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Organic light-emitting diode (OLED) microdisplays have attracted much attention as displays for small form factor augmented reality (AR) devices. To realize glass-like thin and wide field of view (FoV) AR devices, we designed a display module with a high aspect ratio microdisplay and a thin optical component. For the high aspect ratio microdisplay, we developed the color OLED microdisplay with a 32:9 aspect ratio and a 0.8-inch diagonal ∼2,490-ppi CMOS backplane. To express color and reduce optical crosstalk, we fabricated the color filter (C/F) patterning directly on the white OLED. We also developed a pin mirror lens with 11 pin mirrors to improve the optical efficiency and quality with a thin lens. By combining the microdisplay with LetinAR’s pin mirror lens, we successfully demonstrated an AR device with a wide horizontal FoV of 46° but with a small form factor 4 mm lens.

Microdisplay is a key technology for realizing augmented reality (AR) and mixed reality (MR) devices, which have attracted much attention of late. Even though the operating voltage in the tandem structure is higher than that in the single structure, 2-stack tandem OLED exhibited 20,000 cd/m2 at 9 V, which is compatible with CMOS circuit driving. Due to its top-emitting geometry with a tandem structure, the OLED device with a well-controlled thickness exhibited a white spectrum with (0.26, 0.26) color coordinates. The pixel density of the fabricated microdisplay panel with a white tandem OLED was about 2350 pixels per inch, and the active area of the panel was 0.7 inch diagonally. The resolution of the panel was 1280 × 1024, corresponding to SXGA, and the maximal luminance was 3,000 cd/m2.

We investigated the optical reflectance, surface roughness, and sheet resistance of aluminum (Al)/titanium nitride (TiN), titanium (Ti), and tungsten (W) layers on Si substrates, which are available in the CMOS foundry, for organic light-emitting diode (OLED) microdisplays. The devices with different metal anode layers exhibited different hole-injection properties and OLED performances, owing to the different optical and electrical properties of metal anode layers. Based on the OLED characteristics, the Al/TiN layer was selected as an anode layer for OLED microdisplays. A green monochromatic OLED microdisplay panel was designed and implemented using the 0.11-μm CMOS process. The density of pixels was ~2 351 pixels per inch and the panel's active area was 0.7 in in diagonal. The resolution of the panel was 1 280 × 3 × 1 024, corresponding to SXGA. The panel was successfully operated, and the maximal luminance was ~460 cd/m2.

Recently, scaling down dynamic random access memory (DRAM) has become more of a challenge, with more faults than before and a significant degradation in yield. To improve the yield in DRAM, a redundancy repair technique with intra-subarray replacement has been extensively employed to replace faulty elements (i.e., rows or columns with defective cells) with spare elements in each subarray. Unfortunately, such technique cannot efficiently handle a biased distribution of faulty cells because each subarray has a fixed number of spare elements. In this article, we propose a novel redundancy repair technique that uses a hashing method to solve this problem. Our hashing technique reorganizes replacement regions by changing the way in which their replacement information is referred, thus making faulty cells become evenly distributed to the regions. We also propose a fast repair algorithm to find the best hash function among all possible candidates. Even if our approach requires little hardware overhead, it significantly improves the yield when compared with conventional redundancy techniques. In particular, the results of our experiment show that our technique saves spare elements by about 57% and 55% for a yield of 99% at BER 1e-6 and 5e-7, respectively.

Vertically stacked two-dimensional (2D) heterostructures composed of 2D semiconductors have attracted great attention. Most of these include hexagonal boron nitride (h-BN) as either a substrate, an encapsulant, or a tunnel barrier. However, reliable synthesis of large-area and epitaxial 2D heterostructures incorporating BN remains challenging. Here, we demonstrate the epitaxial growth of nominal monolayer (ML) MoSe

In the recent context of emerging two-dimensional (2D) materials, a comprehensive set of spatially resolved photoelectron spectroscopic techniques providing information ranging from surface chemical states to electronic band structure must be available at the practical level (i.e. from laboratory-based instrumentation) for a better understanding of their outstanding properties. We highlight recent capabilities of X-ray PhotoElectron Emission Microscopy (XPEEM) and reciprocal-space VUV-PEEM (kPEEM) for addressing this issue, with a report on microscopic analyses of chemical vapor deposited (CVD) molybdenum disulfide (MoS2) domains. These include band structure imaging with event-counting detection allowing to perform angle-resolved ultra-violet photoelectron spectroscopy (ARUPS) in a parallel way with energy resolution of 200 meV and less, and k resolution of 0.05 A−1. Copyright © 2016 John Wiley & Sons, Ltd.

