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The anomalous Hall effect (AHE) is an intriguing transport phenomenon occurring typically in ferromagnets as a consequence of broken time reversal symmetry and spin-orbit interaction. It can be caused by two microscopically distinct mechanisms, namely, by skew or side-jump scattering due to chiral features of the disorder scattering, or by an intrinsic contribution directly linked to the topological properties of the Bloch states. Here we show that the AHE can be artificially engineered in materials in which it is originally absent by combining the effects of symmetry breaking, spin orbit interaction and proximity-induced magnetism. In particular, we find a strikingly large AHE that emerges at the interface between a ferromagnetic manganite (La_(0.7)Sr_(0.3)MnO_3) and a semimetallic iridate (SrIrO_3). It is intrinsic and originates in the proximity-induced magnetism present in the narrow bands of strong spin-orbit coupling material SrIrO_3, which yields values of anomalous Hall conductivity and Hall angle as high as those observed in bulk transition-metal ferromagnets. These results demonstrate the interplay between correlated electron physics and topological phenomena at interfaces between 3d ferromagnets and strong spin-orbit coupling 5d oxides and trace an exciting path towards future topological spintronics at oxide interfaces. The anomalous Hall effect (AHE) occurs in ferromagnets caused by intrinsic and extrinsic mechanisms. Here, Yoo et al. report large anomalous Hall conductivity and Hall angle at the interface between a ferromagnet La_(0.7)Sr_(0.3M)nO_3 and a semimetallic SrIrO_3, due to the interplay between correlated physics and topological phenomena.

The Josephson effect results from the coupling of two superconductors across a spacer such as an insulator, a normal metal or a ferromagnet to yield a phase coherent quantum state. However, in junctions with ferromagnetic spacers, very long-range Josephson effects have remained elusive. Here we demonstrate extremely long-range (micrometric) high-temperature (tens of kelvins) Josephson coupling across the half-metallic manganite La0.7Sr0.3MnO3 combined with the superconducting cuprate YBa2Cu3O7. These planar junctions, in addition to large critical currents, display the hallmarks of Josephson physics, such as critical current oscillations driven by magnetic flux quantization and quantum phase locking effects under microwave excitation (Shapiro steps). The latter display an anomalous doubling of the Josephson frequency predicted by several theories. In addition to its fundamental interest, the marriage between high-temperature, dissipationless quantum coherent transport and full spin polarization brings opportunities for the practical realization of superconducting spintronics, and opens new perspectives for quantum computing. Josephson coupling over micrometres and at tens of kelvins is demonstrated across the half-metallic manganite La0.7Sr0.3MnO3 combined with the superconducting cuprate YBa2Cu3O7.

The persistence of ferroelectricity in ultrathin layers relies critically on screening or compensation of polarization charges which otherwise destabilize the ferroelectric state. At surfaces, charged defects play a crucial role in the screening mechanism triggering novel mixed electrochemical-ferroelectric states. At interfaces, however, the coupling between ferroelectric and electrochemical states has remained unexplored. Here, we make use of the dynamic formation of the oxygen vacancy profile in the nanometer-thick barrier of a ferroelectric tunnel junction to demonstrate the interplay between electrochemical and ferroelectric degrees of freedom at an oxide interface. We fabricate ferroelectric tunnel junctions with a ${\mathrm{La}}_{0.7}{\mathrm{Sr}}_{0.3}{\mathrm{MnO}}_{3}$ bottom electrode and ${\mathrm{BaTiO}}_{3}$ ferroelectric barrier. We use poling strategies to promote the generation and transport of oxygen vacancies at the metallic top electrode. Generated oxygen vacancies control the stability of the ferroelectric polarization and modify its coercive fields. The ferroelectric polarization, in turn, controls the ionization of oxygen vacancies well above the limits of thermodynamic equilibrium, triggering the build up of a Schottky barrier at the interface which can be turned on and off with ferroelectric switching. This interplay between electronic and electrochemical degrees of freedom yields very large values of the electroresistance (more than ${10}^{6}%$ at low temperatures) and enables a controlled switching between clockwise and counterclockwise switching modes in the same junction (and consequently, a change of the sign of the electroresistance). The strong coupling found between electrochemical and electronic degrees of freedom sheds light on the growing debate between resistive and ferroelectric switching in ferroelectric tunnel junctions, and moreover, can be the source of novel concepts in memory devices and neuromorphic computing.

