in a two-fold ( $\kappa =59\pm 10$ W/m/K) reduction below bulk value for a 54-nm-thick plain silicon membranes. Further reduction is measured at $\kappa =34.5\pm 7.5$ W/m/K for membranes with phononic crystals.

Published
2016
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22. Improved performance of flexible CMOS technology using ultimate thinning and transfer bonding

Author

Jean-François Robillard, Emmanuel Dubois, Christophe Gaquiere, Francois Danneville, Daniel Gloria, Justine Philippe, C. Raynaud, Matthieu Berthomé, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Puissance - IEMN (PUISSANCE - IEMN), Advanced NanOmeter DEvices - IEMN (ANODE - IEMN), STMicroelectronics [Crolles] (ST-CROLLES), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Renatech Network, Laboratoire commun STMicroelectronics-IEMN T1, Laboratoire commun STMicroelectronics-IEMN T4, ANR-11-EQPX-0025,LEAF,Plateforme de traitement laser pour l'électronique flexible multifonctionnelle(2011), and Microélectronique Silicium - IEMN (MICROE SI - IEMN)

Subjects
010302 applied physics, Flexibility (engineering), Materials science, Silicon, dBm, chemistry.chemical_element, 02 engineering and technology, 021001 nanoscience & nanotechnology, CMOS integrated circuits, 01 natural sciences, radiofrequency integrated circuits, Power (physics), Stress (mechanics), MOSFET, [SPI]Engineering Sciences [physics], chemistry, CMOS, Electrical resistivity and conductivity, Logic gate, 0103 physical sciences, Electronic engineering, harmonic analysis, 0210 nano-technology, integrated circuit bonding
Abstract

International audience; Based on a simple process referred to as ultimate thinning-and-transfer-bonding (UTTB), this paper shows that the high-frequency performance of advanced CMOS technologies can be combined with mechanical flexibility and transparency. The invariance upon thinning, transfer and flexure of both DC and RF CMOS electrical characteristics is demonstrated. Specific to high power RF applications, the complete elimination of the silicon handler improves the second and third harmonic rejection by 36 and 40 dBm, respectively, when compared to a high resistivity SOI substrate.

Published
2016
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23. Thermoelectric Energy Conversion: How Good Can Silicon Be?

Author

François Morini, Jean-François Robillard, Stephane Monfray, Valeria Lacatena, Thomas Skotnicki, Emmanuel Dubois, Maciej Haras, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROE SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), STMicroelectronics-IEMN Common Laboratory, European Research CouncilEuropean Research Council (ERC)European Commission [338179], French RENATECH Network, Laboratoire commun STMicroelectronics-IEMN T4, and Microélectronique Silicium - IEMN (MICROELEC SI - IEMN)

Subjects
Materials science, Thermal properties, Silicon, Thin films, chemistry.chemical_element, FOS: Physical sciences, Nanotechnology, [SPI]Engineering Sciences [physics], Thermal conductivity, Energy storage and conversion, Thermoelectric effect, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), General Materials Science, Thin film, Power density, Condensed Matter - Materials Science, Condensed Matter - Mesoscale and Nanoscale Physics, business.industry, Mechanical Engineering, Materials Science (cond-mat.mtrl-sci), Computational Physics (physics.comp-ph), Condensed Matter Physics, Thermoelectric materials, Simulation and modeling, Cost reduction, Semiconductor, chemistry, Semiconductors, Mechanics of Materials, Electrical properties, Optoelectronics, business, Physics - Computational Physics
Abstract

International audience; Lack of materials which are thermoelectrically efficient and economically attractive is a challenge in thermoelectricity. Silicon could be a good thermoelectric material offering CMOS compatibility, harmlessness and cost reduction but it features a too high thermal conductivity. High harvested power density of 7 W/cm(2) at Delta T= 30 K is modeled based on a thin-film lateral architecture of thermo-converter that takes advantage of confinement effects to reduce the thermal conductivity. The simulation leads to the conclusion that 10 nm thick Silicon has 10 x higher efficiency than bulk. (C) 2015 Elsevier B.V. All rights reserved.

Published
2016
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24. Phase-controlling phononic crystals: Realization of acoustic Boolean logic gates

Author

Jean-François Robillard, Krishna Muralidharan, N. Swinteck, Stefan Bringuier, Pierre A. Deymier, Keith Runge, J. O. Vasseur, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
Time Factors, Acoustics and Ultrasonics, Acoustics, Phase (waves), 02 engineering and technology, Interference (wave propagation), 01 natural sciences, Motion, Optics, Arts and Humanities (miscellaneous), 0103 physical sciences, Computer Simulation, Wave vector, Polyvinyl Chloride, 010306 general physics, Boolean function, Mathematics, business.industry, Numerical Analysis, Computer-Assisted, Signal Processing, Computer-Assisted, Acoustic wave, Models, Theoretical, 021001 nanoscience & nanotechnology, Sound, Logic gate, Group velocity, Crystallization, 0210 nano-technology, business, Realization (systems)
Abstract

A phononic crystal (PC) consisting of a square array of cylindrical polyvinylchloride inclusions in air is used to construct a variety of acoustic logic gates. In a certain range of operating frequencies, the PC band structure shows square-like equi-frequency contours centered off the gamma point. This attribute allows for the realization of non-collinear wave and group velocity vectors in the PC wave vector space. This feature can be utilized to control with great precision, the relative phase between propagating acoustic waves in the PC. By altering the incidence angle of the impinging acoustic beams or varying the PC thickness, interferences occur between acoustic wave pairs. It is recognized that information can be encoded with this mechanism (e.g., wave amplitudes/interference patterns) and accordingly to construct a series of logic gates emulating Boolean functions. The NAND, XOR, and NOT gates are demonstrated with finite-difference time-domain simulations of acoustic waves impinging upon the PC.

