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Abstract Optoelectronic synapses, leveraging the integration of classic photo-electric effect with synaptic plasticity, are emerging as building blocks for artificial vision and photonic neuromorphic computing. However, the fundamental working principles of most optoelectronic synapses mainly rely on physical behaviors while missing chemical-electric synaptic processes critical for mimicking biorealistic neuromorphic functionality. Herein, we report a photoelectrochemical synaptic device based on p-AlGaN/n-GaN semiconductor nanowires to incorporate chemical-electric synaptic behaviors into optoelectronic synapses, demonstrating unparalleled dual-modal plasticity and chemically-regulated neuromorphic functions through the interplay of internal photo-electric and external electrolyte-mediated chemical-electric processes. Electrical modulation by implementing closed or open-circuit enables switching of optoelectronic synaptic operation between short-term and long-term plasticity. Furthermore, inspired by transmembrane receptors that connect extracellular and intracellular events, synaptic responses can also be effectively amplified by applying chemical modifications to nanowire surfaces, which tune external and internal charge behaviors. Notably, under varied external electrolyte environments (ion/molecule species and concentrations), our device successfully mimics chemically-regulated synaptic activities and emulates intricate oxidative stress-induced biological phenomena. Essentially, we demonstrate that through the nanowire photoelectrochemical synapse configuration, optoelectronic synapses can be incorporated with chemical-electric behaviors to bridge the gap between classic optoelectronic synapses and biological synapses, providing a promising platform for multifunctional neuromorphic applications.

Highlights A novel photoelectrochemical (PEC) photosensor composed of GaN nanowire-on-Si platform demonstrates record-high responsivity of 247.8 mA W−1 with ultra-stable operation characteristics. Strategic internal and external band structure engineering of semiconductor nanowires promotes efficient PEC reaction via controlling carrier dynamics while preserving nanowires from material degradation. The glucose sensing system is constructed to successfully analyze blood glucose levels in real human serum samples, featuring a high sensitivity of 0.173 µA µM−1 cm−2 and a low detection limit of 0.07 µM.

Abstract Delafossite semiconductors have attracted substantial attention in the field of electro-optics owing to their unique properties and availability of p-type materials that are applicable for solar cells, photocatalysts, photodetectors (PDs) and p-type transparent conductive oxides (TCOs). The CuGaO2 (CGO), as one of the most promising p-type delafossite materials, has appealing electrical and optical properties. In this work, we are able to synthesize CGO with different phases by adopting solid-state reaction route using sputtering followed by heat treatment at different temperatures. By examining the structural properties of CGO thin films, we found that the pure delafossite phase appears at the annealing temperature of 900 °C. While at lower temperatures, delafossite phase can be observed, but along with spinel phase. Furthermore, their structural and physical characterizations indicate an improvement of material-quality at temperatures higher than 600 °C. Thereafter, we fabricated a CGO-based ultraviolet-PD (UV-PD) with a metal–semiconductor-metal (MSM) configuration which exhibits a remarkable performance compared to the other CGO-based UV-PDs and have also investigated the effect of metal contacts on the device performance. We demonstrate that UV-PD with the employment of Cu as the electrical contact shows a Schottky behavior with a responsivity of 29 mA/W with a short response time of 1.8 and 5.9 s for rise and decay times, respectively. In contrast, the UV-PD with Ag electrode has shown an improved responsivity of about 85 mA/W with a slower rise/decay time of 12.2/12.8 s. Our work sheds light on the development of p-type delafossite semiconductor for possible optoelectronics application of the future.

ABSTRACT: This paper provides a comprehensive review of advanced radio frequency (RF) filter technologies available in miniature chip or integrated circuit (IC) form for wireless communication applications. The RF filter technologies were organized according to the timeline of their introduction, in conjunction with each generation of wireless (cellular) communication standards (1G to 5G). This approach enabled a clear explanation of the corresponding invention history, working principles, typical applications and future development trends. The article covered commercially successful acoustic filter technologies, including the widely used surface acoustic wave (SAW) and bulk acoustic wave (BAW) filters, as well as electromagnetic filter technologies based on low-temperature co-fired ceramic (LTCC) and integrated passive device (IPD). Additionally, emerging filter technologies such as IHP-SAW, suspended thin-film lithium niobate (LiNbO3 or LN) resonant devices and hybrid were also discussed. In order to achieve higher performance, smaller form factor and lower cost for the wireless communication industry, it is believed that fundamental breakthroughs in materials and fabrication techniques are necessary for the future development of RF filters.

A novel polarity-switchable photoelectrochemical photodetector based on III-nitride/MoSxcore-shell nanowires is constructed. Such unique device architecture provides a new route for multiple-band spectrally distinctive photodetection.

