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Prototype special-purpose charge-coupled device (CCD) designed to detect two 1,024 x 1,024-pixel images in rapid succession. Readout performed slowly to minimize noise. CCD operated in synchronism with pulsed laser, stroboscope, or other pulsed source of light to form pairs of images of rapidly moving objects.

Seven new CCDs are presented. The devices will be used in a variety of applications ranging

Silicon-based charge-coupled device (CCD) using thin layer on poly-crystaline silicon developed to enhance sensitivity to ultraviolet and soft x-ray photons. In developmental thin-gate CCD, width of first three layers reduced in size so that they only cover fraction of pixel, allowing photons to enter fourth poly layer unimpeded.

A new antiblooming technique was used to collect images for a BL Lac monitoring project. The antiblooming was accomplished by clocking two of the collection phases (in a three-phase chip) back and forth during the integration of an image. Calibrations were done using VRI standard stars to insure that the technique did not affect normal photon collection and photometric data. New sources of noise were identified which must be subtracted from the processed imaging. In contrast, the technique reduced dark current noise, which is of benefit with a thermoelectric-cooled camera. The technique eliminated blooming across the stars of interest, while preserving photon-collection efficiency. It also reduced the total noise of the exposures.

Special purpose CCD designed for ultra low-noise imaging and spectroscopy applications that require subelectron read noise floors, wherein a non-destructive output circuit operating near its 1/f noise regime is clocked in a special manner to read a single pixel multiple times. Off-chip electronics average the multiple values, reducing the random noise by the square-root of the number of samples taken. Noise floors below 0.5 electrons rms are possible in this manner. In a preferred embodiment of the invention, a three-phase CCD horizontal register is used to bring a pixel charge packet to an input gate adjacent a floating gate amplifier. The charge is then repeatedly clocked back and forth between the input gate and the floating gate. Each time the charge is injected into the potential well of the floating gate, it is sensed non-destructively. The floating gate amplifier is provided with a reference voltage of a fixed value and a pre-charge gate for resetting the amplifier between charge samples to a constant gain. After the charge is repeatedly sampled a selected number of times, it is transferred by means of output gates, back into the horizontal register, where it is clocked in a conventional manner to a diffusion MOSFET amplifier. It can then be either sampled (destructively) one more time or otherwise discarded.

Acceptable quantum efficiency obtained without back illumination and back-side thinning. NEW CCD technology referred to as "open-pinned-phase" (OPP) invented to unite best attributes of multiphase and virtual-phase technologies. Delivers high front-side sensitivity in conjunction with ultralow-signal-level performance.

A front-illuminated CCD of relative high quantum efficiency (QE) and high charge transfer efficiency (CTE) utilizes an open-phase region for receiving photons and two-phase gate regions (.phi..sub.1 and .phi..sub.2) for transferring electrons collected in one pixel to the next. The open-phase region is implanted with additional n-type elements (phosphorus) in order to increase the potential of the CCD channel in the open-phase region for collection of electrons and additionally implanted with concentrated and very shallow p-type elements (boron) to pin the surface of the n-channel in the open-phase region to OV, while gate region .phi..sub.1 and .phi..sub.2 are biased to -3.5V and driven to +10V by a two-phase transfer clock. The open pinned-phase (OPP) region thus permits two-phase transfer clocking and optimum reception of photons during the integration periods between transfer clock pulses.

Same quantity measured many times to reduce uncertainty. "Skipper" charge-coupled device (CCD) underlines development of new class of imaging detectors exhibiting exceptionally low readout noise. Operates on nondestructive-readout scheme combined with other advances in CCD technology to reduce average readout noise to less than 1 electron rms. Concept has potential for improving video images made at ultra-low light levels, involving only few incoming photons per picture element (pixel).

A backside illuminated CCD imaging sensor for reading out image charges from wells of the array of pixels is significantly improved for blue, UV, far UV and low energy x-ray wavelengths (1-5000.ANG.) by so overthinning the backside as to place the depletion edge at the surface and depositing a thin transparent metal film of about 10.ANG. on a native-quality oxide film of less than about 30.ANG. grown on the thinned backside. The metal is selected to have a higher work function than that of the semiconductor to so bend the energy bands (at the interface of the semiconductor material and the oxide film) as to eliminate wells that would otherwise trap minority carriers. A bias voltage may be applied to extend the frontside depletion edge to the interface of the semiconductor material with the oxide film in the event there is not sufficient thinning. This metal film (flash gate), which improves and stabilizes the quantum efficiency of a CCD imaging sensor, will also improve the QE of any p-n junction photodetector.

Multi-pinned-phase (MPP) technology allows charge-coupled device (CCD) to operate totally inverted during both integration and readout while maintaining other performance characteristics. MPP-CCD made with positive doping implants defining barrier phases. When all phases biased together into inversion, dark current reduced, and potential of charge-collecting wells is difference between potentials of barrier and collection phases. Advantages include complete elimination of residual image effects during integration and readout, low pixel nonuniformity, and increase in quantum efficiency in near infrared because higher operating temperatures used. More tolerant to ionizing radiation environments.