Published
2011
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25. Application-oriented performance of RF CMOS technologies on flexible substrates

Author

Jean-François Robillard, Christophe Gaquiere, A. Lecavelier, Francois Danneville, C. Raynaud, Emmanuel Dubois, Matthieu Berthomé, Daniel Gloria, Justine Philippe, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROE SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Puissance - IEMN (PUISSANCE - IEMN), Advanced NanOmeter DEvices - IEMN (ANODE - IEMN), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), STMicroelectronics [Crolles] (ST-CROLLES), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)

Subjects
Materials science, Silicon, chemistry.chemical_element, Silicon on insulator, 02 engineering and technology, flexible electronics, 01 natural sciences, 7. Clean energy, [SPI]Engineering Sciences [physics], 0103 physical sciences, Electronic engineering, 010302 applied physics, Flexibility (engineering), business.industry, CMOS integrated circuits, 021001 nanoscience & nanotechnology, radiofrequency integrated circuits, silicon-on-insulator, Transparency (projection), Integrated injection logic, chemistry, CMOS, Logic gate, Optoelectronics, Radio frequency, integrated circuit bonding, 0210 nano-technology, business
Abstract

International audience; Ultimate-thinning-and-transfer-bonding (UTTB) of RF SOI-CMOS chips is demonstrated on plastic, metal and glass substrates. Beyond process simplicity, UTTB can be tailored to meet specific application requirements like ultra mechanical flexibility, heat dissipation, transparency while retaining same f(T)/f(max) performance and improving harmonic rejection when compared to conventional rigid SOI.

Published
2015
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26. Ultra-foldable/stretchable wideband RF interconnects using laser ablation of metal film on a flexible substrate

Author

Sofiene Bouaziz, Jean-François Robillard, Emmanuel Dubois, Matthieu Berthomé, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Laboratoire commun STMicroelectronics-IEMN T4, and Microélectronique Silicium - IEMN (MICROE SI - IEMN)

Subjects
Materials science, Laser ablation, business.industry, Coplanar waveguide, stretchable, Bend radius, Electrical engineering, meander RF interconnects, mechanically flexible, Conductor, Horseshoe-shape, [SPI]Engineering Sciences [physics], Meander (mathematics), CPW transmission line, Foldable, millimeter-wave, laser ablation, Optoelectronics, Transmission coefficient, business, Polyethylene naphthalate, Electrical conductor
Abstract

International audience; In this paper we demonstrate the feasibility of mechanically flexible and stretchable coplanar waveguide (CPW) transmission lines at millimeter-wave frequencies. Our approach is based on meander horseshoe-shaped CPW line on 125 mu m-thick Polyethylene Naphthalate (PEN) dielectric substrate. The desired meander shape pattern of the conductor is structured using a nanosecond pulsed laser source operating at 351 nm wavelength by the precise patterning of a 1 mu m-thick conductive film deposited on a plastic foil. The cutout is realized by following the outer meander shape path of the structure providing an ultra-flexible/ stretchable interconnect line. An experimental attenuation below 0.12 dB.mm(-1) for a 13 mm length of signal conductor has been obtained at 40 GHz. When submitted to bending on a semi-cylinder of known radius, the measured transmission coefficient show small variations less than 0.05 dB even for bending radius in the centimeter range.

Published
2015
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27. Toward quantitative modeling of silicon phononic thermocrystals

Author

Maciej Haras, Stephane Monfray, Jean-François Robillard, Emmanuel Dubois, Thomas Skotnicki, Valeria Lacatena, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), European Research Council under the European CommunityEuropean Research Council (ERC) [338179], ANRTFrench National Research Agency (ANR), Laboratoire commun STMicroelectronics-IEMN T4, and Microélectronique Silicium - IEMN (MICROE SI - IEMN)

Subjects
Physics, Work (thermodynamics), Physics and Astronomy (miscellaneous), Condensed matter physics, Silicon, Phonon, Mean free path, chemistry.chemical_element, 02 engineering and technology, 021001 nanoscience & nanotechnology, Thermoelectric materials, 01 natural sciences, [SPI]Engineering Sciences [physics], Thermal conductivity, chemistry, 0103 physical sciences, Thermal, 010306 general physics, 0210 nano-technology, Order of magnitude
Abstract

International audience; The wealth of technological patterning technologies of deca-nanometer resolution brings opportunities to artificially modulate thermal transport properties. A promising example is given by the recent concepts of "thermocrystals" or "nanophononic crystals" that introduce regular nano-scale inclusions using a pitch scale in between the thermal phonons mean free path and the electron mean free path. In such structures, the lattice thermal conductivity is reduced down to two orders of magnitude with respect to its bulk value. Beyond the promise held by these materials to overcome the well-known "electron crystal-phonon glass" dilemma faced in thermoelectrics, the quantitative prediction of their thermal conductivity poses a challenge. This work paves the way toward understanding and designing silicon nanophononic membranes by means of molecular dynamics simulation. Several systems are studied in order to distinguish the shape contribution from bulk, ultra-thin membranes (8 to 15 nm), 2D phononic crystals, and finally 2D phononic membranes. After having discussed the equilibrium properties of these structures from 300K to 400 K, the Green-Kubo methodology is used to quantify the thermal conductivity. The results account for several experimental trends and models. It is confirmed that the thin-film geometry as well as the phononic structure act towards a reduction of the thermal conductivity. The further decrease in the phononic engineered membrane clearly demonstrates that both phenomena are cumulative. Finally, limitations of the model and further perspectives are discussed. (C) 2015 AIP Publishing LLC.