Magnetoelectric coupling in artificial multiferroic interfaces can be drastically affected by the switching of oxygen vacancies and by the inversion of the ferroelectric polarization. Disentangling both effects is of major importance toward exploiting these effects in practical spintronic or spinorbitronic devices. We report on the independent control of ferroelectric and oxygen vacancy switching in multiferroic tunnel junctions with a La_(0.7)Sr_(0.3)MnO_3 bottom electrode, a BaTiO_3 ferroelectric barrier, and a Ni top electrode. We show that the concurrence of interface oxidation and ferroelectric switching allows for the controlled inversion of the interface spin polarization. Moreover, we show the possibility of a spin-memristor where the controlled oxidation of the interface allows for a continuum of memresistance states in the tunneling magnetoresistance. These results signal interesting new avenues toward neuromorphic devices where, as in practical neurons, the electronic response is controlled by electrochemical degrees of freedom.

The peculiar features of domain walls observed in ferroelectrics make them promising active elements for next-generation non-volatile memories, logic gates and energy-harvesting devices. Although extensive research activity has been devoted recently to making full use of this technological potential, concrete realizations of working nanodevices exploiting these functional properties are yet to be demonstrated. Here, we fabricate a multiferroic tunnel junction based on ferromagnetic LaSrMnO electrodes separated by an ultrathin ferroelectric BaTiO tunnel barrier, where a head-to-head domain wall is constrained. An electron gas stabilized by oxygen vacancies is confined within the domain wall, displaying discrete quantum-well energy levels. These states assist resonant electron tunnelling processes across the barrier, leading to strong quantum oscillations of the electrical conductance., Work supported by Spanish MINECO through grants MAT2014-52405-C02-01 and MAT2014-52405-C02-02, MAT2015-066888-C3-1-R, MAT2015-066888-C3-3-R (MINECO/FEDER) and CAM S2013/MIT-2740. Research at ORNL sponsored by the US Department of Energy (DOE), Basic Energy Sciences (BES), M.V. acknowledges support from Fundación BBVA. G.S. and M.C. acknowledge support from ERC Starting Investigator Grant #239739 STEMOX. J.I.B. acknowledges the Spanish Supercomputing Network (RES) and CeSViMa (project FI-2016-2-0006). J.S. thanks Université Paris Saclay (DÁlembert Program) and CNRS for financing his stay at CNRS Thales.

The penetration of a superconducting current from a superconductor into a half-metallic ferromagnet is usually forbidden. Resonances in the conductance spectra of superconductor/half-metal heterostructures suggest this restriction is lifted by the occurrence of unconventional equal-spin Andreev reflection.

In artificial multiferroics hybrids consisting of ferromagnetic La_(0.7)Sr_(0.3)MnO_(3) (LSMO) and ferroelectric BaTiO_(3) epitaxial layers, net Ti moments are found from polarized resonant soft x-ray reflectivity and absorption. The Ti dichroic reflectivity follows the Mn signal during the magnetization reversal, indicating exchange coupling between the Ti and Mn ions. However, the Ti dichroic reflectivity shows stronger temperature dependence than the Mn dichroic signal. Besides a reduced ferromagnetic exchange coupling in the interfacial LSMO layer, this may also be attributed to a weak Ti-Mn exchange coupling that is insufficient to overcome the thermal energy at elevated temperatures.

We report on magnetotransport properties on La_(0.7)Sr_(0.3)MnO_(3)/MgO/Fe tunnel junctions grown epitaxially on top of (001)-oriented SrTiO_(3) substrates by sputtering. It is shown that the magnetoresistive response depends critically on the MgO/Fe interfacial properties. The appearance of an FeOX layer by the interface destroys the 1 symmetry filtering effect of the MgO/Fe system and only a small negative tunneling magnetoresistance (TMR) (∼ −3 %) is measured. However, in annealed samples a switchover from positive TMR (∼ +25% at 70 K) to negative TMR (∼ −1 %) is observed around 120 K. This change is associated with the transition from semiconducting at high T to insulating at low T taking place at the Verwey transition (TV ∼ 120 K) in Fe3O4, thus suggesting the formation of a very thin slab of magnetite at the MgO/Fe interface during annealing treatments. These results highlight the relevance of interfacial properties on the tunneling conduction process and how it can be substantially modified through appropriate interface engineering.

