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This paper presents the application of compact insulated gate bipolar transistor and p-i-n diode models, including features such as local lifetime control and field-stop technology, to the full electrothermal system simulation of a hybrid electric vehicle converter using a lookup table of device losses. The vehicle converter is simulated with an urban driving cycle (the Federal Urban Driving Schedule), which is used to generate transient device temperature profiles. A methodology is also described to explore the converter reliability using the temperature profile, with rainflow cycle counting techniques from material fatigue analysis. The effects of ambient temperature, driving style, and converter design on converter reliability are also investigated. Index Terms--Compact modeling, electrothermal simulation, mission profile, power semiconductor devices, rainflow cycle counting, reliability, thermal cycling.

Although insulated-gate bipolar-transistor (IGBT) turn-on losses can be comparable to turn-off losses, IGBT turn-on has not been as thoroughly studied in the literature. In the present work IGBT turn on under resistive and inductive load conditions is studied in detail through experiments, finite element simulations, and circuit simulations using physics-based semiconductor models. Under resistive load conditions, it is critical to accurately model the conductivity-modulation phenomenon. Under clamped inductive load conditions at turn-on there is strong interaction between the IGBT and the freewheeling diode undergoing reverse recovery. Physics-based IGBT and diode models are used that have been proved accurate in the simulation of IGBT turn-off. Index Terms--Compact semiconductor device models, insulated-gate bipolar-transistor (IGBT) turn-on, interaction, physics-based semiconductor modeling.

This paper presents the development and implementation of a physics-based diode model which can simulate aspects of high-voltage diodes such as snappy recovery during punch-through and the modified carrier density profile due to local lifetime control. It uses a Fourier series solution for the ambipolar diffusion equation in the lightly doped base region. The model is compared with finite-element device simulations. A parameter extraction procedure for the diode with lifetime control is proposed in Part II. Index Terms--Lifetime control, physics-based model, p-i-n diode model, power semiconductor modeling, variable lifetime.

In this paper, a parameter extraction procedure for high-voltage diodes with local lifetime control is proposed. It is designed for use with the physics-based diode model described in Part I, which is capable of simulating diodes with local lifetime control. The parameter extraction procedure described requires a forward characteristic and a reverse recovery measurement. The parameter extraction procedure is illustrated using finite-element simulations. The physics-based model using the parameters extracted is then compared with experimental results. Index Terms--Lifetime control, physics-based model, p-i-n diode model, power semiconductor modeling, variable lifetime.

Recently, a simulation method for power electronic devices has emerged, which has high accuracy and short run times based on a Fourier model of the device physics. This paper describes the use of the Fourier models for diodes and insulated gate bipolar transistors (IGBTs) and implementation in MATLAB and Simulink in a formal optimization strategy. In particular, this paper investigates coupled circuit, diode, and IGBT behavior. Conclusions are drawn concerning device loading and circuit design, particularly the role of stray inductance. Index Terms--Circuit modeling, diode, insulated gate bipolar transistor (IGBT), MATLAB, optimization, physics-based semiconductor device models, power semiconductor modeling, simulation, Simulink.

A practical and accurate parameter extraction method is presented for the Fourier-based-solution physics-based insulated gate bipolar transistor (IGBT) and power diode models. The goal is to obtain a model accurate enough to allow switching loss prediction under a variety of operating conditions. In the first step of the extraction procedure, only one simple clamped inductive load test is needed for the extraction of the six parameters required for the diode model and of the 12 and 15 parameters required for the nonpunch-through (NPT) and punch-through (PT) IGBT models, respectively. The second part of the extraction procedure is an automated formal optimization step that refines the parameter estimation. Validation with experimental results from various structures of IGBT demonstrates the accuracy of the proposed IGBT and diode models and the robustness of the parameter extraction method. Index Terms--Insulated gate bipolar transistor (IGBT) model, optimized parameter extraction, parameter extraction, power diode model, semiconductor modeling.

The switching characteristics (turn-on and turn-off) and forward conduction drop of trench-gate punch-through insulated gate bipolar transistors (IGBTs) are examined over a temperature range of from -50[degrees]C to 125[degrees]C. An analytical description of the forward conduction voltage drop is presented based on temperature dependencies of the appropriate physical parameters and mechanisms. A physics-based PSpice model, incorporating much of the device behavior, is also described. Results from the model are compared to experimental waveforms. Index Terms--Electrothermal semiconductor models, insulated gate bipolar transistor (IGBT), physics-based power semiconductor models, power semiconductor modeling, punch-through (PT) IGBT.

