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Metal/insulator/semiconductor contacts for ultimately scaled CMOS nodes: projected benefits and remaining challenges

Authors :
Maud Vinet
H. Grampeix
Emmanuel Dubois
Magali Gregoire
Emmanuel Nolot
Yves Morand
Magali Tessaire
J. Borrel
Guillaume Rodriguez
Fabrice Nemouchi
Louis Hutin
Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI)
Direction de Recherche Technologique (CEA) (DRT (CEA))
Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN)
Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)
Université catholique de Lille (UCL)-Université catholique de Lille (UCL)
STMicroelectronics [Grenoble] (ST-GRENOBLE)
Jiang, YL
Qu, XP
Ru, GP
Li, BZ
Laboratoire commun STMicroelectronics-IEMN T4
Source :
16th International Workshop on Junction Technology (IWJT), ISBN (Print): 978-1-4673-9966-1; ISBN (Online): 978-1-4673-9965-4, IWJT 2016-16th International Workshop on Junction Technology, IWJT 2016-16th International Workshop on Junction Technology, May 2016, Shanghai, China. pp.14-19
Publication Year :
2016
Publisher :
HAL CCSD, 2016.

Abstract

International audience; In this paper, some key fundamental aspects of Metal / Insulator / Semiconductor contacts as well as practical issues occurring with their implementation are reviewed in order to fully comprehend the opportunities and limitations of this approach.

Details

Language :
English
ISBN :
978-1-4673-9966-1
978-1-4673-9965-4
ISBNs :
9781467399661 and 9781467399654
Database :
OpenAIRE
Journal :
16th International Workshop on Junction Technology (IWJT), ISBN (Print): 978-1-4673-9966-1; ISBN (Online): 978-1-4673-9965-4, IWJT 2016-16th International Workshop on Junction Technology, IWJT 2016-16th International Workshop on Junction Technology, May 2016, Shanghai, China. pp.14-19
Accession number :
edsair.doi.dedup.....46df74dc2edc6fe41eae0ee1424bcb11