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As devices become more miniaturized and integrated, the heat flux density has increased, highlighting the issue of heat concentration, especially for low thermal conductivity gallium oxide (Ga2O3). This study utilizes diamond composite substrates with an AlN transition layer to assist Ga2O3 in rapid thermal dissipation. All samples were prepared using pulsed laser deposition (PLD) and annealed at 600–1000 °C. The microstructure, surface morphology, vacancy defects, and thermal characteristics of post-annealed Ga2O3 were then thoroughly investigated to determine the mechanism by which annealing temperature influences the heat transfer of heterostructures. The results demonstrate that increasing the annealing temperature can improve the crystallinity of Ga2O3 while also reducing oxygen vacancy defects from 20.6% to 9.9%. As the temperature rises to 1000 °C, the thermal conductivity of Ga2O3 reaches a maximum of 12.25 W/(m·K). However, the interface microstructure has no direct correlation with annealing temperature. At 700 °C, Ga2O3/diamond exhibits a maximum thermal boundary conductance of 127.06 MW/(m2·K). Higher temperatures (>800 °C) cause irregular mixtures to form near the heterointerface, intensifying phonon interface scattering and sharply deteriorating interfacial heat transfer. These findings contribute to a better understanding of the heterointerface thermal transfer influence mechanism and provide theoretical guidance for the thermal management design and physical analysis of Ga2O3-based power devices.

Reynoutria japonica Houtt. is an important medical plant with a long history of thousands of years in China, however, its mitochondrial genome (mitogenome) has not been reported yet. In this work, we reported and analyzed the R. japonica mitogenome. The main results include: The R. japonica mitogenome was 302,229 bp in length and encoded 48 genes, including 27 protein-coding genes (PCGs), 3 rRNA genes, and 18 tRNA genes. Repeat sequence analysis revealed that there were 54 repeat sequences ranging from 193 bp to 1,983 bp in the R. japonica mitogenome. Relative synonymous codon usage (RSCU) analysis showed that leucine (900, 11.01%) and serine (732, 8.96%) were the two most abundant amino acids, and the codons with RSCU values showed the preference of A or T ending when greater than 1. The RNA editing sites of PCGs in the R. japonica mitogenome were characterized, and 299 RNA editing sites were found. Extensive sequences transfer between mitochondrion and chloroplast were found in R. japonica, where 11 complete plastid-derived tRNA genes stayed intact in the R. japonica mitogenome. Three genes (ccmFC, cox1, and nad1) were seen to play essential roles in the evolution through selection pressure analysis. The phylogenetic analysis showed that Fallopia multiflora was the closest species with R. japonica, in consistency with the results of chloroplast genome. Overall, the current work presents the first mitogenome of R. japonica and could contribute to the phylogenetic analysis of the family Polygonaceae.

We present how the interaction between Al dopants and threading dislocations affects dislocation inclinations and then plays an important role in controlling residual strain in GaN-on-Si epitaxial films. When the Al concentration in the GaN epitaxial film is increased to 0.85%, the dislocations extend almost in the growth direction, contributing to a strain-free epitaxial film. We suggest that the Al atoms could substitute for Ga vacancies at the dislocation cores on the growth surface and then inhibit the dislocation inclinations. The suppressed dislocation inclinations lead to a reduced relaxation of compressive strain. The results pave a new way to control dislocation movements and strain in GaN epitaxial films on Si substrates.

