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Międzysłowiański jest sztucznym językiem pomostowym, opartym na wspólnych elementach języków słowiańskich. Głównym jego celem jest maksymalna zrozumiałość dla Słowian bez żadnej uprzedniej nauki. W dobie globalizacji i masowej turystyki język międzysłowiański otwiera nowe perspektywy dla komunikacji międzynarodowej w Europie Środkowo-Wschodniej. Region ten składa się z wielu, przeważnie małych państw, a niemal każde z nich ma swój własny, mało znany poza własnym terytorium język. Znajomość języka angielskiego i innych języków obcych jest wciąż na niskim poziomie, a wielojęzyczność bierna możliwa jest tylko w ograniczonym zakresie. Ze względu na swój wysoki stopień zrozumiałości wśród Słowian, międzysłowiański stanowi idealną alternatywę w komunikacji jednokierunkowej, np. w przewodnikach, broszurach, ulotkach i na stronach internetowych.

This article brings the idea of improving the quality of information systems to support democracy and public administration in Slavic countries between Western Europe and Russia through the use of a zonal constructed language that can successfully replace English and improve the overall quality of ICT used for e-Democracy assignments. The connection with education, from which everything begins, is also emphasised. This article describes the results of public research in the form of surveys and the first practical experiences of the authors. The idea of improving computer translations between national languages is also mentioned. It is assumed that language, education and e-democracy create a developing triad. Finally, this article describes the future development of this idea.

The quality of information systems to support democracy and public administration in the Slavic countries between Western Europe and Russia can be improved through the use of Interslavic, a zonal constructed language that can successfully replace English as a regional lingua franca, enhance participation and improve the overall quality of ICT used for e-Democracy assignments. Its potential role in improving computer translation between fusional languages with free word order by means of graph-based translation is discussed as well. This paper gives an overview of the pros and cons of various language options and describes the results of public research in the form of surveys, as well as the practical experiences of the authors. Special emphasis is given to the crucial role played by education: it is assumed that language, e-democracy, and education form a triangle of three inseparable, interdependent entities. Finally, the paper describes how these ideas can be developed in the future.

The Si transistor has dominated the semiconductor industry for decades. However, to fulfill the demands of Moore’s law, the Si transistor has been pushed to its physical limits. Introducing new materials with higher intrinsic carrier mobility is one way to solve this problem. Ge, GaAs and InGaAs are known for their high mobilities and are therefore suitable candidates for replacing Si as a channel material. However, introduction of new materials raises new issues. For Si processing, several steps such as cleaning, etching and stripping are based on wet treatments. The knowledge of etch rates of the semiconductor material is of great importance. In this paper, etch rates of Ge, GaAs and InGaAs in several chemical solutions are studied. A comparison of the etch rates is made between the materials.

Si has dominated semiconductor industry for decades. However, new materials are appearing in this field such as Ge, GaAs and InxGa1-xAs. In semiconductor processing several wet chemical steps are used including cleaning, etching and stripping. Knowledge of etch rates in these solutions is of great importance. In this paper, an etch rate study was performed for Ge, GaAs and InxGa1-xAs in several wet chemical cleaning solutions. The chemistries studied include acids (HCl, HF, HNO3, H2SO4, H3PO4, H2O2) and bases (NH4OH) and peroxide based mixtures. It has been found that etch rates are much higher than for Si due to the formation of soluble oxides. Therefore, "fine-tuning" of the chemistries is a prerequiste when introducing these materials in microelectronic industry.

Contact hole patterns are becoming one of the most challenging lithographic process for 45nm node and below. In this study, we first screen some 193nm resist formulations to achieve 80nm contact holes with a DOF superior to 250nm for dense pitches, 150nm for isolated with immersion lithography and focus scan option. In addition to this process window requirement, we also consider the MEEF behaviour of these resist samples as a function of the lithographic process. We encountered a trade-off between DOF performance and MEEF. With our best sample, large DOF is promoted by focus scan and photoacid diffusion whereas it strongly affects the MEEF value. Process tricks which tend to enhance chemical contrast within the resist, such as overbaking PEB and double PEB step have thus been applied. First results are interesting though these process variations do not allow fully compensating the image blur induce by the focus scan.

We have selectively grown thin epitaxial GaAs films on Ge substrates with the aid of a 200 nm thin SiO2 mask layer. The selectively grown structures have lateral sizes ranging from 1 um width up to large areas of 1 by 1 mm2. The growth with the standard growth procedure for GaAs growth on Ge substrates reveals a limited amount of GaAs nucleation on the mask area and strong loading effects caused by diffusion of group III precursors over the mask area and in the gas phase. Reduction of the growth pressure inhibits GaAs nucleation on the mask area and reduces the loading effects strongly, but favors the creation of anti phase domains in the GaAs. An optimized growth procedure was developed, consisting of a 13 nm thin nucleation layer grown at high pressure, followed by low pressure growth of GaAs. This optimized growth procedure inhibits the nucleation of GaAs on the mask area and is a good compromise between reduction of loading effects and inhibition of anti phase domain growth in the GaAs. X-ray diffraction and photoluminescence measurements demonstrate the good microscopic characteristics of the selectively grown layers., Comment: 14 pages, 8 figures