Published
2015
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28. Unconventional thin-film thermoelectric converters : structure, simulation, and comparative study

Author

Jean-François Robillard, Emmanuel Dubois, Stephane Monfray, Maciej Haras, Valeria Lacatena, Thomas Skotnicki, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), and STMicroelectronics [Crolles] (ST-CROLLES)

Subjects
Materials science, Silicon, chemistry.chemical_element, 02 engineering and technology, 01 natural sciences, 7. Clean energy, thermoelectric conversion, [SPI]Engineering Sciences [physics], Thermal conductivity, Electrical resistivity and conductivity, Seebeck coefficient, 0103 physical sciences, Thermoelectric effect, Materials Chemistry, thermal conductivity reduction, CMOS compatible materials, Electrical and Electronic Engineering, 010302 applied physics, business.industry, Contact resistance, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Thermoelectric generator, chemistry, Optoelectronics, 0210 nano-technology, business, harvested power density, thin-film performance simulation, Order of magnitude
Abstract

Bi2Te3 or Sb2Te3 are the materials most widely used in thermoelectric generators (TEG) operating near room temperature. These materials are, however, environmentally harmful, expensive, and incompatible with complementary metal-oxide semiconductor technology, in contrast to silicon (Si), germanium (Ge), or silicon–germanium (SiGe). Although the thermopower (S) and electrical conductivity (σ) of Si and Ge are high, use in thermoelectricity is severely hindered by their high thermal conductivity (κ). By altering the phonon band structure of this Si films by use of an artificial phononic pattern, spectacular reduction of κ by two orders of magnitude has been demonstrated. To take full advantage of phonon band modification and scattering in thin films, converter structure based on thin-film membranes is proposed for κ reduction. To consolidate the position of Si-based materials, coupled charge and heat-transport simulations have been conducted to demonstrate the potential of the materials for thermoelectric conversion compared with such widespread materials as Bi2Te3. The effect of contact resistance on generator performance has been carefully taken into consideration to reflect integration constraints at the TEG level. For a temperature difference ΔT = 30 K, the maximum electrical power density reaches approximately 6 W/cm2 for Si and Ge, and approximately 3 W/cm2 for Si0.7Ge0.3, values which are similar to those for Bi2Te3. Finally, it is emphasized that the proposed approach is compatible with conventional Si technology and naturally provides augmented mechanical flexibility that substantially widens the field of application of thermal harvesting.

Published
2014
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29. Invariance of DC and RF Characteristics of Mechanically Flexible CMOS Technology on Plastic

Author

Justine Philippe, Christine Raynaud, Jean-François Robillard, Emmanuel Dubois, Y. Tagro, Francois Danneville, Daniel Gloria, Sylvie Lepilliet, Jacek Ratajczak, and Aurélien Lecavelier des Etangs-Levallois

Subjects
Flexibility (engineering), Materials science, Lapping, CMOS, Nanoelectronics, law, Transistor, Electronic engineering, Silicon on insulator, Electrical measurements, law.invention, Electronic circuit
Abstract

Combining the electrical performance of modern high frequency silicon nanoelectronics with additional properties of mechanical flexibility and stretchability continuously arouses a sustained interest for its utility in a broad range of space-weight-and-power (SWAP) constrained applications related to e.g. healthcare, structure monitoring, sport, telecommunication, security chips. However, the fabrication of transistors and circuits featuring high electrical performance independently of their deformation state (i.e. flat, folded, or stretched for instance) still constitutes an unresolved challenge. Although many different techniques based on the transfer of high mobility nanostructures or patterned thin-films onto flexible plastic foils constitute possible solutions with their respective advantages and weaknesses, little attention has been paid so far to the thinning of mature rigid technology in the ultra-thin regime followed by transfer-bonding onto a flexible handler. The basic idea developed in this chapter is to combine the advantages of a mature radio-frequency (RF) SOI-CMOS technology with mechanical flexibility provided by thinning. Moreover, performance invariance of flexible systems is another challenge requiring a careful inspection to retain function and to guarantee operation stability. A method based on silicon thinning, transfer-bonding and neutral plane engineering is therefore proposed to produce flexible devices and circuits combining high electrical and mechanical performance, in addition to functional invariance upon deformation. In this chapter, it is demonstrated that SOI MOSFETs featuring high frequency, low noise and low power characteristics can withstand curvature radii down to the centimetre range without noticeable variation of their static and high frequency performance. The thinning and transfer-bonding of rigid technology is performed using successive chemical–mechanical lapping, wet etching and dry cleaning steps followed by room temperature bonding. Static, high frequency and noise characterization completely validate this process. Consistently with mechanical modelling, electrical measurements in bent configurations confirm the invariance of electrical performance upon flexure. Beyond the in-depth analysis of SOI-MOSFETs, CMOS circuits have been characterized to demonstrate that this technology paves the way to flexible electronic applications requiring complexity and frequency performance.

