1. Gate-Defined Accumulation-Mode Quantum Dots in Monolayer and Bilayer WSe2
- Author
-
J. D. Tull, Jin Hu, Jeb Stacy, T. Taniguchi, A. M. Mercado, Hugh Churchill, Shiva Davari, Krishna Pandey, Kenji Watanabe, and Rabindra Basnet
- Subjects
Physics ,business.industry ,Bilayer ,General Physics and Astronomy ,02 engineering and technology ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,021001 nanoscience & nanotechnology ,01 natural sciences ,Quantum technology ,Coherent control ,Quantum dot ,Qubit ,0103 physical sciences ,Monolayer ,Optoelectronics ,010306 general physics ,0210 nano-technology ,business ,Quantum ,Energy (signal processing) - Abstract
Devices based on few-layer transition-metal dichalcogenides are rapidly being developed for various quantum technologies, such as valleytronic qubits and quantum emitters. Gate-defined quantum dots provide an appealing platform for coherent control of individual valley pseudospins, but well-resolved, discrete energy levels are required. The authors report gate-defined quantum dots in monolayer and bilayer WSe${}_{2}$, small enough to allow observation of transport through discrete levels. These devices thus satisfy an essential requirement for the development of (opto)electronic qubits based on valley-pseudospin states.
- Published
- 2020