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Cavity magnonics deals with the interaction of magnons - elementary excitations in magnetic materials - and confined electromagnetic fields. We introduce the basic physics and review the experimental and theoretical progress of this young field that is gearing up for integration in future quantum technologies. Much of its appeal is derived from the strong magnon-photon coupling and the easily-reached nonlinear regime in microwave cavities. The interaction of magnons with light as detected by Brillouin light scattering is enhanced in magnetic optical resonators, which can be employed to manipulate magnon distributions. The cavity photon-mediated coupling of a magnon mode to a superconducting qubit enables measurements in the single magnon limit., Comment: review article, 54 pages

We report fast charge state readout of a double quantum dot in a CMOS split-gate silicon nanowire transistor via the large dispersive interaction with microwave photons in a lumped-element resonator formed by hybrid integration with a superconducting inductor. We achieve a coupling rate $g_0/(2\pi) = 204 \pm 2$ MHz by exploiting the large interdot gate lever arm of an asymmetric split-gate device, $\alpha=0.72$, and by inductively coupling to the resonator to increase its impedance, $Z_\text{r}=560~\Omega$. In the dispersive regime, the large coupling strength at the double quantum dot hybridisation point produces a frequency shift comparable to the resonator linewidth, the optimal setting for maximum state visibility. We exploit this regime to demonstrate rapid dispersive readout of the charge degree of freedom, with a SNR of 3.3 in 50 ns. In the resonant regime, the fast charge decoherence rate precludes reaching the strong coupling regime, but we show a clear route to spin-photon circuit quantum electrodynamics using hybrid CMOS systems., Comment: Accepted manuscript

Recent ferromagnetic resonance experiments and theory of Pt/Nb/Ni8Fe2 proximity-coupled structures strongly suggest that spin-orbit coupling (SOC) in Pt in conjunction with a magnetic exchange field in Ni8Fe2 are the essential ingredients to generate a pure spin supercurrent channel in Nb. Here, by substituting Pt for a perpendicularly magnetized Pt/Co/Pt spin-sink, we are able to demonstrate the role of SOC, and show that pure spin supercurrent pumping efficiency across Nb is tunable by controlling the magnetization direction of Co. By inserting a Cu spacer with weak SOC between Nb and Pt/(Co/Pt) spin-sink, we also prove that Rashba type SOC is key for forming and transmitting pure spin supercurrents across Nb. Finally, by engineering these properties within a single multilayer structure, we demonstrate a prototype superconducting spin-wave (SW) device in which lateral SW propagation is gateable via the opening or closing of a vertical pure spin supercurrent channel in Nb., Comment: 28 pages, 4 figures

Recent experiments on strongly coupled microwave and ferromagnetic resonance modes have focused on large volume bulk crystals such as yttrium iron garnet, typically of millimeter-scale dimensions. We extend these experiments to lower volumes of magnetic material by exploiting low-impedance lumped-element microwave resonators. The low impedance equates to a smaller magnetic mode volume, which allows us to couple to a smaller number of spins in the ferromagnet. Compared to previous experiments, we reduce the number of participating spins by two orders of magnitude, while maintaining the strength of the coupling rate. Strongly coupled devices with small volumes of magnetic material may allow the use of spin orbit torques, which require high current densities incompatible with existing structures.

We present a sensitive, tunable radio-frequency resonator designed to detect reactive changes in nanoelectronic devices down to dilution refrigerator temperatures. The resonator incorporates GaAs varicap diodes to allow electrical tuning of the resonant frequency and the coupling to the input line. We find a resonant frequency tuning range of 8.4 MHz at 55 mK that increases to 29 MHz at 1.5 K. To assess the impact on performance of different tuning conditions, we connect a quantum dot in a silicon nanowire field-effect transistor to the resonator, and measure changes in the device capacitance caused by cyclic electron tunneling. At 250 mK, we obtain an equivalent charge sensitivity of $43~\mu e / \sqrt{\text{Hz}}$ when the resonator and the line are impedance-matched and show that this sensitivity can be further improved to $31~\mu e / \sqrt{\text{Hz}}$ by re-tuning the resonator. We understand this improvement by using an equivalent circuit model and demonstrate that for maximum sensitivity to capacitance changes, in addition to impedance matching, a high-quality resonator with low parasitic capacitance is desired., Comment: Includes supplementary information

Temperature is a fundamental parameter in the study of physical phenomena. At the nanoscale, local temperature differences can be harnessed to design novel thermal nanoelectronic devices or test quantum thermodynamical concepts. Determining temperature locally is hence of particular relevance. Here, we present a primary electron thermometer that allows probing the local temperature of a single electron reservoir in single-electron devices. The thermometer is based on cyclic electron tunneling between a system with discrete energy levels and a single electron reservoir. When driven at a finite rate, close to a charge degeneracy point, the system behaves like a variable capacitor whose magnitude and line-shape varies with temperature. In this experiment, we demonstrate this type of thermometer using a quantum dot in a CMOS nanowire transistor. We drive cyclic electron tunneling by embedding the device in a radio-frequency resonator which in turn allows us to read the thermometer dispersively. We find that the full width at half maximum of the resonator phase response depends linearly with temperature via well known physical law by using the ratio $k_\text{B}/e$ between the Boltzmann constant and the electron charge. Overall, the thermometer shows potential for local probing of fast heat dynamics in nanoelectronic devices and for seamless integration with silicon-based quantum circuits.

Developing fast, accurate and scalable techniques for quantum state readout is an active area in semiconductor-based quantum computing. Here, we present results on dispersive sensing of silicon corner state quantum dots coupled to lumped-element electrical resonators via the gate. The gate capacitance of the quantum device is configured in parallel with a superconducting spiral inductor resulting in resonators with loaded Q-factors in the 400-800 range. For a resonator operating at 330 MHz, we achieve a charge sensitivity of 7.7 $\mu$e$/\sqrt{\text{Hz}}$ and, when operating at 616 MHz, we get 1.3 $\mu$e$/\sqrt{\text{Hz}}$. We perform a parametric study of the resonator to reveal its optimal operation points and perform a circuit analysis to determine the best resonator design. The results place gate-based sensing at par with the best reported radio-frequency single-electron transistor sensitivities while providing a fast and compact method for quantum state readout.