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Quantum dot (QD) color conversion layer (CCL) has been attracting interest due to their fascinating properties. The QD CCL with thickness of microns is required to successfully block blue light leakage. However, controlling the thickness profile in micro‐scale display pixels via the IJP remains a challenge. In this study, we controlled the surface energy of CCL by using CF4‐plasma treatment to control the thickness profile and improve the color conversion efficiency. Through mask‐free CF4‐plasma treatment, the bank became hydrophobic due to the fluorinated treatment, while the glass became hydrophilic due to the cleaning effect, selectively. [ABSTRACT FROM AUTHOR]

A 31-inch 4K flexible active-matrix organic light-emitting diode (AMOLED) display integrating with gate driver on the array (GOA) technology has been proposed and fabricated on a polyimide substrate. The GOA circuits, composed of two series-connected thin-film transistors (TFTs) and dual low-voltage power structure, are introduced to decrease the leakage current in TFTs. They are arranged symmetrically along the sides of the display. Inkjet printing (IJP) OLED process is used to reduce the number of sub-pixels from four (R/G/B/W) in commercial white OLED process to three (R/G/B) and a high pixel density in the display (144 pixels per inch) is achieved. Moreover, top-gated (TG) amorphous indium-gallium-zinc oxide (IGZO) TFTs with good electrical and mechanical reliability, have been successfully utilized to decrease the capacitance load in the display and improve signal transfer speed in GOA. Finally, this 31-inch flexible AMOLED display was operated for 500h under accelerating test conditions of 60°C and 90% humidity. [ABSTRACT FROM AUTHOR]

Metal–oxide–semiconductors (MOS) have become an ideal candidate for the next-generation optoelectronic device applications. However, high processing temperature and complicate processes are still tremendous challenge in developing solution-based complementary MOS (CMOS) inverter. In this article, for the first time, femtosecond (fs) laser was used to realize controllable annealing for solution-based CMOS inverter. The achievement of nonstoichiometric p-type oxide thin films was ascribed to the photo-assisted conversion of precursor to metal–oxide (M–O) lattices along with the formation of atom vacancies in oxide lattice due to carrier excitation and relaxation using laser annealing (LA). The field effect mobility of the p- and n-type M–O thin-film transistors (TFTs) with inkjet printing (IJP) and LA was 0.91 and 7.07 cm2/ $\text{V}\cdot \text{s}$ , respectively. Moreover, location control capacity was exploited to separately anneal the p- and n-type oxide deposited with IJP for the fabrication of TFTs, which significantly simplified the fabrication process of the inverter. CMOS inverter with high noise margin and moderate voltage gain above 10 was also obtained. Our work significantly improved the ability to selectively manipulate the functionality and properties of the irradiated materials. The results demonstrated that logic gates based on all-oxide can be large area integrated using our strategy, exhibiting attractive properties and applications of the CMOS integrated circuits in oxide electronics. [ABSTRACT FROM AUTHOR]

Inkjet printing (IJP) is a versatile technique for realizing high-accuracy patterns in a cost-effective manner. It is considered to be one of the most promising candidates to replace the expensive thermal evaporation technique, which is hindered by the difficulty of fabricating low-cost, large electroluminescent devices, such as organic lightemitting diodes (OLEDs) and quantum dot light-emitting diodes (QLEDs). In this invited review, we first introduce the recent progress of some printable emissive materials, including polymers, small molecules, and inorganic colloidal quantum dot emitters in OLEDs and QLEDs. Subsequently, we focus on the key factors that influence film formation. By exploring stable ink formulation, selecting print parameters, and implementing droplet deposition control, a uniform film can be obtained, which in turn improves the device performance. Finally, a series of impressive inkjet-printed OLEDs and QLEDs prototype display panels are summarized, suggesting a promising future for IJP in the fabrication of large and high-resolution flat panel displays. [ABSTRACT FROM AUTHOR]

Microelectronic devices have great potential to be integrated into the Internet of Things, bringing benefits to the environment, society, and economy. Especially, microscaled chemical sensors for environmental monitoring are of great interest since they can be manufactured by cost, time, and resource efficient inkjet printing technology. The aim of the present literature review is a reflection of state-of-the-art inkjet-printed chemiresistive sensors. It examines current material approaches used to realize printed chemiresistors, especially the challenges in the realisation of accurate electrode patterns as well as the deposition of various sensing materials by inkjet printing technology. The review will be completed by an overview of current research activities dealing with the integration of chemiresistive sensors into wireless applications. The result of this review confirms that during the last decades, the number of publications covering inkjet-printed chemical, especially chemiresistive, sensors and their introduction into the Internet of Things is growing. Furthermore, it reveals the need for further research regarding material science and printing technology compatibility to achieve reliable and reproducible chemiresistive sensors.

Abstract: In this work, inkjet printing (IJP) of sol-gel precursor ink of zinc oxide (ZnO) has been carried out; with the focus placed on studying the relationship between IJP parameters and pattern morphology. The unique ‘coffee ring’ morphology, despite often considered as undesirable, was intelligently utilized for improving thin film transistor performance. Furthermore, inkjet printed ZnO patterns were employed as seed layers for hydrothermal growth of ZnO nanorod. The critical influence of ‘coffee ring’ morphology towards heterogeneous nucleation and crystallization behavior of ZnO nanorod was studied. Different morphologies of ZnO nanorods on specific regions of seed layers were elucidated based on non-uniform surfactant distribution. This work underlines the opportunity of utilizing the unique inkjet printed pattern morphology in fabrication of nano-scale ultra-smooth thin film devices with controlled distribution of variable ink components. [Copyright &y& Elsevier]

Microelectronic devices have great potential to be integrated into the Internet of Things, bringing benefits to the environment, society, and economy. Especially, microscaled chemical sensors for environmental monitoring are of great interest since they can be manufactured by cost, time, and resource efficient inkjet printing technology. The aim of the present literature review is a reflection of state-of-the-art inkjet-printed chemiresistive sensors. It examines current material approaches used to realize printed chemiresistors, especially the challenges in the realisation of accurate electrode patterns as well as the deposition of various sensing materials by inkjet printing technology. The review will be completed by an overview of current research activities dealing with the integration of chemiresistive sensors into wireless applications. The result of this review confirms that during the last decades, the number of publications covering inkjet-printed chemical, especially chemiresistive, sensors and their introduction into the Internet of Things is growing. Furthermore, it reveals the need for further research regarding material science and printing technology compatibility to achieve reliable and reproducible chemiresistive sensors. [ABSTRACT FROM AUTHOR]