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Correlation Between Electrical Performance and Gate Width of GaN-Based HEMTs
- Source :
- IEEE Electron Device Letters. 43:1199-1202
- Publication Year :
- 2022
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2022.
- Subjects :
- Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Subjects
Details
- ISSN :
- 15580563 and 07413106
- Volume :
- 43
- Database :
- OpenAIRE
- Journal :
- IEEE Electron Device Letters
- Accession number :
- edsair.doi...........789dfdcea0d43d50f5ab1e90a28bb94b
- Full Text :
- https://doi.org/10.1109/led.2022.3183293