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We aim to investigate the potential of four different organic solvents, namely, acetone, ethanol, methanol, and isopropanol, and the organic-solvent-water mixtures as a seeding medium for the two-line atomic fluorescence technique. Water is used as the reference case. Indium, which has been previously shown to have suitable spectroscopic attributes, is chosen as the thermometry species in the present study. Acetone and methanol are shown to enhance the fluorescence signal intensity the most (approximately threefold to fivefold at stoichiometric conditions) when used. Acetone and methanol are shown to improve the fluorescence emission over the entire stoichiometric envelope of flame, most significantly in the rich combustion region, as well as a twofold enhancement in the signal-to-noise ratio. OCIS codes: 120.1740, 120.6780, 300.2530.

An optical structure called a single photon horn (SPH) is used to show high-performance single-photon emission with extraction efficiency of 11 percent. The results have shown that SPH has possibilities of achieving the operating frequency of over 100 MHz.

Experiments are conducted to show that scanning tunneling spectroscopy (STS) images of semiconductor quantum dots display clear signatures of electron-electron correlation. The wave-function sequence is described in terms of images of one- and two-electron states by comparing measured STS images of freestanding InAs quantum dots with those calculated by the full configuration interaction method.

Single InAs quantum dots embedded in a planar cavity can be used as a source of triggered polarization-entangled photon pairs. The control of the polarization splitting is demonstrated by using growth or magnetic fields, thus enabling triggered entangled photon pair emission from dots with zero fine structure splitting.

The cross-sectional scanning tunneling microscopy is used to study the impact of the capping material on the structural properties of self-assembled InAs quantum dots (QDs) at the atomic scale. The results have shown that the dot/capping layer strain plays a major role in inducing dot decomposition during capping.

Low-temperature scanning tunneling microscopy and low-temperature scanning tunneling spectroscopy (LT-STS) are used to investigate the local density of states (LDOS) of InAs/GaSb long period superlattices on the cleaved (110) surface at atomic resolution. The results have shown vivid standing waves in LDOS that are corresponding to the single quantum well-like subband confined in the InAs layer.

A systematic and comprehensive computational study of the electronic structure of GaN and InN surfaces in various orientations is reported. All the surface states for polar InN that are located above the conduction-band minimum are found and the source of the intrinsic electron accumulation that is universally observed in InN surfaces is explained.

A study was conducted to investigate the role of thermal instability and In surface coverage on the growth kinetics for N-face InN films grown by plasma-assisted molecular beam epitaxy. Smooth step-flow growth terraces were observed in films grown under In-rich and N-rich conditions at temperature of thermal decomposition which resulted from the reflection high energy electron diffraction patterns during the consumption of adsorbed In by active nitrogen.

The optical properties of InAs/GaAs quantum well (QW) structures were studied by photoreflectance (PR) modulation spectroscopy, photoluminescence (PL) and atomic force microscopy. The transitions connected with a thin InAs/GaAs QW are visible for all samples.

A study was conducted to investigate the formation of compositional modulation and atomic ordering in InGaP films. The results indicate that the surface diffusion is the main driving mechanism for compositional modulation on InGaP films grown by CBE and surface reconstruction shows a strong effect on both compositional modulation and the Cu[Pt.sub.[beta]] atomic ordering phenomena.

The tip artifact in atomic force microscopy (AFM) observations of InAs islands, which are grown in the Stranski-Krastanow mode of molecular beam epitaxy, is evaluated. The results have helped in determining the actual size of the islands from their AFM images.

An experimental investigations of the two-photon absorption diagonal tensor components of the In(sub 2)O(sub 3) nanocrystals versus temperature were carried out. The results determined that, below 40 K, an enhancement of the corresponding two-photon absorption coefficients for the samples with low nanocrystal sizes (below 24 nm) occurred.

A study relating device performance and carrier escape sequence in a large set of InAsP/InP p-i-n multi-quantum-well solar cells is presented. InP/InAsP multi-quantum-well solar cells with high built in electric field and fast electronic escape time display better open circuit voltage and performance.

Effects of growth temperature on 2.3 mum thick N-polar InN films grown on GaN template at 440-620 degree Celsius by plasma-assisted molecular beam epitaxy is investigated. It is found that different growth behaviors depending on the growth temperatures greatly influence surface morphology and results indicate that the epitaxial temperatures of 540-600 degree Celsius are the best to achieve high quality InN films with a smooth surface.

A thin six-walled structure consisting of InGaN/GaN layers in the V defects using HAADF-STEM and field-emission gun scanning electron microscopy (FEG-SEM) imaging is observed. A formation mechanism for the V defects is proposed taking into account the growth kinetics of GaN and the segregation of In atoms in the strain field around the cores of the threading dislocations.

The chemical and electronic properties of tin-doped indium oxide (ITO) surfaces and its interface with zinc phthalocyanine (ZnPc) are examined using photoelectron spectroscopy partly excited by synchrotron radiation from the BESSY II storage ring. It is demonstrated that ITO surfaces can display large Fermi level shifts depending on substrate preparation.

