Search

The peculiarities and modes of material modification with high-intensity, high-power density ion beams on the irradiated surface are studied for the first time. Chromium ions are implanted into a zirconium alloy using a 25 kW/cm2, 450 μs beam at the pulse repetition rates within 8–35 pps. Every high-energy ion pulse impact is followed by ultrafast cooling of the surface due to heat removal into the target material. Three modes are studied at the temperatures of 580, 700, and 900 °C with an additional pulsed heating. An increase in the average target temperature from 580 to 700 °C within 1 h at the same pulse power density allows increasing the depth of chromium ion alloying from 1.5 to more than 7 μm. The use of ultrafast cooling of the Zr1%Nb alloy surface offers a grain size reduction from a few μm to approximately 50–250 nm, without any microstructural changes throughout the sample volume. An inhomogeneous chromium ion distribution over the target surface and depth is observed. [ABSTRACT FROM AUTHOR]

The semiconductor industry is a resource-intensive sector that heavily relies on energy, water, chemicals, and raw materials. Within the semiconductor manufacturing process, the diffusion furnace, ion implantation machine, and plasma etching machine exhibit high energy demands or operate at extremely high temperatures, resulting in significant electricity consumption, which is usually carbon-intensive. To address energy conservation concerns, the industry adopts batch production technology, which allows for the simultaneous processing of multiple products. The energy-efficient parallel batch scheduling problem arises from the need to optimise product grouping and sequencing. In contrast to existing heuristics, meta-heuristics, and exact algorithms, this paper introduces the Deep Q-Network (DQN) algorithm as a novel approach to address the proposed problem. The DQN algorithm is built upon the agent's systematic learning of scheduling rules, thereby enabling it to offer guidance for online decision-making regarding the grouping and sequencing of products. The efficacy of the algorithm is substantiated through extensive computational experiments. [ABSTRACT FROM AUTHOR]

For many years, Si1−yGey alloys have been applied in the semiconductor industry due to the ability to adjust the performance of Si-based nanoelectronic devices. Following this alloying approach of group-IV semiconductors, adding tin (Sn) into the alloy appears as the obvious next step, which leads to additional possibilities for tailoring the material properties. Adding Sn enables effective bandgap and strain engineering and can improve the carrier mobilities, which makes Si1−x−yGeySnx alloys promising candidates for future opto- and nanoelectronics applications. The bottom-up approach for epitaxial growth of Si1−x−yGeySnx, e.g., by chemical vapor deposition and molecular beam epitaxy, allows tuning the material properties in the growth direction only; the realization of local material modifications to generate lateral heterostructures with such a bottom-up approach is extremely elaborate, since it would require the use of lithography, etching, and either selective epitaxy or epitaxy and chemical–mechanical polishing, giving rise to interface issues, non-planar substrates, etc. This article shows the possibility of fabricating Si1−x−yGeySnx alloys by Sn ion beam implantation into Si1−yGey layers followed by millisecond-range flash lamp annealing (FLA). The materials are investigated by Rutherford backscattering spectrometry, micro-Raman spectroscopy, x-ray diffraction, and transmission electron microscopy. The fabrication approach was adapted to ultra-thin Si1−yGey layers on silicon-on-insulator substrates. The results show the fabrication of single-crystalline Si1−x−yGeySnx with up to 2.3 at. % incorporated Sn without any indication of Sn segregation after recrystallization via FLA. Finally, we exhibit the possibility of implanting Sn locally in ultra-thin Si1−yGey films by masking unstructured regions on the chip, thus demonstrating the realization of vertical as well as lateral Si1−x−yGeySnx heterostructures by Sn ion implantation and flash lamp annealing. [ABSTRACT FROM AUTHOR]

Photo modulated optical reflectance (PMOR) is an ideal ultra-shallow junction area metrology technique for measurement of transistor dopant distribution in integrated circuit fabrication, and the characterization of process parameters such as implant energy, implant angle, and implant dose has a significant impact on the accuracy of the ion implantation process. This study utilized deep learning to analyze various process parameters concurrently and assessed its performance on boron-doped silicon samples, the data were obtained from the power curves measured from Carrier Illumination (CI) experiments in PMOR, a deep learning model with multi-task learning architecture was developed and trained to characterize multiple process parameters, and the PMOR model incorporating a multi-task learning architecture for process parameters demonstrated superior performance in terms of accuracy and speed of characterization. The analyses indicated that applying deep learning methods to CI metrology in PMOR technology is feasible. In particular, compared with the conventional carrier irradiation technique, the ability to obtain the implantation dose and doping profile along with other process parameters such as implantation energy, implantation angle, and implantation type can better assist in the accurate realization of the ion implantation process with acceptable accuracy and time cost. [ABSTRACT FROM AUTHOR]

An area-selectable Mg doping via ion implantation (I/I) is essential to realize gallium nitride (GaN) based power switching devices. Conventional post-implantation annealing forms considerable defects in the GaN, resulting in extremely low activation efficiency. The recent invention of ultrahigh-pressure annealing (UHPA) has substantially improved the p-type activation efficiency; however, the UHPA causes an unexpected Mg diffusion. Thus, both annealing processes resulted in a much lower Mg concentration in the GaN matrix than the Mg dose. In this study, the effect of a sequential N I/I for p-type Mg-implanted GaN was investigated by the correlative cathodoluminescence, transfer length method, scanning transmission electron microscopy, and atom probe tomography (APT) analyses. APT results have revealed that the sequential N I/I can successfully maintain the Mg concentration in the GaN matrix in the higher range of 1018 cm−3 or more. Our investigation suggests that sequential N I/I is a promising technique to maintain the Mg concentration higher and improve the p-type activation efficiency. [ABSTRACT FROM AUTHOR]

The manufacture of bipolar junctions is necessary in many 4H-SiC electronic devices, e.g., junction termination extensions and p + in diodes for voltage class > --> 10 kV. However, the presence of electrically active levels in the drift layer that act as minority charge carrier lifetime killers, like the carbon vacancy (V C), undermines device performance. In the present study, we compared p + n diodes whose anodes have been manufactured by three different methods: by epitaxial growth, ion implantation, or plasma immersion ion implantation (PIII). The identification of the electrically active defects in the drift layers of these devices revealed that a substantial concentration of V C is present in the diodes with epitaxial grown or ion implanted anode. On the other hand, no presence of V C could be detected when the anode is formed by PIII and this is attributed to the effects of strain in the anode region. Our investigation shows that PIII can be a useful technique for the manufacture of bipolar devices with a reduced concentration of lifetime killer defects. [ABSTRACT FROM AUTHOR]