The characteristics of a quadrant-CCD designed for pointing and tracking are discussed with reference to its use in an adaptive optics program. The quadrant-CCD is used to correct stellar image motion proceeding from atmospheric turbulence by means of a system in which a sensor measures the image offset and sends data to a high-speed tip/tilt mirror. The design and control of the device are detailed, including four 100-micron-square pixels, the quadrant architecture, controller electronics, and data acquisition computer and interface. The transfer function is set forth in the x and y directions, and transfer curves are shown. A laboratory simulation of random image motion was conducted to evaluate the performance of the quadrant-CCD as an image motion sensor, and the experimental results are presented. The suitability of the quadrant-CCD for space-based pointing and tracking uses is demonstrated by this test and two earlier theoretical studies. Some future developments which improve performance capabilities are mentioned.

This paper reports on two new advancements in CCD technology. The first area of development has produced a special purpose CCD designed for ultra low-signal level imaging and spectroscopy applications that require sub-electron read noise floors. A nondestructive output circuit operating near its 1/f noise regime is clocked in a special manner to read a single pixel multiple times. Off-chip electronics average the multiple values, reducing the random noise by the square-root of the number of samples taken. Noise floors below 0.5 electrons rms are reported. The second development involves the design and performance of a high resolution imager of 4096 x 4096 pixels, the largest CCD manufactured in terms of pixel count. The device utilizes a 7.5-micron pixel fabricated with three-level poly-silicon to achieve high yield.

A charge coupled device designed for celestial spectroscopy has achieved readout noise as low as 0.6 electrons rms. A nondestructive output circuit was operated in a special manner to read a single pixel multiple times. Off-chip electronics averaged the multiple values, reducing the random noise by the square root of the number of readouts. Charge capacity was measured to be 500,000 electrons. The device format is 1600 pixels horizontal by 64 pixels vertical. Pixel size is 28 microns square. Two output circuits are located at opposite ends of the 1600 bit CCD register. The device was thinned and operated backside illuminated at -110 degrees C. Output circuit design, layout, and operation are described. Presented data includes the photon transfer curve, noise histograms, and bar-target images down to 3 electrons signal. The test electronics are described, and future improvements are discussed.

Charge-coupled photodetector optimized for maximum quantum efficiency (QE), high charge-collection efficiency, and ultralow read noise. Called "flash-coupled" photodetector, sensor delivers high quantum-efficiency sensitivity in spectral range extending from soft x ray to near infrared.

A method to significantly increase the quantum efficiency (QE) of a CCD (or similar photosensor) applied in the UV, far UV and low energy x-ray regions of the spectrum. The increase in QE is accomplished by overthinning the backside of a CCD substrate beyond the epitaxial interface and UV flooding the sensor prior to use. The UV light photoemits electrons to the thinned surface and charges the backside negatively. This in turn forms an accumulation layer of holes near the Si-SiO.sub.2 interface creating an electric field gradient in the silicon which directs the photogenerated signal to the frontside where they are collected in pixel locations and later transferred. An oxide film, in which the backside charge resides, must have quality equivalent to a well aged native oxide which typically takes several years to form under ambient conditions. To reduce the amount of time in growing an oxide of sufficient quality, a process has been developed to grow an oxide by using deionized steam at 95.degree. C. which takes less than one hour to grow.

Thin layer of platinum or other high-work-function metal applied to back side of rear-illuminated charge-coupled device (CCD) achieves quantum efficiency (QE)-pinned state, an ideal condition allowing sensor to achieve 100-percent internal charge-collection efficiency within its photosensitive volume. Metal layer, called flash gate, easily applied by tungsten vacuum deposition during last step of sensor fabrication.

A development status evaluation is presented for proprietary UV-range CCDs for military and scientific applications requiring pixel sizes in the 18-micron range. The most recent developments in UV/X-ray responsive detectors have their bases in the backside illumination of multipinned phase (MPP) 1024 x 1024 CCD arrays, as well as in the initial exploration of open-pinned phase (OPP) techniques. The frontside performance of both MPP and OPP devices is noted to be excellent as well, and pinouts and mounting techniques have been defined which allow easy front-back operation comparisons. Novel backside processing techniques are being refined.

A method for promoting quantum efficiency (QE) of a CCD imaging sensor for UV, far UV and low energy x-ray wavelengths by overthinning the back side beyond the interface between the substrate and the photosensitive semiconductor material, and flooding the back side with UV prior to using the sensor for imaging. This UV flooding promotes an accumulation layer of positive states in the oxide film over the thinned sensor to greatly increase QE for either frontside or backside illumination. A permanent or semipermanent image (analog information) may be stored in a frontside SiO.sub.2 layer over the photosensitive semiconductor material using implanted ions for a permanent storage and intense photon radiation for a semipermanent storage. To read out this stored information, the gate potential of the CCD is biased more negative than that used for normal imaging, and excess charge current thus produced through the oxide is integrated in the pixel wells for subsequent readout by charge transfer from well to well in the usual manner.