We study the origin of the magnetoelectric coupling in manganite films on ferroelectric substrates. We find large magnetoelectric coupling in LaCaMnO/BaTiO ultra-thin films in experiments based on the converse magnetoelectric effect. The magnetization changes by around 30-40% upon applying electric fields on the order of 1 kV/cm to the BaTiO substrate, corresponding to magnetoelectric coupling constants on the order of α = (2-5)·10 s/m. Magnetic anisotropy is also affected by the electric field induced strain, resulting in a considerable reduction of coercive fields. We compare the magnetoelectric effect in pre-poled and unpoled BaTiO substrates. Polarized neutron reflectometry reveals a two-layer behavior with a depressed magnetic layer of around 30 Å at the interface. Magnetic force microscopy (MFM) shows a granular magnetic structure of the LaCaMnO. The magnetic granularity of the LaCaMnO film and the robust magnetoelastic coupling at the LaCaMnO/BaTiO interface are at the origin of the large magnetoelectric coupling, which is enhanced by phase separation in the manganite., The authors acknowledge financial support from the Spanish MICINN and MINECO through grants MAT2011-27470-C02-01, MAT2011-27470-C02-02, MAT2014-52405-C2-2-R, MAT2014-52405-C2-1R and CSD-2009-00013.

At interfaces between complex oxides, electronic, orbital and magnetic reconstructions may produce states of matter absent from the materials involved, offering novel possibilities for electronic and spintronic devices. Here we show that magnetic reconstruction has a strong influence on the interfacial spin selectivity, a key parameter controlling spin transport in magnetic tunnel junctions. In epitaxial heterostructures combining layers of antiferromagnetic LaFeO(3) (LFO) and ferromagnetic La(0.7)Sr(0.3)MnO(3) (LSMO), we find that a net magnetic moment is induced in the first few unit planes of LFO near the interface with LSMO. Using X-ray photoemission electron microscopy, we show that the ferromagnetic domain structure of the manganite electrodes is imprinted into the antiferromagnetic tunnel barrier, endowing it with spin selectivity. Finally, we find that the spin arrangement resulting from coexisting ferromagnetic and antiferromagnetic interactions strongly influences the tunnel magnetoresistance of LSMO/LFO/LSMO junctions through competing spin-polarization and spin-filtering effects.

Controlling magnetic anisotropy is an important objective towards engineering novel magnetic device concepts in oxide electronics. In thin film manganites, magnetic anisotropy is weak and it is primarily determined by the substrate, through induced structural distortions resulting from epitaxial mismatch strain. On the other hand, in cobaltites, with a stronger spin orbit interaction, magnetic anisotropy is typically much stronger. In this paper, we show that interfacing LaSrMnO (LSMO) with an ultrathin LaCoO (LCO) layer drastically modifies the magnetic anisotropy of the manganite, making it independent of the substrate and closer to the magnetic isotropy characterizing its rhombohedral structure. Ferromagnetic resonance measurements evidence a tendency of manganite magnetic moments to point out-of-plane suggesting non collinear magnetic interactions at the interface. These results may be of interest for the design of oxide interfaces with tailored magnetic structures for new oxide devices., Work at UCM supported by Spanish MINECO through Grant Nos. MAT2014-52405-C02-01 and MAT2014-52405-C02-02 and by CAM through Grant No. CAM S2013/MIT-2740. M.V. and M.C. acknowledge support from Fundación BBVA and from MINECO through Grant No. MAT2015-066888-C3-3-R. J.S. thanks the University Paris-Saclay (D’Alembert program) and CNRS for financing his stay at CNRS/Thales. T.F. acknowledges support from the Hungarian Research Fund OTKA No. K107228.

