176 results on '"Hild, K."'
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2. MOVPE growth and characterization of quaternary Ga(PAsBi)/GaAs alloys for optoelectronic applications
3. NUTMEG: a neuromagnetic source reconstruction toolbox.
4. Bismide-Based Photonic Devices for Near- and Mid-Infrared Applications
5. P01.03. A machine classification measure of meditation ability
6. Bismide-Based Photonic Devices for Near- and Mid-Infrared Applications
7. Analysis of reflectance and modulation spectroscopic lineshapes in optoelectronic device structures
8. Characterization of 2.3 µm GaInAsSb-based vertical-cavity surface-emitting laser structures using photo-modulated reflectance.
9. Temperature-dependent line widths of single excitons and biexcitons
10. Non-destructive Photo-modulated Reflectance Study of GalnAsSb- based VCSEL
11. The electronic band structure of GaBiAs/GaAs layers: Influence of strain and band anti-crossing.
12. Phonon interaction of single excitons in CdSe/ZnSe quantum dot structures
13. Magnetic moment investigation of epitaxial magnetite thin films
14. Temperature stable mid-infrared GaInAsSb/GaSb Vertical Cavity Surface Emitting Lasers (VCSELs)
15. Impact of alloy disorder on the band structure of compressively strained GaBixAs1-x
16. Guarantee of the accuracy of force
17. Bismuth-based semiconductors for mid-infrared photonic devices
18. Properties of hybrid MOVPE/MBE grown GaAsBi/GaAs based near-infrared emitting quantum well lasers
19. Band Alignment and Carrier Recombination in GaAsSb/GaAs Quantum Wells
20. Electrically injected GaAsBi Quantum Well Lasers
21. Physical properties and optimization of GaBiAs/(Al)GaAs based near-infrared laser diodes grown by MOVPE with up to 4.4% Bi
22. Growth and characterisation of Ga(NAsBi) alloy by metal–organic vapour phase epitaxy
23. Photoreflectance of a 2.3μm GaInAsSb-based VCSEL structure for gas sensing applications
24. Characterization of 2.3 μm GaInAsSb-based vertical-cavity surface-emitting laser structures using photo-modulated reflectance
25. The influence of growth conditions on carrier recombination mechanisms in 1.3 mu m GaAsSb/GaAs quantum well lasers
26. Dominance of the first excitation step for magnetic circular dichroism in near-threshold two-photon photoemission
27. The electronic band structure of GaBiAs/GaAs layers: Influence of strain and band anti-crossing
28. Cavity mode gain alignment in GaAsSb-based near-infrared vertical cavity lasers studied by spectroscopy and device measurements
29. Influence of de-tuning and non-radiative recombination on the temperature dependence of 1.3 mu m GaAsSb/GaAs vertical cavity surface emitting lasers
30. Energy- and angle-dependent threshold photoemission magnetic circular dichroism from an ultrathin Co/Pt(111) film
31. Magnetic Circular Dichroism in Two-Photon Photoemission
32. Electrical injection Ga(AsBi)/(AlGa)As single quantum well laser
33. The influence of growth conditions on carrier recombination mechanisms in 1.3 μm GaAsSb/GaAs quantum well lasers
34. Auger recombination suppression and band alignment in GaAsBi/GaAs heterostructures
35. Carrier recombination in 1.3 mu m GaAsSb/GaAs quantum well lasers
36. Photoreflectance of a 2.3μm GalnAsSb-based VCSEL structure for gas sensing applications.
37. Temperature and Bi-concentration dependence of the bandgap and spin-orbit splitting in InGaBiAs/InP semiconductors for mid-infrared applications
38. InGaBiAs/InP semiconductors for mid-infrared applications: Dependence of bandgap and spin-orbit splitting on temperature and bismuth content
39. Improved accuracy using recursive Bayesian estimation based language model fusion in ERP-based BCI typing systems
40. Cavity mode gain alignment in GaAsSb-based near-infrared vertical cavity lasers studied by spectroscopy and device measurements
41. Recombination mechanisms and band alignment of GaAs1−xBix/GaAs light emitting diodes
42. Dominance of the first excitation step for magnetic circular dichroism in near-threshold two-photon photoemission
43. The potential role of Bismide alloys in future photonic devices
44. Energy- and angle-dependent threshold photoemission magnetic circular dichroism from an ultrathin Co/Pt(111) film
45. Influence of device structures on carrier recombination in GaAsSb/GaAs QW lasers
46. Threshold photoemission magnetic circular dichroism at the spin-reorientation transition of ultrathin epitaxial Pt/Co/Pt(111)/W(110) films
47. Magnetic Circular Dichroism in Two-Photon Photoemission
48. Thermal characteristics of 1.3μm GaAsSb/GaAs-based edge- and surface-emitting lasers
49. Optical magnetic circular dichroism in threshold photoemission from a magnetite thin film
50. Solid state reaction at the interface between Heusler alloys and Al cap accelerated by elevated temperature and rough surface
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