Photovoltaic device senses hydrogen developed to test degradation of diodes with platinum flash gates on backs. Sensing element is p/n junction rather than conventional Schottky barrier or metal oxide/silicon field-effect transistor. Hydrogen-indicating electrical signal modulated optically rather than electrically. Layered structure of hydrogen detector and principle of operation resemble silicon solar photovoltaic cell. Hydrogen detector responds to hydrogen in atmosphere within minutes and recovers quickly when hydrogen removed.

A backside illuminated CCD imaging sensor for reading out image charges from wells of the array of pixels is significantly improved for blue, UV, far UV and low energy x-ray wavelengths (1-5000.ANG.) by so overthinning the backside as to place the depletion edge at the surface and depositing a thin transparent metal film of about 10.ANG. on a native-quality oxide film of less than about 30.ANG. grown on the thinned backside. The metal is selected to have a higher work function than that of the semiconductor to so bend the energy bands (at the interface of the semiconductor material and the oxide film) as to eliminate wells that would otherwise trap minority carriers. A bias voltage may be applied to extend the frontside depletion edge to the interface of the semiconductor material with the oxide film in the event there is not sufficient thinning. This metal film (flash gate), which improves and stabilizes the quantum efficiency of a CCD imaging sensor, will also improve the QE of any p-n junction photodetector.

This paper presents an updated version of a previous paper describing a three-phase 800 x 800 charge-coupled-device image sensor. Although this device was originally designed to be used as the sensor for the Wide Field/Planetary Camera on the Hubble Space Telescope, it is now being used as the detector of choice on many ground-based telescopes. The performance of the device is reviewed, and the important contributions it has made to the understanding of general CCD performance is indicated.

The introduction of the flash gate has made possible the fabrication of backside-illuminated CCDs with high sensitivity and stability throughout a wide range of ultraviolet and visible wavelengths (100 to 5000 A). It had been determined previously that the characteristics of the oxide layer beneath the gate are critical to the ultimate achievable CCD performance. However, by creating an improved oxide layer in conjunction with the flash gate, it is now possible to consistently produce CCDs with near-ideal UV performance. In this paper recent results and related background theory that optimize the flash gate specifically for application in the UV are presented.

The performance requirements for scientific-quality CCDs are discussed, focusing on the design of two devices, and the progress toward achieving the desired performance is discussed. These devices are intended for rear-illuminated applications and have 512 x 512 and 2048 x 2048 pixel formats. The thinned 10 to 20 micron thick Si membrane is fully supported by a unique glass ceramic substrate. Quantum efficiencies of greater than 70 percent at 700 nm and greater than 40 percent at wavelengths less than 400 nm have been measured on a test device. Dark currents as low as 6 pA/sq cm also have been measured recently.

The charge-coupled device dominates an ever-increasing variety of scientific imaging and spectroscopy applications. Recent experience indicates, however, that the full potential of CCD performance lies well beyond that realized in devices currently available.Test data suggest that major improvements are feasible in spectral response, charge collection, charge transfer, and readout noise. These properties, their measurement in existing CCDs, and their potential for future improvement are discussed in this paper.

Recent developments of backside treatment for the backside-illuminated scientifc CCD imagers have shown near-theoretical efficiency even at the short wavelength region of the spectrum. By using SEM performance comparisons of backside-treated and untreated CCDs to an electron flux varying from 1 to 100 pA and beam energy ranging from less than 1 keV up to 20 keV are obtained. The theoretical analysis, the SEM testing procedure, and the quantum efficiency measurement results are presented. It is shown, for example, that the average quantum efficiency increases from less than 1 percent for an untreated CCD to nearly 40 percent for a backside-treated CCD at a beam energy of 1 kev.

CCD memory device yields over 6.4 x 10 to the eighth power levels of information on single chip. Charge-coupled device (CCD) demonstrated to operate as either read-only-memory (ROM) or photon-programmable memory with capacity of 640,000 bits, with each bit capable of being weighted to more than 1,000 discrete analog levels. Larger memory capacities now possible using proposed approach in conjunction with CCD's now being fabricated, which yield over 4 x 10 to the ninth power discrete levels of information on single chip.

A sensor is described for detecting the difference in phase of a pair of returned light pulse components, such as the two components of a light pulse of an optical gyro. In an optic gyro, the two light components have passed in opposite directions through a coil of optical fiber, with the difference in phase of the returned light components determining the intensity of light shining on the sensor. The sensor includes a CCD (charge coupled device) that receives the pair of returned light components to generate a charge proportional to the number of photons in the received light. The amount of the charge represents the phase difference between the two light components. At a time after the transmission of the light pulse and before the expected time of arrival of the interfering light components, charge accumulating in the CCD as a result of reflections from optical components in the system, are repeatedly removed from the CCD, by transferring out charges in the CCD and dumping these charges.

New diagnostic tool used to understand performance and failures of microelectronic devices. Microscope integrated to low-noise charge-coupled-device (CCD) camera to produce new instrument for analyzing performance and failures of microelectronics devices that emit infrared light during operation. CCD camera also used to indentify very clearly parts that have failed where luminescence typically found.