Published
2014
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30. Phononic engineering of silicon using 'dots on the fly' e-beam lithography and plasma etching

Author

Maciej Haras, Jean-François Robillard, Stephane Monfray, Emmanuel Dubois, Thomas Skotnicki, Valeria Lacatena, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), and STMicroelectronics [Crolles] (ST-CROLLES)

Subjects
Materials science, Plasma etching, business.industry, plasma etching, Condensed Matter Physics, phononics, Atomic and Molecular Physics, and Optics, thermoelectricity, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Condensed Matter::Materials Science, Optics, Thermal conductivity, Semiconductor, Etching (microfabrication), Seebeck coefficient, Thermoelectric effect, Optoelectronics, Electrical and Electronic Engineering, business, Lithography, Electron-beam lithography, e-beam lithography
Abstract

Nowadays, the interest in reducing the lattice thermal conductivity (kL), without affecting the electrical one (ke), represents one of the main objectives for researchers in thermoelectricity. In semiconductors, lattice vibrations contribute about 95% to thermal conductivity. Because phonons and electrons transport operates over markedly different length scales, the power factor (S2r), and consequently the ZT factor of merit, can be significantly improved through the reduction of kL without sacrifying the electrical conductivity (r) and the Seebeck coefficient (S). In this work, we focus on the realization of an efficient e-beam lithography patterning methodology for phononic crystals to investigate thermal conductivity reduction in novel integrated thin film converters. The adopted ''dots on the fly'' lithography strategy, combined with an appropriate anisotropic plasma etching technique, permits the fabrication of phononic crystal patterns with minimal dimensions, easy layout and writing speeds 3 orders of magnitude larger of those obtained by conventional techniques. 2014 Elsevier B.V. All rights reserved.

Published
2014
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31. 2D-3D phononic crystals

Author

N. Swinteck, Jean-François Robillard, John H. Page, A. Sukhovich, Pierre A. Deymier, Jérôme Olivier Vasseur, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Acoustique - IEMN, Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Deymier P.A., and Acoustique - IEMN (ACOUSTIQUE - IEMN)

Subjects
Materials science, Band gap, business.industry, Spectral properties, Finite-difference time-domain method, Physics::Optics, Ranging, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Refraction, [SPI]Engineering Sciences [physics], Optics, Negative refraction, Phase (matter), 0103 physical sciences, Wave vector, 010306 general physics, 0210 nano-technology, business
Abstract

This chapter presents a comprehensive description of the properties of phononic crystals ranging from spectral properties (e.g., band gaps) to wave vector properties (refraction) and phase properties. These properties are characterized by experiments and numerical simulations.

Published
2013
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32. A converging route towards very high frequency, mechanically flexible, and performance stable integrated electronics

Author

Christine Raynaud, Emmanuel Dubois, Virginie Hoel, Marie Lesecq, David Troadec, Zhenkun Chen, Francois Danneville, Sylvie Lepilliet, Y. Tagro, Jacek Ratajczak, Jean-François Robillard, Daniel Gloria, Aurélien Lecavelier des Etangs-Levallois, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), and Instytut Technologii Elektronowej (ITE)

Subjects
010302 applied physics, Signal processing, Materials science, business.industry, Transistor, Electrical engineering, General Physics and Astronomy, 02 engineering and technology, 021001 nanoscience & nanotechnology, Chip, 01 natural sciences, 7. Clean energy, Flexible electronics, law.invention, [SPI.TRON]Engineering Sciences [physics]/Electronics, CMOS, law, 0103 physical sciences, Extremely high frequency, Electronics, 0210 nano-technology, Neutral plane, business
Abstract

The ability to realize flexible circuits integrating sensing, signal processing, and communicating capabilities is of central importance for the development of numerous nomadic applications requiring foldable, stretchable, and large area electronics. A key challenge is, however, to combine high electrical performance (i.e., millimeter wave, low noise electronics) with mechanical flexibility required for chip form adaptivity in addition to highly stable electrical performance upon deformation. Here, we describe a solution based on ultimate thinning and transfer onto a plastic foil of high frequency CMOS devices initially processed on conventional silicon-on-insulator wafers. We demonstrate a methodology relying on neutral plane engineering to provide high performance stability upon bending, by locating the active layer, i.e., the transistor channel, at the neutral fiber of the flexible system. Following this strategy, record frequency performance of flexible n-MOSFETs, featuring fT/fMAX of 120/145 GHz, is reported with relative variations limited to less than 5% even under aggressive bending on cylinders with curvature radii down to 12.5 mm.

Published
2013
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33. Resolution limit of a phononic crystal superlens

Author

Jérôme Olivier Vasseur, Jean-François Robillard, John H. Page, J. Bucay, Alexey Sukhovich, Pierre A. Deymier, B. Merheb, Amit Shelke, Krishna Muralidharan, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
Diffraction, Physics, Focal point, Superlens, business.industry, Flat lens, Finite-difference time-domain method, Physics::Optics, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Electronic, Optical and Magnetic Materials, law.invention, Lens (optics), symbols.namesake, Optics, law, 0103 physical sciences, symbols, Rayleigh scattering, 010306 general physics, 0210 nano-technology, business, Image resolution
Abstract

We report on the subwavelength imaging capabilities of a phononic crystal (PC) flat lens consisting of a triangular array of steel cylinders in methanol, all surrounded by water. The image resolution of the PC flat lens beats the Rayleigh diffraction limit because bound modes in the lens can be excited by evanescent waves emitted by the source. These are modes that only propagate in the direction parallel to the water-lens interface. These modes resonantly amplify evanescent waves that contribute to the reconstruction of an image. By employing the finite difference time domain method and ultrasonic experiments, we also explore the effect on the image resolution and focal point on various structural and operational parameters, such as source frequency, geometry of the lens, source position, and time. The mechanisms by which these factors affect resolution are discussed in terms of the competition between the contribution of propagative modes to focusing and the ability of the source to excite bound modes of the PC lens.

