Synthesis and phosphorescence mechanism of yellow-emissive long-afterglow phosphor BaAl2Si3O4N4: Yb2+

A series of novel Ba1-xAl2Si3O4N4: xYb2+ yellow-emissive long-afterglow phosphors was successfully synthesized via a high-temperature solid-state reaction with two sintering steps. The phosphors exhibited broad band emission (full width at half maximum, FWHM = 107 nm) with a peak at 518 nm. With an increase in the Yb2+ doping content in Ba1-xAl2Si3O4N4: xYb2+ phosphors, the luminescence intensity reached a maximum at x = 0.15. The long-afterglow phosphor can be activated effectively by 254 nm UV light, and the afterglow can persist for more than 7 h. From the thermoluminescence (TL) spectrum, there are three types of electron traps, with average evaluation depths of 0.485, 0.592, and 0.681 eV. The afterglow is caused by the capture and re-release of free electrons by the three trap energy levels. Finally, the thermal and chemical stability of the phosphor was tested, its luminescence intensity was 78.7% at 150 °C and 99.5% after 5 h soak in water compared to that at room temperature and original, respectively.