Phosphorus Diffusion Through Spun-On and PECVD Dielectric Layers

Authors :: Juverdeanu, P.
Janusonis, J.
Izzi, M.
Bukauskas, V.
Serenelli, L.
Ulbikas, J.
Galdikas, A.
Janusoniene, V.
Publication Year :: 2008
Publisher :: WIP-Munich, 2008.
Abstract: 23rd European Photovoltaic Solar Energy Conference and Exhibition, 1-5 September 2008, Valencia, Spain; 1357-1359<br />Conditions for the effective phosphorus diffusion through the spun-on sol-gel layers were investigated and the results are presented in this work. The n+ areas were doped to obtain sheet resistance as low as 10-20Ω/sq, and surface resistance of n area which was created underneath the barrier layer was in the interval 100-3000Ω/sq with respect to diffusion temperature, barrier material and thickness.