The study of light-emitting defects in silicon created by ion implantation has gained renewed interest with the development of quantum optical devices. Improving techniques for creating and optimizing these defects remains a major focus. This work presents a comprehensive analysis of a photoluminescence line at a wavelength of 1240 nm (1 eV) caused by defects arising from the ion irradiation of the SiO2/Si system and subsequent thermal annealing. It is assumed that this emission is due to the formation of defect complexes WM with trigonal symmetry similar to the well-known W-centers. A distinctive feature of these defects is their thermal resistance up to temperatures of 800 °C and less pronounced temperature quenching compared to the W-line. The difference in the properties of these defect centers and W-centers can be explained by their different defect environments, resulting from the larger spatial separation between vacancies and interstitial atoms diffusing from the irradiated layer. This, in turn, is associated with the difference in the distribution of primary radiation defects during irradiation of the SiO2/Si system and silicon not covered with a SiO2 film. The patterns of changes in the WM line depending on various factors, such as the thickness of the SiO2 film, type of conductivity and impurity concentration in the original silicon, irradiation parameters, and annealing regimes, is studied and explained in detail. These findings demonstrate the benefits of this new approach when compared to previous methods. [ABSTRACT FROM AUTHOR]

In this work, nitrogen vacancy (NV) centers of high nitrogen diamond implanted with arsenic ions were investigated by photoluminescence spectroscopy. The transition of the NV center charge state was discussed by the regularly changing laser excitation power and measurement temperature following high-temperature annealing. After high-temperature annealing, the amorphous layer generated by arsenic ion implantation is transformed into a graphitization layer, resulting in a decrease in the NV yield. The electric neutral NV (NV0) center and negatively charged NV (NV−) center are affected by both radiation recombination and Auger recombination with increasing laser power. Accompanied by the increasing measurement temperature, the intensities of NV centers gradually decreased and eventually quenched. In addition, the charge states of NV− and NV0 centers were undergoing a transition. The zero phonon line positions of NV centers were also red shift, it was attributed to the dominant role of electron–phonon interaction in the temperature-dependent displacement of diamond energy gaps. The full width at half maxima of NV center were broadened significantly at higher temperatures. [ABSTRACT FROM AUTHOR]

A significant development toward semiconductor-based electronic devices is based on the electric and magneto-electric control of the transport properties of the charge carriers. This study unprecedentedly investigates the Ti implantation and thereafter the effect of structural defects on the electrical and magneto-electric transport properties of Ti-implanted RF-sputtered ZnO thin films. Theoretical stopping and range of ions in matter simulations along with the experimental structural and elemental studies reveal that Ti ion implantation generates a significant amount of oxygen vacancy (VO) defects apart from Ti-related impurities in post-implantation annealed films. The film implanted with 8 × 1015 ions/cm2 (TZO815) exhibits the lowest resistivity (4.68 × 10−3 Ω cm) and the highest carrier concentration (6.61 × 1020 cm−3) values. Resistivity measurements over a temperature range of 5-300K indicate semiconducting behavior for all the films implanted up to fluences of 5 × 1015 ions/cm2 identified with a grain boundary dominated thermally activated band, nearest neighbor hopping, and Mott and Efros–Shklovskii (ES) variable range hopping conduction mechanisms at various temperature intervals. Notably, the gradual decrease in both Mott and ES hopping ranges following Ti implantation indicates the formation of more localized states. Interestingly, the TZO815 film exhibits metal-semiconductor transition around 220 K, suggesting the formation of a degenerate band within the ZnO conduction band upon Ti implantation. Remarkably, the magnetoresistance results align with a semiempirical formula proposed by Khosla and Fischer, indicating that a negative magneto resistance in the TZO thin films is attributed to the spin-dependent scattering of conduction electrons by the localized magnetic moments induced mainly by the implantation induced VO defects. [ABSTRACT FROM AUTHOR]

In this work, we present a comprehensive re-evaluation of the iron–gallium (FeGa) recombination parameters in silicon using injection-dependent lifetime spectroscopy (IDLS). Ga-doped silicon wafers (of varying resistivities) with precise concentrations of intentional iron contamination in the silicon wafer bulk, through ion implantation and distribution, were used. The presence of interstitial Fei and FeGa, and their lifetime-limiting effects in these silicon wafers, were confirmed through measuring the effective minority carrier lifetime changes during the conditions that are known to cause FeGa dissociation and association. The presence of Fe was also confirmed by deep-level transient spectroscopy. To ensure accurate IDLS analysis of the FeGa defect in silicon, a lifetime linearization scheme was employed to effectively filter out interference by other defects. Error analysis was employed to find the combination of defect parameters that best fit the experimental data and to ascertain the range of uncertainty associated with the IDLS best-fit results. The optimal fitting of the experimental IDLS by Shockley–Read–Hall statistics produced an electron capture cross section σ n = 2.3 × 10 − 14 c m 2 , hole capture cross section σ p = 1.1 × 10 − 14 c m 2 , and a trap energy level E t = E V + 0.2 − 0.01 + 0.02 eV for the FeGa defect in silicon. The extracted defect parameters are also verified by experimentally measuring the crossover point of Fei and FeGa lifetime curves. [ABSTRACT FROM AUTHOR]

Hyperdoped silicon is a promising material for near-infrared light detection, but to date, the device efficiency has been limited. To optimize photodetectors based on this material that operate at room temperature, we present a detailed study on the electrical nature of gold-hyperdoped silicon formed via ion implantation and pulsed-laser melting (PLM). After PLM processing, oxygen-rich and gold-rich surface layers were identified and a wet etch process was developed to remove them. Resistivity and Hall effect measurements were performed at various stages of device processing. The underlying gold-hyperdoped silicon was found to be semi-insulating, regardless of whether the surface gold was removed by etching or not. We propose a Fermi level pinning model to describe the band bending of the transformed surface layer and propose a promising device architecture for efficient Au-hyperdoped Si photodetectors. [ABSTRACT FROM AUTHOR]

Most semiconductors exhibit a saturation of free carriers when heavily doped with extrinsic dopants. This carrier saturation or "doping limit" is known to be related to the formation of native compensating defects, which, in turn, depends on the energy positions of their conduction band minimum and valence band maximum. Here, we carried out a systematic study on the n-type doping limit of GaAs via ion implantation and showed that this doping limitation can be alleviated by the transient process of pulsed laser melting (PLM). For n-type doping, both group VI (S) and amphoteric group IV (Si and Ge) dopants were implanted in GaAs. For comparison, p-type doping was also studied using Zn as the acceptor. Implanted dopants were activated by the PLM method, and the results are compared to rapid thermal annealing (RTA). Our results reveal that for all n-type dopants, while implantation followed by the RTA results in a similar saturation electron concentration of 2–3 × 1018 cm−3, the transient PLM process is capable of trapping high concentration of dopants in the substitutional site, giving rise to a carrier concentration of >1019 cm−3, exceeding the doping limit of GaAs. However, due to scatterings from point defects generated during PLM, the mobility of n-type GaAs after PLM is low (∼80–260 cm2/V s). Subsequent RTA after PLM (PLM + RTA) is able to remove these point defects and recover the mobility to ∼1000–2000 cm2/V s. The carrier concentrations of these PLM + RTA samples are reduced but are still a factor of 3 higher than RTA only GaAs. This can be understood as the dopants are already incorporated in the substitutional site after PLM; they are less likely to be "deactivated" by subsequent RTA. This work is significant to the understanding of doping mechanisms in semiconductors and provides a means for device applications, which require materials with ultra-high doping. [ABSTRACT FROM AUTHOR]

