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201 results on '"HUbers, H.-W."'

6. New Series of Standards VDI/VDE 5590 on Terahertz Systems

Author

Becker, S., primary, Beckmann, J., additional, Cojocari, O., additional, Feige, V., additional, Fischer, B., additional, Frank, S. van, additional, Friederich, F., additional, Globisch, B., additional, Hechtfischer, G., additional, Hens, K., additional, Hubers, H.-W., additional, Jelonnek, J., additional, Jonuscheit, J., additional, Kehrt, M., additional, Keil, A., additional, Kleine-Ostmann, T., additional, Liebermeister, L., additional, Mayr, M., additional, Nusler, D., additional, Peichl, M., additional, Peters, O., additional, Schur, J., additional, Sprenger, T., additional, Steiger, A., additional, Vieweg, N., additional, and Wilk, R., additional

Published
2021
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8. SQUID-readout for the superconducting nanowire single-photon detector

Author

Kirste, A., Semenov, A., Hubers, H.-W., Drung, D., Peters, M., Schurig, T., Il'in, K.S., and Siegel, M.

Subjects
Niobium -- Electric properties, Superconducting quantum interference devices -- Evaluation, Photon detectors -- Design and construction, Business, Electronics, Electronics and electrical industries
Published
2009

9. Temperature dependence of the Fermi level in HgCdTe narrow-gap bulk films at different mercury vacancy concentrations

Author

null Morozov S. V., null Hubers H.-W., null Pavlov S., null Ikonnikov A. V., null Rumyantsev V. V., null Zholudev M. C., and null Kozlov D. V.

Abstract

We calculate Fermi level position in bulk HgCdTe with cadmium fraction from 19 to 22% as a function of temperature for different concentrations of mercury vacancies forming double-charged acceptors with ionization energies of 11 and 21 meV for neutral and singly charged states respectively. The concentration of free carriers in the bands at different temperatures and the proportion of acceptor centres in different charge states are calculated as well. The results explain the fast temperature quenching of photoconductivity involving the vacancies states. It is also shown that in a p-type material conductivity dependence on temperature includes an exponential growth region with a characteristic energy much greater than a half of the bandgap at zero temperature expected for an intrinsic semiconductor. Keywords: narrow-gap semiconductors, HgCdTe, Fermi level, doubly charged acceptors.

Published
2022

10. Terahertz gain on shallow donor transitions in silicon

Author

Zhukavin, R.Kh., Shastin, V.N., Pavlov, S.G., Hubers, H.-W., Hovenier, J.N., Klaassen, T.O., and van der Meer, A.F.G.

Subjects
Silicon compounds -- Chemical properties, Silicon compounds -- Research, Electron donor-acceptor complexes -- Research, Electron donor-acceptor complexes -- Chemical properties, Physics
Abstract

The small signal gain measurements of optically excited terahertz Si:P and Si:Bi lasers are presented. It is found that the silicon lasers are optically excited with radiation from a free electron laser or a C[O.sub.2] laser.

Published
2007

12. Bandwidth of a hot-electron bolomoeter mixer according to the hotspot model

Author

Semenov, A and Hubers, H-W

Subjects
Electrons -- Research, Superconductive devices -- Research, Superconductivity -- Research, Business, Electronics, Electronics and electrical industries
Abstract

Research is presented describing the study of terahertz heterodyne receivers to develop a model for hotspot bandwidth mixers using hot-electron bolometers.

Published
2001

14. Перестройка спектра терагерцового стимулированного излучения при внутрицентровом оптическом возбуждении одноосно-деформированного Si : Bi

Author

Жукавин, Р.Х., primary, Ковалевский, К.А., primary, Павлов, С.Г., primary, Deb mann, N., primary, Pohl, A., primary, Цыпленков, В.В., primary, Абросимов, Н.В., primary, Riemann, H., primary, Hubers, H.-W., primary, and Шастин, В.Н., primary

Published
2020
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15. Релаксация возбужденных состояний мышьяка в деформированном германии

Author

Ковалевский, К.А., primary, Чопорова, Ю.Ю., primary, Жукавин, Р.Х., primary, Абросимов, Н.В., primary, Павлов, С.Г., primary, Hubers, H.-W., primary, Цыпленков, В.В., primary, Кукотенко, В.Д., primary, Князев, Б.А., primary, and Шастин, В.Н., primary

Published
2020
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16. Heterodyne measurements of a NbN superconducting hot electron mixer at terahertz frequencies

Author

Yagoubovv, P., Kroug, M., Merkel, H., Kollberg, E., Schubert, J., Hubers, H.-W., Schwaab, g., Gol'tsman, G., and Gershenzon, E.

Subjects
Mixers (Electronics) -- Research, Radio receivers -- Research, Superconductors -- Research, Business, Electronics, Electronics and electrical industries
Abstract

Research was conducted to investigate the performance of a NbN based phonon-cooled Hot Electron Bolometric quasioptical mixer in the 0.65-3.12 THz frequency range. The mixer was built from a 3 nm thick NbN film on high resistivity Si and integrated with a planar spiral antenna on the same substrate. The receiver has shown low-noise performance, very broad radio frequency bandwidth and a large dynamic range.

Published
1999

17. Temperature dependence of the barrier height of Pt/n-GaAs Schottky diodes

Author

Hubers, H.-W. and Roser, H.P.

