1. Test results of heavily irradiated Si detectors
- Author
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D. Pandoulas, C. Bozzi, E. Babucci, Rino Castaldi, A. Caner, Raffaello D'Alessandro, Marco Meschini, Michel Raymond, Giacomo Sguazzoni, Lutz Feld, K. Skog, Roberto Dell'Orso, A. Basti, Andrea Candelori, Alessia Tricomi, A. Giraldo, M. Lenzi, B. Glessing, W.H. Gu, Paolo Ciampolini, J. Connotte, A. Starodumov, Lucia Silvestris, Sebastiano Albergo, G. Stefanini, D. Boemi, Marcello Mannelli, T. Tuuva, K. Freudenreich, F. Raffaelli, Giuseppe Bagliesi, G. M. Bilei, G. Viertel, Andrea Castro, Mika Huhtinen, Z. Xie, R. Hammerstrom, A. Bader, R. Della Marina, Marco Pieri, Fabrizio Palla, P. Bartalini, Bernd Schmitt, G. Raso, Paolo Lariccia, A. Marchioro, Anna Elliott-Peisert, Bruno Wittmer, R. Siedling, S. Piperov, Carlo Civinini, P. Tempesta, Dario Bisello, B. Mc Evoy, M. Da Rold, Mara Bruzzi, I. Stavitski, Horst Breuker, Veikko Karimäki, Y. Wang, Werner Lustermann, G. Martignon, Patrizia Azzi, L. Servoli, C. Eklund, Luigi Fiore, Giovanna Selvaggi, Alberto Messineo, K. Luebelsmeyer, Manfred Krammer, Geoffrey Hall, U. Biggeri, B. Checcucci, C. Vannini, E. Catacchini, M. Loreti, Renato Potenza, Guido Tonelli, Salvatore My, Ettore Focardi, M. De Palma, Giorgio Maggi, Stephen Watts, Donato Creanza, Alessandro Giassi, Josef Hrubec, G. Parrini, M.J. French, Laura Borrello, Daniele Passeri, Filippo Bosi, Piero Giorgio Verdini, Giancarlo Mantovani, Alessandro Paccagnella, and Nicola Bacchetta
- Subjects
Physics ,Nuclear and High Energy Physics ,business.industry ,Detector ,High voltage ,Substrate (electronics) ,Fluence ,silicon microstrip detectors ,radiation damage ,Radiation damage ,Optoelectronics ,Irradiation ,business ,Instrumentation ,Silicon microstrip detectors ,Voltage - Abstract
A large use of silicon microstrip detectors is foreseen for the intermediate part of the CMS tracker. A specific research and development program has been carried out with the aim of finding design layouts and technological solutions for allowing silicon microstrip detectors to be reliably used on a high radiation level environment. As a result of this work single sided, AC-coupled, polysilicon biased, 300 μ m thick, p + on n substrate detectors were chosen. Irradiation tests have been performed on prototypes up to fluence 2×10 14 n/cm 2 . The detector performances do not significantly change if the detectors are biased well above the depletion voltage. S / N is reduced by less than 20%, still enough to insure a good efficiency and space resolution. Multiguard structures has been developed in order to reach high voltage operation (above 500 V).
- Published
- 1999