RE-doped β-Ga2O3 seems attractive for future high-power LEDs operating in high irradiation environments. In this work, we pay special attention to the issue of radiation-induced defect anisotropy in β-Ga2O3, which is crucial for device manufacturing. Using the RBS/c technique, we have carefully studied the structural changes caused by implantation and post-implantation annealing in two of the most commonly used crystallographic orientations of β-Ga2O3, namely the (-201) and (010). The analysis was supported by advanced computer simulations using the McChasy code. Our studies reveal a strong dependence of the structural damage induced by Yb-ion implantation on the crystal orientation, with a significantly higher level of extended defects observed in the (-201) direction than for the (010). In contrast, the concentration and behavior of simple defects seem similar for both oriented crystals, although their evolution suggests the co-existence of two different types of defects in the implanted zone with their different sensitivity to both, radiation and annealing. It has also been found that Yb ions mostly occupy the interstitial positions in β-Ga2O3 crystals that remain unchanged after annealing. The location is independent of the crystal orientations. We believe that these studies noticeably extend the knowledge of the radiation-induced defect structure, because they dispel doubts about the differences in the damage level depending on crystal orientation, and are important for further practical applications. [ABSTRACT FROM AUTHOR]

RE-doped β-Ga2O3 seems attractive for future high-power LEDs operating in high irradiation environments. In this work, we pay special attention to the issue of radiation-induced defect anisotropy in β-Ga2O3, which is crucial for device manufacturing. Using the RBS/c technique, we have carefully studied the structural changes caused by implantation and post-implantation annealing in two of the most commonly used crystallographic orientations of β-Ga2O3, namely the (-201) and (010). The analysis was supported by advanced computer simulations using the McChasy code. Our studies reveal a strong dependence of the structural damage induced by Yb-ion implantation on the crystal orientation, with a significantly higher level of extended defects observed in the (-201) direction than for the (010). In contrast, the concentration and behavior of simple defects seem similar for both oriented crystals, although their evolution suggests the co-existence of two different types of defects in the implanted zone with their different sensitivity to both, radiation and annealing. It has also been found that Yb ions mostly occupy the interstitial positions in β-Ga2O3 crystals that remain unchanged after annealing. The location is independent of the crystal orientations. We believe that these studies noticeably extend the knowledge of the radiation-induced defect structure, because they dispel doubts about the differences in the damage level depending on crystal orientation, and are important for further practical applications. [ABSTRACT FROM AUTHOR]

Plasmonic nanoparticles enable manipulation and enhancement of light fields at deep subwavelength scales, leading to structures and devices for diverse applications in optics. Despite hybrid plasmonic materials display remarkable optical properties due to interactions between components in nanoproximity, scalable production of plasmonic nanostructures within a single‐crystalline matrix to achieve an ideal plasmon–crystal interface remains challenging. Here, a novel approach is presented to realize efficient manipulation of in‐lattice plasmonic nanoparticles. Employing ultrafast‐laser‐driven plasmonic nanolithography, metallic nanoparticles with controllable morphology are precisely defined in the crystalline lattice of yttrium aluminum garnet (YAG) crystal. Through direct ion implantation, hybrid plasmonic material composed of nanoparticles embedded in a sub‐surface amorphous YAG layer is created. Subsequently, femtosecond laser pulses guide formation and reshaping of plasmonic nanoparticles from the amorphous layer into the single‐crystalline matrix along direction of light propagation, facilitated by a plasmon‐mediated evolution of laser energy deposition. By tailoring resonance modes and optimizing the coupling between structured particle assemblies, a range of applications including polarization‐dependent absorption and nonlinearity, controllable photoluminescence, and structural color generation is demonstrated. This research introduces a new approach for fabricating advanced optical materials featuring in‐lattice plasmonic nanostructures, paving the way for the development of diverse functional photonic devices. [ABSTRACT FROM AUTHOR]

Though micro‐LED (light‐emitting diode) displays are considered the emerging display technology, the micron‐scale LED chip size encounters severe efficiency degradation that may impact the power budget of the displays. This work proposes an ion implantation method to deliberately create a high‐resistivity sidewall in the InGaN/GaN green LED. Our study demonstrates that ion implantation suppresses reverse leakage current due to the mitigation of sidewall defects. For an LED mesa size of 10 × 10 μm2, optical output power density is improved by 36.2% compared to the device without implantation. Compared to a larger 100 × 100 μm2 device without implantation, we achieve only 21.3% degradation of output power density under 10 A/cm2 injection for a 10 × 10 μm2 LED with implantation. In addition, the ion implantation method can lower the wavelength shift by reducing light emission from the region near the sidewall (where the amount of Indium [In] clustering differs from the mesa region). The results show promise in addressing the efficiency challenges of micro‐LED displays by selective ion implantation. [ABSTRACT FROM AUTHOR]

Titanium dioxide Nanowires (NWs) are particularly interesting because of their very high surface/volume ratio and their photocatalytic activity allows them to be used in a myriad of applications. This manuscript presents a study of nanowires grown on a conductive substrate making use of a seed-assisted thermal oxidation process. To obtain doped NWs, before the oxidation, metallic titanium was doped with Fe (or Cr) by ion implantation technology. Analyses showed good quality Rutile phase and light absorption in the visible range. Transport properties of the NWs/electrolyte junction were investigated by using linear sweep voltammetry and electrochemical impedance spectroscopy. They allowed us to measure the photovoltage and the barrier height of the junction. We also evaluated the density of hole trap states at the interface during illumination. Electrical results indicate that the formation of deep levels, induced by doping, influences the electron concentration in the TiO2 and the transport properties. [ABSTRACT FROM AUTHOR]

Anatase TiO2 nanoparticles (NPs) are pivotal in photocatalytic materials, as it is possible to precisely manipulate their composition, shape, and functionality toward different applications. This study presents a nondestructive method to implant cobalt(II) ions into anatase TiO2 NPs. Using trans-[Co(4-MePy)4Cl2] as a precursor, single-crystal XRD confirms its structure. The resulting adduct, ≡TiO2//[Co(4-MePy)4Cl2], facilitates electron transfer under UV light, releasing cobalt(I) which forms surface complexes. Subsequent re-oxidation by dissolved oxygen converts cobalt(I) back into Co(II), forming Co–TiO2 NPs. Unveiling a novel approach, this study introduces nondestructive implantation of cobalt(II) ions into anatase TiO2 nanoparticles, offering a breakthrough in advanced materials science. Through meticulous characterization and spectral analyses, the formation of surface-bound adducts and sub-surface grafting are elucidated, highlighting the unique interaction between cobalt complexes and TiO2. The resulting Co–TiO2 NPs exhibit exceptional photocatalytic activity under visible light and display intriguing weak ferromagnetic properties, showcasing their potential for multifaceted applications in photocatalysis and spintronics. This work represents a significant advancement in the synthesis and utilization of functionalized TiO2-based materials for photocatalytic application. [ABSTRACT FROM AUTHOR]

