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Einleitung: Nachdem anfängliche Zweifel an der onkologischen Sicherheit durch aktuelle Studien ausgeräumt werden konnten, wird die robotische Zystektomie mit intrakorporaler Harnableitung zunehmend auch in Deutschland von spezialisierten Zentren angeboten. Als besondere Herausforderung an [zum vollständigen Text gelangen Sie über die oben angegebene URL], 65. Kongress der Nordrhein-Westfälischen Gesellschaft für Urologie

Ziel: Die Detektionsraten der elastographiegesteuerte Prostatabiopsien mit den randomisierten 12-24x biopsien zu vergleichen, insbesondere bzgl. der klinisch signifikanten Prostatakarzinome bei primären und Re-Biopsien. Methoden: Bei insgesamt 176 Patienten wurden zunächst von elastographisch[zum vollständigen Text gelangen Sie über die oben angegebene URL], 62. Kongress der Nordrhein-Westfälischen Gesellschaft für Urologie

27th European Photovoltaic Solar Energy Conference and Exhibition; 185-188, The purpose of this work was the formation of highly conductive and low cost copper contacts on shallow and thus optically thin p-n junctions (

26th European Photovoltaic Solar Energy Conference and Exhibition; 1791-1795, Laser edge isolation of solar cells has to be improved in order to increase solar cell efficiency. Long nanosecond laser pulses are usually applied for laser edge isolation in industry. However, stable solid state lasers which emit ultrashort pulses are now available and allow much more precise damage-free groove fabrication. Femtosecond UV (=343 nm) pulses are applied in this work and show great potential for fabricating grooves without any successive chemical treatment.

26th European Photovoltaic Solar Energy Conference and Exhibition; 1757-1761, In a last few years the field of silicon photovoltaics has seen an increasing number of applications of microelectronic techniques, such as ion implantation and salicide (self-aligned silicide) processes for contact formation. It is well known that conventional screen printed emitter contacts have severe limitations in terms of high surface doping concentration required and a deep junction in order to exhibit good contact resistance and avoid shunting. The purpose of this work was to form nickel silicide contacts in an industrially feasible way on shallow and hence optically thin pn junctions (

25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion, 6-10 September 2010, Valencia, Spain; 2094-2098, Low cost and high efficiency are the keys to reducing the cost of photovoltaic electricity. To realize high efficiency, the quality of emitter is critical. In this paper we report on the study of different emitter formation, fabricated on solar grade silicon, suitable for new solar cells manufacturing process. Laser ablation of a passivation layer is a key factor to preserve the quality of the emitter before the contact formation. Emitter formation is settled in order to produce lower cost high efficiency solar cells processed on large area using techniques scalable to industry. The work has been focused on the combination of different emitter formation. Starting from standard POCL3 emitter formation considered as reference, a spin-on dopant (SOD) with different phosphorous concentration has been used to obtain the most suitable configuration for the emitter in conjunction with a good front ohmic contact formation, using NI-Cu (ablating ,by laser, a passivation layer) and back contact collection realized via laser fired contact. All the different diffused profiles has been analyzed and characterized to assure the right choice. Starting from phosphorous spin-on sources an appropriate doping profile, in an open tube, has been identified in such a way to have both: a good contac formation, realized via laser ablation of an antireflection coating and passivation layer realized on emitter side, and an effective light absorption. The obtained diffusion profile coupled with an antireflection and passivation layer, formed by a combination of silicon nitride and amorphous silicon at low temperature, has given a value of Voc over 620 mV.

23rd European Photovoltaic Solar Energy Conference and Exhibition, 1-5 September 2008, Valencia, Spain; 1383-1387, Selective emitter structures are more effective in terms of solar cell efficiency. In this paper the optimization of the selective n/n+ and single step n+ emitters together with Ti:Pd:Ag and Ni:Cu metal grid was performed. Single step and selective emitters were also compared when the base recombination mechanisms are taken into account. It was shown that even with lower minority charge carrier lifetimes the selective emitter performance is superior to the n+.

23rd European Photovoltaic Solar Energy Conference and Exhibition, 1-5 September 2008, Valencia, Spain; 1357-1359, Conditions for the effective phosphorus diffusion through the spun-on sol-gel layers were investigated and the results are presented in this work. The n+ areas were doped to obtain sheet resistance as low as 10-20Ω/sq, and surface resistance of n area which was created underneath the barrier layer was in the interval 100-3000Ω/sq with respect to diffusion temperature, barrier material and thickness.