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1. Supplementing Silicoglycidol for the reduction of aflatoxin M1 in milk and biomarkers of liver dysfunction in dairy cows

Author

E.H. Branstad-Spates, C.S. McCarthy, B.C. Dooley, L.E. King, E.L. Bowers, A. Tesouro, J. Borrell, D. Díez, G.E. Rottinghaus, and L.H. Baumgard

Subjects
Dairy processing. Dairy products, SF250.5-275
Abstract

Aflatoxin M1 (AFM1) is a pathogenic metabolite transferred from feed into milk from aflatoxin (AF) B1, B2, G1, and G2; thus, it poses a human health risk. Therefore, effective mitigation strategies are needed to reduce animal and human exposure to AF. Study objectives were to evaluate a dietary adsorbent (Silicoglycidol, ATX) as a sequestering agent in AF-contaminated feed and to broadly examine how AF affects liver function and the immune system. Primiparous Holstein cows (n = 12; 279 ± 88 DIM and 675 ± 19 kg BW) were used in a replicated 3 × 3 Latin square design with 21-d periods in which d 1 to 14 were considered adaptation, and data collected on d 15 to 21 were used for analysis. Treatments were (1) control (CON) consisting of a basal diet, (2) AF diet consisting of CON+AF challenge (100 µg of AFB1/kg DMI), and (3) AF+ATX supplemented at 0.10% of dietary DMI. Feed intake and milk yield were recorded daily, fecal samples were collected on d 20 of each period, blood and urine samples were collected on d 21 of each period, and milk samples were collected on the last 2 d of each period. Data were analyzed using the MIXED procedure of SAS (SAS Institute Inc.). Milk yield and DMI were unaffected by treatment (26.8 ± 1.3 kg/d and 24.0 ± 0.9 kg/d, respectively). Similarly, neither milk composition nor DMI digestibility were affected by treatment. No AFM1 was detected in CON cow milk or urine. Supplementing ATX reduced AFM1 in milk (1.57 vs. 1.14 ± 0.1 µg/L for AF and AF+ATX, respectively) and urine (9.9 vs. 5.6 ± 1.1 µg/L for AF and AF+ATX, respectively). Consuming AF did not affect biomarkers of liver health or immune activation including alanine aminotransferase, aspartate aminotransferase, gamma glutamyltransferase, haptoglobin, and IgG. In summary, feeding ATX reduced the absorption and transfer of dietary AF to milk and urine.

Published
2024
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2. Composition of Carbon Clusters in Implanted Silicon Using Atom Probe Tomography

Author

J. Borrel, Didier Blavette, P. Dumas, Fanny Hilario, Sébastien Duguay, STMicroelectronics [Crolles] (ST-CROLLES), Groupe de physique des matériaux (GPM), Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), and Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, [PHYS]Physics [physics], Monatomic gas, Materials science, Silicon, Analytical chemistry, chemistry.chemical_element, 02 engineering and technology, Atom probe, 021001 nanoscience & nanotechnology, 01 natural sciences, Ion, law.invention, Ion implantation, chemistry, law, Phase (matter), Electric field, 0103 physical sciences, 0210 nano-technology, Instrumentation, Carbon
Abstract

Atom probe tomography was employed to observe and derive the composition of carbon clusters in implanted silicon. This value, which is of interest to the microelectronic industry when considering ion implantation defects, was estimated not to exceed 2 at%. This measurement has been done by fitting the distribution of first nearest neighbor distances between monoatomic carbon ions (C+ and C2+). Carbon quantification has been considerably improved through the detection of molecular ions, using lower electric field conditions as well as equal proportions of 12C and 13C. In these conditions and using another quantification method, we have shown that the carbon content in clusters approaches 50 at%. This result very likely indicates that clusters are nuclei of the SiC phase.

Published
2021
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3. Low temperature carbon co-implantation in silicon: Defects suppression and diffusion modeling

Author

Sébastien Duguay, Vincent Lu, Edwin Arevalo, F. Hilario, P.L. Julliard, Fabien Deprat, J. Borrel, P. Dumas, Wei Zou, W. Zhao, Didier Blavette, STMicroelectronics [Crolles] (ST-CROLLES), Groupe de physique des matériaux (GPM), Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), Applied Materials Gloucester, Centre National de la Recherche Scientifique (CNRS)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Université de Rouen Normandie (UNIROUEN), and Normandie Université (NU)

Subjects
010302 applied physics, [PHYS]Physics [physics], Materials science, Silicon, Diffusion barrier, Phosphorus, Analytical chemistry, General Physics and Astronomy, chemistry.chemical_element, 02 engineering and technology, Atom probe, Trapping, 021001 nanoscience & nanotechnology, 01 natural sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, law.invention, chemistry, law, Phase (matter), 0103 physical sciences, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, Carbon, Stoichiometry, ComputingMilieux_MISCELLANEOUS
Abstract

Carbon has been co-implanted to phosphorus at low temperature (−100 °C) in silicon. As compared to a room temperature carbon implant, phosphorus activation is increased due to the suppression of extended defects. The unusual carbon depleted region observed in both secondary ion mass spectroscopy and atom probe tomography annealed profiles has been explained and modeled using an interstitialcy diffusion barrier of 0.6 eV. Carbon clusters have been interpreted as being composed of several immobile dimers carbon/self-interstitial, in agreement with the stoichiometry of the SiC phase. From the model presented here, an adequate temperature window (>750 °C) has been found regarding self-interstitials trapping by carbon.

Published
2021
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4. Atom probe tomography quantification of carbon in silicon

Author

Sébastien Duguay, J. Borrel, P. Dumas, F. Hilario, Didier Blavette, Groupe de physique des matériaux (GPM), Centre National de la Recherche Scientifique (CNRS)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU), STMicroelectronics [Crolles] (ST-CROLLES), Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), ST Microlectronics, and Entreprise privée

Subjects
Materials science, Silicon, Analytical chemistry, chemistry.chemical_element, 02 engineering and technology, Atom probe, 7. Clean energy, 01 natural sciences, law.invention, Ion, [SPI.MAT]Engineering Sciences [physics]/Materials, law, Electric field, 0103 physical sciences, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Instrumentation, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, [PHYS]Physics [physics], Dopant, Polyatomic ion, 021001 nanoscience & nanotechnology, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, chemistry, 0210 nano-technology, Carbon, Stoichiometry
Abstract

Atom Probe Tomography (APT) was used to quantify carbon in implanted silicon at two various electric fields (~ 15 and 20 V/nm). Using equal proportions of implanted 12C and 13C, the numerous molecular ions that were observed were identified and their contribution to the carbon content statistically derived. Much more accurate carbon quantification was obtained in the lowest electric field analysis by comparing APT with Secondary Ion Mass Spectroscopy profiles. This was assigned to a lower amount of molecular ion dissociations. Furthermore, the number of self-interstitials trapped per carbon atom in clusters was derived. This value of interest for the microelectronics industry regarding dopant diffusion and implantation induced defects was estimated close to one, in agreement with the expected stoichiometry of the SiC phase present in the phase diagram. However, this was obtained only when using low electric field conditions.