Due to its capacity to achieve nanometre-scale machining and lithography, a focused ion beam (FIB) is an extended tool for semiconductor device fabrication and development, in particular, for diamond-based devices. However, some technological steps are still not fully optimized for its use. Indeed, ion implantation seems to affect the crystalline structure and electrical properties of diamond. For this study, a boron-doped ([B] ∼ 1017 atoms·cm−3) diamond layer grown by chemical vapour deposition was irradiated using Ga+ by FIB, with 1 nA current and 5, 20, and 30 keV of acceleration voltage. The Ga+ implanted diamond layer has been analysed through cathodoluminescence (CL) and scanning transmission electron microscopy (STEM)-related techniques. The beam penetration depth has been simulated by Monte Carlo calculations of both Ga+ (FIB) and e− (CL) beams at different energies. The comparative CL analysis of the layer as-grown and after implantation revealed peaks related to defects, such as A band, H3 centre, and defects present in the green band region. The STEM studies for the 30 keV implanted sample showed that the diamond lattice is affected by the damage, evidencing amorphisation in the layer with a sp2/sp3 ratio of 1.37, estimated by electron energy loss spectroscopy. Therefore, this study highlights the effects of the Ga+ implantation on the optical and structural characteristics of diamond, using different methods. [ABSTRACT FROM AUTHOR]

This work studied the effect of sequential irradiation by krypton and helium ions at room temperature on the composition and structure of CoCrFeNi and CoCrFeMnNi high-entropy alloys (HEAs). Irradiation of the HEAs by 280 keV Kr14+ ions up to a fluence of 5 × 1015 cm–2 and 40 keV He2+ ions up to a fluence of 2 × 1017 cm–2 did not alter their elemental distribution and constituent phases. Blisters formed on the nickel surface after sequential irradiation, where large blisters had an average diameter of 3.8 μm. The lattice parameter of the (Co, Cr, Fe and Ni) and (Co, Cr, Fe, Mn and Ni) solid solutions increased by 0.17% and 0.37% after sequential irradiation, respectively. Irradiation by Kr ions led to a decrease in tensile macrostresses in the HEAs in the region of krypton ion implantation (Region I) and the formation of compressive macrostresses in the region behind the peak of implanted krypton (Region II). Sequential irradiation formed large compressive stresses in Ni and HEAs equal to −131.5 MPa, −300 MPa and −613.5 MPa in Ni, CoCrFeNi and CoCrFeMnNi, respectively, in the Region II. Irradiation by krypton ions decreased the dislocation density by 1.6–2.3 times, and irradiation with helium ions increased it by 11–15 times relative to unirradiated samples for CoCrFeNi and CoCrFeMnNi, respectively. Sequentially irradiated CoCrFeMnNi HEA had higher macrostresses and dislocation density than CoCrFeNi. [ABSTRACT FROM AUTHOR]

Ge‐rich Ge–Sb–Te alloy is a good candidate for future automotive applications due to its high crystallization temperature, which allows good data retention at elevated temperatures. Crystallization in this material is governed by elemental segregation which is key to thermal stability and device performance. In this work, elemental (Ge, Sb, Te) segregation is studied in situ during thermal annealing of Ge‐rich Ge–Sb–Te thin films using X‐ray fluorescence microscopy at ID16B beamline of ESRF with a beam size of 50 nm. Spatially resolved maps of Ge, Te, and Sb fluorescence yield are monitored and statistically analyzed as a function of temperature/time. In all investigated samples Sb appears to segregate much less than Te and Ge, indicating a lower mobility of this element. In situ, fluorescence mapping of samples doped with different amounts of carbon by ion implantation shows that carbon delays Ge and Te segregation to higher temperatures. Comparison with crystallization kinetics monitored by X‐ray diffraction shows a good correlation between the occurrence of spatially resolved chemical inhomogeneities and the appearance of crystallized phases. [ABSTRACT FROM AUTHOR]

In this study, two new structures are proposed for reverse-conducting insulated gate bipolar transistors (RC-IGBT) that effectively prevent snapback by relocating the N-collectors and utilizing silicon–germanium in the collector region of each device. The forward mode of the proposed structures shows IC− VC characteristics without snapback, since the position of the N-collector is changed to prevent electron extraction. In the reverse mode, the silicon–germanium induces currents through tunneling and impacts the ionization mechanisms. Importantly, the proposed structures generate a stable current value even if there are errors in the length of the N-collector during ion implantation, which enhances the reliability of the device. In addition, the proposed structures exhibit similar values for the breakdown voltage at around 700 V and the turn-on and turn-off losses when compared to the conventional RC-IGBT. Thus, this paper improves the reliability of RC-IGBTs by mitigating the snapback effect while maintaining their unique electrical properties. [ABSTRACT FROM AUTHOR]

Sensing based on Nitrogen‐Vacancy (NV) centers in nanodiamonds (NDs) represents a potentially groundbreaking technology with broad applications. Nevertheless, the optimization of their quantum‐optical properties is still a challenging issue. The present work aims at enhancing and controlling NV centers optical properties in NDs by combining their surface chemistry tuning and proton beam irradiation. Systematic thermal oxidations are carried out to study the evolution of surface chemical groups (IR spectroscopy), as well as their influence on optical properties (photoluminescence spectroscopy, PL decay measurements). Proton irradiation is performed by exploring a wide range of fluences (1014 – 1017 cm−2) in order to precisely control the amount of NV centers, thus defining the conditions that maximize their creation and emission intensity. In addition, NV centers charge state control is achieved by assessing NV−/NV0 ratio upon different surface termination tuning and NV centers amount. Finally, a novel predictive mathematical model is developed, allowing for the evaluation of the efficiencies of the formation of both NV− and NV0. Although the model is tested in the specific case study with proton irradiated NDs, it offers a broad applicability, thus representing a key landmark in the prediction of the outcome of ion‐beam‐based color centers generation in diamond. [ABSTRACT FROM AUTHOR]

Magnesium (Mg) and its alloys have received much attention in the aerospace, transportation, automotive industry, and military equipment fields due to their unique chemical and physical properties, such as their low density and high specific strength, particularly as the lightest structural metal materials, with the opportunity to achieve the design of lighter engineering systems. With the continuous improvement of processing technology, the application scope of magnesium alloy is rapidly expanding, and market demand is increasing. However, because of its significant electronegativity (2.37 V) and loose naturally formed oxide coating, magnesium has low corrosion resistance in comparison to other structural metal elements, severely limiting its large‐scale use. This review summarizes several typical anticorrosion methods for magnesium alloys, including chemical conversion coating treatment, anodic oxide film treatment, micro‐arc oxidation treatment, laser surface treatment, ion implantation, physical vapor deposition, and superhydrophobic coating. In most cases, the corrosion resistance of magnesium and its alloys has improved, but it has a certain degree of environmental damage. It is hoped that this review will contribute to further developing magnesium alloy materials in the field of preservative coating. [ABSTRACT FROM AUTHOR]