Published
2011
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34. Phase-controlling phononic crystal

Author

Stefan Bringuier, Pierre A. Deymier, J. O. Vasseur, Keith Runge, N. Swinteck, J. Bucay, Krishna Muralidharan, Jean-François Robillard, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
Materials science, Physics and Astronomy (miscellaneous), Wave propagation, business.industry, Plane wave expansion method, Phase (waves), Physics::Optics, 02 engineering and technology, Acoustic wave, 021001 nanoscience & nanotechnology, 01 natural sciences, Refraction, Crystal, [SPI]Engineering Sciences [physics], Optics, Angle of incidence (optics), 0103 physical sciences, Group velocity, 010306 general physics, 0210 nano-technology, business
Abstract

We report on a phononic crystal (PC) consisting of a square array of cylindrical polyvinylchloride inclusions in air that can be used to control the relative phase of two incident acoustic waves with different incident angles. The phase shift between waves propagating through the crystal depends on the angle of incidence of the incoming waves and the PC length. The behavior of the PC is analyzed using the finite-difference-time-domain method. The band structure and equifrequency contours calculated via the plane wave expansion method show that the distinctive phase controlling properties are attributed to noncollinear wave and group velocity vectors in the PC as well as the degree of refraction.

Published
2011
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35. Phase-control in two-dimensional phononic crystals

Author

Jean-François Robillard, Keith Runge, J. O. Vasseur, N. Swinteck, Pierre A. Deymier, Anne-Christine Hladky-Hennion, Stefan Bringuier, University of Arizona, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
[PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Materials science, Acoustics, Phase (waves), General Physics and Astronomy, Acoustic wave, 01 natural sciences, 010305 fluids & plasmas, 0103 physical sciences, Acoustic metamaterials, Group velocity, 010306 general physics, Electronic band structure, Realization (systems), Phase control, Triangular array
Abstract

A theoretical model is developed to ascertain the necessary band structure and equi-frequency contour (EFC) features of two-dimensional phononic crystals (PCs) for the realization of phase control between propagating acoustic waves. Two different PCs, a square array of cylindrical polyvinylchloride inclusions in air and a triangular array of cylindrical steel inclusions in methanol, offer band structures and EFCs with highly dissimilar features. We demonstrate that PCs with EFCs showing non-collinear wave and group velocity vectors are ideal systems for controlling the phase between propagating acoustic waves. Finite-difference time-domain simulations are employed to validate theoretical models and demonstrate the control of phase between propagating acoustic waves in PC structures.

Published
2011
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36. Band structures tunability of bulk 2D phononic crystals made of magneto-elastic materials

Author

Anne-Christine Hladky-Hennion, J. O. Vasseur, O. Bou Matar, Pierre A. Deymier, Jean-François Robillard, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
010302 applied physics, Materials science, business.industry, Physics::Optics, General Physics and Astronomy, Magnetostriction, 02 engineering and technology, Magneto elastic, 021001 nanoscience & nanotechnology, 01 natural sciences, lcsh:QC1-999, Magnetic field, Amplitude, 0103 physical sciences, Acoustic metamaterials, Optoelectronics, 0210 nano-technology, business, Electronic band structure, lcsh:Physics
Abstract

The feasibility of contactless tunability of the band structure of two-dimensional phononic crystals is demonstrated by employing magnetostrictive materials and applying an external magnetic field. The influence of the amplitude and of the orientation with respect to the inclusion axis of the applied magnetic field are studied in details. Applications to tunable selective frequency filters with switching functionnality and to reconfigurable wave-guides and demultiplexing devices are then discussed.

Published
2011
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37. Tunable magnetoelastic phononic crystals

Author

O. Bou Matar, Anne-Christine Hladky-Hennion, Pierre A. Deymier, Jean-François Robillard, M. Stippinger, Yan Pennec, J. O. Vasseur, Bahram Djafari-Rouhani, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
010302 applied physics, Coupling, Materials science, Physics and Astronomy (miscellaneous), Condensed matter physics, Plane wave expansion method, Band gap, Physics::Optics, Magnetostriction, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Magnetic field, Vibration, Crystal, Condensed Matter::Superconductivity, 0103 physical sciences, 0210 nano-technology, Electronic band structure
Abstract

The feasibility of tuning the band structure of phononic crystals is demonstrated by employing magnetostrictive materials and applying an external magnetic field. Band structures are calculated with a plane wave expansion method that accounts for coupling between the elastic behavior and the magnetic field through the development of elastic, piezomagnetic, and magnetic permeability effective tensors. We show the contactless tunability of the absolute band gaps of a two-dimensional phononic crystal composed of an epoxy matrix and Terfenol-D inclusions. The tunable phononic crystal behaves like a transmission switch for elastic waves when the magnitude of an applied magnetic field crosses a threshold.

Published
2009
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38. Complete thin film mechanical characterization using picosecond ultrasonics and nanostructured transducers : experimental demonstration on SiO2

Author

Jean-François Robillard, Pierre-Adrien Mante, Arnaud Devos, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
010302 applied physics, Materials science, Physics and Astronomy (miscellaneous), business.industry, Young's modulus, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Poisson's ratio, symbols.namesake, Transducer, Optics, Picosecond, 0103 physical sciences, symbols, Optoelectronics, Picosecond ultrasonics, Ultrasonic sensor, Thin film, 0210 nano-technology, business, Layer (electronics)
Abstract

Complete mechanical measurements are performed in submicron films using the picosecond ultrasonic technique. The Al layer deposited on the top of the sample acting as a transducer is replaced with a nanostructured Al film. Using an usual picosecond ultrasonic setup we can excite and detect high-frequency longitudinal and surface acoustic waves. From this we can deduce Young’s modulus and Poisson’s ratio of any isotropic thin film. Experimental results obtained for a thin silica layer on silicon are in very good agreement with literature.