Published
2021
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5. PD-SOI CMOS and SiGe BiCMOS Technologies for 5G and 6G communications

Author

A. Fleury, J. Azevedo Goncalves, I. Sicard, J. Uginet, C. Renard, Charles-Alexandre Legrand, E. Brezza, Nicolas Guitard, Frederic Paillardet, G. Bertrand, M.-L. Rellier, Raphael Paulin, Nathalie Vulliet, M. Buczko, Patrice Garcia, Y. Mourier, Olivier Kermarrec, L. Boissonnet, Cedric Durand, J. Borrel, Pascal Chevalier, D. Ney, Sebastien Cremer, Alexis Gauthier, N. Pelloux, Patrick Scheer, F. Foussadier, Frederic Monsieur, L. Garchery, J. Lajoinie, V. Milon, Didier Celi, E. Canderle, C. Diouf, Eric Granger, N. Derrier, Daniel Gloria, Andre Juge, D. Muller, Frederic Gianesello, and A. Pallotta

Subjects
Computer science, Wireless network, business.industry, Electrical engineering, 020206 networking & telecommunications, Soi cmos, 02 engineering and technology, Integrated circuit, BiCMOS, Silicon-germanium, law.invention, chemistry.chemical_compound, chemistry, CMOS, law, Hardware_INTEGRATEDCIRCUITS, 0202 electrical engineering, electronic engineering, information engineering, Radio frequency, business, 5G
Abstract

While 5G wireless networks are currently deployed around the world, preliminary research activities have begun to look beyond 5G and conceptualize 6G standard. Although it is envisioned that 6G may bring an unprecedent transformation of the wireless networks in comparison with previous generations, the necessity to develop analog and RF specialized technologies to address new frequency spectra will remain. In this paper, we review the development of PD-SOI CMOS and SiGe BiCMOS technologies addressing 5G RF Integrated Circuits (RFICs) and their evolutions for 6G.

Published
2020
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6. 3D atomic-scale investigation of carbon segregation in phosphorus co-implanted silicon

Author

E. Ghegin, P. Dumas, A. Gauthier, J. Borrel, Didier Blavette, Sébastien Duguay, STMicroelectronics [Crolles] (ST-CROLLES), Groupe de physique des matériaux (GPM), Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Université de Rouen Normandie (UNIROUEN), and Normandie Université (NU)

Subjects
Materials science, Physics and Astronomy (miscellaneous), Silicon, Diffusion, Analytical chemistry, Nucleation, chemistry.chemical_element, 02 engineering and technology, Atom probe, 01 natural sciences, law.invention, Condensed Matter::Materials Science, law, Phase (matter), 0103 physical sciences, Physics::Atomic and Molecular Clusters, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], ComputingMilieux_MISCELLANEOUS, 010302 applied physics, Dopant, 021001 nanoscience & nanotechnology, chemistry, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Dislocation, 0210 nano-technology, Carbon
Abstract

Dopant diffusion and structural defects are investigated in a carbon-phosphorus implanted silicon. End-of-range defects maturation and phosphorus diffusion are inhibited. A direct imaging of carbon segregation to dislocation loops is given by atom probe tomography. Segregation energies of carbon atoms to these defects are estimated to be about 0.37 eV. The comparison between observed and derived cluster radii indicates a quick decrease in the self-interstitial supersaturation during the nucleation step of carbon precipitation. Carbon clusters are likely to be the precursors of a metastable phase, which is not the expected SiC phase.

Published
2019
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7. Pre-Amorphization Implants and in-situ Surface Preparation Optimization for Low Co-Silicided Area Density

Author

Sylvain Joblot, Magali Gregoire, Marc Juhel, Alexia Valéry, R.A. Bianchi, E. Ghegin, Remi Vallat, and J. Borrel

Subjects
Semiconductor industry, chemistry.chemical_compound, Materials science, chemistry, Surface preparation, Silicide, Process integration, Node (circuits), Area density, Engineering physics
Abstract

Until the 90-nm node, CoSi 2 silicide have been widely used in semiconductor industry. More recently, in order to meet performance requirements in advanced digital nodes, process integration have consensually shifted towards NiPt-based silicides [1] . Nevertheless, advanced memory and imaging technologies being still based on 90-nm core MOS, developments and studies on CoSi 2 silicide are still of the best interest as new challenges are emerging.

Published
2019
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8. 450 GHz <tex>$f_{\text{T}}$</tex> SiGe:C HBT Featuring an Implanted Collector in a 55-nm CMOS Node

Author

Pascal Chevalier, L. Clement, M. Buczko, Alexis Gauthier, A. Montagne, J. Borrel, C. Borowiak, Marc Juhel, G. Avenier, C. Gaquiere, and Romain Duru

Subjects
010302 applied physics, Materials science, Silicon, Dopant, business.industry, Annealing (metallurgy), Heterojunction bipolar transistor, 020208 electrical & electronic engineering, Doping, chemistry.chemical_element, 02 engineering and technology, 01 natural sciences, CMOS, chemistry, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, business
Abstract

This paper deals with the optimization of a Si/SiGe HBT featuring an implanted collector and a DPSA-SEG emitter-base architecture. Arsenic and phosphorous doping species are studied. On the one hand, both silicon defects and dopants profiles control are evaluated and on the other hand, hf performances are presented. Carbon-phosphorous co-implantation is also investigated and a state-of-the-art 450 GHz $f_{\text{T}}$ HBT compatible with 55-nm MOSFETs is demonstrated through a device layout study.

Published
2018
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9. Characterization of Heated Ion Implantation for non Amorphizing Conditions and Correlation with Kinetic Monte Carlo Simulations

Author

Vincent Lu, Fuccio Cristiano, Denis Rideau, Remi Beneyton, Nicolas Guitard, Marc Juhel, Edwin Arevalo, Wei Zou, C. Borowiak, Thomas Nassiet, Frederic Monsieur, E. Ghegin, L. Pinzelli, J. Borrel, K. Dabertrand, Romain Duru, L. Clément, Evan Oudot, and Sylvain Joblot

Subjects
010302 applied physics, Condensed Matter::Materials Science, Work (thermodynamics), Ion implantation, Photoluminescence, Materials science, 0103 physical sciences, Radiative transfer, Kinetic Monte Carlo, 01 natural sciences, Molecular physics, Characterization (materials science)
Abstract

In this work, heated implantation impact on defect generation is observed for non-amorphizing conditions and specific anneal. Photoluminescence imaging method has been used and exhibits radiative defect density variation with chuck temperature. Moreover, to understand the behavior of such implantation in terms of defect generation and depth profile, effectiveness of Kinetic Monte Carlo (KMC) simulations is discussed.

Published
2018
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10. Investigation of ambipolar signature in SiGeOI homojunction tunnel FETs

Author

Sebastien Martinie, Claude Tabone, C. Le Royer, Louis Hutin, J. Borrel, M. Vinet, and R. P. Oeflein

Subjects
010302 applied physics, Materials science, business.industry, Ambipolar diffusion, Schottky barrier, Doping, Transistor, Electrical engineering, Biasing, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Signature (logic), Electronic, Optical and Magnetic Materials, law.invention, law, 0103 physical sciences, Materials Chemistry, Optoelectronics, Electrical and Electronic Engineering, Homojunction, 0210 nano-technology, business, Quantum tunnelling
Abstract

In this paper, we study the ambipolar tunneling signature from the output characteristics of TFETs featuring Si 0.8 Ge 0.2 homojunctions, which we compare to those measured on conventional MOSFETs and Schottky Barrier FETs. The difference with the former is immediate since a single TFET can display a transistor effect under both pull-up (nTFET) and pull-down (pTFET) biasing conditions. This is however a property shared with SBFETs, in which injection occurs via tunneling through a single carrier Schottky Barrier instead of band-to-band tunneling. Without requiring quantitative considerations on the current levels or transfer characteristics, we find that simply performing the same dual I D – V DS electrical tests while voluntarily “swapping” the S/D terminals unequivocally characterizes TFET operation, even compared to asymmetrically doped SBFETs.

