Back to Search Start Over

Modeling of MOS-side carrier injection in trench-gate IGBTs

Authors :
Liqing Lu
Zhiyang Chen
Angus Bryant
Hudgins, Jerry L.
Palmer, Patrick R.
Santi, Enrico
Source :
IEEE Transactions on Industry Applications. March-April, 2010, Vol. 46 Issue 2, p875, 9 p.
Publication Year :
2010

Subjects

Subjects :
Bipolar transistors -- Models
Bipolar transistors -- Design and construction
Metal oxide semiconductors -- Electric properties
Business
Computers
Electronics
Electronics and electrical industries

Details

Language :
English
ISSN :
00939994
Volume :
46
Issue :
2
Database :
Gale General OneFile
Journal :
IEEE Transactions on Industry Applications
Publication Type :
Academic Journal
Accession number :
edsgcl.223784438

Tools

Authors Abstract Subjects Details