The low‐concentration boron doping is performed from 1016 to 1018 cm−3 by ion implantation into heteroepitaxially synthesized large‐area diamond and electrical properties are investigated. Photoluminescence analysis is first carried out to clarify the optical properties of the heteroepitaxial diamond substrate. As a result, defect complexes of nitrogen‐vacancy and silicon‐vacancy are hardly detected in this substrate, suggesting that optically high‐purity diamond can be accomplished by heteroepitaxial growth. Then, the electrical properties of resistivity, mobility, carrier concentration, and conductive type by Hall effect measurements are investigated. For the samples with doping concentrations higher than 1016 cm−3, the electrical activation of implanted B acting as acceptors is confirmed. The compensation ratio for the sample with 3.5 × 1017 cm−3 concentration reaches 76%, indicating the presence of compensating donor‐like centers. With increasing the doping concentration to 3.5 × 1018 cm−3, the compensation ratio is significantly reduced to 35%. The observed mobility of the higher doped sample takes almost the ideal value observed for the sample doped by chemical vapor deposition process. It is suggested that the heteroepitaxial synthesis of large‐area and high‐purity substrates should contribute to the further development of the application to electronic, optical, and sensing devices in the future. [ABSTRACT FROM AUTHOR]

In order to study the effect of impurity iron in different valence states on the coloration mechanism of quartz, colorless synthetic quartz fabricated via ion implantation and its natural counterpart citrine with iron were compared after heating under different atmospheres. Ultraviolet-visible spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy, electron paramagnetic resonance spectroscopy, and Fourier transform infrared spectroscopy were used to analyze the absorption property, valence states of iron, and type of O of both natural citrine and ion-implanted quartz. Experimental results showed the yellow color in quartz was mainly related to the charge transfer between Fe3+ and Fe2+, oxygen vacancies and the lattice oxygen, whereas the pink color in quartz was related to oxygen vacancies at a high temperature of 1200 °C. [ABSTRACT FROM AUTHOR]

The creation of SiV−, GeV−, and SnV− are presented by the atmospheric annealing in the argon flow. Compared to high‐pressure annealing, in which gas cannot flow, atmospheric annealing with an inert gas flow not only causes less degradation of the sample surface but also has the advantage of reducing equipment cost and preparation time. Excessive annealing time has been shown to reduce the amount of centers created. The optimal annealing time that maximizes formations depends on the type of diamond sample and the implanted ions. Furthermore, inspired by the split‐vacancy structure of the group IV–V centers, atmospheric pre‐annealing at 600 °C to increase the amount of di‐vacancy is demonstrated, followed by annealing at 1800 °C for 1 min. A shorter duration of high‐temperature annealing is expected to qualitatively reduce stress and deterioration of the crystallinity of the diamond sample. [ABSTRACT FROM AUTHOR]

Herein, high‐resistivity silicon substrates with specific He+ ion implantations to mitigate the parasitic surface conduction effect are studied. Several postimplantation thermal annealing conditions are investigated. Substrate performance is assessed at radiofrequencies (RFs) using the small‐signal characterization of coplanar waveguides (CPW) structures. The best effective resistivity (ρeff) of 4 kΩ cm is achieved with the wafer annealed at 600 °C for 2 h. This ρeff value is also stable as a function of DC bias applied to the CPWs. Those high RF performances originate from the nature of the defects created by ion implantation. Defects are deeply analyzed using spectroscopy measurement and scanning transmission electron microscopy. Combining these measurements, it is shown that {311} defects are probably responsible for the achieved high RF performances. Finally, the link between charge carriers trapping in the RF domain and defects nature is discussed to develop a defects engineering strategy for low‐loss RF substrates. The proposed fabrication method enables the fabrication of RF passivation layer locally over the wafer, and thus the cointegration of RF devices with fully depleted silicon‐on‐insulator technology. [ABSTRACT FROM AUTHOR]

In Mg ion implantation doping of GaN, sequential N ion implantation reportedly changes Mg concentrations in the Mg ion‐implanted region and the underlying region after activation annealing. The impact of sequential N ion implantation on defects and Mg distribution after postimplantation annealing is investigated. The atomic‐resolution analyses show that, in the Mg ion‐implanted region, the N ion implantation increases the concentration of MgGa. It is thus concluded that the Mg soluble in GaN by Mg ion implantation is increased by N ion implantation. The rest of the Mg atoms agglomerate to form clusters on the extended defects, and their concentration is also increased by the N implantation. The coarsening of extended defects is suppressed by the N ion implantation: the defects in the Mg+N‐implanted sample are nanoscale interstitial‐type defects, and they do not grow or annihilate after annealing. This indicates that the N implantation changes the concentrations of interstitials. [ABSTRACT FROM AUTHOR]

We studied the effect of femtosecond laser irradiation on the incorporation of n-type forming ions (phosphorus ions, P + and nitrogen ions, N+) into diamond. The (001) surface of a diamond crystal was irradiated by using a femtosecond laser to draw a zigzag pattern in two areas in which the spacing between irradiation lines was controlled to be 2 μm and 1 μm. One half of the crystal surface was P+-implanted and the other half was N+-implanted, both at 600 °C. Electron diffraction patterns obtained from thinned samples showed that the crystallinity of diamond was lost in the densely laser-irradiated area. For both ions, the ion concentration in the laser-irradiated area was higher than that in the nonirradiated area. The highest ion concentration ratio was approximately 5 for the P+-implanted region and greater than 10 for the N+-implanted region. These results support the idea that femtosecond-laser-induced surface modifications can enhance incorporation of n-type forming ions into diamond, with the effect varying according to ion mass. [ABSTRACT FROM AUTHOR]

A hypereutectic Ni alloy with 22 at. % Si was irradiated with a high-energy nickel ion beam and high ion fluence at 650°C to induce the formation of intrinsic and extrinsic point defects. Under these irradiation conditions, high concentrations of point defects were formed in the irradiated region. The recovery process initiated due to the damage induced by irradiation led to the formation of a nanoparticle population in the irradiated region. The irradiated region was characterized by high-resolution transmission electron microscopy (HRTEM), X-ray diffraction (XRD), and transmission electron microscopy (TEM). The experimental evidence obtained permitted the establishment of an event sequence that culminated in nanoparticle population formation. The event sequence had the following stages: (a) Ni atom population implantation within a specific zone of the irradiated region; (b) nucleation and growth of a Nickel-hexagonal phase due to ordering of the implanted nickel atoms; and (c) Ni-hexagonal phase nanoparticle growth within a specific region of the irradiated region. The HRTEM analysis yielded crucial insights into the mechanisms underlying nanoparticle formation. The two most important aspects are as follows: firstly, the nucleation of Nickel-hexagonal phase into an amorphous region, and secondly, the non-equilibrium nature of the Nickel-hexagonal phase of the Nickel metallic system. These experimental findings are important for implantation technology; implanting atomic species into certain materials to create composite materials can lead to the formation of non-equilibrium phases and amorphous regions. Both of these outcomes have the potential to adversely affect the properties of the composite material. [ABSTRACT FROM AUTHOR]