Published
2008
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39. Towards thin film complete characterization using picosecond ultrasonics

Author

Arnaud Devos, Pierre-Adrien Mante, Jean-François Robillard, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
Photoacoustic effect, Materials science, business.industry, Physics::Optics, Young's modulus, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Poisson's ratio, Characterization (materials science), Condensed Matter::Materials Science, symbols.namesake, Optics, 0103 physical sciences, symbols, Picosecond ultrasonics, Thin film, 010306 general physics, 0210 nano-technology, business, Ultrashort pulse, Longitudinal wave
Abstract

Picosecond ultrasonics is an ultrafast time-resolved technique which offers an unique way of measuring elastic properties in thin films and multi-layers. In the conventional setup only longitudinal waves can be excited by the laser. But in order to have a complete characterization, we need in-plane informations. Here, we show that using a nanostructured aluminum film as a transducer, we can excite longitudinal and high-frequency surface waves using a standard setup. By measuring longitudinal and surface velocities, we can deduce the Young modulus and the Poisson ratio which complete the characterization of any isotropic materials. Here we applied this technique to AlN, SiO2 and Si3N4.

Published
2008
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40. Collective acoustic modes in various two-dimensional crystals by ultrafast acoustics: theory and experiments

Author

Arnaud Devos, I. Roch-Jeune, Jean-François Robillard, Pierre-Adrien Mante, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
Physical acoustics, Coupling, Surface (mathematics), Physics, Acoustics, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, PACS: 63.22.m, 63.20.e, 78.47.jc, Electronic, Optical and Magnetic Materials, [PHYS.MECA.ACOU]Physics [physics]/Mechanics [physics]/Acoustics [physics.class-ph], Crystal, Excited state, 0103 physical sciences, Time-resolved spectroscopy, Thin film, 010306 general physics, 0210 nano-technology, Ultrashort pulse
Abstract

We study the elastic properties of two-dimensional phononic crystals made of aluminum nanocube lattices. From the experimental point of view, collective modes resulting from the coupling between cubes inside the crystal are excited and time resolved using ultrafast acoustics. We derive a general theoretical model of the collective modes. From the analytical expression we discuss the influence of numerous crystal parameters on the detected frequencies. We then present experimental results on various samples which all exhibit an excellent agreement with the model. The theoretical description reveals that collective modes propagate along the sample surface. From that we propose to use such modes for measuring the in-plane elastic properties of thin films.

Published
2008
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41. Picosecond ultrasonic investigations of phonons in 2D nano-scaled lattices

Author

Jean-François Robillard, I. Roch-Jeune, Arnaud Devos, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
History, Materials science, Phonon, business.industry, 02 engineering and technology, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, Laser, 01 natural sciences, Molecular physics, Computer Science Applications, Education, law.invention, Optics, law, Dispersion relation, Picosecond, Lattice (order), 0103 physical sciences, Femtosecond, Nano, Ultrasonic sensor, 010306 general physics, 0210 nano-technology, business
Abstract

We time-resolved the acoustical response of lattices of aluminum nano-dots with a step of a few hundreds nanometers using tunable femtosecond laser pulses in a pump and probe scheme. We detected two kinds of modes, the first being the individual modes of the dots. The other modes are shown to be both dependent on the dot size and on the lattice and are thus interpreted as collective modes. Using several step sizes we show that we can plot the phonon dispersion relation. A simple analytical model very well reproduces the data from which we can describe completely the dependence of the lattice modes on the sample parameters.

Published
2007
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42. Time-resolved vibrations of two-dimensional hypersonic phononic crystals

Author

Jean-François Robillard, I. Roch-Jeune, Arnaud Devos, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
Physics::Optics, 02 engineering and technology, Optical field, 01 natural sciences, Molecular physics, law.invention, Crystal, Lattice constant, Optics, Complementary experiments, law, Lattice (order), 0103 physical sciences, 010306 general physics, Physics, business.industry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Laser, Electronic, Optical and Magnetic Materials, [PHYS.MECA.ACOU]Physics [physics]/Mechanics [physics]/Acoustics [physics.class-ph], Vibration, PACS: 63.22.+m, 63.20.Dj, 78.20.Hp, 78.47.+p, 0210 nano-technology, business, Ultrashort pulse
Abstract

We fabricate e-beam lithographied two-dimensional lattices of nanometric metal cubes of various sizes and lattice parameters. Using ultrafast laser acoustics, we time resolve two kinds of vibrations in such crystals: individual cube vibrations and lower frequencies strongly dependent on the lattice parameter. From complementary experiments and an analytical model, we assign these modes to acoustic collective vibrations (i.e., acoustic phonons) of the artificial crystal. Their unprecedented detection takes advantage of another periodicity effect acting on the optical field.

Published
2007
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43. High laser-wavelength sensitivity of the picosecond ultrasonic response in transparent thin films

Author

Arnaud Devos, P. Emery, R. Côte, Jean-François Robillard, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
Materials science, Physics::Optics, 02 engineering and technology, 01 natural sciences, Displacement (vector), law.invention, Optics, law, 0103 physical sciences, Sensitivity (control systems), Thin film, 010302 applied physics, [PHYS]Physics [physics], business.industry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Laser, Electronic, Optical and Magnetic Materials, Wavelength, Amplitude, Picosecond, Optoelectronics, Ultrasonic sensor, sense organs, 0210 nano-technology, business
Abstract

We explore from both the theoretical and experimental points of view the influence of the laser wavelength on the strain pulses detected in thin transparent layers using the picosecond ultrasonic technique. From a theoretical analysis of the displacement detection involved in such experiments, we predict amplitude and sign changes in the detected signals as the laser is tuned. Experimental results performed on various samples and at different wavelengths are found to be in excellent agreement with the theoretical description. Several applications based on the high sensitivity of the phenomenon are finally proposed.