Published
2016
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11. The time-resolved and extreme conditions XAS (TEXAS) facility at the European Synchrotron Radiation Facility: the general-purpose EXAFS bending-magnet beamline BM23

Author

Ricardo Hino, D. Bugnazet, J. Borrel, Antonia Beteva, Suresh Gatla, Manuel Muñoz, Sakura Pascarelli, Innokenty Kantor, François Perrin, Sebastien Pasternak, Trevor Mairs, Olivier Mathon, and European Synchrotron Radiation Facility (ESRF)

Subjects
[PHYS]Physics [physics], Nuclear and High Energy Physics, X-ray absorption spectroscopy, Radiation, Materials science, Extended X-ray absorption fine structure, business.industry, microXAS, Analytical chemistry, Synchrotron radiation, Beamlines, XANES, Bending magnets, EXAFS, XAS beamline, Upgrade, Optics, Beamline, General purpose, ESRF, business, Instrumentation, Data reduction
Abstract

BM23 is the general-purpose EXAFS bending-magnet beamline at the ESRF, replacing the former BM29 beamline in the framework of the ESRF upgrade. Its mission is to serve the whole XAS user community by providing access to a basic service in addition to the many specialized instruments available at the ESRF. BM23 offers high-signal-to-noise ratio EXAFS in a large energy range (5–75 keV), continuous energy scanning for quick-EXAFS on the second timescale and a micro-XAS station delivering a spot size of 4 µm × 4 µm FWHM., BM23 is the general-purpose EXAFS bending-magnet beamline at the ESRF, replacing the former BM29 beamline in the framework of the ESRF upgrade. Its mission is to serve the whole XAS user community by providing access to a basic service in addition to the many specialized instruments available at the ESRF. BM23 offers high signal-to-noise ratio EXAFS in a large energy range (5–75 keV), continuous energy scanning for quick-EXAFS on the second timescale and a micro-XAS station delivering a spot size of 4 µm × 4 µm FWHM. It is a user-friendly facility featuring a high degree of automation, online EXAFS data reduction and a flexible sample environment.

Published
2015
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12. Prevention of Temperature-Induced Dewetting of Implanted SOI via Heated Ion Implantation

Author

Vincent Lu, L. Clement, Alexis Gauthier, Edwin Arevalo, Pascal Chevalier, Fabien Deprat, Wei Zou, Heloise Tupin, F. Abbate, Didier Dutartre, Sylvain Joblot, and J. Borrel

Subjects
Materials science, business.industry, Economies of agglomeration, Silicon on insulator, 02 engineering and technology, 021001 nanoscience & nanotechnology, Epitaxy, 01 natural sciences, Crystallographic defect, Ion implantation, CMOS, 0103 physical sciences, Optoelectronics, Dewetting, Thin film, 010306 general physics, 0210 nano-technology, business
Abstract

To co-integrate bipolar devices with 28 nm FDSOI CMOS using the epitaxial extrinsic base isolated from the collector architecture, an epitaxy is needed on a pre-implanted SOI. The issue of thin film agglomeration induced by epitaxy pre-bake is addressed. Particularly, it is shown that high dose implantation induced damages and point defects lead to a decrease of the SOI critical temperature of agglomeration. In this study, heated implantation is proposed in order to solve this issue.

Published
2018
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13. Ultra-thin dielectric insertions for contact resistivity lowering in advanced CMOS: Promises and challenges

Author

Yves Morand, Louis Hutin, Donato Kava, Fabrice Nemouchi, Maud Vinet, Magali Gregoire, Emmanuel Dubois, N. Bernier, J. Borrel, Remy Gassilloud, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), University of Texas [El Paso] (UTEP ), Microélectronique Silicium - IEMN (MICROE SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), French Public Authority through NANO, French Public Authority through Equipex [FDSOI11], and Microélectronique Silicium - IEMN (MICROELEC SI - IEMN)

Subjects
010302 applied physics, Materials science, Physics and Astronomy (miscellaneous), Applied physics, business.industry, General Engineering, General Physics and Astronomy, Nanotechnology, Insulator (electricity), 02 engineering and technology, Dielectric, 021001 nanoscience & nanotechnology, 01 natural sciences, Engineering physics, [SPI]Engineering Sciences [physics], Semiconductor, CMOS, Electrical resistivity and conductivity, 0103 physical sciences, 0210 nano-technology, business
Abstract

International audience; In this paper, in order to provide a comprehensive overview of the opportunities and limitations of the metal/insulator/semiconductor contacts approach, expected performance based on ideal contact simulations as well as key practical aspects are presented. While the former give us a glimpse of the theoretical potential of this paradigm, mainly to contact nFETs, the latter highlights concerns about the electrical characterization of such contacts along with issues occurring during their physical implementation. (c) 2017 The Japan Society of Applied Physics

Published
2017
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15. High performance CMOS FDSOI devices activated at low temperature

Author

Louis Hutin, J. Mazurier, D. Barge, L. Pasini, Olivier Weber, Frédéric Mazen, F. Piegas Luce, Claire Fenouillet-Beranger, M. Vinet, Antoine Cros, E. Ghegin, B. Mathieu, S. Chhun, J. Borrel, Frederic Boeuf, Quentin Rafhay, Anthony Payet, Michel Haond, Perrine Batude, M. Casse, Fuccio Cristiano, Benoit Sklenard, Zineb Saghi, Joris Lacord, D. Blachier, J.P. Barnes, Gerard Ghibaudo, Francois Andrieu, V. Mazzocchi, N. Rambal, J. Micout, Vincent Delaye, V. Lapras, Laurent Brunet, R. Daubriac, Pascal Besson, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), STMicroelectronics [Crolles] (ST-CROLLES), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Nano 2017, ANR-10-EQPX-0030,FDSOI11,Plateforme FDSOI pour le node 11nm(2010), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), and Université Fédérale Toulouse Midi-Pyrénées

Subjects
010302 applied physics, Materials science, business.industry, 02 engineering and technology, 01 natural sciences, 020202 computer hardware & architecture, PMOS logic, CMOS, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, business, NMOS logic
Abstract

International audience; 3D sequential integration requires top FETs processed with a low thermal budget (500-600°C). In this work, high performance low temperature FDSOI devices are obtained thanks to the adapted extension first architecture and the introduction of mobility boosters (pMOS: SiGe 27% channel / SiGe:B 35% RSD and nMOS: SiC:P RSD). This first demonstration of n and p extension first FDSOI devices shows that low temperature activated device can match the performance of a device with state-of-the-art high temperature process (above 1000°C).

