140 results on '"Hammons, B. E."'
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2. Metalorganic vapor phase epitaxial growth of all-AlGaAs visible (∼700 nm) vertical-cavity surface-emitting lasers on misoriented substrates
3. Tertiarybutylarsine for Metalorganic Chemical Vapor Deposition Growth of High Purity, High Uniformity Films
4. Rapid-thermal annealing for quantum-well heterostructure device fabrication
5. X-ray reciprocal-space mapping of strain relaxation and tilting in linearly graded InAlAs buffers.
6. Built-in biaxial strain dependence of Γ-X transport in GaAs/InxAl1-xAs/GaAs pseudomorphic heterojunction barriers (x=0, 0.03, and 0.06).
7. Metal-sulfur-based air-stable passivation of GaAs with very low surface-state densities
8. Radiation hardened, optically-triggered thyristor switches: Preliminary data on three device designs
9. Origin of the time dependence of wet oxidation of AlGaAs
10. InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs
11. Coherent Dynamics of Excitonic Nonlinear Optical Response in the Nonperturbative Regime
12. Stimulated emission from GaAs quantum well microcavities: toward laser emission from a few excitons
13. Applications of photonic crystals in optoelectronics
14. Growth of InGaAs multi-quantum wells at 1.3 μm wavelength on GaAs compliant substrates
15. Coupled-resonator vertical-cavity laser
16. Uniformity and performance of selectively oxidized VCSEL arrays
17. Biexcitonic effects in the nonperturbative regime of semiconductor microcavities
18. Monolithic wavelength-graded VCSEL and wavelength-selective photodetector arrays for WDM applications
19. Laser emission from semiconductor microcavities: Transition from nonperturbative to perturbative regimes
20. Laser emission from semiconductor microcavities: The role of cavity polaritons
21. Dislocation-free InSb grown on GaAs compliant universal substrates
22. Long wavelength (1.3 μm) vertical-cavity surface-emitting lasers with a wafer-bonded mirror and an oxygen-implanted confinement region
23. Wet oxidation of AlxGa1−xAs: Temporal evolution of composition and microstructure and the implications for metal-insulator-semiconductor applications
24. Cavity structures for low-loss oxide-confined VCSELs
25. Highly uniform and reproducible visible to near-infrared vertical-cavity surface-emitting lasers grown by MOVPE
26. Lattice engineered compliant substrate for defect-free heteroepitaxial growth
27. High-Speed 850 nm Oxide-Confined Vertical Cavity Surface Emitting Lasers
28. Field-Dependent Transverse Confinement within Selectively Oxidized Microcavities
29. Intracavity spectroscopy in vertical cavity surface-emitting lasers for micro-optical-mechanical systems
30. Selective oxidation of buried AlGaAs versus AlAs layers
31. 2×106 cm2/V s electron mobility by metalorganic chemical vapor deposition with tertiarybutylarsine
32. High quality single and double two-dimensional electron gases grown by metalorganic vapor phase epitaxy
33. Surface-emitting semiconductor laser for intracavity spectroscopy and microscopy
34. Surface-emitting semiconductor laser spectroscopy and microscopy for characterizing normal and sickled red blood cells
35. Spectrally and temporally resolved laser emission from vertical cavity surface emitting lasers
36. Built‐in biaxial strain dependence of Γ‐Xtransport in GaAs/InxAl1−xAs/GaAs pseudomorphic heterojunction barriers (x=0, 0.03, and 0.06)
37. Power broadening of coherent energy transfer in semiconductor gain media
38. Molecular beam epitaxy grown III–V strain relaxed buffer layers and superlattices characterized by atomic force microscopy
39. Ultraviolet photosulfidation of III–V compound semiconductors for electronic passivation
40. Semiconductor microcavity lasers
41. Fabrication of high-performance GaAs/AlGaAs optical phase modulators for microwave/photonic integrated circuits
42. Phase-locked arrays of vertical-cavity surface-emitting lasers
43. Injection-induced instabilities and local gain modification in VCSELs
44. Ultraviolet photosulfidation of III‐V compound semiconductors: A new approach to surface passivation
45. Optical properties of two‐dimensional photonic lattices fabricated as honeycomb nanostructures in compound semiconductors
46. Stimulated emission from GaAs quantum well microcavities: toward laser emission from a few excitons.
47. Acceleration of coherent transfer of energy by stimulated emission and absorption
48. Low‐voltage vertical‐cavity transmission modulator for 1.06 μm
49. Strain-relaxed InGaAs buffer layers grown by molecular-beam epitaxy for 1.3 μm Fabry–Pérot optical modulators
50. Optical properties of fractal quantum wells
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