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Enhanced hole transport in short-channel strained-SiGe p-MOSFETs
- Source :
- IEEE Transactions on Electron Devices. Nov, 2009, Vol. 56 Issue 11, p2644, 8 p.
- Publication Year :
- 2009
- Subjects :
- Germanium -- Electric properties
Holes (Electron deficiencies) -- Analysis
Metal oxide semiconductor field effect transistors -- Electric properties
Metal oxide semiconductor field effect transistors -- Structure
Silicon alloys -- Electric properties
Silicon alloys -- Structure
Business
Electronics
Electronics and electrical industries
Subjects
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 56
- Issue :
- 11
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.211521349