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1. Alternative Measurement Approach for the Evaluation of Hot-Electron Degradation in p-GaN Gate AlGaN/GaN Power HEMTs

2. Improved expressions of noise parameters for InP HEMTs.

3. Alternative Measurement Approach for the Evaluation of Hot-Electron Degradation in p-GaN Gate AlGaN/GaN Power HEMTs.

4. Effects of a Spike-Annealed HfO 2 Gate Dielectric Layer on the On-Resistance and Interface Quality of AlGaN/GaN High-Electron-Mobility Transistors.

5. Estimation of Thermal Resistance of AlGaN/GaN HEMT Using CAD

7. Optimization of Epitaxial Structures on GaN-on-Si(111) HEMTs with Step-Graded AlGaN Buffer Layer and AlGaN Back Barrier.

8. Effect of GaN Cap Thickness on the DC Performance of AlGaN/GaN HEMTs.

9. An Improved Method for InP HEMT Noise-Parameter Determination Based on 50-Ω Noise Measurements

10. Improvement of AlGaN/GaN High-Electron-Mobility Transistor Radio Frequency Performance Using Ohmic Etching Patterns for Ka-Band Applications.

11. Effect of GaN Cap Thickness on the DC Performance of AlGaN/GaN HEMTs

12. Projecting GaN HEMTs lifetimes under typical stresses commonly observed in DC-DC converters

13. Breakdown enhancement and hot electrons mitigation for p-GaN gate HEMTs by electric field modulation

14. Three-Phase Motor Inverter and Current Sensing GaN Power IC.

15. AlGaN/GaN HEMT Based pH Detection Using Atomic Layer Deposition of Al 2 O 3 as Sensing Membrane and Passivation.

16. Design and Analytical Assessment of Non-Ideal Ion-Sensitive β-MIS-(AlGa) 2 O 3 /Ga 2 O 3 High Electron Mobility Transistor.

20. GaN power converter and high-side IC substrate issues on Si, p-n junction, or SOI

21. Low‐Fluence Neutron Irradiation Effects on AlGaN/GaN HEMTs.

22. 1.7 kV normally-off p-GaN gate high-electron-mobility transistors on a semi-insulating SiC substrate.

23. Analysis of Dead-Time Energy Loss in GaN-Based TCM Converters With an Improved GaN HEMT Model.

24. A Wide Bandwidth GaN Switching Power Amplifier of Active Magnetic Bearing for a Flywheel Energy Storage System.

25. A 400-V Half Bridge Gate Driver for Normally-Off GaN HEMTs With Effective Dv/Dt Control and High Dv/Dt Immunity.

26. Low Parasitic-Inductance Packaging of a 650 V/150 A Half-Bridge Module Using Enhancement-Mode Gallium-Nitride High Electron Mobility Transistors.

27. Degradation and Recovery of GaN HEMTs in Overvoltage Hard Switching Near Breakdown Voltage.

28. Improvement of AlGaN/GaN High-Electron-Mobility Transistor Radio Frequency Performance Using Ohmic Etching Patterns for Ka-Band Applications

29. An Asymmetric π - Gate MOSHEMT Architecture for High Frequency Applications

30. A new analytical model of drain current and small signal parameters for AlGaN-GaN high-electron-mobility transistors

31. Failure Physics and Reliability of GaN‐Based HEMTs for Microwave and Millimeter‐Wave Applications: A Review of Consolidated Data and Recent Results.

32. Short-Circuit Characteristics and High-Current Induced Oscillations in a 1200-V/80-mΩ Normally-Off SiC/GaN Cascode Device.

33. A Current Limiting Strategy for WBG-Based Solid-State Circuit Breakers With Series-Connected Switching Cells.

34. Effect of Geometrical and Physical parameters of AlGaN/GaN HEMT on the electrical characteristics with AlN spacer layer.

35. Monolithic GaN-Based Driver and GaN Switch With Diode-Emulated GaN Technique for 50-MHz Operation and Sub-0.2-ns Deadtime Control.

36. Simulation Study on the Structure Design of p-GaN/AlGaN/GaN HEMT-Based Ultraviolet Phototransistors.

37. Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review.

38. Monte Carlo Investigation of High-Field Electron Transport Properties in AlGaN/GaN HFETs.

39. Single-Step Electron Beam Evaporation for Schottky/Ohmic Drain in GaN-on-Si HEMTs Fabrication.

40. A Neural Network-Based Hybrid Physical Model for GaN HEMTs.

41. Enhanced Power Conversion Capability of Class-E Power Amplifiers With GaN HEMT Based on Cross-Quadrant Operation.

42. Modified PWM Scheme to Reduce Reverse Conduction Loss in GaN-Based Independently Controlled Multiple Output Flyback Converter.

43. GaN on Engineered Bulk Silicon Power Integration Platform With Avalanche Capability Enabled by Built-in Si PN Junctions.

44. Linearity Enhancement of AlGaN/GaN HEMTs With Selective-Area Charge Implantation.

45. The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs.

46. Gate Leakage and Reliability of GaN -Channel FET With SiNₓ/GaON Staggered Gate Stack.

47. Total Ionizing Dose and Annealing Effects on Shift for p-GaN Gate AlGaN/GaN HEMTs.

48. GaN Ring Oscillators Operational at 500 °C Based on a GaN-on-Si Platform.

49. Analysis of the Stress Wave Characteristic Parameter of Cascode GaN HEMT.

50. Unclamped-Inductive-Switching Behaviors of p-GaN HEMTs at Cryogenic Temperature.

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