Abstract Background Accumulating data have established that microRNAs (miRNAs) play significant regulatory roles in the carcinogenesis and progression of ovarian cancer (OC). MiR-425-5p was reported to function in various tumors. However, the roles and underlying mechanism of miR-425-5p involvement in OC development and progression are unclear. Methods A comprehensive strategy of data mining, computational biology, and real-time polymerase chain reaction was employed to identify the involvement of miR-425-5p in OC progression. The effect of miR-425-5p on the proliferation, migration, and invasion of OC cells was determined using Cell Counting Kit-8, wound-healing, and Matrigel invasion assays, respectively. Luciferase assay was performed to evaluate the interactions between miR-425-5p and MAGI2-AS3 or AFF4. Results miR-425-5p was significantly up-regulated in OC tissues and cells. The luciferase reporter assay revealed that miR-425-5p was negatively regulated by MAGI2-AS3. Silencing miR-425-5p inhibited the proliferation, migration, and invasion of OC cells in vitro. Bioinformatics analysis and luciferase reporter assay revealed that AFF4 was the target gene of miR-425-5p. Moreover, AFF4 expression was significantly decreased in OC and was closely related to the good prognosis of patients with OC. AFF4 overexpression inhibited the proliferation, migration, and invasion of OC cells in vitro. By contrast, silencing AFF4 promoted the proliferation, migration, and invasion of OC cells in vitro. Finally, AFF4 suppression rescued the inhibitory effect of silencing miR-425-5p on the proliferation, migration, and invasion of OC cells. Conclusion To the best our knowledge, this is the first study to demonstrate that miR-425-5p overexpression in OC is negatively regulated by MAGI2-AS3. Moreover, miR-425-5p promotes the proliferation, migration, and invasion of OC cells by targeting AFF4, suggesting that miR-425-5p/AFF4 signaling pathway represented a novel therapeutic target for patients with OC.

Dianthus spiculifolius is a perennial herbaceous flower with strong environmental adaptability and is an important ornamental ground cover plant. In this study, seeds of D. spiculifolius were used as explants for callus induction, adventitious bud differentiation, and rooting by adding different concentrations of 2,4-dichlorophenoxyacetic acid (2,4-D), 6-benzyl aminopurine (6-BA), and naphthaleneacetic acid (NAA) to Murashige and Skoog medium. The calli generated were co-cultured with Agrobacterium tumefaciens EHA105 containing pBI121-GUS or pBI121-GFP plasmids for 30 min, and transgenic regenerated plants were obtained by kanamycin (30 mg · L−1) screening. RT-PCR confirmed the stable expression of the exogenous GUS and GFP genes in the D. spiculifolius. The β-glucuronidase (GUS) histochemical staining confirmed GUS gene expression in transgenic calli, adventitious buds, and regenerated plants of D. spiculifolius. The green fluorescent protein (GFP) visual analysis showed GFP gene expression in transgenic calli. Furthermore, subcellular localization analysis showed that the three organelle marker proteins were not only successfully expressed but also accurately localized to their corresponding organelles in D. spiculifolius callus cells. These results indicated a successful establishment of a reliable and efficient A. tumefaciens-mediated genetic transformation system, which will contribute to functional gene research and genetic improvement of D. spiculifolius.

The quality of the N-doped 4H-SiC homoepitaxial layers grown via hot-wall horizontal chemical vapor deposition (CVD) was evaluated at various C/Si ratios (1.0–1.2) and growth temperatures (1570–1630 °C). The microstructure and morphology of the epilayers were studied through a comparative analysis of the AFM patterns under different growth conditions. X-ray photoelectron spectroscopy and Raman spectroscopy revealed the quality of the 4H-SiC epilayers and the amount of N-doping. It was found that an increase in the C/Si ratio enabled obtaining a quite smooth epitaxial layer surface. Moreover, only the 4H-SiC crystal type was distinguished in the epilayers. In addition, the epitaxial quality was gradually improved, and the amount of defect-related C-C bonds significantly dropped from 38.7% to 17.4% as the N doping content decreased from 35.3% to 28.0%. An increase in the growth temperature made the epitaxial layer surface smoother (the corresponding RMS value was ~0.186 nm). According to the Raman spectroscopy data, the 4H-SiC forbidden mode E1(TO) in the epilayers was curbed at a higher C/Si ratio and growth temperature, obtaining a significant enhancement in epitaxial quality. At the same time, more N dopants were inserted into the epilayers with increasing temperature, which was opposite to increasing the C/Si ratio. This work definitively shows that the increase in the C/Si ratio and growth temperature can directly enhance the quality of the 4H-SiC epilayers and pave the way for their large-scale fabrication in high-power semiconductor devices.

