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The CMS silicon microstrip detectors: research and development

Authors :
A. Giraldo
Carlo Civinini
C. Bozzi
E. Babucci
Manfred Krammer
Fabrizio Palla
U. Biggeri
Mika Huhtinen
Stephen Watts
G. Stefanini
G. Parrini
Donato Creanza
Piero Giorgio Verdini
Veikko Karimäki
R. Della Marina
C. Vannini
Marcello Mannelli
Y. Wang
Alessandro Giassi
Z. Xie
R. Hammerstrom
A. Bader
Josef Hrubec
S. Piperov
Giancarlo Mantovani
Alberto Messineo
Horst Breuker
G. M. Bilei
A. Marchioro
Andrea Castro
I. Stavitski
M.J. French
Guido Tonelli
E. Catacchini
T. Tuuva
Rino Castaldi
B. Schmitt
R. Siedling
Mara Bruzzi
A. Caner
M. Loreti
Daniele Passeri
F. Raffaelli
Giuseppe Bagliesi
Salvatore My
Anna Elliott-Peisert
Bruno Wittmer
B. Glessing
Ettore Focardi
P. Tempesta
Alessandro Paccagnella
M. Da Rold
K. Freudenreich
A. Starodumov
G. Viertel
Nicola Bacchetta
W.H. Gu
Marco Meschini
G. Martignon
K. Luebelsmeyer
M. Lenzi
Werner Lustermann
Lucia Silvestris
Laura Borrello
Sebastiano Albergo
Filippo Bosi
Paolo Ciampolini
J. Connotte
D. Pandoulas
Patrizia Azzi
Paolo Lariccia
C. Eklund
Geoffrey Hall
L. Servoli
G. Raso
Lutz Feld
B. Mc Evoy
Luigi Fiore
Giovanna Selvaggi
B. Checcucci
Renato Potenza
Dario Bisello
M. De Palma
Giorgio Maggi
Giacomo Sguazzoni
A. Basti
K. Skog
Roberto Dell'Orso
Andrea Candelori
Raffaello D'Alessandro
Alessia Tricomi
Michel Raymond
Marco Pieri
P. Bartalini
D. Boemi
Publication Year :
1999

Abstract

A large quantity of silicon microstrip detectors is foreseen to be used as part of the CMS tracker. A specific research and development program has been carried out with the aim of defining layouts and technological solutions suitable for the use of silicon detectors in high radiation environment. Results presented here summarise this work on many research areas such as techniques for device manufacturing, pre- and post-irradiation electrical characterization, silicon bulk defects analysis and simulations, system performance analytical calculations and simulations and test beam analysis. As a result of this work we have chosen to use single-sided, AC-coupled, poly silicon biased, 300 μm thick, p + on n substrate detectors. We feel confident that these devices will match the required performances for the CMS tracker provided they can be operated at bias voltages as high as 500 V. Such high-voltage devices have been succesfully manufactured and we are now concentrating our efforts in enhancing yield and reliability.

Details

Database :
OpenAIRE
Accession number :
edsair.doi.dedup.....34d8a2a18736142a44b0c26471070092