A new cobalt-indium silicate, Rb6(InCo)(sub 2)(Si9O28), is synthesized via a hydrogen-temperature, high-pressure hydrothermal method and characterized by single-crystal X-ray diffraction. The Si:O ratio of the silicate layer is the lowest among the known single-layer silicates and magnetic susceptibility has confirmed the divalent state of the cobalt ion.

A technique based on electrostatic force microscopy in which light is used to change the charge states of the local region in a solid is introduced and demonstrated. This technique provides a unique feature that it could be used to probe local electronic transitions of a solid in a submicron scale and it is also applied to study the local electronic structure in InN epifilms.

The influence of several growth parameters like coverage, the AsH(sub 3) flow (V/VII ratio) and growth interrupts on the self-assembled growth InAs/GaAs quantum dots (QDs) by metal organic chemical vapor deposition is described. It is seen that the AsH(sub 3) flow has a particularly large impact, both during and after dot nucleation while it is suggested that these effects are due to an enhanced redistribution of indium from the wetting layer to the islands and possibly between the islands as well.

Growth mechanism of In-rich InGaN/GaN quantum wells (QWs) was investigated. Introduction of growth interruption before GaN capping made the growth of high quality InGaN layer possible in In rich lnGaN/GaN QW structures.

The atomic scale morphology of InAs/GaAs quantum dots (QDs) capped with InGaAs layers of different thickness were studied using in situ scanning tunneling microscopy (STM) and compared to the effects of capping with a pure GaAs layer. The planar morphology is a consequence of enhanced In adatom diffusion on the InGaAs alloy surface.

The emission behavior of binary-binary type-II InAs/GaSb superlattice photodiodes was studied in the spectral range between 8 to 13 mum. By evaluating the temperature dependence of the internal quantum efficiency of the radiative process, the Auger coefficient for n-type superlattice materials could be determined where the signature of an Auger-limited low-gap diode was seen as strong decrees of the internal quantum efficiency with increasing injection current.

The incorporation of S into CuInSe(sub 2) single crystals was studied by reaction in an H(sub 2)S atmosphere modeled by a surface reaction that exchanges S and Se at the crystal surface and by diffusion in the crystal lattice. It was found that the incorporation of S is governed by a binary interdiffusion process.

The photodissocation dynamics of NaI(H20)(sub n) [n=1-4] clusters is investigated using the molecular dynamics with quantum transitions method. The simulation results show that the NaI(H2O) excited-state population decay upon reaching the NaI curve-crossing region increases with cluster size due to the stabilization of the ionic branch of the NaI excited state by surrounding water molecules, and the resulting increase in nonadiabatic transition probability.

The synthesis and electrochemical analysis of [1.1]ferrocenophanes with bridging elements Al, Ga, and In are described. These display distinctively different electrochemical behavior, as revealed by cyclic voltammetry.

The structural and electrical characterization of Cu(In, Ga)Se2 thin films and thin-film solar cells realized with different Cu contents in the absorber material is presented. It is shown that the bulk resistivity of the Cu(In, Ga)Se2 thin films dramatically increase with decreasing Cu content.

The surface modification and the surface roughness of the InP(111) surfaces after 1.5 MeV Sb ion implantations are studied. The formation of nanoscale defect structures is observed on the InP surface.

Capacitance-voltage and admittance spectroscopy is used to investigate the effect of incorporating an InAlAs layer before an InGaAs cap layer on electron emission in self-assembled InAs quantum dots (QDs). This incorporation of a high potential barrier increases the emission time of the electrons thermally activated from the QD ground to the first excited state.

Different theoretical approaches are adopted to understand the size-dependent band gap including the effective-mass approximation with infinite or finite confinement potentials, tight-binding method, the linear combination of atomic orbitals method and the empirical pseudopotential method. The size-dependent band gap of colloidal quantum dots is calculated using a method that predicts accurately the eigenstates and eigenenergies of nanostructures by utilizing the adiabatic theorem of quantum mechanics.

Experimental results and possible explanations will be presented on how substrate temperature and air annealing influence the interface between Cu(In, Ga)Se2 (CIGS) and powder evaporated In(sub x)S(sub y). These interfaces are studied by means of bright-field and high-resolution transmission electron microscopy.

The results of multimillion-atom parallel molecular dynamics simulations performed to investigate the lattice-misfit-induced stress relaxation in nanometer-sized rectangular GaAs mesas covered with InAs overlayers of 12-ML thickness. The conclusions regarding the stress relaxation mechanism are hydrostatic stress observed in the mesa systems of different geometries.

Effective masses of holes in In(sub 0.36)Ga(sub 0.64)As(sub 1-x)N(sub x)/GaAs quantum well structures were determined and analyzed. The result shows that significant variation in the effective masses is possible by adjusting the relevant parameters.