We report on the fabrication and magnetotransport characterization of hybrid graphene-based nanodevices with epitaxial nanopatterned La_(0.7)Sr_(0.3)MnO_(3) manganite electrodes grown on SrTiO_(3)(100). The few-layer graphene was deposited onto the predefined manganite nanowires by using a mechanical transfer technique. These nanodevices exhibit resistive switching and hysteretic transport as measured by current-voltage curves. The resistance can be reversibly switched between high and low states, yielding a consistent non-volatile memory response. The effect is discussed in terms of changes in the concentration of oxygen vacancies at the space charge region of the Schottky barriers building at the contacts.

Here we study the electronic properties of cuprate/manganite interfaces. By means of atomic resolution electron microscopy and spectroscopy, we produce a subnanometer scale map of the transition metal oxidation state profile across the interface between the high $T_c$ superconductor YBa$_2$Cu$_3$O$_{7-\delta}$ and the colossal magnetoresistance compound (La,Ca)MnO$_3$. A net transfer of electrons from manganite to cuprate with a peculiar non-monotonic charge profile is observed. Model calculations rationalize the profile in terms of the competition between standard charge transfer tendencies (due to band mismatch), strong chemical bonding effects across the interface, and Cu substitution into the Mn lattice, with different characteristic length scales., Comment: 11+7 pages, 3+2 figures

The magnetism of La0.7Ca0.3MnO3 (LCMO) epitaxial thin films grown on SrTiO3 (STO) and BaTiO3 (BTO) substrates is studied using polarized neutron reflectometry (PNR) and ferromagnetic resonance (FMR) techniques. In LCMO/BTO, PNR reveals a strongly suppressed magnetization of 300 kA/m, equivalent to a magnetic moment of 2 μB/Mn, throughout the LCMO layer, amounting to half the expected value. The largest suppression occurs near the interface with BTO, with magnetization values of 50 kA/m, equivalent to 0.3 μB/Mn. FMR is observable at 8.9 GHz only around the [110] crystallographic direction in thin LCMO/BTO. The resonance barely shifts as the applied field is rotated away from [110]. The FMR results are analyzed in terms of magnetoelastic anisotropy and compared to LCMO/STO grown under the same conditions. A two-layer magnetization model is proposed, based on strong out-of-plane anisotropy near the BTO interface and shown to qualitatively explain the main characteristics of the FMR results.

In this paper, we explore the interfacial effects appearing in highly strained La0.7Ca0.3MnO3 (LCMO) ultra-thin films (10-12nm) grown on BaTiO3 (BTO) ferroelectric substrates. The strong tendency to phase separation of this optimally doped manganite contributes to the exotic phenomena observed in magnetism and transport experiments: the so-called Matteucci magnetic loops, magnetic granularity and a second metal insulator transition are observed between 50K and the LCMO Curie temperature, 180K. All these properties define the multiferroic character of these heterostructures, which in LCMO//BTO system is strongly linked to magnetoelastic coupling.

La0.7Ca0.3MnO3 optimally doped epitaxial films were grown on ferroelectric BaTiO3 substrates. Electronic transport (magnetoresistance and electroresistance) and magnetic properties showed important anomalies in the temperature interval between 60 and 150 K, below the metal-insulator transition. Scanning probe microscopy revealed changes in BaTiO3 surface morphology at those temperatures. La0.7Ca0.3MnO3 thickness is a critical factor: 120-angstrom -thick films showed large anomalies sensitive to electric poling of the BaTiO3, whereas the behavior of 150-angstrom -thick films is closer to that of the reference La0.7Ca0.3MnO3 samples grown on SrTiO3. We propose that, through inhomogenous strain and electric polarization effects, the ferroelectric substrate induces an inhomogenous spin distribution in the magnetic layer. This would imply the coexistence of in-plane and out-of-plane ferromagnetic patches in La0.7Ca0.3MnO3, possibly interspersed with antiferromagnetic regions, as it has recently been theoretically predicted. Substrate poling effects are investigated, and a magnetoelectric coupling is demonstrated.

