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Gate-Defined Accumulation-Mode Quantum Dots in Monolayer and Bilayer WSe2
- Source :
- Physical Review Applied. 13
- Publication Year :
- 2020
- Publisher :
- American Physical Society (APS), 2020.
-
Abstract
- Devices based on few-layer transition-metal dichalcogenides are rapidly being developed for various quantum technologies, such as valleytronic qubits and quantum emitters. Gate-defined quantum dots provide an appealing platform for coherent control of individual valley pseudospins, but well-resolved, discrete energy levels are required. The authors report gate-defined quantum dots in monolayer and bilayer WSe${}_{2}$, small enough to allow observation of transport through discrete levels. These devices thus satisfy an essential requirement for the development of (opto)electronic qubits based on valley-pseudospin states.
- Subjects :
- Physics
business.industry
Bilayer
General Physics and Astronomy
02 engineering and technology
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
021001 nanoscience & nanotechnology
01 natural sciences
Quantum technology
Coherent control
Quantum dot
Qubit
0103 physical sciences
Monolayer
Optoelectronics
010306 general physics
0210 nano-technology
business
Quantum
Energy (signal processing)
Subjects
Details
- ISSN :
- 23317019
- Volume :
- 13
- Database :
- OpenAIRE
- Journal :
- Physical Review Applied
- Accession number :
- edsair.doi...........d5632132bd7c369344f0fa09cd4135d4