Published
2016
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16. Considerations on Fermi-depinning, dipoles and oxide tunneling for oxygen-based dielectric insertions in advanced CMOS contacts

Author

Magali Gregoire, Emmanuel Nolot, H. Grampeix, M. Vinet, Fabienne Allain, J.P. Barnes, E. Ghegin, Claude Tabone, Louis Hutin, Philippe Rodriguez, Emmanuel Dubois, Fabrice Nemouchi, Yves Morand, J. Borrel, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), STMicroelectronics, Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Laboratoire commun STMicroelectronics-IEMN T4, and Microélectronique Silicium - IEMN (MICROE SI - IEMN)

Subjects
Materials science, business.industry, Oxide, Insulator (electricity), Dielectric, Atomic layer deposition, chemistry.chemical_compound, [SPI]Engineering Sciences [physics], Semiconductor, chemistry, Electrical resistivity and conductivity, Electronic engineering, Optoelectronics, business, Silicon oxide, Quantum tunnelling
Abstract

International audience; We present experimental and simulated J-V characteristics of Metal/Insulator/Semiconductor (MIS) junctions aiming at improving the contact resistivity for advanced CMOS nodes. We show that an Atomic Layer Deposition (ALD)-based Al2O3 process may induce a native silicon oxide regrowth leading to an additional tunneling resistance in series. A modelling-based analysis of Metal/Insulator/Insulator/Metal (MIIS) contacts, including the potentially beneficial interfacial dipole, provides a new outlook on high-kappa/SiO2 bilayers for low resistivity contacts.

Published
2016
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17. Metal/insulator/semiconductor contacts for ultimately scaled CMOS nodes: projected benefits and remaining challenges

Author

Maud Vinet, H. Grampeix, Emmanuel Dubois, Magali Gregoire, Emmanuel Nolot, Yves Morand, Magali Tessaire, J. Borrel, Guillaume Rodriguez, Fabrice Nemouchi, Louis Hutin, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), STMicroelectronics [Grenoble] (ST-GRENOBLE), Jiang, YL, Qu, XP, Ru, GP, Li, BZ, and Laboratoire commun STMicroelectronics-IEMN T4

Subjects
010302 applied physics, Materials science, business.industry, Insulator (electricity), 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Engineering physics, [SPI]Engineering Sciences [physics], Semiconductor, CMOS, 0103 physical sciences, Electronic engineering, Hardware_INTEGRATEDCIRCUITS, Metal insulator, 0210 nano-technology, business
Abstract

International audience; In this paper, some key fundamental aspects of Metal / Insulator / Semiconductor contacts as well as practical issues occurring with their implementation are reviewed in order to fully comprehend the opportunities and limitations of this approach.

Published
2016

18. Modeling of Fermi-level pinning alleviation with MIS contacts: n and pMOSFETs cointegration considerations-Part II

Author

Louis Hutin, J. Borrel, Olivier Rozeau, Sebastien Martinie, Emmanuel Dubois, Magali Gregoire, Maud Vinet, Marie-Anne Jaud, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Microélectronique Silicium - IEMN (MICROE SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), French Public Authorities through the NANO Program, French National Research AgencyFrench National Research Agency (ANR) [FDSOI11], ST-LETI Joint Program, Laboratoire commun STMicroelectronics-IEMN T4, Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), and STMicroelectronics [Crolles] (ST-CROLLES)

Subjects
02 engineering and technology, Ring oscillator, Dielectric, 01 natural sciences, Omega, [SPI]Engineering Sciences [physics], Electrical resistivity and conductivity, 0103 physical sciences, MOSFET, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Ohmic contact, n and pFETs cointegration, 010302 applied physics, Physics, Condensed matter physics, business.industry, Doping, Electrical engineering, 021001 nanoscience & nanotechnology, Electronic, Optical and Magnetic Materials, Semiconductor, ring oscillators (ROs) frequency, Metal/insulator/semiconductor (MIS) contacts, 0210 nano-technology, business
Abstract

In this paper, the insertions of dielectric in metal/insulator/semiconductor contacts are considered via their associated impact on the dc and ac performances. Based on dc output characteristics projections, we found that single insertion and/or single-metal integration schemes are unlikely to result in simultaneously successful Fermi-level pinning alleviation on both n and pFETs. We show that the added $C_{\mathrm { {MIS}}}$ contributes to a significant extra improvement in terms of intrinsic inverter delay. In particular, an optimal configuration consisting of Pt-liner/ p-Si and Zr/TiO2(15A)/n-Si contacts can lead to a ring oscillator frequency higher than that of p and nFETs each flanked by ideal ohmic contacts with $10^{-9}~\Omega \cdot {\mathrm{ cm}}^{2}$ resistivity.

Published
2016
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19. Post-ischemic reorganization of sensory responses in cerebral cortex

Author

P. Hayley, C. Tuchek, S. Dalla, J. Borrell, M. D. Murphy, R. J. Nudo, and D. J. Guggenmos

Subjects
plasticity, somatosensory, stimulation, activity, cerebral cortex, Neurosciences. Biological psychiatry. Neuropsychiatry, RC321-571
Abstract

IntroductionSensorimotor integration is critical for generating skilled, volitional movements. While stroke tends to impact motor function, there are also often associated sensory deficits that contribute to overall behavioral deficits. Because many of the cortico-cortical projections participating in the generation of volitional movement either target or pass-through primary motor cortex (in rats, caudal forelimb area; CFA), any damage to CFA can lead to a subsequent disruption in information flow. As a result, the loss of sensory feedback is thought to contribute to motor dysfunction even when sensory areas are spared from injury. Previous research has suggested that the restoration of sensorimotor integration through reorganization or de novo neuronal connections is important for restoring function. Our goal was to determine if there was crosstalk between sensorimotor cortical areas with recovery from a primary motor cortex injury. First, we investigated if peripheral sensory stimulation would evoke responses in the rostral forelimb area (RFA), a rodent homologue to premotor cortex. We then sought to identify whether intracortical microstimulation-evoked activity in RFA would reciprocally modify the sensory response.MethodsWe used seven rats with an ischemic lesion of CFA. Four weeks after injury, the rats’ forepaw was mechanically stimulated under anesthesia and neural activity was recorded in the cortex. In a subset of trials, a small intracortical stimulation pulse was delivered in RFA either individually or paired with peripheral sensory stimulation.ResultsOur results point to post-ischemic connectivity between premotor and sensory cortex that may be related to functional recovery. Premotor recruitment during the sensory response was seen with a peak in spiking within RFA after the peripheral solenoid stimulation despite the damage to CFA. Furthermore, stimulation in RFA modulated and disrupted the sensory response in sensory cortex.DiscussionThe presence of a sensory response in RFA and the sensitivity of S1 to modulation by intracortical stimulation provides additional evidence for functional connectivity between premotor and somatosensory cortex. The strength of the modulatory effect may be related to the extent of the injury and the subsequent reshaping of cortical connections in response to network disruption.

Published
2023
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20. Considerations for efficient contact resistivity reduction via Fermi Level depinning - impact of MIS contacts on 10nm node nMOSFET DC characteristics

Author

Thierry Poiroux, Perrine Batude, O. Rozeau, J. Borrel, M. Vinet, Louis Hutin, and Fabrice Nemouchi

Subjects
Materials science, Condensed matter physics, business.industry, Contact resistance, Transistor, Doping, Fermi level, Electrical engineering, Insulator (electricity), law.invention, symbols.namesake, Semiconductor, law, Electrical resistivity and conductivity, symbols, business, Ohmic contact
Abstract

In the overwhelming majority of cases, current-voltage characteristics of metal-based contacts on semiconductors are non-linear around 0V even for degenerate interfacial doping levels. Any contact resistivity specification is therefore meaningless without the knowledge of the effective bias across the contact. For the first time, the efficiency of a dielectric insertion for contact resistance reduction was properly evaluated by solving the self-consistent case of voltage sharing for an aggressively scaled transistor flanked by two trench Metal/ Insulator/Semiconductor (MIS) contacts. We found that leveraging the Fermi Level depinning via optimized MIS contacts could lead to a +92% drive current (V GS =V dd =0.7V) increase versus a Titanium liner-based silicidation-free approach.

