Temperature dependence of the barrier height of Pt/n-GaAs Schottky diodes

Authors :: Hubers, H.-W.
Roser, H.P.
Source :: Journal of Applied Physics. Nov 1, 1998, Vol. 84 Issue 9, p5326, 5 p.
Publication Year :: 1998
Abstract: A study is conducted on the electrical characteristics of Pt/n-GaAs Schottky diodes. Two groups of Pt/n-GaAs Schottky contacts are observed which vary according to barrier height and the temperature dependence of the barrier height. The first group of contacts have barrier heights of about 1 eV that increase with increasing temperature. The second group has barrier heights of about 0.9 eV that are unaffected by temperature.