The role of arsine in the self-assembled growth of InAs/GaAs quantum dots by metal organic chemical vapor deposition

The influence of several growth parameters like coverage, the AsH(sub 3) flow (V/VII ratio) and growth interrupts on the self-assembled growth InAs/GaAs quantum dots (QDs) by metal organic chemical vapor deposition is described. It is seen that the AsH(sub 3) flow has a particularly large impact, both during and after dot nucleation while it is suggested that these effects are due to an enhanced redistribution of indium from the wetting layer to the islands and possibly between the islands as well.