Published
2015
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21. Investigation of ambipolar signature in SiGeOI homojunction tunnel FETs

Author

Sebastien Martinie, Claude Tabone, R. P. Oeflein, A. Villalon, Louis Hutin, J. Borrel, M. Vinet, and C. Le Royer

Subjects
Materials science, business.industry, Ambipolar diffusion, Schottky barrier, Transistor, Doping, Biasing, Signature (logic), law.invention, law, Optoelectronics, Homojunction, business, Quantum tunnelling
Abstract

In this paper, we study the ambipolar tunneling signature from the output characteristics of TFETs featuring Si 0.8 Ge 0.2 homojunctions, which we compare to those measured on conventional MOSFETs and Schottky Barrier FETs. The difference with the former is immediate since a single TFET can display a transistor effect under both pull-up (nTFET) and pulldown (pTFET) biasing conditions. This is however a property shared with SBFETs, in which injection occurs via tunneling through a single carrier Schottky Barrier instead of band-to-band tunneling. Without requiring quantitative considerations on the current levels or transfer characteristics, we find that simply performing the same dual I d -V ds electrical tests while voluntarily "swapping" the S/D terminals unequivocally characterizes TFET operation, even compared to asymmetrically doped SBFETs.

Published
2015
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22. Junction technology outlook for sub-28nm FDSOI CMOS

Author

Olivier Rozeau, Maud Vinet, Cyrille Le Royer, Fabrice Nemouchi, Perrine Batude, Hervé Boutry, J. Borrel, C. Plantier, Jean-Michel Hartmann, Claire Fenouillet-Beranger, Sylvain Barraud, Yves Morand, Louis Hutin, Thomas Ernst, V. Carron, and Laurent Grenouillet

Subjects
Materials science, CMOS, business.industry, Process integration, Electrical engineering, Key (cryptography), Silicon on insulator, business, Efficient energy use
Abstract

We review in this paper some key enabling process integration modules, the development of which will allow pursuing the trend of energy efficiency improvement in sub-28nm FDSOI technologies.

Published
2014
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24. Ferroelectric control of magnetic domains in ultra-thin cobalt layers

Author

Nava Setter, Z. Huang, Stefania Pizzini, Igor Stolichnov, L. Herrera Diez, Laurent Ranno, Gilles Gaudin, Olivier Boulle, J. Borrel, S. Auffret, Anne Bernand-Mantel, Ceramics Laboratory, Swiss Federal Institute of Technology (EPFL), Lausanne, Switzerland, Ecole Polytechnique Fédérale de Lausanne (EPFL), Micro et NanoMagnétisme (MNM), Institut Néel (NEEL), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS), SPINtronique et TEchnologie des Composants (SPINTEC), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Micro et NanoMagnétisme (NEEL - MNM), and Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF)

Subjects
Materials science, Physics and Astronomy (miscellaneous), Magnetic domain, Condensed matter physics, Nucleation, 02 engineering and technology, Coercivity, 021001 nanoscience & nanotechnology, 01 natural sciences, Ferroelectricity, Hysteresis, Magnetic anisotropy, Condensed Matter::Materials Science, Domain wall (magnetism), 0103 physical sciences, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Single domain, 010306 general physics, 0210 nano-technology
Abstract

Non-volatile ferroelectric control of magnetic domains has been demonstrated in ultra-thin cobalt layers at room temperature. The sensitivity of magnetic anisotropy energy to the electronic structure in a few atomic layers adjacent to the interface allows for ferroelectric control of coercivity and magnetic domain dynamics. These effects have been monitored and quantified using magneto-optical Kerr effect. In particular, the regimes, where the ferroelectric domains enhance/inhibit the magnetic domain nucleation or increase/reduce domain wall velocity, have been explored. Thus, non-destructive and reversible ferroelectric domain writing provides a tool to define the magnetic domain paths, create nucleation sites, or control domain movement. (C) 2013 AIP Publishing LLC.

Published
2013
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25. Improvement in Bragg crystal bender design for a polychromator

Author

J. Borrel, O. Mathon, and Trevor Mairs

Subjects
Polychromator, Crystal, Optics, Materials science, Beamline, business.industry, Bent molecular geometry, Focal spot, business
Abstract

A new design for a polychromator Bragg bender at ID24 Dispersive EXAFS beamline (ESRF) shows improvements in stability, in the shape of the bent crystal and in the efficiency of adjustments to find the best focal spot.

Published
2011
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27. P-1270 - Cytokines levels in schizophrenia patients and in theirs first- degree biological relatives

Author

Eva Andrés-Esteban, Fernando García-Sánchez, J. Borrel, Isabel Martínez-Gras, Tomás Palomo, Gabriel Rubio, R. Rodriguez-Jimenez, and Carmen Guaza

Subjects
business.industry, medicine.medical_treatment, Incidence (epidemiology), Interleukin, medicine.disease, Proinflammatory cytokine, Psychiatry and Mental health, Cytokine, Schizophrenia, Immunology, medicine, Etiology, Statistical analysis, business, Diagnosis of schizophrenia
Abstract

Introduction It is hypothesized that in the etiology of schizophrenia genetic and environmental factors are involved. Between the environmental events linked to the causation of this condition an inmune dysfunction has been described. First degree biological relatives of people with schizophrenia also have an incrased incidence of autoimmune diseases. Objectives The aim of this work was to examine the serum levels of proinflammatory cytokines (IL-1β, sIL-2R IL-6, IL-12p70, TNF-α and IFN-γ) as well as of anti-inflammatory cytokines (IL-4 and IL-10) in male patients with schizophrenia and in their first degree-biological relatives. Methods Blood samples were obtained from patients with a diagnosis of schizophrenia in a stable psychophatological condition (n = 36), first degree biological relatives of those patients and a healthy control group (n = 26). Serum interleukins were analyzed using a commercial ELISA preparation (Bender MedSystems). We used non-parametric test for statistical analysis. Results Patients with schizophrenia showed significantly higher serum levels of proinflammatory cytokines (sIL-2R, IL-6, TNF-α, IFN-γ and IL12-p70) and lower serum levels of the anti-inflammatory cytokine IL-4 than in the healthy control group. The unaffected first-degree relatives showed changes in proinflammatory cytokines (sIL-2R, IL-6 and TNF-α,) in the same way as the corresponding schizophrenia patients, but at a lower level than the healthy control group. Conclusions Ours findings suggest that sIL-2R, IL-6 and TNF-a may be biologic vulnerability markers for psychiatric disorders and also these alterations might have an hereditably pattern.