Nitrogen vacancy (NV) color centers in diamond have useful applications in quantum sensing and fluorescent marking. They can be generated experimentally by ion implantation, femtosecond lasers, and chemical vapor deposition. However, there is a lack of studies of the yield of NV color centers at the atomic scale. In the molecular dynamics simulations described in this paper, NV color centers are prepared by ion implantation in diamond with pre-doped nitrogen and subsequent annealing. The differences between the yields of NV color centers produced by implantation of carbon (C) and nitrogen (N) ions, respectively, are investigated. It is found that C-ion implantation gives a greater yield of NV color centers and superior location accuracy. The effects of different pre-doping concentrations (400–1500 ppm) and implantation energies (1.0–3.0 keV) on the NV color center yield are analyzed, and it is shown that a pre-doping concentration of 1000 ppm with 2 keV C-ion implantation can produce a 13% yield of NV color centers after 1600 K annealing for 7.4 ns. Finally, a brief comparison of the NV color center identification methods is presented, and it is found that the error rate of an analysis utilizing the identify diamond structure + coordination analysis method is reduced by about 7% compared with conventional identification methods. HIGHLIGHTS: • Homologous ion implantation can produce excellent nitrogen vacancy (NV) color centers. • Appropriate implantation parameters determine the quality of NV color centers. • A 13% yield of NV color centers can be realized at 2 keV C implantation. • Enhanced quality of NV color centers benefits quantum applications. [ABSTRACT FROM AUTHOR]

Direct synthesis of layer‐tunable and transfer‐free graphene on technologically important substrates is highly valued for various electronics and device applications. State of the art in the field is currently a two‐step process: a high‐quality graphene layer synthesis on metal substrate through chemical vapor deposition (CVD) followed by delicate layer transfer onto device‐relevant substrates. Here, we report a novel synthesis approach combining ion implantation for a precise graphene layer control and dual‐metal smart Janus substrate for a diffusion‐limiting graphene formation to directly synthesize large area, high quality, and layer‐tunable graphene films on arbitrary substrates without the post‐synthesis layer transfer process. Carbon (C) ion implantation was performed on Cu–Ni film deposited on a variety of device‐relevant substrates. A well‐controlled number of layers of graphene, primarily monolayer and bilayer, is precisely controlled by the equivalent fluence of the implanted C‐atoms (1 monolayer ~4 × 1015 C‐atoms/cm2). Upon thermal annealing to promote Cu‐Ni alloying, the pre‐implanted C‐atoms in the Ni layer are pushed toward the Ni/substrate interface by the top Cu layer due to the poor C‐solubility in Cu. As a result, the expelled C‐atoms precipitate into a graphene structure at the interface facilitated by the Cu‐like alloy catalysis. After removing the alloyed Cu‐like surface layer, the layer‐tunable graphene on the desired substrate is directly realized. The layer‐selectivity, high quality, and uniformity of the graphene films are not only confirmed with detailed characterizations using a suite of surface analysis techniques but more importantly are successfully demonstrated by the excellent properties and performance of several devices directly fabricated from these graphene films. Molecular dynamics (MD) simulations using the reactive force field (ReaxFF) were performed to elucidate the graphene formation mechanisms in this novel synthesis approach. With the wide use of ion implantation technology in the microelectronics industry, this novel graphene synthesis approach with precise layer‐tunability and transfer‐free processing has the promise to advance efficient graphene‐device manufacturing and expedite their versatile applications in many fields. [ABSTRACT FROM AUTHOR]

This study designs a system to precisely detect the angle of wafers on an ion implanter's electrostatic chuck (ESC). In specific ion implantation processes, ions may penetrate deeper than intended because of the channeling effect, compromising the device performance. To address this issue, the system adjusts the tilt of the ESC and the twist angles of the wafer to control the ion beam direction. Utilizing a camera-based machine learning system, the system identifies the wafer notch to ensure an accurate alignment of the ESC. However, factors such as insufficient lighting and vibrations affect notch detection, which can degrade image quality. To overcome these issues, this study explored various image-enhancement techniques and evaluated the performance of object detection algorithms on enhanced images. [ABSTRACT FROM AUTHOR]

Cadmium selenide (CdSe) represents a direct-bandgap semiconductor belonging to the II–VI group, operating within the visible range of the electromagnetic spectrum. Nanowires composed of CdSe hold significant potential for various optoelectronic applications. Employing ion implantation is an immensely appealing technique, which allows for a controlled introduction of dopants into any lattice, and it is based on well-established principles. In this context, the current investigation focuses on the impact of argon ion implantation on cadmium selenide nanowires with a diameter of 80 nm. The nanowires were synthesized via a template-assisted electrodeposition method using polycarbonate membranes with 80 nm pores and 10 µm thickness. A three-electrode setup facilitated their fabrication. Subsequently, argon ions with a 4+ charge state and an energy of 1 MeV were implanted into the synthesized nanowires at varying fluence levels, ranging from 1011 to 1013 ions/cm2. The ion implantation process was conducted in the radiation chamber of the Inter-University Accelerator Centre's low-energy ion implantation facility in New Delhi, India. Stopping and Range of Ions in Matter (SRIM) code simulations were employed to determine the optimal implantation parameters. Compositional analysis confirmed the successful incorporation of argon ions into the CdSe lattice. Notably, scanning electron microscopy revealed no alterations in the nanowire morphology despite the implantation. X-ray diffraction analysis showed no shift in the 2θ position of diffraction peaks, but indicated variations in their intensities. Furthermore, the implanted nanowires exhibited an increased absorbance and improved conductivity with increasing ion fluence. These findings demonstrate the effectiveness of argon ion implantation in modifying the optical and electrical properties of 80 nm diameter CdSe nanowires. [ABSTRACT FROM AUTHOR]

The current work investigates ion implantation of a transition metal (Ag) into MXene/TiO2 films utilizing low energy at different fluence rates of 5 × 1012, 5 × 1013, 5 × 1014, and 5 × 1015 ions-cm−2 respectively. The morphology and crystal structure of the transition metal-implanted MXene/TiO2 samples were characterized by field-emission scanning electron microscopy, x-ray diffraction, and Raman spectroscopy. In addition, x-ray photoelectron spectroscopy revealed the presence of Ag(I) oxidation state at 5 × 1014 ions-cm−2 fluence, whereas at a higher fluence of 5 × 1015 ions-cm−2, both Ag(I) and Ag(0) states were found. The optical properties of the transition metal-implanted MXene/TiO2 samples were also investigated via UV-visible and photoluminescence studies. The transition metal implantation significantly enhanced the light absorption and reduced the charge recombination owing to the formation of defect states. Finally, the quantum dot-sensitized solar cell (QDSSC) device fabricated with 5 × 1014 ions-cm−2 (Ag_3) exhibited the highest power conversion efficiency of 3.94% versus the unimplanted MXene/TiO2-based QDSSC (2.48%), which is attributed to enhanced absorption and minimization of charge recombinations, as confirmed by photovoltaic characteristics and Nyquist plots. [ABSTRACT FROM AUTHOR]