Atomically thin GaSe has been predicted to have a non-parabolic, Mexican hat-like valence band structure due to the shift of the valence band maximum (VBM) near the Γ point which is expected to give rise to novel, unique properties such as tunable magnetism, high effective mass suppressing direct tunneling in scaled transistors, and an improved thermoelectric figure of merit. However, the synthesis of atomically thin GaSe remains challenging. Here, we report on the growth of atomically thin GaSe by molecular beam epitaxy (MBE) and demonstrate the high quality of the resulting van der Waals epitaxial films. The full valence band structure of nominal bilayer GaSe is revealed by photoemission electron momentum microscopy (k-PEEM), confirming the presence of a distorted valence band near the Γ point. Our results open the way to demonstrating interesting new physical phenomena based on MBE-grown GaSe films and atomically thin monochalcogenides in general. Molecular beam epitaxy enables growth of high-quality, atomically thin GaSe on a GaAs substrate. A team led by Andras Kis at EPFL successfully demonstrated the synthesis of large-grain GaSe van der Waals epitaxial films using a two-step growth approach. The quality and spatial uniformity of the as-grown films were probed by various means of characterization, including scanning transmission electron microscopy, in-situ reflection high energy electron diffraction, and photoemission electron momentum microscopy. The results indicate a uniform distribution of Ga and Se in the GaSe film; at the atomically thin limit, the electronic band structure was found to exhibit inverted band dispersion at the Γ point, leading to a Mexican Hat-like valence band dispersion. These finding may pave the way to potential applications of GaSe in large-area electronics and spintronics.

Vertically stacked two-dimensional (2D) heterostructures composed of 2D semiconductors have attracted great attention. Most of these include hexagonal boron nitride (h-BN) as either a substrate, an encapsulant, or a tunnel barrier. However, reliable synthesis of large-area and epitaxial 2D heterostructures incorporating BN remains challenging. Here, we demonstrate the epitaxial growth of nominal monolayer (ML) MoSe2 on h-BN/Rh(111) by molecular beam epitaxy, where the MoSe2/h-BN layer system can be transferred from the growth substrate onto SiO2. The valence band structure of ML MoSe2/h-BN/Rh(111) revealed by photoemission electron momentum microscopy (kPEEM) shows that the valence band maximum located at the K point is 1.33 eV below the Fermi level (EF), whereas the energy difference between K and Γ points is determined to be 0.23 eV, demonstrating that the electronic properties, such as the direct band gap and the effective mass of ML MoSe2, are well preserved in MoSe2/h-BN heterostructures., The access was provided by the NFFA-Europe Infrastructure (proposal ID 121) under Horizon 2020 EU Funding Program. We thank N. Gambacorti for coordinating the access to the NFFA-EU program. This work was financially supported by the European Research Council (Grant No. 240076) and has received funding from the European Union’s Horizon 2020 research and innovation programme under Grant Agreement Nos. 696656 and 785219 (Graphene Flagship Core 1 and Core 2). M.P. acknowledges support by the Swiss National Science Foundation (Grant No. 200021-162612).

Toward the large-area deposition of MoS

Raman spectroscopic maps were used to study the local properties of graphene films as grown on corrugated copper foils, by chemical vapour deposition, and after transfer onto SiO2(300 nm)/Si substrates. Analysis of the Raman peaks show the films exhibit a striped periodic pattern of single- and bi-layer graphene. By performing simultaneous AFM–Raman line maps of the as grown film on Cu we find that the layer growth shows a strong correlation to substrate topography. As a result, compressively strained non-AB stacked bi-layer graphene forms preferentially along the ridges, whilst single-layer graphene grows inside the trenches, of the Cu foil topography. These experimental results suggest that surface mobility is not the dominating factor determining control of layer number in such growth regimes.