Published
2012
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28. 1H-NMR comparative studies of dinucleoside monophosphates. Influence of different factors on the conformational equilibria of nucleoside and dinucleoside monophosphates in aqueous solution

Author

Son Tran-Dinh, J Borrel, and Jean-Michel Neumann

Subjects
chemistry.chemical_classification, Stereochemistry, Chemistry, Intramolecular force, Chemical shift, Intermolecular force, Alkane stereochemistry, Proton NMR, Molecule, Glycosidic bond, Biochemistry, Genetics and Molecular Biology (miscellaneous), Conformational isomerism
Abstract

In order to obtain information about different factors which exert a great influence on the conformational equilibria of mono-, di- and oligonucleotides, the average conformation of four heterodinucleoside monophosphates, ApC, CpA, ApU and UpA, was studied by 1H-NMR at 250 MHz and compared with that of GpC, CpG, GpU, UpG and the corresponding nucleosides and nucleotides. The ratio of N S conformers and the rotamer distribution of the exocyclic group were evaluated from proton-proton coupling constants, and the orientation of the base about the glycosidic bond from proton relaxation involving selective deuteration. The influence of intra- and intermolecular interactions on proton chemical shifts and conformational equilibria has been carefully studied from temperature and concentration effects. The results show that intermolecular base-base stacking does not modify the average conformation of dinucleoside monophosphates, while the intramolecular interaction (between residues of the same molecule) favours the N conformer, the gg rotamer and the anti conformation. The large upfield shift of H5′ (lower field resonances) compared with H5″ (higher field resonances) and the large variation of the N proportion with increasing temperature suggest that H3′ is statistically closer to H5′ than H5″. There is a correlation between temperature, the gg rotamer and the variation in the relative chemical shifts between H5′ and H5″. These conclusions are in agreement with those of our previous work on GMPs using pH and temperature effects. T1 relaxation studies indicate a large predominance of the anti conformation for both residues of ApC and ApU; these two compounds also exhibit a very high degree of association. For the naturally occurring ribonucleoside derivatives in aqueous solution, the base chemical structure, the position of the phosphate group, the temperature and pH are among the most important factors which can modify the conformation equilibria of molecules: the N conformation is generally more favoured in pyrimidine than in purine derivatives. The anti proportion is higher in 5′- than in 2′- or 3′-mononucleotides. However, the influence due to the position of the phosphate group is not determined in dinucleoside monophosphates. The temperature effect is negligible on the conformation of monomers but is remarkably large for the dimers: it consists of reducing the N and gg proportions which are preponderant in the dimers at room temperature. The pH effect is particularly large for the G residue, the conformation of which changes upon pr tonation at N7 (pK ≈ 2.3); the N conformer is favoured at acidic pH.

Published
1981
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29. PMR-relaxation and steric computations give unequivocal nucleoside conformations

Author

J Borrel, Son Tran-Dinh, Wilhelm Guschlbauer, Jean-Michel Neumann, and Jean Thiery

Subjects
Steric effects, chemistry.chemical_classification, Magnetic Resonance Spectroscopy, Anomer, Chemistry, Stereochemistry, Molecular Conformation, Glycosidic bond, Crystal structure, Pyrimidine Nucleosides, Biochemistry, Genetics and Molecular Biology (miscellaneous), Pseudouridine, Structure-Activity Relationship, chemistry.chemical_compound, Alkane stereochemistry, Proton NMR, Conformational isomerism
Abstract

The configuration and the conformation of alpha and beta anomers of pyrazomycin, cytidine and pseudouridine in aqueous solution have been investigated by 1H-NMR at 250 MHz. T1 proton relaxation measurements are an excellent method to determine the conformation of the base around the glycosidic linkage. Frequently, steric hindrance considerations can help to decide which conformations are possible in nucleoside anomer pairs. The proton-proton coupling constants indicate that the N conformer is largely predominant in the alpha anomers while the S conformer is particularly abundant in beta-pyrazomycin. The steric hindrance is much larger for alpha than for beta-nucleosides and change of a C-C to a C-N glycosidic bond reduces considerably the rotational possibilities of the base. The relaxation data show that alpha-cytidine adopts the anti conformation with gamma = 200 degrees in good agreement with the crystal structure and with the sterical computations. In the other case, when the syn and anti conformations are sterically accessible, the orientation of the base may be completely different from one nucleoside to the other. It can be predicted neither from the crystal structure nor from comparisons with similar compounds. For alpha-pseudo-uridine the predominant orientation of the base (gamma = 120 degrees) is in the boundary of the syn-anti regions; for beta-cytidine the syn (gamma = 65 degrees) and anti (gamma = 215 degrees) conformations are equiprobable at room temperature while beta-pseudouridine shows the syn conformation with gamma = 40 degrees, the smallest angle observed until now. There is no correlation between the N/S and syn-anti ratios.

Published
1977
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32. An exchangeable Bragg/Laue polychromator for energy-dispersive XAFS

Author

M. Renier, G. Marot, J. Borrel, Michael Hagelstein, and A. San-Miguel

Subjects
Nuclear and High Energy Physics, Range (particle radiation), Radiation, Absorption spectroscopy, business.industry, Chemistry, Spectral line, X-ray absorption fine structure, Polychromator, Full width at half maximum, Reflection (mathematics), Optics, Absorption (electromagnetic radiation), business, Instrumentation
Abstract

An original design for a cooled exchangeable polychromator for energy-dispersive XAFS (X-ray absorption fine structure) working either in the transmission configuration (Laue case) or in the reflection configuration (Bragg case) is presented. It enables the acquisition of X-ray absorption spectra between 5 and 25 keV with a spot size on the sample that can reach to less than 20 microm FWHM for some energies. Only 1 h is needed to exchange both benders in operative mode. Parallel transmission spectra with a bandpass between 5 and 10% can be obtained in the full energy range. The dispersive optics and mechanics of ID24 (ESRF, Grenoble, France) have been designed to obtain XAFS spectra in less than 1 s and, in some cases, in the millisecond range.

33. Bicyclic Pyrrolidine Inhibitors of Toxoplasma gondii Phenylalanine t-RNA Synthetase with Antiparasitic Potency In Vitro and Brain Exposure.

Author

Ence CC, Uddin T, Borrel J, Mittal P, Xie H, Zoller J, Sharma A, Comer E, Schreiber SL, Melillo B, Sibley LD, and Chatterjee AK

Subjects
Animals, Structure-Activity Relationship, Antiparasitic Agents pharmacology, Antiparasitic Agents chemistry, Enzyme Inhibitors pharmacology, Enzyme Inhibitors chemistry, Mice, Toxoplasmosis drug therapy, Humans, Azetidines pharmacology, Azetidines chemistry, Toxoplasma drug effects, Toxoplasma enzymology, Pyrrolidines pharmacology, Pyrrolidines chemistry, Brain parasitology, Phenylalanine-tRNA Ligase antagonists & inhibitors, Phenylalanine-tRNA Ligase chemistry
Abstract

Previous studies have shown that bicyclic azetidines are potent and selective inhibitors of apicomplexan phenylalanine tRNA synthetase (PheRS), leading to parasite growth inhibition in vitro and in vivo, including in models of Toxoplasma infection. Despite these useful properties, additional optimization is required for the development of efficacious treatments of toxoplasmosis from this inhibitor series, in particular, to achieve optimal exposure in the brain. Here, we describe a series of PheRS inhibitors built on a new bicyclic pyrrolidine core scaffold designed to retain the exit-vector geometry of the isomeric bicyclic azetidine core scaffold while offering avenues to sample diverse chemical space. Relative to the parent series, bicyclic pyrrolidines retain reasonable potency and target selectivity for parasite PheRS vs host. Further structure-activity relationship studies revealed that the introduction of aliphatic groups improved potency and ADME and PK properties, including brain exposure. The identification of this new scaffold provides potential opportunities to extend the analogue series to further improve selectivity and potency and ultimately deliver a novel, efficacious treatment of toxoplasmosis.

Published
2024
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34. SOMOphilic alkyne vs radical-polar crossover approaches: The full story of the azido-alkynylation of alkenes.

