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Optically Induced Phase Change for Magnetoresistance Modulation

Authors :
Kai Liu
Yanxue Chen
Stéphane Mangin
Dong Wang
Eric E. Fullerton
Xiaofei Fan
Guodong Wei
Kun Deng
Na Lei
Xinhe Wang
Zhizhong Si
Weisheng Zhao
Xiaoyang Lin
Kaili Jiang
Fert Beijing Institute and School of Electronic and Information Engineering
Beihang University (BUAA)
Institute of Computing Technology, Chinese Academy of Sciences
Department of Molecular and Cellular Biochemistry
Ohio State University [Columbus] (OSU)
Sciences pour l'environnement (SPE)
Centre National de la Recherche Scientifique (CNRS)-Université Pascal Paoli (UPP)
Institut Jean Lamour (IJL)
Université de Lorraine (UL)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)
Hitachi San Jose Research Center
Impact N4S
ANR-15-IDEX-0004,LUE,Isite LUE(2015)
Source :
Advanced Quantum Technologies, Advanced Quantum Technologies, Wiley, 2020, ⟨10.1002/qute.201900104⟩
Publication Year :
2020
Publisher :
HAL CCSD, 2020.

Abstract

International audience; Optical methods for magnetism manipulation have been considered as a promising strategy for ultralow-power and ultrahigh-speed data storage and processing, which have become an emerging field of spintronics. However, a widely applicable and efficient method has rarely been demonstrated. Here, the strongly correlated electron material vanadium dioxide (VO 2) is used to realize the optically induced phase change for control of the magnetism in NiFe. The NiFe/VO 2 bilayer heterostructure features appreciable modulations of electrical conductivity (32%), coercivity (37.5%), and magnetic anisotropy (25%). Further analyses indicate that interfacial strain coupling plays a crucial role in the magnetic modulation. Utilizing this heterostructure, which can respond to both optical and magnetic stimuli, a phase change controlled anisotropic mag-netoresistance (AMR) device is fabricated, and reconfigurable Boolean logics are implemented. As a demonstration of phase change spintronics, this work may pave the way for next-generation opto-electronics in the post-Moore era.

Details

Language :
English
ISSN :
25119044
Database :
OpenAIRE
Journal :
Advanced Quantum Technologies, Advanced Quantum Technologies, Wiley, 2020, ⟨10.1002/qute.201900104⟩
Accession number :
edsair.doi.dedup.....7514f17777c8bf4369a2551fe1f03bcd