152 results on '"Hoyt, J. L."'
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2. Fabrication of ultra-thin strained silicon on insulator
3. Epitaxial Growth and Electronic Characterization of Carboncontaining Silicon-Based Heterostructures
4. Characteristics of Surface-Channel Strained Si1-yCyn-MOSFETS
5. Control of implant-damage-enhanced boron diffusion in epitaxially grown n-Si/p-Si1-xGex/n-Si heterojunction bipolar transistors
6. Electrical characteristics of diodes fabricated in selective Si/Si1−x Ge x epitaxial layers
7. Diffusion Behavior of Ion-Implanted n-type Dopants in Silicon Germanium
8. Characterization of dark current in Ge-on-Si photodiodes.
9. The determination of alcohol and ether sulfates and their respective alkyl carbon distributions in detergent formulations by gas chromatography
10. Plasma Post-Oxidation for High Mobility Strained-Ge pFETs with Aggressively Scaled High- Dielectrics
11. Ultra-Thin, High Quality HfO2 on Strained-Ge MOS Capacitors with Low Leakage Current
12. High mobility strained-Ge pMOSFETs with 0.7-nm ultrathin EOT using plasma post oxidation HfO2/Al2O3/GeOx gate stacks and strain modulation
13. An additional antecedent of empathic concern : Valuing the welfare of the person in need
14. Ultrathin Strained-Ge Channel P-MOSFETs With High-$K$ /Metal Gate and Sub-1-nm Equivalent Oxide Thickness
15. An Evaluation of Hypocarbia and Hypercarbia During Carotid Endarterectomy
16. Enhanced Hole Mobility in High Ge Content Asymmetrically Strained-SiGe p-MOSFETs
17. Photonic integration in a commercial scaled bulk-CMOS process
18. High speed analog-to-digital conversion with silicon photonics
19. A study of the Rima Sirsalis lunar magnetic anomaly
20. Photonic analog-to-digital conversion with electronic-photonic integrated circuits
21. Characterization and Performance Analysis of LPCVD Germanium-on-Silicon C-Band Photodiodes
22. Spatial Characterization of Germanium-on-Silicon C-Band PIN Photodiodes
23. Electron Transport in Strained-Silicon Directly on Insulator Ultrathin-Body n-MOSFETs With Body Thickness Ranging From 2 to 25 nm
24. Silicon photonics for compact, energy-efficient interconnects [Invited]
25. Continuous MOSFET performance increase with device scaling: The role of strain and channel material innovations
26. Electronic photonic integrated circuits for high speed, high resolution, analog to digital conversion
27. Nanoscale stress analysis of strained-Si metal-oxide-semiconductor field-effect transistors by quantitative electron diffraction contrast imaging
28. Germanium-concentration dependence of arsenic diffusion in silicon germanium alloys
29. Effect of rapid thermal annealing on strain in ultrathin strained silicon on insulator layers
30. Abrupt Phosphorus Profiles in Si
31. High speed analog-to-digital conversion with silicon photonics.
32. Integrated optical components in silicon for high speed analog-to-digital conversion.
33. Electronic photonic integrated circuits for high speed, high resolution, analog to digital conversion.
34. Comparison of arsenic and phosphorus diffusion behavior in silicon–germanium alloys
35. Limited Reaction Processing: Heterostructure and Novel Device Fabrication.
36. Measurement of the conduction band offsets in Si/Si1−x−yGexCy and Si/Si1−yCy heterostructures using metal-oxide-semiconductor capacitors
37. Admittance spectroscopy analysis of the conduction band offsets in Si/Si1−x−yGexCy and Si/Si1−yCy heterostructures
38. Limited Reaction Processing for Semiconductor Materials Preparation
39. Metal–oxide–semiconductor capacitance–voltage characteristics and band offsets for Si1−yCy/Si heterostructures
40. Strain Engineering of Silicon-Based Heterostructures: Materials and Devices
41. Substitutional carbon incorporation in epitaxial Si1−yCy layers grown by chemical vapor deposition
42. Fabrication of silicon nanopillars containing polycrystalline silicon/insulator multilayer structures
43. Effects of Si thermal oxidation on B diffusion in Si and strained Si1−xGex layers
44. Erratum: ‘‘Effects of strain on boron diffusion in Si and Si1−xGex’’ [Appl. Phys. Lett. 66, 580 (1995)]
45. Effects of strain on boron diffusion in Si and Si1−xGex
46. Boron Diffusion in Si and Si1−xGex
47. Rapid Thermal Processing-Based Heteroepitaxy: Material and Device Challenges
48. Capacitance-Voltage Characteristics of p-Si/SiGeC Mos Capacitors
49. Growth of alternating 〈100〉/〈111〉‐oriented II‐VI regions for quasi‐phase‐matched nonlinear optical devices on GaAs substrates
50. Comparison of boron diffusion in Si and strained Si1−xGex epitaxial layers
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