The study present the results of incorporating N into self-assembled InAs quantum dots (QDs) capped with an InGaAs cap layer. Experimental results indicate that such incorporation can redshift the QD ground state and decrease the energy spacing between the QD ground and first excited states.

Reflection high-energy electron diffraction measurements of the critical thickness for quantum dot (QD) formation are used to quantify the effects of indium segregation and strain on the growth of bilayer InAs/As(001) QD structures. Compared with segregation strain from the buried QDs can be measured through significantly larger capping thicknesses under these conditions.

The formation of a two-dimensional electron gas (2DEG) in AlInGaN/GaN heterostructures is studied using Hall mobility and temperature-dependent photoluminescence (PL) spectroscopy and the effect of Al composition of the optical transitions of the 2DEG formed at AlInGaN/GaN interfaces are discussed. It is observed that the generation of misfit dislocations and surface pits leads to a reduced sheet carrier concentration and mobility.

InAs quantum dots (QD's) grown by molecular-beam epitaxy on GaAs(001) substrates are studied by atomically resolved in situ scanning tunneling microscopy. A detailed sequence of shapes, appearing during the growth process is evaluated.

A study was conducted to observe the terahertz emission from InGa/As/InAlAs lattice-matched high electron mobility transistors. The results showed that the emission appears in a threshold-like manner when the applied drain-to-source voltage U(sub DS) is larger than a threshold value U(sub TH).

Studies were carried out by using Hall-effect, van der Pauw, and relaxation-time measurements on the electrical and optical properties of H(super +)- and Au(super +)-irradiated InGaAs layers. The different results obtained can be compared and would help one to obtain information on the nature of the defects created by these two irradiations.

The growth of strained InxGa(1-x)As alloys on InP by gas source molecular-beam epitaxy in the 350-500 degree Celsius range was studied. The influence of the gas structure design on the electron mobility which reaches 16000 and 139000 cm(super 2)/Vs at 300 and 77K, respectively, with a corresponding Ns of 8.5*10(super 11) cm(super -2) for an optimized structure was the best reported for the InGaAs/InAIAs system.

The feasibility of compensating the bulk inversion asymmetry in a [111]-oriented quantum well is investigated. A detailed numerical study of the spin splitting in a suitable InAlAs/InGaAs/InP quantum well grown on a [111] InP substrate is discussed.

Structural stabilization among the three compounds namely K34In92.30Li2.70, K14Na20In91.82Li13.18 and K14Na20In96.30 reveals an intimate relationship between structure and valence electron requirements. The electronic tuning within the complicated network structure is realized by substitution of part of the iridium by electron-poorer lithium atoms.

The initial growth mode of indium tin oxide on polycarbonate (PC) substrates is investigated. The change of the growth mode was attributed to oxygen-bound functional groups newly formed on the PC surface and models based on thermodynamic theory and on atomic kinetic approach are presented to explain the transition.

Epitaxial growth of In(sub x)Ga(sub 1-x)N alloys on GaN(0001) by plasma assisted molecular-beam epitaxy is studied using the in-situ reflection high-energy electron diffraction (RHEED) technique. An apparent decrease in the oscillation frequency by adding some In is attributed to the gradual dominance of the step-flow growth mode.

The modification of the electronic properties of InSb by implantation of low-energy N(sub 2)(super +) ions and annealing are investigated. A non-uniform electron density depth profile is observed in the near-surface region.

Fundamental issues relating the symmetry of the shape and the nonuniform composition of InGaAs quantum dot islands are addressed. Using atomistic simulations in the framework of the Tersoff empirical potential, the effect of compositional gradients in the In distribution on the piezoelectric effect in quantum dots is studied.

Electrodeposited poly(phenylene oxide) films generated on ITO substrates are ultrathin and pinhole free. The study demonstrates that pinhole-free nanometer-thick solid polymer electrolytes are achievable.

A model potential for GaAs(100) and InAs (100) surface atoms is developed and surface reconstructions on GaAs(100) and InAs(100) are discussed with the conjugate gradient (CG) method. Surface energies of the GaAs and InAs for the (110) and (111) orientations are also calculated with MD and CG methods.

The charge storage effect of the InAs nanodots with different size distribution is studied by using an Al0.5Ga0.5As/GaAs Fe structure. The number of stored electrons per dot is approximately 25, independent of the dot-size distribution, and the amount of stored charge per area increased with dot density.

The correlation of evolution of end-of-range (EOR) damage and transient enhanced diffusion (TED) of indium is investigated by secondary ion mass spectrometry and transmission electron microscopy. The diffusion system that contains three types of EOR defects with the initial damage distribution obtained from Monte Carlo simulation is applied to indium TED.

InGaAs (InAs)/GaAs quantum wells (QWs) are grown by molecular beam epitaxy (MBE) to investigate the dependence of indium surface segregation on step structures. Different broadening of the InGaAs QW between [001]- and [011]-stepped surface is attributed to anisotropic surface segregation.