Subjects
Diodes, Schottky-barrier -- Research, Physics
Abstract

A study is conducted on the electrical characteristics of Pt/n-GaAs Schottky diodes. Two groups of Pt/n-GaAs Schottky contacts are observed which vary according to barrier height and the temperature dependence of the barrier height. The first group of contacts have barrier heights of about 1 eV that increase with increasing temperature. The second group has barrier heights of about 0.9 eV that are unaffected by temperature.

Published
1998

18. Video detection and mixing performance of GaAs Schottky-barrier diodes at 30 THz and comparison with metal-insulator-metal diodes

Author

Hubers, H.-W., Schwaab, G.W., and Roser, H.P.

Subjects
Diodes, Schottky-barrier -- Research, Thermionic emission -- Analysis, Physics
Abstract

Thermionic emission was the main mechanism involved in video detection and mixing of GaAs Schottky-barrier diodes at 30 terahertz. Schottky-barrier diodes were less efficient than W-Ni metal-insulator-metal diodes for mixing at 30 terahertz. Both these diode types are useful device types in submillimeter spectroscopy.

Published
1994

22. Стимулированное терагерцовое излучение доноров висмута в одноосно-деформированном кремнии при внутрицентровом оптическом возбуждении

Author

Жукавин, Р.Х., primary, Павлов, С.Г., primary, Pohl, A., primary, Абросимов, Н.В., primary, Riemann, H., primary, Redlich, B., primary, Hubers, H.-W., primary, and Шастин, В.Н., primary

Published
2019
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23. Химический сдвиг и энергия обменного взаимодействия 1s состояний доноров магния в кремнии. Возможность стимулированного излучения

Author

Шастин, В.Н., primary, Жукавин, Р.Х., primary, Ковалевский, К.А., primary, Цыпленков, В.В., primary, Румянцев, В.В., primary, Шенгуров, Д.В., primary, Павлов, С.Г., primary, Шуман, В.Б., primary, Порцель, Л.М., primary, Лодыгин, А.Н., primary, Астров, Ю.А., primary, Абросимов, Н.В., primary, Klopf, J.M., primary, and Hubers, H.-W., primary

Published
2019
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27. XXII Международный симпозиум Нанофизика и наноэлектроника", Нижний Новгород, 12-15 марта 2018 г. Расчет состояний многозарядных примесно-дефектных центров в эпитаксиальных слоях Hg-=SUB=-1-x-=/SUB=-Cd-=SUB=-x-=/SUB=-Te

Author

Козлов, Д.В., primary, Румянцев, В.В., primary, Морозов, С.В., primary, Кадыков, А.М., primary, Фадеев, М.А., primary, Hubers, H.-W., primary, and Гавриленко, В.И., primary

Published
2018
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28. Intrinsic detection efficiency of superconducting nanowire single-photon detectors with different thicknesses

Author

Hofherr, M., Rall, D., Ilin, K., Siegel, M., Semenov, A., Hubers, H.-W., and Gippius, N.A.

Subjects
SPECT imaging -- Usage, Wavelength -- Analysis, Physics
Abstract

Several experiments are conducted to determine the intrinsic detection efficiency of the various superconducting nanowire single-photon detectors with different thicknesses. The detection efficiency is shown to be highly dependent on the wire thicknessn and the wavelength.

Published
2010

29. Influence of an electric field on the operation of terahertz intracenter silicon lasers

Author

Pavlov, S.G., Bottger, U., Abrosimov, N.V., Irmscher, K., Riemann, H., and Hubers, H.-W.

Subjects
Electroluminescence -- Measurement, Phase-locked loops -- Analysis, Phosphorus -- Optical properties, Phosphorus -- Electric properties, Silicon -- Electric properties, Silicon -- Optical properties, Physics
Abstract

A study was conducted to determine the influence of a pulsed electric field on the intracenter population inversion between phosphorus donor states in silicon. The appearance of a current through the laser sample resulted in a fast quenching of the laser emission that indicated a reduction in the inversed population between the laser states.

Published
2010

30. D(super -) centers in intracenter Si:P lasers

Author

Zhukavin, R.Kh., Pavlov, S.G., Kovalevsky, K.A., Hubers, H.-W., Riemann, H., and Shastin, V.N.

Subjects
Photoionization -- Analysis, Silicon -- Chemical properties, Silicon -- Optical properties, Chemical lasers -- Chemical properties, Chemical lasers -- Optical properties, Lasers in chemistry -- Chemical properties, Lasers in chemistry -- Optical properties, Carbon dioxide lasers -- Research, Physics
Abstract

A detailed theoretical and experimental investigation of the influence of D- centers on the gain and threshold of the terahertz Si:P laser when excited by irradiation from a CO2 laser is presented. The results revealed that absorption by D- centers terminates the laser action in Si:P lasers with small compensation for pump intensities less than 1 kW cm(super -2).

Published
2005

39. Поглощение и излучение в терагерцовом диапазоне частот при фотоионизации акцепторов в одноосно-деформированном кремнии

Author

Жукавин, Р.Х., primary, Ковалевский, К.А., primary, Орлов, М.Л., primary, Цыпленков, В.В., primary, Hubers, H.-W., primary, Dessmann, N., primary, Козлов, Д.В., primary, and Шастин, В.Н., primary

Published
2016
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