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15 results on '"Ishchuk, Valentyn"'

4. Profile simulation model for sub-50nm cryogenic etching of silicon using SF6/O2 inductively coupled plasma.

Author

Ishchuk, Valentyn, Olynick, Deirdre L., Zuwei Liu, and Rangelow, Ivo W.

Subjects
*SILICON analysis, *ANISOTROPIC crystals, *FLUORINE analysis, *SIMULATION methods & models, *TEMPERATURE measurements
Abstract

Cryogenic etching of silicon is a route to high aspect ratio silicon features with high mask selectivity and smooth sidewalls. These benefits have been realized even down to 10 nm half-pitch features. In this work, we develop a semi-empirical simulation model to understand mechanisms responsible for nanoscale profile evolution during plasma etching of silicon in SF6/O2 chemistry at cryogenic temperatures. The model parameters are first calibrated to the etching equipment using features from 500 nm to 2 µm. Using the calibrated model, we show the experimental finding that smaller features need more oxygen to achieve vertical anisotropic profiles. This is a consequence of two related effects: (1) the SiOxFy passivation layer sputtering yield is strongly dependent on the oxygen content at the feature sidewalls and (2) Knudsen transport within small features or higher aspect ratios depletes oxygen faster than fluorine due to the higher sticking coefficient of oxygen. The simulation was applied to 25 nm half-pitch features with excellent results. [ABSTRACT FROM AUTHOR]

Published
2015
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5. Charging effect simulation model used in simulations of plasma etching of silicon.

Author

Ishchuk, Valentyn, Volland, Burkhard E., Hauguth, Maik, Cooke, Mike, and Rangelow, Ivo W.

Subjects
*SIMULATION methods & models, *PLASMA etching, *SILICON, *GROUP 14 elements, *IONS
Abstract

Understanding the consequences of local surface charging on the evolving etching profile is a critical challenge in high density plasma etching. Deflection of the positively charged ions in locally varying electric fields can cause profile defects such as notching, bowing, and microtrenching. We have developed a numerical simulation model capturing the influence of the charging effect over the entire course of the etching process. The model is fully integrated into ViPER (Virtual Plasma Etch Reactor)-a full featured plasma processing simulation software developed at Ilmenau University of Technology. As a consequence, we show that local surface charge concurrently evolves with the feature profile to affect the final shape of the etched feature. Using gas chopping (sometimes called time-multiplexed) etch process for experimental validation of the simulation, we show that the model provides excellent fits to the experimental data and both, bowing and notching effects are captured-as long as the evolving profile and surface charge are simultaneously simulated. In addition, this new model explains that surface scallops, characteristic of gas chopping technique, are eroded and often absent in the final feature profile due to surface charging. The model is general and can be applied across many etching chemistries. [ABSTRACT FROM AUTHOR]

Published
2012
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6. Pattern-generation and pattern-transfer for single-digit nano devices

Author

Rangelow, Ivo W., Ahmad, Ahmad, Ivanov, Tzvetan, Kaestner, Marcus, Krivoshapkina, Yana, Angelov, Tihomir, Lenk, Steve, Lenk, Claudia, Ishchuk, Valentyn, Hofmann, Martin, Nechepurenko, Diana, Atanasov, Ivaylo, Volland, Burkhard, Guliyev, Elshad, Durrani, Zahid A. K., Jones, Mervyn E., Wang, Chen, Liu, Dixi, Reum, Alexander, Holz, Mathias, Nikolov, Nikolay, Majstrzyk, Wojciech, Gotszalk, Teodor, Staaks, Daniel, Dallorto, Stefano, Olynick, Deirdre L., Rangelow, Ivo W., Ahmad, Ahmad, Ivanov, Tzvetan, Kaestner, Marcus, Krivoshapkina, Yana, Angelov, Tihomir, Lenk, Steve, Lenk, Claudia, Ishchuk, Valentyn, Hofmann, Martin, Nechepurenko, Diana, Atanasov, Ivaylo, Volland, Burkhard, Guliyev, Elshad, Durrani, Zahid A. K., Jones, Mervyn E., Wang, Chen, Liu, Dixi, Reum, Alexander, Holz, Mathias, Nikolov, Nikolay, Majstrzyk, Wojciech, Gotszalk, Teodor, Staaks, Daniel, Dallorto, Stefano, and Olynick, Deirdre L.

