103 results on '"Hughart, David"'
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2. Thermal Infrared Detectors: expanding performance limits using ultrafast electron microscopy
3. Piecewise empirical model (PEM) of resistive memory for pulsed analog and neuromorphic applications
4. Total Ionizing Dose Response of 128 Analog States in Computational Charge-Trap Memory
5. Heavy-Ion-Induced Displacement Damage Effects on WOx ECRAM
6. Radiation Response of Domain-Wall Magnetic Tunnel Junction Logic Devices
7. Near-zero-field magnetoresistance measurements: A simple method to track atomic-scale defects involved in metal-oxide-semiconductor device reliability
8. Probing the Atomic-Scale Mechanisms of Time-Dependent Dielectric Breakdown in Si/SiO2 MOSFETs (June 2022)
9. Single Event Upset and Total Ionizing Dose Response of 12LP FinFET Digital Circuits
10. Single Event Upset and Total Ionizing Dose Response of 12LP FinFET Digital Circuits.
11. Layout Dependence of Total Ionizing Dose Effects on 12-nm Bulk FinFET Digital Structures .
12. Characterization of Memory Devices for Energy Efficient Analog In-Memory Neural Computing at the Edge.
13. A Comparison of Radiation-Induced and High-Field Electrically Stress-Induced Interface Defects in Si/SiO₂ MOSFETs via Electrically Detected Magnetic Resonance
14. Atomic-scale defects generated in the early/intermediate stages of dielectric breakdown in Si/SiO2 transistors
15. Total ionizing dose and single event effects on 12-nm bulk FinFETs.
16. Early Stage Mechanisms in Time-Dependent Dielectric Breakdown in the Si/SiO2 System.
17. Understanding the Initial Stages of Time Dependent Dielectric Breakdown in Si/SiO2 MOSFETs Utilizing EDMR and NZFMR
18. Initial Stages of Time-Dependent Dielectric Breakdown: Atomic Scale Defects Generated by High-Field Gate Stressing in Si/SiO2 Transistors.
19. Understanding the Initial Stages of Time Dependent Dielectric Breakdown in Si/SiO2 MOSFETs Utilizing EDMR and NZFMR.
20. Informational Asymmetry, Bidding Strategies, and the Marketing of Offshore Petroleum Leases
21. Probing the Atomic-Scale Mechanisms of Time-Dependent Dielectric Breakdown in Si/SiO 2 MOSFETs (June 2022).
22. Single event effects induced by heavy ions in SONOS charge trapping memory arrays.
23. Effects of Total Ionizing Dose on PEDOT/PSS Organic Memory Devices (Poster).
24. Comparing Atomic Scale Defects in Radiation and High Field Stress in Si/SiO2 MOSFETs.
25. Defect interactions of H(sub 2) in SiO(sub 2): implications for ELDRS and latent interface trap buildup
26. The effects of aging and hydrogen on the radiation response of gated lateral PNP bipolar transistors
27. Ionizing Radiation Effects in SONOS-Based Neuromorphic Inference Accelerators
28. Heavy-Ion-Induced Displacement Damage Effects in Magnetic Tunnel Junctions With Perpendicular Anisotropy
29. Irradiation Effects on Perpendicular Anisotropy Spin–Orbit Torque Magnetic Tunnel Junctions
30. Single event effects induced by heavy ions in SONOS charge trapping memory arrays
31. Single-Event Effects Induced by Heavy Ions in SONOS Charge Trapping Memory Arrays.
32. Electrically Detected Magnetic Resonance Study of High-Field Stress Induced Si/SiO2 Interface Defects
33. Heavy-ion-induced displacement damage effects in magnetic tunnel junctions with perpendicular anisotropy.
34. Ionizing radiation effects in SONOS-based neuromorphic inference accelerators.
35. Electrically Detected Magnetic Resonance Study of High-Field Stress Induced Si/SiO2 Interface Defects [Slides]
36. DFF Architecture Impact on SEU Response in Different Semiconductor Technologies.
37. Comparison of Radiation Effects in Custom and Commercially Fabricated Resistive Memory Devices
38. Atomic-scale defects generated in the early/intermediate stages of dielectric breakdown in Si/SiO2 transistors.
39. Development characterization and modeling of a TaOx ReRAM for a neuromorphic accelerator
40. Designing and Modeling Analog Neural Network Training Accelerators
41. Impact of Linearity and Write Noise of Analog Resistive Memory Devices in a Neural Algorithm Accelerator
42. Designing an analog crossbar based neuromorphic accelerator
43. Temperature Effects on the Total Ionizing Dose Response of TaOx-based Memristive Bit Cells
44. In Operando Characterization of Pt-TaOx-Ta Bipolar Vacancy Change Memories
45. Achieving ideal accuracies in analog neuromorphic computing using periodic carry
46. Evaluating Resistive Memory Devices for Neuromorphic Computing Using Ultrashort Voltage Pulses
47. Resistive memory device requirements for a neural algorithm accelerator
48. Power signatures of electric field and thermal switching regimes in memristive SET transitions
49. Mapping of Radiation-Induced Resistance Changes and Multiple Conduction Channels in${\rm TaO}_{\rm x}$ Memristors
50. The Susceptibility of${\hbox {TaO}}_{\rm x}$-Based Memristors to High Dose Rate Ionizing Radiation and Total Ionizing Dose
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