Author

Borrel J and Waser J

Abstract

We report the detailed background for the discovery and development of the synthesis of homopropargylic azides by the azido-alkynylation of alkenes. Initially, a strategy involving SOMOphilic alkynes was adopted, but only resulted in a 29% yield of the desired product. By switching to a radical-polar crossover approach and after optimization, a high yield (72%) of the homopropargylic azide was reached. Full insights are given about the factors that were essential for the success of the optimization process., (Copyright © 2024, Borrel and Waser.)

Published
2024
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35. Acyl-Ethynylbenziodoxolone (acyl-EBX): Access to Ketene Dithioarylacetals.

Author

Palamini P, Borrel J, Djaïd M, Delattre M, and Waser J

Abstract

We report the synthesis of ketene dithioarylacetals in 40-97% yield using thiophenols and acyl-EBXs (ethynylbenziodoxolones) generated in situ from a common hypervalent iodine precursor and alkynyl trifluoroborate salts. The products could be further modified to afford functionalized ketene dithioacetals and various S -substituted heterocycles.

Published
2023
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36. Azido-alkynylation of alkenes through radical-polar crossover.

Author

Borrel J and Waser J

Abstract

We report an azido-alkynylation of alkenes allowing a straightforward access to homopropargylic azides by combining hypervalent iodine reagents and alkynyl-trifluoroborate salts. The design of a photocatalytic redox-neutral radical polar crossover process was key to develop this transformation. A variety of homopropargylic azides possessing electron-rich and -poor aryls, heterocycles or ether substituents could be accessed in 34-84% yield. The products are synthetically useful building blocks that could be easily transformed into pyrroles or bioactive amines., Competing Interests: There are no conflicts to declare., (This journal is © The Royal Society of Chemistry.)

Published
2023
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37. Copper-Catalyzed Alkynylation of Hydrazides: An Easy Access to Functionalized Azadipeptides.

Author

Le Du E, Borrel J, and Waser J

Subjects
Amino Acids, Catalysis, Hydrazines, Alkynes chemistry, Copper chemistry
Abstract

We report a copper-catalyzed alkynylation of azadipeptides using ethynylbenziodoxolone (EBX) reagents. Nonsymmetrical ynehydrazides could be obtained in 25-97% yield using azaglycine derivatives as nucleophiles. The transformation is compatible with most functional groups naturally occurring on amino acid side chains and allows the transfer of silyl-, alkyl-, and aryl-substituted alkynes. The obtained α-alkynyl azaglycine products could be further functionalized by nucleophilic attack or cycloaddition on the triple bond.

Published
2022
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38. Tosyloxybenziodoxolone: A Platform for Performing the Umpolung of Alkynes in One-Pot Transformations.

Author

Borrel J and Waser J

Abstract

Ethynylbenziodoxolones (EBXs) are commonly encountered reagents for the electrophilic alkynylation of nucleophiles. Herein, we report a one-pot, two-step process for EBX generation and their direct application in substrate functionalization. Our approach enables us to bypass the originally mandatory isolation and purification of the reagents, resulting in a more efficient synthesis. We could apply this process to seven different transformations involving both two- and one-electron nucleophiles to obtain a large variety of alkynylated products.

Published
2022
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39. Composition of Carbon Clusters in Implanted Silicon Using Atom Probe Tomography.

Author

Dumas P, Duguay S, Borrel J, Hilario F, and Blavette D

Abstract

Atom probe tomography was employed to observe and derive the composition of carbon clusters in implanted silicon. This value, which is of interest to the microelectronic industry when considering ion implantation defects, was estimated not to exceed 2 at%. This measurement has been done by fitting the distribution of first nearest neighbor distances between monoatomic carbon ions (C+ and C2+). Carbon quantification has been considerably improved through the detection of molecular ions, using lower electric field conditions as well as equal proportions of 12C and 13C. In these conditions and using another quantification method, we have shown that the carbon content in clusters approaches 50 at%. This result very likely indicates that clusters are nuclei of the SiC phase.

Published
2021
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40. Atom probe tomography quantification of carbon in silicon.

Author

Dumas P, Duguay S, Borrel J, Hilario F, and Blavette D

Abstract

Atom Probe Tomography (APT) was used to quantify carbon in implanted silicon at two various electric fields (~ 15 and 20 V/nm). Using equal proportions of implanted 12 C and 13 C, the numerous molecular ions that were observed were identified and their contribution to the carbon content statistically derived. Much more accurate carbon quantification was obtained in the lowest electric field analysis by comparing APT with Secondary Ion Mass Spectroscopy profiles. This was assigned to a lower amount of molecular ion dissociations. Furthermore, the number of self-interstitials trapped per carbon atom in clusters was derived. This value of interest for the microelectronics industry regarding dopant diffusion and implantation induced defects was estimated close to one, in agreement with the expected stoichiometry of the SiC phase present in the phase diagram. However, this was obtained only when using low electric field conditions., (Copyright © 2020. Published by Elsevier B.V.)

Published
2021
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41. Bicyclic azetidines kill the diarrheal pathogen Cryptosporidium in mice by inhibiting parasite phenylalanyl-tRNA synthetase.

Author

Vinayak S, Jumani RS, Miller P, Hasan MM, McLeod BI, Tandel J, Stebbins EE, Teixeira JE, Borrel J, Gonse A, Zhang M, Yu X, Wernimont A, Walpole C, Eckley S, Love MS, McNamara CW, Sharma M, Sharma A, Scherer CA, Kato N, Schreiber SL, Melillo B, Striepen B, Huston CD, and Comer E

Subjects
Animals, Diarrhea, Mice, Azetidines pharmacology, Cryptosporidiosis drug therapy, Cryptosporidium, Parasites, Phenylalanine-tRNA Ligase
Abstract

Cryptosporidium is a protozoan parasite and a leading cause of diarrheal disease and mortality in young children. Currently, there are no fully effective treatments available to cure infection with this diarrheal pathogen. In this study, we report a broad drug repositioning effort that led to the identification of bicyclic azetidines as a new anticryptosporidial series. Members of this series blocked growth in in vitro culture of three Cryptosporidium parvum isolates with EC 50 ' s in 1% serum of <0.4 to 96 nM, had comparable potencies against Cryptosporidium hominis and C. parvum , and was effective in three of four highly susceptible immunosuppressed mice with once-daily dosing administered for 4 days beginning 2 weeks after infection. Comprehensive genetic, biochemical, and chemical studies demonstrated inhibition of C. parvum phenylalanyl-tRNA synthetase ( Cp PheRS) as the mode of action of this new lead series. Introduction of mutations directly into the C. parvum pheRS gene by CRISPR-Cas9 genome editing resulted in parasites showing high degrees of compound resistance. In vitro, bicyclic azetidines potently inhibited the aminoacylation activity of recombinant Ch PheRS. Medicinal chemistry optimization led to the identification of an optimal pharmacokinetic/pharmacodynamic profile for this series. Collectively, these data demonstrate that bicyclic azetidines are a promising series for anticryptosporidial drug development and establish a broad framework to enable target-based drug discovery for this infectious disease., (Copyright © 2020 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works.)

Published
2020
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42. Copper-Catalyzed Oxyalkynylation of C-S Bonds in Thiiranes and Thiethanes with Hypervalent Iodine Reagents.

Author

Borrel J, Pisella G, and Waser J

Abstract

We report the oxyalkynylation of thiiranes and thietanes using ethynylbenziodoxolone reagents (EBXs) to readily access functionalized building blocks bearing an alkynyl, a benzoate, and an iodide group. The reaction proceeds with high atom efficiency most likely through an alkynyl-episulfonium intermediate. The transformation is copper-catalyzed and compatible with a large array of thiiranes and thietanes.