Abstract

Single-electron devices operating at room temperature require sub-5 nm quantum dots having tunnel junctions of comparable dimensions. Further development in nanoelectronics depends on the capability to generate mesoscopic structures and interfacing these with complementary metal–oxide–semiconductor devices in a single system. The authors employ a combination of two novel methods of fabricating room temperature silicon single-electron transistors (SETs), Fowler–Nordheim scanning probe lithography (F-N SPL) with active cantilevers and cryogenic reactive ion etching followed by pattern-dependent oxidation. The F-N SPL employs a low energy electron exposure of 5–10 nm thick high-resolution molecular resist (Calixarene) resulting in single nanodigit lithographic performance [Rangelow et al., Proc. SPIE 7637, 76370V (2010)]. The followed step of pattern transfer into silicon becomes very challenging because of the extremely low resist thickness, which limits the etching depth. The authors developed a computer simulation code to simulate the reactive ion etching at cryogenic temperatures (−120 °C). In this article, the authors present the alliance of all these technologies used for the manufacturing of SETs capable to operate at room temperatures.

Published
2016

7. Scanning probe-based high-accuracy overlay alignment concept for lithography applications

Author

Ishchuk, Valentyn, primary, Guliyev, Elshad, additional, Aydogan, Cemal, additional, Buliev, Ivan, additional, Kaestner, Marcus, additional, Ivanov, Tzvetan, additional, Ahmad, Ahmad, additional, Reum, Alexander, additional, Lenk, Steve, additional, Lenk, Claudia, additional, Nikolov, Nikolay, additional, Glinsner, Thomas, additional, and Rangelow, Ivo W., additional

Published
2016
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8. Six-axis AFM in SEM with self-sensing and self-transduced cantilever for high speed analysis and nanolithography

Author

Angelov, Tihomir, primary, Ahmad, Ahmad, additional, Guliyev, Elshad, additional, Reum, Alexander, additional, Atanasov, Ivaylo, additional, Ivanov, Tzvetan, additional, Ishchuk, Valentyn, additional, Kaestner, Marcus, additional, Krivoshapkina, Yana, additional, Lenk, Steve, additional, Lenk, Claudia, additional, Rangelow, Ivo W., additional, Holz, Mathias, additional, and Nikolov, Nikolay, additional

Published
2016
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9. Large area fast-AFM scanning with active “Quattro” cantilever arrays

Author

Ahmad, Ahmad, primary, Nikolov, Nikolay, additional, Angelov, Tihomir, additional, Ivanov, Tzvetan, additional, Reum, Alexander, additional, Atanasov, Ivaylo, additional, Guliyev, Elshad, additional, Ishchuk, Valentyn, additional, Kaestner, Marcus, additional, Krivoshapkina, Yana, additional, Lenk, Steve, additional, Lenk, Claudia, additional, Rangelow, Ivo W., additional, and Holz, Mathias, additional

Published
2016
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10. Pattern-generation and pattern-transfer for single-digit nano devices

Author

Rangelow, Ivo W., primary, Ahmad, Ahmad, additional, Ivanov, Tzvetan, additional, Kaestner, Marcus, additional, Krivoshapkina, Yana, additional, Angelov, Tihomir, additional, Lenk, Steve, additional, Lenk, Claudia, additional, Ishchuk, Valentyn, additional, Hofmann, Martin, additional, Nechepurenko, Diana, additional, Atanasov, Ivaylo, additional, Volland, Burkhard, additional, Guliyev, Elshad, additional, Durrani, Zahid, additional, Jones, Mervyn, additional, Wang, Chen, additional, Liu, Dixi, additional, Reum, Alexander, additional, Holz, Mathias, additional, Nikolov, Nikolay, additional, Majstrzyk, Wojciech, additional, Gotszalk, Teodor, additional, Staaks, Daniel, additional, Dallorto, Stefano, additional, and Olynick, Deirdre L., additional

Published
2016
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12. Advanced electric-field scanning probe lithography on molecular resist using active cantilever

Author

Kaestner, Marcus, primary, Aydogan, Cemal, additional, Ivanov, Tzvetan, additional, Ahmad, Ahmad, additional, Angelov, Tihomir, additional, Reum, Alexander, additional, Ishchuk, Valentyn, additional, Krivoshapkina, Yana, additional, Hofer, Manuel, additional, Lenk, Steve, additional, Atanasov, Ivaylo, additional, Holz, Mathias, additional, and Rangelow, Ivo W., additional

Published
2015
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13. Advanced electric-field scanning probe lithography on molecular resist using active cantilever

Author

Kaestner, Marcus, additional, Aydogan, Cemal, additional, Lipowicz, Hubert-Seweryn, additional, Ivanov, Tzvetan, additional, Lenk, Steve, additional, Ahmad, Ahmad, additional, Angelov, Tihomir, additional, Reum, Alexander, additional, Ishchuk, Valentyn, additional, Atanasov, Ivaylo, additional, Krivoshapkina, Yana, additional, Hofer, Manuel, additional, Holz, Mathias, additional, and Rangelow, Ivo W., additional

Published
2015
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