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Implanting of positively charged BF(2) ions into polycrystalline thin Si films with annealing produces high quality shallow p(+)n junctions. The leakage is 1 nanoamperes per square centimeter and a junction depth of 0.05 micrometers occurs in the samples after annealing the samples at 800 degrees Celsius. Characterization of the implantation and annealing process enables the determination of the effects on resultant junctions. Poor characteristics are exhibited by the samples with high energy implantations since the Si substrates are severely damaged.

Details the formation of shallow p[sup +]n junctions by implanting BF[sup +][sub 2] ions into thin polycrystalline silicon films and subsequent annealing. Occurrence of an anomalous boron diffusion; Effect of silicidation on the junction profile; Factor attributed for the large boron redistribution.