This study explores the enhancement of cupric oxide (CuO) thin films for photovoltaic applications through chromium doping and subsequent annealing. Thin films of CuO were deposited on silicon and glass substrates using reactive magnetron sputtering. Chromium was introduced via ion implantation, and samples were annealed to restore the crystal structure. The optical and structural properties of the films were characterized using X-ray diffraction, spectrophotometry, and spectroscopic ellipsometry. Results indicated that implantation reduced the absorbance and conductivity of the films, while annealing effectively restored these properties. Sample implanted with 10 keV energy and 1 × 1014 cm−2 dose of Cr ions, after annealing had sheet resistance of 1.1 × 106 Ω/sq compared to 1.7 × 106 Ω/sq for non implanted and annealed CuO. Study of crystalline structure confirmed the importance of annealing as it reduced the stress present in the material after deposition and implantation. Density Functional Theory (DFT) calculations were performed to investigate the electronic structure and optical properties of CuO with varying levels of chromium doping. Calculations revealed an energy gap of 1.8 eV for undoped CuO, with significant changes in optical absorption for doped samples. Energy band gap determined using absorbance measurement and Tauc plot method had value of 1.10 eV for as deposited CuO. Samples after implantation and annealing had energy band gap value increased to about 1.20 eV. The study demonstrates that chromium doping and subsequent annealing can enhance the optical and electronic properties of CuO thin films, making them more efficient for photovoltaic applications. [ABSTRACT FROM AUTHOR]

Lithium niobate (LiNbO3) exhibits poor radiation resistance when conventionally implanted with Er at room temperature. To repair the structural disorder, high‐temperature post‐implantation anneals are typically required; however, such treatments can cause sample cracking and dopant redistribution, which are incompatible with device applications. The optimized approach is proposed by performing implants at elevated but acceptably low temperatures to in situ minimize the structural defects generated in the collision cascades, via so‐called “dynamic defect annealing”. Thus, a gradual increase in Er optical activity is shown as a function of irradiation temperature in the range of 25–450 °C, in striking correlation with a decreasing trend for the residual disorder. The impact of moderate post‐implantation anneals is also investigated by comparing the results of anneals of samples implanted at 25 °C and 450 °C. This comparison further confirms the higher optical activation of Er and lower residual structural disorder when the material is initially implanted at elevated temperatures. Based on these data, it is concluded that the use of dynamic defect annealing during the Er implantation of LiNbO3 is a promising strategy for optimizing it as a quantum memory platform, resolving otherwise inevitable trade‐offs. [ABSTRACT FROM AUTHOR]

In recent years, research on hyperdoped semiconductors has accelerated, displaying dopant concentrations far exceeding solubility limits to surpass the limitations of conventionally doped materials. Nitrogen defects in silicon have been extensively investigated for their unique characteristics compared to other pnictogen dopants. However, previous practical investigations have encountered challenges in achieving high nitrogen defect concentrations due to the low solubility and diffusivity of nitrogen in silicon, and the necessary non-equilibrium techniques, such as ion implantation, resulting in crystal damage and amorphisation. In this study, we present a single-step technique called high-pressure gas immersion excimer laser doping (HP-GIELD) to manufacture nitrogen-hyperdoped silicon. Our approach offers ultrafast processing, scalability, high control, and reproducibility. Employing HP-GIELD, we achieved nitrogen concentrations exceeding 6 at% (3.01 × 1021 at/cm3) in intrinsic silicon. Notably, nitrogen concentration remained above the liquid solubility limit to ~1 µm in depth. HP-GIELD's high-pressure environment effectively suppressed physical surface damage and the generation of silicon dangling bonds, while the well-known effects of pulsed laser annealing (PLA) preserved crystallinity. Additionally, we conducted a theoretical analysis of light-matter interactions and thermal effects governing nitrogen diffusion during HP-GIELD, which provided insights into the doping mechanism. Leveraging excimer lasers, our method is well-suited for integration into high-volume semiconductor manufacturing, particularly front-end-of-line processes. [ABSTRACT FROM AUTHOR]

This study utilized ion implantation to modify the material properties of silicon carbide (SiC) to mitigate subsurface damage during SiC machining. The paper analyzed the mechanism of hydrogen ion implantation on the machining performance of SiC at the atomic scale. A molecular dynamics model of nanoscale cutting of an ion-implanted SiC workpiece using a non-rigid regular tetrakaidecahedral diamond abrasive grain was established. The study investigated the effects of ion implantation on crystal structure phase transformation, dislocation nucleation, and defect structure evolution. Results showed ion implantation modification decreased the extension depth of amorphous structures in the subsurface layer, thereby enhancing the surface and subsurface integrity of the SiC workpiece. Additionally, dislocation extension length and volume within the lattice structure were lower in the ion-implanted workpiece compared to non-implanted ones. Phase transformation, compressive pressure, and cutting stress of the lattice in the shear region per unit volume were lower in the ion-implanted workpiece than the non-implanted one. Taking the diamond abrasive grain as the research subject, the mechanism of grain wear under ion implantation was explored. Grain expansion, compression, and atomic volumetric strain wear rate were higher in the non-implanted workpiece versus implanted ones. Under shear extrusion of the SiC workpiece, dangling bonds of atoms in the diamond grain were unstable, resulting in graphitization of the diamond structure at elevated temperatures. This study established a solid theoretical and practical foundation for realizing non-destructive machining at the atomic scale, encompassing both theoretical principles and practical applications. [ABSTRACT FROM AUTHOR]

Magneto‐ionics relies on the voltage‐driven transport of ions to modify magnetic properties. As a diffusion‐controlled mechanism, defects play a central role in determining ion motion and, hence, magneto‐ionic response. Here, the potential of ion implantation is exploited to engineer depth‐resolved defect type and density with the aim to control the magneto‐ionic behavior of Co3O4 thin films. It is demonstrated that through a single implantation process of light ions (He+) at 5 keV, the magneto‐ionic response of a nanostructured 50 nm thick Co3O4 film, in terms of rate and amount of induced magnetization, at short‐, mid‐, and long‐term voltage actuation, can be controlled by varying the generated collisional damage through the ion fluence. These results constitute a proof‐of‐principle that paves the way to further use ion implantation (tuning the ion nature, energy, fluence, target temperature, or using multiple implantations) to enhance performance in magneto‐ionic systems, with implications in ionic‐based devices. [ABSTRACT FROM AUTHOR]