The synthesis of wafer-scale single crystal graphene remains a challenge toward the utilization of its intrinsic properties in electronics. Until now, the large-area chemical vapor deposition of graphene has yielded a polycrystalline material, where grain boundaries are detrimental to its electrical properties. Here, we study the physicochemical mechanisms underlying the nucleation and growth kinetics of graphene on copper, providing new insights necessary for the engineering synthesis of wafer-scale single crystals. Graphene arises from the crystallization of a supersaturated fraction of carbon-adatom species, and its nucleation density is the result of competition between the mobility of the carbon-adatom species and their desorption rate. As the energetics of these phenomena varies with temperature, the nucleation activation energies can span over a wide range (1-3 eV) leading to a rational prediction of the individual nuclei size and density distribution. The growth-limiting step was found to be the attachment of carbon-adatom species to the graphene edges, which was independent of the Cu crystalline orientation.

We demonstrate low operating voltage (

The discovery of uniform deposition of high-quality single layered graphene on copper has generated significant interest. That interest has been translated into rapid progress in terms of large area deposition of thin films via transfer onto plastic and glass substrates. The opto-electronic properties of the graphene thin films reveal that they are of very high quality with transmittance and conductance values of >90% and 30Ω/sq, both are comparable to the current state-of-the-art indium tin oxide transparent conductor. In this Feature Article, we provide a detailed and up to date description of the literature on the subject as well as highlighting challenges that must be overcome for the utilization of graphene deposited on copper substrates by chemical vapour deposition.

Transport properties of progressively reduced graphene oxide (GO) are described. Evolution of the electronic properties reveals that as-synthesized GO undergoes insulator−semiconductor−semimetal transitions with reduction. The apparent transport gap ranges from 10 to 50 meV and approaches zero with extensive reduction. Measurements at varying degrees of reduction reveal that transport in reduced GO occurs via variable-range hopping and further reduction leads to an increased number of available hopping sites.

We report the design, construction, and characterisation of a five-component cellular fluorescence-based thermometer and its individual parts, built from the bottom up in Escherichia coli. The sensing mechanism is based on the temperature-sensitive regulatory activity of the mutated LacIts transcription factor. Such microscale temperature sensors have potential applications in the measurement of temperature gradients on 2D and 3D contours and in microelectromechanical system (MEMS) devices.

Using laboratory X-ray photoelectron emission microscopy (XPEEM), we investigated the doping efficiency and thermal stability of iodine on as-grown graphene on Pt. After iodine adsorption of graphene in saturated vapor of I-2, monolayer and bilayer graphene exhibited work function of 4.93 eV and 4.87 eV, respectively. Annealing of the doped monolayer graphene at 100 degrees C led to desorption of hydrocarbons, which increased the work function of monolayer graphene by similar to 0.2 eV. The composition of the polyiodide complexes evolved upon a step-by-step annealing at temperatures from 100 degrees C to 300 degrees C while the work-function non-monotonically changed with decreasing iodine content. The iodine dopant was stable at relatively high temperature as a significant amount of iodine remained up to the annealing temperature of 350 degrees C. (C) 2015 Elsevier B.V. All rights reserved.

Large area thin films of few-layered unfunctionalized graphene platelets are developed with fine control over the thickness. The thin films are obtained by a Langmuir–Blodgett assembly at the interface of graphene solution in N-methyl-2-pyrrolidone (NMP) and water, and their optoelectronic properties and conduction mechanism are investigated in relation to lateral flake size and thin film thickness. The electrical conductivity and carrier mobility are affected by the flake size (200 nm to 1 μm) and by the packing of the nanostructure platelet network. General effective medium theory is used to explain the thickness dependent conductivity and to determine the percolation threshold film thickness which was found to be about 10 nm (at a volume fraction of ∼39%) for a Langmuir–Blodgett film of an average platelet lateral size of 170 ± 40 nm. The electronic behaviour of the material shows more similarities with polycrystalline turbostratic graphite than thin films of reduced graphene oxide, carbon nanotubes, or disordered conducting polymers. While in these systems the conduction mechanism is often dominated by the presence of an energy barrier between conductive and non-conductive regions in the network, in the exfoliated graphene networks the conduction mechanism can be explained by the simple two-band model which is characteristic of polycrystalline graphite.