Published
2006
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44. Individual and collective vibrational modes of nanostructures studied by picosecond ultrasonics

Author

Jean-François Robillard, Bernard Perrin, Laurent Belliard, Arnaud Devos, I. Roch-Jeune, T. Bienville, Institut des Nanosciences de Paris (INSP), Université Pierre et Marie Curie - Paris 6 (UPMC)-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
Vibration mode, Materials science, Acoustics and Ultrasonics, 02 engineering and technology, Radiation Dosage, 01 natural sciences, Molecular physics, Vibration, Crystal, Condensed Matter::Materials Science, [SPI]Engineering Sciences [physics], Optics, Normal mode, 0103 physical sciences, Materials Testing, Physics::Atomic and Molecular Clusters, Computer Simulation, Ultrasonics, 010306 general physics, Electronic band structure, Radiometry, Coupling, business.industry, Lasers, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, Elasticity, Picosecond laser ultrasonic, Nanostructures, Models, Chemical, Picosecond, Molecular vibration, Picosecond ultrasonics, 0210 nano-technology, business, Algorithms
Abstract

International audience; We report on picosecond ultrasonic measurements obtained on aluminum and platinum nanostructures with variable dot size and lateral periodicity which realized a 2D phononic crystal. Performing investigations at different resolution scales, we have identified individual modes of vibration depending on the dot size, and mode of vibration strongly correlated with the bi-dimensional organization. The platinum dots sputtered on an aluminum layer have shown a behavior of isolated oscillators without any coupling between neighbor elements in this phononic crystal. The frequency of such normal modes, extracted from time resolved measurements are in good agreement with 3D finite element simulations. In contrast, with aluminum dot systems where the coupling is more efficient we observe a complex spectrum of vibrational modes related to the band structure induced by the bi-dimensional patterning.

Published
2006

45. Band gap tunability of magneto-elastic phononic crystal

Author

Anne-Christine Hladky-Hennion, Pierre A. Deymier, Jean-François Robillard, O. Bou Matar, J. O. Vasseur, Vladimir Preobrazhensky, Philippe Pernod, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), University of Arizona, A. M. Prokhorov General Physics Institute (GPI), and Russian Academy of Sciences [Moscow] (RAS)

Subjects
Materials science, Magnetic structure, Condensed matter physics, Plane wave expansion method, Band gap, General Physics and Astronomy, Magnetostriction, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Magnetic field, Crystal, Condensed Matter::Materials Science, 0103 physical sciences, Condensed Matter::Strongly Correlated Electrons, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 010306 general physics, 0210 nano-technology, Electronic band structure, Spin-½
Abstract

The possibility of control and tuning of the band structures of phononic crystals offered by the introduction of an active magnetoelastic material and the application of an external magnetic field is studied. Two means to obtain large elastic properties variations in magnetoelastic material are considered: Giant magnetostriction and spin reorientation transition effects. A plane wave expansion method is used to calculate the band structures. The magnetoelastic coupling is taken into account through the consideration of an equivalent piezomagnetic material model with elastic, piezomagnetic, and magnetic permeability tensors varying as a function of the amplitude and orientation of the applied magnetic field. Results of contactless tunability of the absolute bandgap are presented for a two-dimensional phononic crystal constituted of Terfenol-D square rod embedded in an epoxy matrix.

Published
2012
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46. Thermal Analysis of Ultimately-Thinned-and-Transfer-Bonded CMOS on Mechanically Flexible Foils

Author

Justine Philippe, Arun Bhaskar, Etienne Okada, Flavie Braud, Jean-Francois Robillard, Francois Danneville, Christine Raynaud, Daniel Gloria, and Emmanuel Dubois

Subjects
CMOS, SOI, thin film, flexible electronics, thermal management, Electrical engineering. Electronics. Nuclear engineering, TK1-9971
Abstract

Thinned CMOS chips transfer-bonded onto a compliant host substrate remain to date the technology of choice for applications requiring both mechanical flexibility and high frequency operation. However, the use of poorly thermally conductive host substrates raises the problem of thermal management of flexible electronics, a topic poorly addressed in literature. In this letter, we report the analysis of flexible SOI-CMOS chips ultimately-thinned-and-transfer-bonded (UTTB) onto polyimide and copper substrates. While the temperature remains limited to ~68°C on the native silicon substrate or after transfer onto a copper host substrate, infrared thermography reveals temperature peaks of up to 118°C on polyimide. The impact of self-heating in flexible SOI-CMOS is correlated with electrical performance for the three types of substrates. Beyond the property of mechanical flexibility it provides, a copper substrate is shown to slightly strengthen electrostatic integrity while maintaining a thermal landscape close to that of silicon.