Inorganic scintillators are of great significance in the fields of medical CT, high-energy physics and industrial nondestructive testing. In this work, we confirm that the Pb4Lu3F17: Re (Re = Tb, Eu, Sm, Dy, Ho) crystals are promising candidates for a new kind of scintillator. Detailed crystal structure information is obtained by the Rietveld refinement analysis. Upon X-ray irradiation, all these scintillators exhibited characteristic 4f-4f transitions. The Ce and Gd ions were verified to be useful for enhancing the scintillation intensity via introducing energy transfer processes. The integrated scintillation intensity of the Pb4Lu3F17: Tb/Ce is about 16.8% of the commercial CsI (Tl) single crystal. Our results manifested that Pb4Lu3F17: Re has potential application in X-ray detection and imaging.

The homoepitaxial growth of 4H-SiC films was conducted on 4H-SiC 150 mm 4° off-axis substrates by using a home-made hot-wall chemical vapor deposition (CVD) reactor. Special attention was paid to the influence of the growth temperature on the surface morphology, growth rate, doping efficiency, and structural uniformity of the films. Among the above factors, growth temperature and flow ratio were shown to be the essential parameters to produce high-quality homoepitaxial layers. Furthermore, a two-side flow tunnel was introduced to control the growth temperature nonuniformity in the reactor. The influence of flow ratio on the epitaxial layer uniformity was also studied. It was found that the surface roughness increased with the increasing temperature, achieving its minimum value of 0.183 nm at 1610 °C. Besides that, the film growth rate decreased with the increase in growth temperature, whereas the degrees of thickness non-uniformity, N2 doping non-uniformity, and doping efficiency increased. Meanwhile, both the thickness and doping uniformity can be improved by adjusting H2 and N2 flow ratios, respectively. In particular, the use of the H2 ratio of 1.63 and N2 ratio of 0.92 enabled one to increase the degree of uniformity of thickness and doping by 0.79% (standard deviation/mean value) and 3.56% (standard deviation/mean value), respectively, at the growth temperature of 1630 °C.

The hot stamping technology of aluminum alloy is of great significance for realizing the light weight of the automobile body, and the proper process parameters are important conditions to obtain excellent aluminum alloy parts. In this paper, the thermal deformation behavior of 6016 aluminum alloy at a high temperature is experimentally studied to provide a theoretical basis for a finite element model. With the help of blank stamping finite element software, a numerical model of a 6016 aluminum alloy automobile windshield beam during hot stamping was established. The finite element model was verified by a forming experiment. Then, the effect of the process parameters, including blank holder force, die gap, forming temperature, friction coefficient, and stamping speed on aluminum alloy formability were investigated using Taguchi design, grey relational analysis (GRA), and analysis of variance (ANOVA). Stamping tests were arranged at temperatures between 480 and 570 °C, blank holder force between 20 and 50 kN, stamping speed between 50 and 200 mm/s, die gap between 1.05 t and 1.20 t (t is the thickness of the sheet), and friction coefficient between 0.15 and 0.60. It was found that the significant factors affecting the forming quality of the hot-stamped parts were blank holder force and stamping speed, with influence significance of 28.64% and 34.09%, respectively. The optimal parameters for hot stamping of the automobile windshield beam by the above analysis are that the die gap is 1.05 t, the blank temperature is 540 °C, the coefficient of friction is 0.15, stamping speed is 200 mm/s, and blank holder force is 50 kN. The optimized maximum thickening rate is 4.87% and the maximum thinning rate is 9.00%. The optimization method used in this paper and the results of the process parameter optimization provide reference values for the optimization of hot stamping forming.

A two-dimensional electron gas (2DEG) was formed at the interface of an ultrathin ZnO/Ga2O3 heterostructure deposited by atomic layer deposition (ALD) at 200 °C on a SiO2/Si substrate. It is found that the sheet resistance decreases steeply to ∼104 Ω/□ as the thickness of the ZnO layer increases to a certain extent, and an optimal thickness of the top layer is determined. An ∼50-nm-thick β-phase Ga2O3 layer was formed after annealing at 800 °C, and a 12-nm-thick amorphous ZnO layer was observed by x-ray diffraction and transmission electron microscopy. The oxygen defects were analyzed by x-ray photoelectron spectroscopy. The defect energy levels of oxygen vacancies in Ga2O3 and ZnO thin films were calculated by first-principles simulation, and oxygen vacancies were generated at the interface of the ZnO/Ga2O3 thin film heterostructure to form 2DEG, which is demonstrated experimentally and theoretically. An assumption is proposed that the oxygen vacancy plays a role of the donor of free electrons at the ZnO/Ga2O3 interface because of the small energy level between the oxygen vacancy defect level and conduction band minimum (CBM) of the ZnO layer, which could easily trigger the charge transfer in the interface region. The 2DEG can be realized on the partially ordered microstructure of the Ga2O3 layer. With the assistance of the ALD technique, the thickness of the ZnO/Ga2O3 heterostructure can be as thin as ∼65 nm, which is favorable for devices of stack or ultrathin structures. Moreover, the low temperature deposition by ALD can be adopted for flexible or stretchable devices.