The epitaxial growth of graphene on copper foils is a complex process, influenced by thermodynamic, kinetic, and growth parameters, often leading to diverse island shapes including dendrites, squares, stars, hexagons, butterflies, and lobes. Here, we introduce a phase-field model that provides a unified description of these diverse growth morphologies and compare the model results with new experiments. Our model explicitly accounts for the anisotropies in the energies of growing graphene edges, kinetics of attachment of carbon at the edges, and the crystallinity of the underlying copper substrate (through anisotropy in surface diffusion). We show that anisotropic diffusion has a very important, counterintuitive role in the determination of the shape of islands, and we present a "phase diagram" of growth shapes as a function of growth rate for different copper facets. Our results are shown to be in excellent agreement with growth shapes observed for high symmetry facets such as (111) and (001) as well as for high-index surfaces such as (221) and (310).

We have evaluated as-grown $\mathrm{Mo}{\mathrm{S}}_{2}$ crystals, epitaxially grown on a monocrystalline sapphire by chemical vapor deposition (CVD), with direct electronic band-structure measurements by energy-filtered $k$-space photoelectron emission microscopy performed with a conventional laboratory vacuum ultraviolet He I light source under off-normal illumination. The valence states of the epitaxial $\mathrm{Mo}{\mathrm{S}}_{2}$ were mapped in momentum space down to 7 eV below the Fermi level. Despite the high nucleation density within the imaged area, the CVD $\mathrm{Mo}{\mathrm{S}}_{2}$ possesses an electronic structure similar to the free-standing monolayer $\mathrm{Mo}{\mathrm{S}}_{2}$ single crystal, and it exhibits hole effective masses of $2.41\ifmmode\pm\else\textpm\fi{}0.05\phantom{\rule{0.16em}{0ex}}{m}_{0}$, and $0.81\ifmmode\pm\else\textpm\fi{}0.05\phantom{\rule{0.16em}{0ex}}{m}_{0}$, respectively, at \ensuremath{\Gamma} and $K$ high-symmetry points that are consistent with the van der Waals epitaxial growth mechanism. This demonstrates the excellent ability of the $\mathrm{Mo}{\mathrm{S}}_{2}$ CVD on sapphire to yield a highly aligned growth of well-stitched grains through epitaxial registry with a strongly preferred crystallographic orientation.

Epitaxial growth in strained asymmetric, dislocation-free, coherent, alloy films is explored. Linear-stability analysis is used to theoretically analyze the coupled instability arising jointly from the substrate-film lattice mismatch (morphological instability) and the spinodal decomposition mechanism. Both the static and growing films are considered. Role of various parameters in determining stability regions for a coherent growing alloy film is investigated. In addition to the usual parameters: lattice mismatch {epsilon}, solute-expansion coefficient {eta}, growth velocity V, and growth temperature T, we consider the alloy asymmetry arising from its mean composition. The dependence of elastic moduli on composition fluctuations and the coupling between top surface and underlying bulk of the film also play important roles. The theory is applied to group III-V films such as GaAsN, InGaN, and InGaP and to group IV Si-Ge films at temperatures below the bare critical temperature T{sub c} for strain-free spinodal decomposition. The dependences of various material parameters on mean concentration and temperature lead to significant qualitative changes.

The deposition of atomically thin highly uniform chemically derived graphene (CDG) films on 300 mm SiO2/Si wafers is reported. We demonstrate that the very thin films can be lifted off to form uniform membranes than can be free-standing or transferred onto any substrate. Detailed maps of thickness using Raman spectroscopy and atomic force microscopy (AFM) height profiles reveal that the film thickness is very uniform and highly controllable, ranging from 1-2 layers up to 30 layers. After reduction using a variety of methods, the CDG films are transparent and electrically active with FET devices yielding exceptionally high mobilities of ~ 15 cm2/Vs and sheet resistance of ~ 1 k Ohm/sq at ~ 70 % transparency., Comment: 11 pages, 4 figures. accepted to ACS Nano

A challenge in exploiting the electrical properties of graphene is the fabrication of large area thin films in a scalable and inexpensive manner. The lack of a reliable and simple graphite exfoliation procedure has hindered the possibility of making films starting from pure graphene. Recently it has suggested that organic solvents with surface energies close to the graphene, are able to exfoliate flakes by ultrasonication [1], generating a stable suspension of graphene sheets. Of these, exfoliation with 1-Methyl-2-pyrrolidinone (NMP) yielded the highest concentration of 1–5 graphene layers [1]. Here we present a scalable manner to obtain films of pure graphene on virtually any substrate with reproducible nanometric control over the number of layers and their optical and electronic characteristics.