Published
2019
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48. Développement et caractérisation d’un démonstrateur de générateur thermoélectrique à base de membranes de silicium couplées à de l’ingénierie phononique

Author

Bah, Thierno-Moussa, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université de Lille, Emmanuel Dubois, Jean-François Robillard, Thomas Skotnicki, and Stéphane Monfray

Subjects
Ingénierie phononique, Nano-Fabrication, Semiconductors, Récupération d’énergie, Énergie pour capteurs autonomes, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Abstract

The lack of reliable, safe and low-cost energy source seems to delay the blooming of the internet of things (IoT) and wireless sensors nodes. Thermoelectric harvesters feature those key advantages. Silicon presents the advantages to be most abundant, less environmental harmful and to benefit from facilities and technological processes for low cost thermoelectric harvesters mass production compared to the conventional materials (bismuth telluride alloys). However, silicon is a poor thermoelectric material due to its high thermal conductivity ( ). The possibility to reduce the thermal conductivity while preserving electrical conductivity and Seebeck coefficient is the key to upgrade silicon as an efficient thermoelectric material. To that end, efforts are oriented towards the phononic part of heat transport, which is the dominant contribution in semiconductors. The researches carried out during this thesis dealt with the integration of phonon engineered silicon membranes into thermoelectric harvester demonstrators and their characterizations with respect to the state of the art. The results demonstrated the feasibility of a silicon based thermoelectric harvester exhibiting performance (from few µW/cm2 for ΔT~5-10K to few mW/cm2 for ΔT>100K) sufficient for autonomous sensor nodes’ power supplying and comparable performance with the bismuth telluride state of the art harvester according to the harvesters’ cooling conditions. Moreover, this thesis demonstrated, in addition to the energy harvesting, the possibility of developing silicon based thermoelectric coolers, opening the way to possible integration of thermoelectric coolers in silicon based micro-electronic devices.; L'essor de l'internet des objets (IoT) et des capteurs autonomes et communicants semble être retardé en raison du manque de source d’énergie fiable, sûre et à faible coût. Les récupérateurs d’énergies thermoélectriques présentent ces avantages clés. Le silicium présente les avantages d'être très abondant, moins polluant et de bénéficier d'installations et de procédés technologiques permettant la production en série de récupérateurs d’énergies thermoélectriques à faible coût par rapport aux matériaux conventionnel (alliages de tellure de bismuth). Toutefois, le silicium est un matériau thermoélectrique médiocre en raison de sa conductivité thermique élevée ( ). La possibilité de réduire la conductivité thermique tout en préservant la conductivité électrique et le coefficient Seebeck est la clé pour améliorer le silicium en tant que matériau thermoélectrique efficace. À cette fin, les efforts sont orientés vers la partie phononique du transport de chaleur, qui constitue la contribution dominante dans les semi-conducteurs. Les recherches menées au cours de cette thèse ont porté sur l'intégration des membranes de silicium nanostructurées de réseaux phononiques dans des démonstrateurs de récupérateurs d’énergies thermoélectriques et leur caractérisation au regard de l'état de l’art. Les résultats de ces études ont démontré la faisabilité d’un récupérateur d’énergie thermoélectrique à base de silicium présentant des performances (De quelques µW/cm2 pour ΔT~5-10K à quelques mW/cm2 pour ΔT>100K) suffisantes pour l’alimentation en énergie de nœuds de capteurs autonomes et des performances comparables à celles d’un récupérateur (état de l’art) à base de tellure de bismuth en fonction des conditions de refroidissement de ces derniers. De plus, cette thèse a démontré, outre la récupération d'énergie, la possibilité de développer des refroidisseurs thermoélectriques à base de silicium, ouvrant la voie à une possible intégration de refroidisseurs thermoélectriques dans des dispositifs micro-électroniques à base de silicium.

Published
2019

49. Anisotropie de la conductivité thermique artificiellement induite dans des membranes phononiques en silicium

Author

Didenko, Stanislav, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université de Lille, Emmanuel Dubois, Thomas Skotnicki, and Jean-François Robillard

Subjects
Nano-Fabrication, Silicon low-dimensional nanostructures, Guidage de chaleur dans des nanostructures de silicium, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Abstract

This thesis work is devoted to the development of practical mechanisms for the heat guiding in silicon low-dimensional nanostructures. The motivation comes from both the field of IC thermal management and emerging technology of Si-based thermoelectric devices, where directional heat guiding can play an important role. A series of micrometre-sized thermal characterisation platforms was designed and fabricated. The objective is to study experimentally the feasibility of artificially-induced in-plane anisotropy of effective thermal conductivity (κ) in Si nanopatterned membranes. By the combined use of micro Raman Thermometry, Rigorous Coupled Wave Analysis and Finite Element Modelling (FEM) it was possible to measure the thermal gradient, membrane conductance and determine effective thermal conductivities. This experiment confirms the possibility to induce artificially high anisotropy of κ in Si phononic membranes. Finally, purposefully designed parameterized FEM model demonstrated the possible implementation of the induced anisotropic effects in the area of IC thermal-management.; Ce travail de thèse est consacré au développement de mécanismes pratiques pour le guidage de chaleur dans des nanostructures de silicium de faible dimension. Les applications vont du domaine de la gestion thermique des circuits intégrés aux technologies et matériaux thermoélectriques émergents à base de Si, dans lesquels le guidage thermique de la chaleur peut jouer un rôle important. L'objectif est d'étudier expérimentalement la faisabilité d'une anisotropie de conductivité thermique (κ) dans le plan, induite artificiellement, des membranes nanostructurées en Si. En combinant la thermométrie Raman, la modélisation optique et la modélisation par éléments finis (FEM), il a été possible de mesurer le gradient thermique, la conductance de la membrane et de déterminer les conductivités thermiques effectives. Cette expérience confirme la possibilité d’induire artificiellement une anisotropie élevée de κ dans des membranes en silicium. Un modèle FEM paramétré conçu à dessein a démontré la mise en œuvre possible des effets anisotropes induits dans le domaine de la gestion thermique des circuits intégrés.

Published
2019

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