The problems faced in generating analytical models for the insulated gate bipolar transistor (IGBT) and power diode are devising correct equations and determining realistic boundary conditions, especially for two-dimensional (2-D) features, while ensuring convergence of the models. These issues are addressed in this paper in relation to the temperature dependent modeling of NPT IGBTs and diodes. Simulation and experimental results are presented and compared to validate the modeling approach. Index Terms--IGBT, physics-based semiconductor device models, power diode, quasi-2-D semiconductor device models.

The high-voltage field-stop (FS) insulated gate bipolar transistor (IGBT) is a promising power device for high-power applications thanks to the robust characteristics offered by the FS technology, which combines the inherent advantages offered by punch-through and nonpunch-through structures while overcoming the drawbacks of each structure. in this paper, an electrothermal physics-based model for the FS IGBT is developed. The model contains a detailed description of the FS layer and it is validated using experimental results for a commercial 1200-V/60-A FS IGBT over the entire temperature range specified in the data sheets. The validated model is then used to simulate a 6.5-kV FS IGBT. The simulation results are compared with experimental results published in the literature and good agreement is obtained. Index Terms--Field-stop insulated gate bipolar transistor (FS IGBT), high voltage IGBT, physics-based power semiconductor models, power semiconductors modeling.

An advantage for some wide bandgap materials, that is often overlooked, is that the thermal coefficient of expansion (CTE) is better matched to the ceramics in use for packaging technology. It is shown that the optimal choice for uni-polar devices is clearly GaN. It is further shown that the future optimal choice for bipolar devices is C (diamond) owing to the large bandgap, high thermal conductivity, and large electron and hole mobilities. A new expression relating the critical electric field for breakdown in abrupt junctions to the material bandgap energy is derived and is further used to derive new expressions for specific on-resistance in power semiconductor devices. These new expressions are compared to the previous literature and the efficacy of specific power devices, such as heterojunction MOSFETs, using GaN are discussed. Index Terms--Breakdown voltage, critical electric field, diamond, GaN, power electronics, SiC, specific on-resistance, wide bandgap.

A highly descriptive method for displaying heat flow in power modules is presented. Heat flow is studied for three different transistor-stack types: direct bond copper (DBC), thick-film printed substrate, and insulated metal substrate (IMS). DBC and thick film are thermally superior to IMS, but IMS shows potential. In addition, the effect of case-to-sink interface conductivity on heat flow is studied and shown to be of extreme importance in a proper thermal simulation.

Conventional air-magnetic circuit breakers, which are widely used in low-voltage applications, utilize magnetic forces that are produced by blowout coils, the geometry of the arcing contacts, or both. The magnetic forces act to push the arc off the contacts into an arc chute, which consists of a number of metal plates. The arc chute causes the arc to be split into a number of smaller arcs, thereby facilitating the process of extinguishing the arc. In the last 20 years, the technology of circuit breakers has dramatically advanced, now including mature devices based on gas-blast (such as [SF.sub.6]) and vacuum interruption. At the same time, the technology of power electronic devices has evolved rapidly, leading to suggestions of a purely static circuit breaker based on solid-state electronic devices. Recently, several different proposals have appeared for current-limiting devices to be used in conjunction with or in replacement of conventional circuit breakers. The technologies involved in these proposals have ranged from very familiar (series reactors) to quite innovative (conductive polymer devices). Several of these proposed technologies have been used to a limited extent in commercial products, but they are very likely to see increasing applications as the technology matures. This paper begins with a short review of conventional circuit breaker action for background, then reviews the recent literature for current-limiting technologies that could be applied to low-voltage electric power systems. The paper concludes with a description of work underway for further development of conductive polymer current limiters.

Experiments were conducted to study the high energy, high di/dt pulse-switching characteristics of SCR's with and without the amplifying gate. High di/dt, high-energy single-shot experiments were first done. Devices without the amplifying gate performed much better than the devices with the amplifying gate. A physical model is presented to describe the role of the amplifying gate in the turn-on process, thereby explaining the differences in the switching characteristics. The turn-on area for the failure of the devices was theoretically estimated and correlated with observations. This allowed calculation of the current density required for failure. Since the failure of these devices under high di/dt conditions was thermal in nature, a simulation using a finite-element method was performed to estimate the temperature rise in the devices. The results from this simulation showed that the temperature rise was significantly higher in the devices with the amplifying gate than in the devices without the amplifying gate. From these results, the safe operating frequencies for all the devices under high di/dt conditions was estimated. These estimates were confirmed by experimentally stressing the devices under high di/dt repetitive operation.

A study of thyristor performance at low temperatures is presented. A 1200-V, 560-A inverter thyristor is evaluated for its forward breakover voltage and forward conduction voltage drop. Actual and computed values in terms of the temperature reduction from 25 to -180 degrees Celsius are compared. Results show a negative temperature coefficient for the forward breakover voltage and a larger value of forward voltage drop at 90 K than at room temperature.