Abstract Vertically aligned carbon nanotubes (VACNTs) were synthesized on different oxide buffer layers using chemical vapor deposition (CVD). The growth of the VACNTs was mainly determined by three factors: the Ostwald ripening of catalyst nanoparticles, subsurface diffusion of Fe, and their activation energy for nucleation and initial growth. The surface roughness of buffer layers largely influenced the diameter and density of catalyst nanoparticles after annealing, which apparently affected the lifetime of the nanoparticles and the thickness of the prepared VACNTs. In addition, the growth of the VACNTs was also affected by the deposition temperature, and the lifetime of the catalyst nanoparticles apparently decreased when the deposition temperature was greater than 600 °C due to their serious Ostwald ripening. Furthermore, in addition to the number of catalyst nanoparticles, the density of the VACNTs was also largely dependent on their activation energy for nucleation and initial growth.

Being an invasive plant, Polygonum cuspidatum is highly resilient and can survive in unfavorable environments for long periods; however, its molecular mechanisms associated with such environmental resistance are largely unknown. In this study, a WRKY transcription factor (TF) gene, PcWRKY11, was identified from P. cuspidatum by analyzing methyl jasmonate (MeJA)-treated transcriptome data. It showed a high degree of homology with WRKY11 from Arabidopsis thaliana, containing a WRKY domain and a zinc finger structure and II-d WRKY characteristic domains of HARF, a calmodulin-binding domain (C-motif), and a putative nuclear localization signal (NLS) through sequence alignment and functional element mining. qPCR analysis showed that the expression of PcWRKY11 can be induced by NaCl, osmotic stress, and UV-C. In this study, we also found that overexpression of PcWRKY11 in A. thaliana could significantly increase salt tolerance. To explore its possible molecular mechanism, further investigations showed that compared with the wild type (WT), under salt stress, the transgenic plants showed a lower malondialdehyde (MDA) content, higher expression of ascorbate peroxidase (APX) and superoxide dismutase (SOD), and higher enzyme activity of peroxidase (POD), superoxide dismutase (SOD), and catalase (CAT). Moreover, the transgenic plants also showed higher expression of Δ1-pyrroline-5-carboxylate synthase (AtP5CS), and higher contents of proline and soluble sugar. Taken together, these results indicate that PcWRKY11 may have a positive role in plants’ adaptation to salinity conditions by reducing reactive oxygen species (ROS) levels and increasing osmosis substance synthesis.

Willow (Salix), a dioecious plant, is an important ornamental tree species in the world. Salix linearistipularis, a perennial woody plant species naturally distributed on the Songnen Plain saline-alkali land in northeast China, has a high saline condition. To study the sexual differences of S. linearistipularis in salinity tolerance, the physiological and transcriptional responses to salinity were compared between female and male cuttings. Under salinity stress, the female leaves exhibited higher superoxide dismutase and peroxidase activities and photosynthetic capacity, and lower H2O2 contents than those of male leaves. Under salinity stress, sodium (Na+) accumulation in female leaves was lower than that in the male leaves. The non-invasive micro-test showed that the net Na+ efflux in the salt-treated female roots was higher than that in male roots. Physiological responses revealed that female cuttings were more tolerant than males, which may be mainly due to females having lower leaf Na+ accumulation and higher root Na+ efflux capacity than males. Transcriptional analyses showed that 108 differentially expressed salt-responsive genes were identified in both female and male roots; most of these showed sexual differences in expression patterns under salinity stress. RNA-seq combined with qPCR analysis showed that the salt-induced expression of four Na+/H+ antiporter (NHX) genes (SlNHX3, 5, 6, 7) in female roots was higher than that in male roots. Transcriptional analyses revealed that the higher Na+ efflux capacity in female roots than in male roots may be closely related to the differential expression of salt-responsive genes, especially NHX genes.