Published
2020
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43. The time-resolved and extreme conditions XAS (TEXAS) facility at the European Synchrotron Radiation Facility: the general-purpose EXAFS bending-magnet beamline BM23.

Author

Mathon O, Beteva A, Borrel J, Bugnazet D, Gatla S, Hino R, Kantor I, Mairs T, Munoz M, Pasternak S, Perrin F, and Pascarelli S

Abstract

BM23 is the general-purpose EXAFS bending-magnet beamline at the ESRF, replacing the former BM29 beamline in the framework of the ESRF upgrade. Its mission is to serve the whole XAS user community by providing access to a basic service in addition to the many specialized instruments available at the ESRF. BM23 offers high signal-to-noise ratio EXAFS in a large energy range (5-75 keV), continuous energy scanning for quick-EXAFS on the second timescale and a micro-XAS station delivering a spot size of 4 µm × 4 µm FWHM. It is a user-friendly facility featuring a high degree of automation, online EXAFS data reduction and a flexible sample environment.

Published
2015
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44. A new detector for sub-millisecond EXAFS spectroscopy at the European Synchrotron Radiation Facility.

Author

Kantor I, Labiche JC, Collet E, Siron L, Thevenin JJ, Ponchut C, Borrel J, Mairs T, Marini C, Strohm C, Mathon O, and Pascarelli S

Abstract

A new FReLoN (Fast-Readout Low-Noise) high-frame-rate detector adopted for the fast continuous collection of X-ray absorption spectra is presented. The detector is installed on the energy-dispersive X-ray absorption beamline ID24 at the ESRF and is capable of full time-resolved EXAFS spectra collection with over 4 kHz repetition rate and 0.2 ms exposure time. An example of the in situ kinetic study of the high-temperature oxidation of metallic iron is presented.

Published
2014
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45. An exchangeable Bragg/Laue polychromator for energy-dispersive XAFS.

Author

San-Miguel A, Hagelstein M, Borrel J, Marot G, and Renier M

Abstract

An original design for a cooled exchangeable polychromator for energy-dispersive XAFS (X-ray absorption fine structure) working either in the transmission configuration (Laue case) or in the reflection configuration (Bragg case) is presented. It enables the acquisition of X-ray absorption spectra between 5 and 25 keV with a spot size on the sample that can reach to less than 20 microm FWHM for some energies. Only 1 h is needed to exchange both benders in operative mode. Parallel transmission spectra with a bandpass between 5 and 10% can be obtained in the full energy range. The dispersive optics and mechanics of ID24 (ESRF, Grenoble, France) have been designed to obtain XAFS spectra in less than 1 s and, in some cases, in the millisecond range.

Published
1998
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46. Functional recovery of forelimb response capacity after forelimb primary motor cortex damage in the rat is due to the reorganization of adjacent areas of cortex.

Author

Castro-Alamancos MA and Borrel J

Subjects
Animals, Behavior, Animal physiology, Brain Mapping, Cerebral Cortex physiopathology, Electric Stimulation, Hindlimb physiology, Male, Motor Cortex physiopathology, Rats, Rats, Wistar, Ventral Tegmental Area physiology, Cerebral Cortex injuries, Forelimb physiology, Motor Cortex injuries, Nerve Regeneration physiology
Abstract

Functional recovery after brain damage has been described frequently and different mechanisms have been proposed to account for the observed recovery. One possible mechanism involves the capacity of one part of the brain to take over the function of another. A possible area for this to take place is in the cerebral cortex, where a variety of reorganizational processes have been described after different manipulations. We show in the present study that the forelimb force and response capacity of the rat, which becomes highly impaired after the bilateral ablation of the forelimb primary motor cortex, is recovered when the animals receive an electrical stimulation in the ventral tegmental nucleus contingent to each forelimb response in the task. Microstimulation mapping of the cortical areas adjacent to the forelimb primary motor cortex revealed the appearance of an area located caudolaterally to the forelimb primary motor cortex, where forelimb movements could be evoked in recovered animals but to a lesser extent in non-recovered animals. A positive and significant correlation was observed between the size of the reorganized forelimb area and the behavioral performance of the animals. Ablation of the forelimb reorganized area in recovered animals reinstated the forelimb behavioral impairment, while the same lesion in normal animals had no effect on the behavioral performance. The results indicate that recovery after bilateral forelimb primary motor cortex ablation may be due to the organization of specific adjacent areas in the cortex.

Published
1995
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47. PMR-relaxation and steric computations give unequivocal nucleoside conformations.

Author

Neumann JM, Borrel J, Thiery JM, Guschlbauer W, and Tran-Dinh S

Subjects
Magnetic Resonance Spectroscopy, Molecular Conformation, Structure-Activity Relationship, Pyrimidine Nucleosides
Abstract

The configuration and the conformation of alpha and beta anomers of pyrazomycin, cytidine and pseudouridine in aqueous solution have been investigated by 1H-NMR at 250 MHz. T1 proton relaxation measurements are an excellent method to determine the conformation of the base around the glycosidic linkage. Frequently, steric hindrance considerations can help to decide which conformations are possible in nucleoside anomer pairs. The proton-proton coupling constants indicate that the N conformer is largely predominant in the alpha anomers while the S conformer is particularly abundant in beta-pyrazomycin. The steric hindrance is much larger for alpha than for beta-nucleosides and change of a C-C to a C-N glycosidic bond reduces considerably the rotational possibilities of the base. The relaxation data show that alpha-cytidine adopts the anti conformation with gamma = 200 degrees in good agreement with the crystal structure and with the sterical computations. In the other case, when the syn and anti conformations are sterically accessible, the orientation of the base may be completely different from one nucleoside to the other. It can be predicted neither from the crystal structure nor from comparisons with similar compounds. For alpha-pseudo-uridine the predominant orientation of the base (gamma = 120 degrees) is in the boundary of the syn-anti regions; for beta-cytidine the syn (gamma = 65 degrees) and anti (gamma = 215 degrees) conformations are equiprobable at room temperature while beta-pseudouridine shows the syn conformation with gamma = 40 degrees, the smallest angle observed until now. There is no correlation between the N/S and syn-anti ratios.

Published
1977
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48. [Interactions between the immune system and the neuroendocrine system. Implications of the hypothalamo-hypophyseal-adrenal axis].

Author

Sandi C, Castro-Alamancos MA, Cambronero JC, Bailón C, Guaza C, and Borrel J

Subjects
Corticotropin-Releasing Hormone biosynthesis, Corticotropin-Releasing Hormone physiology, Glucocorticoids physiology, Humans, Interleukin-1 physiology, Lymphocytes physiology, beta-Endorphin biosynthesis, beta-Endorphin physiology, Hypothalamo-Hypophyseal System physiology, Immune System physiology, Pituitary-Adrenal System physiology, Stress, Psychological physiopathology
Abstract

The immune and neuroendocrine systems are now recognized to be linked and involved in bidirectional communication. That interrelationship involves shared usage of common signal molecules and their receptors. The Immune System and its products can modulate neuroendocrine functions and neuroendocrine peptides and hormones can affect important immunological parameters. Specifically, this article review the evidence for immune-neuroendocrine interactions in relation to the Hypothalamic-Pituitary-Adrenocortical axis. Neuroendocrine-immune interactions appears to play an important role in psychosocial influences on immunologically resisted and mediated diseases.

Published
1989

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