β-Ga2O3 is an ultra-wide bandgap semiconductor (Eg~4.8 eV) of interest for many applications, including optoelectronics. Undoped Ga2O3 emits light in the UV range that can be tuned to the visible region of the spectrum by rare earth dopants. In this work, we investigate the crystal lattice recovery of (2 ¯ 01) -oriented β-Ga2O3 crystals implanted with Yb ions to the fluence of 1 ×1014 at/cm2. Post-implantation annealing at a range of temperature and different atmospheres was used to investigate the β-Ga2O3 crystal structure recovery and optical activation of Yb ions. Ion implantation is a renowned technique used for material doping, but in spite of its many advantages such as the controlled introduction of dopants in concentrations exceeding the solubility limits, it also causes damage to the crystal lattice, which strongly influences the optical response from the material. In this work, post-implantation defects in β-Ga2O3:Yb crystals, their transformation, and the recovery of the crystal lattice after thermal treatment have been investigated by channeling Rutherford backscattering spectrometry (RBS/c) supported by McChasy simulations, and the optical response was tested. It has been shown that post-implantation annealing at temperatures of 700–900 °C results in partial crystal lattice recovery, but it is accompanied by the out-diffusion of Yb ions toward the surface if the annealing temperature and time exceed 800 °C and 10 min, respectively. High-temperature implantation at 500–900 °C strongly limits post-implantation damage to the crystal lattice, but it does not cause the intense luminescence of Yb ions. This suggests that the recovery of the crystal lattice is not a sufficient condition for strong rare-earth photoluminescence at room temperature and that oxygen annealing is beneficial for intense infrared luminescence compared to other tested environments. [ABSTRACT FROM AUTHOR]

P‐type hyperdoped germanium (Ge) has attracted significant attention for the development of superconducting semiconductors. However, the limited solid solubility of acceptors, especially boron (B), in Ge makes hyperdoping challenging. Herein, a systematic study on the electrical properties of boron‐implanted germanium is presented with an atomic concentration beyond 10 at%. The B‐implanted Ge was annealed by millisecond flash lamp annealing (ms‐FLA) with different parameters. The results indicate that millisecond solid phase epitaxy ensures the electrical activation of B much above the solubility limit with hole concentration as high as 2 × 1021 cm−3 and low‐temperature sheet resistance of 13 Ω sq−1 which is promising for superconductivity. It is also shown that millisecond annealing effectively suppresses the B diffusion and provides much higher activation efficiency of acceptors compared to conventional annealing methods. [ABSTRACT FROM AUTHOR]

Blood-contact devices are prone to inflammation, endothelial dysfunction, coagulation, and the uncontrolled release of metal ions during implantation and service. Therefore, it is essential to make these multifunctional. Herein, a superhydrophobic DE@ZnS-ZnO@SA film (composed of dabigatran ester, zinc sulfite, zinc oxide, and stearic acid, respectively) is produced. The prepared film has non-adhesion and antibacterial properties, superior mechanical stability, durability, corrosion resistance, and is self-cleaning and blood-repellent. The results of the hemolysis, cytotoxicity, and other anticoagulant experiments revealed that the film had good blood compatibility, no cytotoxicity, and excellent anticoagulant properties. The film displays anticoagulant properties even after being immersed in Phosphate-Buffered Saline (PBS) for 7 days. Furthermore, the film can spontaneously release H2S gas for 90 h after soaking in an acidic environment (pH = 6) for 90 h. This property improves the acidic microenvironment of the lesion and promotes the proliferation of endothelial cells by using H2S gas. In addition, the film can inhibit the uncontrollable release of Zn2+ ions, avoiding its toxicity even when immersed in an acid environment for 35 days. This time-sequential functionalized surface has the potential to typify the future of blood-contacting scaffolds for long-lasting use. [ABSTRACT FROM AUTHOR]

The aim of this article is to provide an analysis of the influence of the type of hard anti-wear coatings on the friction behaviour of DC01 deep-drawing steel sheets. DC01 steel sheets exhibit high formability, and they are widely used in sheet metal forming operations. The tribological properties of the tool surface, especially the coating used, determine the friction conditions in sheet metal forming. In order to carry out the research, this study developed and manufactured a special bending-under-tension (BUT) friction tribometer that models the friction phenomenon on the rounded edges of tools in the deep-drawing process. The rationale for building the tribotester was that there are no commercial tribotesters available that can be used to model the phenomenon of friction on the rounded edges of tools in sheet forming processes. The influence of the type of coating and sheet deformation on the coefficient of friction (CoF) and the change in the topography of the sheet surface were analysed. Countersamples with surfaces prepared using titanium + nitrogen ion implantation, nitrogen ion implantation and electron beam remelting were tested. The tests were carried out in conditions of dry friction and lubrication with oils with different kinematic viscosities. Under dry friction conditions, a clear increase in the CoF value, with the elongation of the samples for all analysed types of countersamples, was observed. Under lubricated conditions, the uncoated countersample showed the most favourable friction conditions. Furthermore, oil with a lower viscosity provided more favourable conditions for reducing the coefficient of friction. Within the entire range of sample elongation, the most favourable conditions for reducing the CoF were provided by uncoated samples and lubrication with S100+ oil. During the friction process, the average roughness decreased as a result of flattening the phenomenon. Under dry friction conditions, the value of the Sa parameter during the BUT test decreased by 20.3–30.2%, depending on the type of countersample. As a result of the friction process, the kurtosis and skewness increased and decreased, respectively, compared to as-received sheet metal. [ABSTRACT FROM AUTHOR]

Postsynthetic, position‐selective addition of properties to materials constitutes a paradigm shifting step in materials engineering. The approach enables creation of material systems inaccessible by equilibrium and near‐equilibrium synthesis and can be applied in novel practical applications as well as fundamental physics studies over a range of length and energy scales. Ion implantation is a versatile, scalable, industry‐compatible tool, enabling the next step in this development. Herein, ion implantation is used to design and functionalize a mesoscopic magnetic architecture. A self‐supporting mask is combined with implantation of 60 keV Fe ions to create an embedded array of ≈8 μm‐wide circular ferromagnetic regions in a Pd film. The approach is contactless, free from surface residues, and requires no focusing or scanning of the beam. Magnetic properties of the array are probed with longitudinal magneto‐optic Kerr effect measurement while varying sample temperature and applied magnetic field. Microstructures are visualized with Kerr microscopy and compared to the Fe distribution measured with microbeam proton‐induced X‐Ray emission. Sample topography after implantation is obtained by atomic force microscopy, while ion beam analysis is used to probe concentration depth profiles of implanted Fe, impurities, and to investigate material mixing. [ABSTRACT FROM AUTHOR]

In this paper, a proper noun "Region" is used for nm‐scale n‐type dopant‐rich region in p‐type Si crystal. Using this Region, certain solar cells have been assumed. By resonance absorption between photon energy and potential barrier of the Region, the cell can absorb most photons for visible light frequency without passing loss or thermal loss. This light absorption mechanism is different from conventional band gap absorption. Despite this benefit, output voltage is anticipated to decline according to the principle of detail balance. To control the decline, two methods are proposed in this paper. Theoretical energy conversion efficiencies for several cases are calculated with an ideal condition. The calculation result is over 70% as a theoretical value. [ABSTRACT FROM AUTHOR]

Copyright of Piezoelectrics & Acoustooptics is the property of Piezoelectric & Acoustooptic and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

Copyright of Piezoelectrics & Acoustooptics is the property of Piezoelectric & Acoustooptic and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)