Nitrogen (N) is an essential macronutrient for plant growth. Plants absorb and utilize N mainly in the form of nitrate (NO3−) or ammonium (NH4+). In this study, the nitrate transporter DsNRT3.1 (also known as the nitrate assimilation-related protein DsNAR2.1) was characterized from Dianthus spiculifolius. A quantitative PCR (qPCR) analysis showed that the DsNRT3.1 expression was induced by NO3−. Under N-starvation conditions, the transformed Arabidopsis seedlings expressing DsNRT3.1 had longer roots and a greater fresh weight than the wild type. Subcellular localization showed that DsNRT3.1 was mainly localized to the plasma membrane in Arabidopsis root hair cells. Non-invasive micro-test (NMT) monitoring showed that the root hairs of N-starved transformed Arabidopsis seedlings had a stronger NO3− and NH4+ influx than the wild-type seedlings, using with NO3− or NH4+ as the sole N source; contrastingly, transformed seedlings only had a stronger NO3− influx when NO3− and NH4+ were present simultaneously. In addition, the qPCR analysis showed that the expression of AtNRT2 genes (AtNRT2.1–2.6), and particularly of AtNRT2.5, in the transformed Arabidopsis differed from that in the wild type. Overall, our results suggest that the heterologous expression of DsNRT3.1 affects seedlings’ growth by enhancing the NO3− and NH4+ uptake in N-starved Arabidopsis. This may be related to the differential expression of AtNRT2 genes.

Plant SWEETs (Sugars Will Eventually be Exported Transporters) affect the growth of plants by regulating the transport of sugar from source to sink and its intracellular transport between different organelles. In this study, DsSWEET17 from Dianthus spiculifolius was identified and characterized. Real-time quantitative PCR analysis revealed that the expression of DsSWEET17 was affected by exogenous application of fructose and glucose as well as under salt, osmotic, and oxidation stress. Colocalization experiments showed that the DsSWEET17-GFP (green fluorescent protein) fusion protein was localized to the FM4-64-labeled tonoplasts in Arabidopsis. Compared to the wild type, the transgenic Arabidopsis seedlings overexpressing DsSWEET17 had longer roots, greater fresh weight, and a faster root growth upon exogenous application of fructose. Furthermore, transgenic Arabidopsis seedlings had significantly higher fructose accumulation than was observed for the wild-type seedlings. The analysis of root length revealed that transgenic Arabidopsis had higher tolerance to salt, osmotic, and oxidative stresses. Taken together, our results suggest that DsSWEET17 may be a tonoplast sugar transporter, and its overexpression affects sugar metabolism and confers multiple stress tolerance in Arabidopsis.

Plant SWEETs (sugars will eventually be exported transporters) play a role in plant growth and plant response to biotic and abiotic stresses. In the present study, DsSWEET12 from Dianthus spiculifolius was identified and characterized. Real-time quantitative PCR analysis revealed that DsSWEET12 expression was induced by sucrose starvation, mannitol, and hydrogen peroxide. Colocalization experiment showed that the DsSWEET12-GFP fusion protein was localized to the plasma membrane, which was labeled with FM4-64 dye, in Arabidopsis and suspension cells of D. spiculifolius. Compared to wild type plants, transgenic Arabidopsis seedlings overexpressing DsSWEET12 have longer roots and have a greater fresh weight, which depends on sucrose content. Furthermore, a relative root length analysis showed that transgenic Arabidopsis showed higher tolerance to osmotic and oxidative stresses. Finally, a sugar content analysis showed that the sucrose content in transgenic Arabidopsis was less than that in the wild type, while fructose and glucose contents were higher than those in the wild type. Taken together, our results suggest that DsSWEET12 plays an important role in seedling growth and plant response to osmotic and oxidative stress in Arabidopsis by influencing sugar metabolism.