We are reporting on a growth procedure for selective growth of GaAs on Ge substrates by organometallic vapor phase deposition. The precursors used for the growth are Tertiarybutylarsine (TBAs) and Trimethylgallium (TMGa). As a mask material 200 nm thick polycrystalline SiO2 was deposited on a 6° miscut Ge(001) substrate. The patterns available on the mask are various structures with feature sizes ranging from a fraction of a micron to a mm square. The filling factor of the mask, defined by the ratio of open area on the substrate to the area covered by SiO2, is approximately 2⁄3. This means that most of the wafer is covered with SiO2, making loading effects due to enhanced concentration of growth species at the mask openings very apparent. The most critical processing step during the selective growth of GaAs on Ge is the growth of the nucleation layer. This nucleation layer needs to be grown at high pressure in order to maximize the As partial pressure, which avoids formation of anti phase domains during the initial nucleation stages. Unfortunately, at high pressure, the nucleation of GaAs on the SiO2 is largest as well. As a result, during the initial growth steps, a small amount of GaAs is nucleated on the SiO2 area, which should be avoided. By keeping the high pressure nucleation layer as thin as possible and by reducing the pressure in the reactor as fast as possible, this nucleation can be avoided. A detailed study of the growth sequence for this nucleation layer has been undertaken, showing the tradeoff between thin high pressure nucleation layer and presence of anti-phase domains in the final selectively grown GaAs layer. Loading effects due to enhanced growth at the boundaries of the SiO2 layer are studied as well. Characterization of the material was done with X-ray diffraction, defect etching, cross-section scanning electron microscopy, photoluminescence spectroscopy and Nomarski microscopy. The final results show that the growth of high quality anti phase domain-free GaAs on Ge is possible, with no GaAs nucleation on the SiO2 mask material. A loading effect at the boundaries of the GaAs is still present and can not be eliminated with the present growth precursors. Figure 1: Nomarski microscope picture of a selectively grown GaAs structure on a 6° miscut Ge substrate. The mask material is a 200 nm thick SiO2 film.

The electrical properties of GeO1-xNx/HfO2 stack deposited by atomic beam on Ge are reported. The incorporation of N in the GeOx layer is found to be quite beneficial in reducing the gate leakage current, improving the uniformity of the device characteristics and reducing the equivalent oxide thickness of the gate stack down to about 0.8 nm. On the other hand, N incorporation also leads to a large density of fixed positive charges and slow states, which can be reduced by post- deposition anneals in O2 or N2. These gate stacks were successfully integrated into a simple transistor flow with TiN gates. Both n and p-channel transistors show promising electrical characteristics, with Ion/Ioff ratios of about 4 to 5 orders of magnitude. However, the mobility of the n-channel devices is found to be extremely low, which is most likely due to a large density of acceptor-like interface states in the upper-part of the Ge band-gap.

on the germanium Wafer Surface B. Onsia 2, , T. Conard, S. De Gendt , M. Heyns, I. Hoflijk, P. Mertens, M. Meuris, G. Raskin, S. Sioncke, I. Teerlinck, A. Theuwis J. Van Steenbergen and C. Vinckier 1 Imec, kapeldreef 75, B-3001 Heverlee, Belgium 2 K.U.Leuven, Afd. Fysische en Anal. Chemie, Celestijnenlaan 200F, B-3001 Heverlee, Belgium 3 Umicore, Watertorenstraat 33, B-2250 Olen, Belgium a Bart.Onsia@imec.be

Ge substrates are recently being reconsidered as a candidate material for the replacement of Si substrates in advanced semiconductor devices, due to their enhanced intrinsic mobility [1]. Specifications towards tolerable metallic contamination levels on these substrates are similar as for Si substrates: i.e. a total concentration of critical metals of 5E9 at/cm

In this paper, a single wafer linear IPA vapour based vertical drying technique is presented. Using salt residue tests the performance of this technique is evaluated and compared to spin drying. The equivalent film thickness of evaporating liquid is below 0.05µm for blanket wafers, which is two orders of magnitude less than with spin drying. It is also shown that the presence of surface topography (200nm high TEOS features on Si covered with a chemical oxide) does not significantly influence the drying performance. A study of the process window shows that for the setup evaluated in this work best performance is achieved when the IPA/N2 flow rate is above 20 liters per minute and the drying speed is below 8 mm/s. With a manual prototype already very good particle performance is demonstrated.

Publisher Summary In this chapter, the performance of several drying techniques commonly used in the semiconductor manufacturing industry is evaluated. This is done by measuring the residues on a wafer onto which a solution containing metal salts acting as tracer elements has been dispensed and dried. To correctly interpret the experimental data, the results are compared with predictions from a theoretical model. This model assumes two distinct mechanisms for deposition: adsorption and evaporative deposition. The first mechanism is a result of attractive interactions between the contaminant and the wafer surface, while the second mechanism is due to liquid evaporation during drying. For the latter case, the evaporated film thickness is introduced as a figure of merit for the drying process under study. In the tests, tests, spin drying was compared with two types of Marangoni based drying: on a vertically moving wafer and on a horizontally rotating wafer. The results show that for spin drying two consecutive phases occur: during the first seconds of spinning convective removal of liquid is the dominant mechanism, followed by a phase where evaporation takes over. This behavior is confirmed by models reported in the literature describing photo-resist coating. The amount of liquid evaporating during spin drying is inversely proportional to the square root of the rotation speed. This suggests that entrainment of liquid by the gas flow over the wafer surface is the dominant mechanism for evaporation. This finding is in agreement with fluid dynamics models describing the flow of gas entrained with a rotating substrate.

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