An unusual conducting surface state can be produced in SrTiO3 substrates by irradiation with Argon ions from a plasma source, at low energy and high doses. The effects of irradiation are analyzed here by atomic force microscopy (AFM) and aberration corrected scanning transmission electron microscopy (STEM) combined with electron energy loss spectroscopy (EELS). Depth sensitive studies demonstrate the existence of a heavily damaged surface layer and an oxygen vacancy rich layer immediately underneath, both induced during the irradiation process. We find a clear dependence of the Ti oxidation state with the depth, with a very intense Ti 3 þ component near the surface. Oxygen vacancies act as n-type doping by releasing electrons into the lattice and producing an insulator-to-metal transition, which explains the unusual metallic behavior of these samples. Published by Elsevier B.V.

et al., We examine the anomalous inverse spin switch behavior in La 0.7Ca 0.3MnO 3(LCMO)/YBa 2Cu 3O 7-δ (YBCO)/LCMO trilayers by combined transport studies and polarized neutron reflectometry. Measuring magnetization profiles and magnetoresistance in an in-plane rotating magnetic field, we prove that, contrary to many accepted theoretical scenarios, the relative orientation between the two LCMO's magnetizations is not sufficient to determine the magnetoresistance. Rather the field dependence of magnetoresistance is explained by the interplay between the applied magnetic field and the (exponential tail of the) induced exchange field in YBCO, the latter originating from the electronic reconstruction at the LCMO/YBCO interfaces. © 2012 American Physical Society., Research at Argonne National Laboratory was supported by the U. S. Department of Energy (DOE), Office of Basic Energy Sciences, Division of Materials Sciences and Engineering under Grant No. DE-AC02-06CH11357. Work at UCM was supported by Spanish MICINN Grant No. MAT 2011 27470, Consolider Ingenio CSD2009-00013 (IMAGINE), CAM S2009-MAT 1756 (PHAMA). This work has benefited from the use of the Lujan Neutron Scattering Center at LANSCE, which is funded by the U. S. Department of Energy’s Office of Basic Energy Sciences. Los Alamos National Laboratory is operated by Los Alamos National Security LLC under DOE through Contract No. DE-AC52-06NA25396

We report the observation between 40 and 120 K of anomalous magnetic hysteresis loops in thin epitaxial films of La_(0.7)Ca_(0.3)MnO_(3) grown on ferroelectric BaTiO_(3). These hysteresis loops display extremely unusual features: after switching at coercivity, the magnetization overshoots the eventual high-field value. We study the strains in the film and substrate with x-ray diffraction and propose a model of two magnetic moment populations with different magnetoelastic anisotropies. The relative weights of both populations can be estimated by comparison with twin samples of La_(0.7)Ca_(0.3)MnO_(3) films on nonferroelectric SrTiO_(3). We propose that the observed magnetization overshoots the result from differences in the magnetostriction balance as the applied magnetic field increases. The picture of a nonuniform strain field in La_(0.7)Ca_(0.3)MnO_(3) on BaTiO_(3), caused by the corrugation of the ferroelectric domains in the rhombohedric phase of BaTiO_(3), is compatible with the magnetic granular behavior observed in the temperature and field dependences of the magnetization as well as in the low temperature magnetoresistance exhibited by the epitaxial film.

Metallic surface layers are fabricated by doping (100) SrTiO_3 (STO) single crystals with oxygen vacancies generated by bombardment with Ar ions from an rf plasma source. The presence of oxygen vacancies is confirmed by cathodoluminescence and x-ray photoemission spectroscopy. This technique produces a surface electron gas with high values of the sheet carrier density (n_(2D) = 2.45x10^17 cm^(-2)). A strong increase (300%) of the low-temperature magnetoresistance is observed when the magnetic field is rotated away from the surface, characteristic of orbital effects of confined electrons. We estimate the width of the confinement region to be in the 200-300 nm range. When a magnetic field is applied in the surface plane and parallel to the current direction, a large negative magnetoresistance is found below the structural transition of the STO, which is discussed in terms of spin-orbit scattering. On further reduction of temperature, there is a change to a positive magnetoresistance regime due to the scattering of charge carriers at the disordered surface region.