Abstract The weak dielectric screening in 2D semiconducting transition metal dichalcogenides give rise to strongly bound quasiparticles, which provides a platform to investigate the diverse excitonic phenomena and correlated physics. However, how to effectively control these quasiparticles is still a challenge for their applications in optoelectronic and valleytronic devices. Herein, by means of fabricating monolayer WSe2 and transition metal oxide (TMO) heterostructures, polaronic trion, that is a trion dressed with soft rotational optical (RO) phonons, is realized due to the strong interfacial coupling. This Fröhlich bound state of trion dramatically increases the trion binding energy (BE) from room temperature to 65 meV at 80 K in WSe2/LaAlO3 (LAO). However, the increase of the trion BE for WSe2/SrTiO3 (STO) occurs below the phase transition temperature. This work expands the possibilities of the TMDs/TMOs heterostructures and promotes the development of 2D van der Waals materials for quasiparticle‐based devices.

AlGaN nanorods have attracted increasing amounts of attention for use in ultraviolet (UV) optoelectronic devices. Here, self-assembled AlGaN nanorods with embedding quantum disks (Qdisks) were grown on Si(111) using plasma-assisted molecular beam epitaxy (PA-MBE). The morphology and quantum construction of the nanorods were investigated and well-oriented and nearly defect-free nanorods were shown to have a high density of about 2 × 1010 cm−2. By controlling the substrate temperature and Al/Ga ratio, the emission wavelengths of the nanorods could be adjusted from 276 nm to 330 nm. By optimizing the structures and growth parameters of the Qdisks, a high internal quantum efficiency (IQE) of the AlGaN Qdisk nanorods of up to 77% was obtained at 305 nm, which also exhibited a shift in the small emission wavelength peak with respect to the increasing temperatures during the PL measurements.

Summary: The carbon-free production of hydrogen from water splitting holds grand promise for the critical energy and environmental challenges. Herein, few-atomic-layers iron (FeFAL) anchored on GaN nanowire arrays (NWs) is demonstrated as a highly active hydrogen evolution reaction catalyst, attributing to the spatial confinement and the nitrogen-terminated surface of GaN NWs. Based on density functional theory calculations, the hydrogen adsorption on FeFAL:GaN NWs is found to exhibit a significantly low free energy of −0.13 eV, indicative of high activity. Meanwhile, its outstanding optoelectronic properties are realized by the strong electronic coupling between atomic iron layers and GaN(10ī0) together with the nearly defect-free GaN NWs. As a result, FeFAL:GaN NWs/n+-p Si exhibits a prominent current density of ∼ −30 mA cm−2 at an overpotential of ∼0.2 V versus reversible hydrogen electrode with a decent onset potential of +0.35 V and 98% Faradaic efficiency in 0.5 mol/L KHCO3 aqueous solution under standard one-sun illumination.

The non-centrosymmetric crystal structures of polar-semiconductors comprising GaN, InN, AlN, and ZnO intrigued the scientific community in investigating their potential for a strain-induced nano-energy generation. The coupled semiconducting and piezoelectric properties produce a piezo-potential that modulates the charge transport across their heterostructure interfaces. By using conductive-atomic force microscopy, we investigate the mechanism that gives rise to the piezotronic effect in AlGaN nanowires (NWs) grown on a molybdenum (Mo) substrate. By applying external bias and force on the NWs/Mo structure using a Pt–Ir probe, the charge transport across the two adjoining Schottky junctions is modulated due to the change in the apparent Schottky barrier heights (SBHs) that result from the strain-induced piezo-potential. We measured an increase in the SBH of 98.12 meV with respect to the background force, which corresponds to an SBH variation ∂ϕ∂F of 6.24 meV/nN for the semiconductor/Ti/Mo interface. The SBH modulation, which is responsible for the piezotronic effect, is further studied by measuring the temperature-dependent I–V curves from room temperature to 398 K. The insights gained from the unique structure of AlGaN NWs/Mo shed light on the electronic properties of the metal-semiconductor interfaces, as well as on the potential application of AlGaN NW piezoelectric nanomaterials in optoelectronics, sensors, and energy generation applications.

AlGaN-based deep UV (DUV) LEDs generally employ a p-type electron blocking layer (EBL) to suppress electron overflow. However, Al-rich III-nitride EBL can result in challenging p-doping and large valence band barrier for hole injection as well as epitaxial complexity. As a result, wall plug efficiency (WPE) can be compromised. Our systematic studies of band diagram and carrier concentration reveal that carrier concentrations in the quantum well and electron overflow can be significantly impacted because of the slope variation of the quantum barrier (QB) conduction and valence bands, which in turn influence radiative recombination and optical output power. Remarkably, grading the Al composition from 0.60 to 0.70 for the 12-nm-thick AlGaN QB of the DUV LED without the EBL can lead to 13.5% higher output power and similar level of overflown electron concentration (~1 × 1015/cm3) as opposed to the conventional DUV LED with the p-type EBL. This paradigm is significant for the pursuit of higher WPE or shorter emission wavelength for DUV LEDs and lasers, as it provides a new direction for addressing electron overflow and hole injection issues.

AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) suffer from severe quantum confined Stark effect (QCSE) due to the strong polarization field in the quantum wells (QWs) grown on c-plane substrates. In this paper, we propose a novel DUV LED structure embedded with graded QWs in which the Al composition was linearly changed to screen the QCSE. A significant increase of the internal quantum efficiency and thus an enhancement of the light output power by nearly 67% can be achieved, attributing to the improvement of the electron-hole wave function overlap (Γe-hh) to 58.6% in the Increased-Al-composition graded QWs, as compared to the QW without grading (Γe-hh = 40.4%) and reverse grading (Γe-hh = 33.6%). Further investigations show that the grading profile of the Al composition in the QWs, including either linearly increases or decreases along the growth direction and the thickness of graded QWs, determine the polarization electrical field in the QWs and as a result, significantly affecting the performance of the devices. In the end, a careful optimization of the graded QWs is called. The proposed structure with such unique graded QWs provides us an effective solution to suppress the QCSE effect in the pursuit of high-performance DUV emitters.

This paper presents a statistics-optimized organization technique to achieve better element matching in successive approximation register (SAR) analog-to-digital converter (ADC) in smart sensor systems. We demonstrate the proposed technique ability to achieve a significant improvement of around 23 dB on a spurious free dynamic range (SFDR) of the ADC than the conventional, testing with a capacitor mismatch σu = 0.2% in a 14-bit SAR ADC system. For the static performance, the max root mean square (rms) value of differential nonlinearity reduces from 1.63 to 0.20 LSB and the max rms value of integral nonlinearity (INL) reduces from 2.10 to 0.21 LSB. In addition, it is demonstrated that by applying grouping optimization and strategy optimization, the performance boosting on the SFDR can be effectively achieved. Such a great improvement on the resolution of the ADC only requires an off-line pre-processing digital part.

Deep-ultraviolet emitting structures based on Al0.65Ga0.35N/Al0.8Ga0.2 N multiple quantum wells (MQWs), embedded in compositionally graded AlxGa1-xN films in the form of graded-index-separate-confinement heterostructure, were grown by molecular beam epitaxy. The graded AlGaN layer blocked threading defects (TDs) in the vicinity of the AlN/AlGaN heterointerface, resulting in a reduction of the TDs in the active layer. The intensity of the transverse-magnetic polarized amplified spontaneous emission spectra with peak emission at 270 nm was found to increase linearly with the number of QWs. Furthermore, while the peak intensity for devices with a single QW varies linearly with the pump fluence, it varies superlinearly for larger number of QWs, suggesting light amplification by stimulated emission. These results are consistent with numerical simulations, which indicate that the confinement of the optical mode in this device structure increases with the number of QWs and simultaneously the threshold under optical pumping decreases with increasing of the number of QWs. Finally, the band structure simulations indicate that the device is in the form of a p-n junction due to polarization-induced p- and n-doping in the compositionally graded AlxGa1-xN films on either side of the MQWs, and, thus, could be used for the development of an electrically pumped deep-ultraviolet laser by further optimizing the structures.

The effects of 2-D hexagonal-lattice TiO2 photonic crystal layers on the directional light extraction efficiency of low-scattering (Y1-xCex)3Al5O12 (YAG:Ce 3+) ceramic converters have been investigated. The hexagonal-lattice TiO2 patterns were fabricated by an electron beam lithography process. The optimized yellow directional light extraction enhancement by a factor of 4.4 is achieved with a 2-D photonic crystal layer having a diameter of 430 nm, a lattice constant of 590 nm, and a height of 350 nm. A 3-D finite-difference time-domain model has also been developed to study the geometric parameters of the photonic crystal layer, yielding results that are consistent with our measured data.

In this study, we examine thermodynamic photoinduced disorder in AlGaN nanowires through their steady-state and transient photoluminescence properties. We correlate the energy exchange during the photoexcitation and photoemission processes of the light–solid reaction and the generation of photoinduced entropy of the nanowires using temperature-dependent (6 K to 290 K) photoluminescence. We observed an oscillatory trend in the generated entropy of the system below 200 K, with an oscillation frequency that was significantly lower than what we have previously observed in InGaN/GaN nanowires. In contrast to the sharp increase in generated entropy at temperatures close to room temperature in InGaN/GaN nanowires, an insignificant increase was observed in AlGaN nanowires, indicating lower degrees of disorder-induced uncertainty in the wider bandgap semiconductor. We conjecture that the enhanced atomic ordering in AlGaN caused lower degrees of disorder-induced uncertainty related to the energy of states involved in thermionic transitions; in keeping with this conjecture, we observed lower oscillation frequency below 200 K and a stable behavior in the generated entropy at temperatures close to room temperature.