1. Optically Induced Phase Change for Magnetoresistance Modulation
- Author
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Kai Liu, Yanxue Chen, Stéphane Mangin, Dong Wang, Eric E. Fullerton, Xiaofei Fan, Guodong Wei, Kun Deng, Na Lei, Xinhe Wang, Zhizhong Si, Weisheng Zhao, Xiaoyang Lin, Kaili Jiang, Fert Beijing Institute and School of Electronic and Information Engineering, Beihang University (BUAA), Institute of Computing Technology, Chinese Academy of Sciences, Department of Molecular and Cellular Biochemistry, Ohio State University [Columbus] (OSU), Sciences pour l'environnement (SPE), Centre National de la Recherche Scientifique (CNRS)-Université Pascal Paoli (UPP), Institut Jean Lamour (IJL), Université de Lorraine (UL)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Hitachi San Jose Research Center, Impact N4S, and ANR-15-IDEX-0004,LUE,Isite LUE(2015)
- Subjects
Nuclear and High Energy Physics ,Materials science ,Magnetoresistance ,Magnetism ,02 engineering and technology ,01 natural sciences ,Electrical resistivity and conductivity ,0103 physical sciences ,Electrical and Electronic Engineering ,010306 general physics ,Anisotropy ,Mathematical Physics ,[PHYS]Physics [physics] ,Spintronics ,business.industry ,Statistical and Nonlinear Physics ,Heterojunction ,Coercivity ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Electronic, Optical and Magnetic Materials ,Magnetic anisotropy ,Computational Theory and Mathematics ,Optoelectronics ,0210 nano-technology ,business - Abstract
International audience; Optical methods for magnetism manipulation have been considered as a promising strategy for ultralow-power and ultrahigh-speed data storage and processing, which have become an emerging field of spintronics. However, a widely applicable and efficient method has rarely been demonstrated. Here, the strongly correlated electron material vanadium dioxide (VO 2) is used to realize the optically induced phase change for control of the magnetism in NiFe. The NiFe/VO 2 bilayer heterostructure features appreciable modulations of electrical conductivity (32%), coercivity (37.5%), and magnetic anisotropy (25%). Further analyses indicate that interfacial strain coupling plays a crucial role in the magnetic modulation. Utilizing this heterostructure, which can respond to both optical and magnetic stimuli, a phase change controlled anisotropic mag-netoresistance (AMR) device is fabricated, and reconfigurable Boolean logics are implemented. As a demonstration of phase change spintronics, this work may pave the way for next-generation opto-electronics in the post-Moore era.
- Published
- 2020