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Effect of sequential N ion implantation in the formation of a shallow Mg-implanted p-type GaN layer.
- Source :
-
Journal of Applied Physics . 8/7/2024, Vol. 136 Issue 5, p1-7. 7p. - Publication Year :
- 2024
-
Abstract
- An area-selectable Mg doping via ion implantation (I/I) is essential to realize gallium nitride (GaN) based power switching devices. Conventional post-implantation annealing forms considerable defects in the GaN, resulting in extremely low activation efficiency. The recent invention of ultrahigh-pressure annealing (UHPA) has substantially improved the p-type activation efficiency; however, the UHPA causes an unexpected Mg diffusion. Thus, both annealing processes resulted in a much lower Mg concentration in the GaN matrix than the Mg dose. In this study, the effect of a sequential N I/I for p-type Mg-implanted GaN was investigated by the correlative cathodoluminescence, transfer length method, scanning transmission electron microscopy, and atom probe tomography (APT) analyses. APT results have revealed that the sequential N I/I can successfully maintain the Mg concentration in the GaN matrix in the higher range of 1018 cm−3 or more. Our investigation suggests that sequential N I/I is a promising technique to maintain the Mg concentration higher and improve the p-type activation efficiency. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 136
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 178879597
- Full Text :
- https://doi.org/10.1063/5.0216601