Currently the Java programming language is popularly used in Internet-based systems, mobile and ubiquitous devices because of its portability and programability. However, inherently its performance is sometimes very limited due to interpretation overhead of class files by Java Virtual Machines (JVMs). In this paper, as one of the solutions to resolve the performance limitation, we present code generation and optimization techniques for a Java-to-C translator. Our compiler framework translates Java bytecode into C codes with preserving Java’s programming semantics, such as inheritance, method overloading, virtual method invocation, garbage collection, and so on. Moreover, our compiler translates for in Java into for in C instead of test and jump for better performance. Our runtime library fully supports Connected Limited Device Configuration (CLDC) 1.0 API’s.

We report on the efficiency and thermal stability of p-doping by iodine on single and randomly stacked, weakly coupled bilayer polycrystalline graphene, as directly measured by photoelectron emission microscopy. The doping results in work function value increase of 0.4–0.5 eV, with a higher degree of iodine uptake by the bilayer (2%) as compared to the single layer (1%) suggesting iodine intercalation in the bilayer. The chemistry of iodine is identified accordingly as I3− and I5− poly iodide anionic complexes with slightly higher concentration of I5− in bilayer than monolayer graphene, likely attributed to differences in doping mechanisms. Temperature dependent in-situ annealing of the doped films demonstrated that the doping remains efficient up to 200 °C.

We report the fabrication, at low-temperature, of solution processed graphene transistors based on carefully engineered graphene/organic dielectric interfaces. Graphene transistors based on these interfaces show improved performance and reliability when compared with traditional SiO(2) based devices. The dielectric materials investigated include Hyflon AD (Solvay), a low-k fluoropolymer, and various organic self-assembled monolayer (SAM) nanodielectrics. Both types of dielectric are solution processed and yield graphene transistors with similar operating characteristics, namely high charge carrier mobility, hysteresis free operation, negligible doping effect and improved operating stability as compared to bare SiO(2) based devices. Importantly, the use of SAM nanodielectrics enables the demonstration of low operating voltage (|1.5| V), solution-processable and flexible graphene transistors with tunable doping characteristics through molecular engineering of the SAM's molecular length and terminal group. The work is a significant step towards graphene microelectronics where large-volume and low-temperature processing are required.

High-quality and large-scale growth of monolayer molybdenum disulfide (MoS2) has caught intensive attention because of its potential in many applications due to unique electronic properties. Here, we report the wafer-scale growth of high-quality monolayer MoS2 on singlecrystalline sapphire and also on SiO2 substrates by a facile metal-organic chemical vapor deposition (MOCVD) method. Prior to growth, an aqueous solution of sodium molybdate (Na2MoO4) is spun onto the substrates as the molybdenum precursor and diethyl sulfide ((C2H5)(2)S) is used as the sulfur precursor during the growth. The grown MoS2 films exhibit crystallinity, good electrical performance (electron mobility of 22 cm(2)center dot V-1 center dot s(-1)) and structural continuity maintained over the entire wafer. The sapphire substrates are reusable for subsequent growth. The same method is applied for the synthesis of tungsten disulfide (WS2). Our work provides a facile, reproducible and cost-efficient method for the scalable fabrication of high-quality monolayer MoS2 for versatile applications, such as electronic and optoelectronic devices as well as the membranes for desalination and power generation.

Vertical heterostructures of MoS2 and WSe2 layers are studied by spectroscopic photoemission electron microscopy as an effective technique for correlating chemical and electronic states at the micrometer scale. Element-specific, surface-sensitive images recorded at high lateral and energy resolution from core-level photoelectrons using different laboratory excitation sources are postprocessed to obtain laterally resolved maps of elemental composition and energy shifts in the Mo3d spectra of a few hundred meV. For monolayer MoS2, the method reveals substrate-dependent charge transfer properties within the narrow energy range of 360 meV, with MoS2 becoming more n-type after transfer onto WSe2. The band structure data from momentum microscopy taken over the same areas confirm the charge transfer from WSe2 to MoS2 by the shift of the K-bands away from the Fermi level and illustrates the layer-specific contributions to the electronic band structure of the heterostructure. From work function mapping, the reconstructed energy-level diagram reveals a type II heterostructure but with a very small conduction-band offset.