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5. Composition-Graded AlInP/AlGaAsSb/InP Type-II DHBTs With fT/fMAX = \450/510\ \GHz.

Author

Xu, Huiming, Iverson, Eric W., Liao, Chi-Chih, Cheng, K. Y., and Feng, Milton

Subjects
HETEROJUNCTION bipolar transistors, MOLECULAR beam epitaxy, ELECTRIC fields, BAND gaps, LATTICE theory
Abstract

A type-II AlInP/AlGaAsSb/InP double heterojunction bipolar transistor (DHBT) with composition-graded Al content in the base is designed and grown by molecular beam epitaxy. Compared with composition-graded GaAsSb and InGaAsSb bases in DHBT, the graded AlGaAsSb base can generate a larger built-in electric field, thus reducing base transit time and improving device speed. We have fabricated AlGaAsSb graded base DHBTs and demonstrated fT/fMAX = \450/510\ \GHz for a \0.3 \times \2\ \mu\m^2 device. [ABSTRACT FROM PUBLISHER]

Published
2013
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