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GaN on Engineered Bulk Silicon Power Integration Platform With Avalanche Capability Enabled by Built-in Si PN Junctions.
- Source :
- IEEE Electron Device Letters; Nov2022, Vol. 43 Issue 11, p1826-1829, 4p
- Publication Year :
- 2022
-
Abstract
- A GaN on engineered bulk silicon (GaN-on-EBUS) power IC platform featuring an industry-standard 200-V GaN power HEMT epi-structure has been recently demonstrated, showing effective isolation and crosstalk suppression between the high-side (HS) and low-side (LS) GaN transistors in half-bridge configuration. In this work, we scale up the vertical breakdown voltage (BV) of the GaN film on the EBUS substrate to be over 600 V. Meanwhile, the built-in back-to-back PN junctions along the trench created in the Si substrate are employed to provide an overvoltage-protection scheme through their intrinsic avalanche capability for the overlaying GaN half-bridge circuit. [ABSTRACT FROM AUTHOR]
- Subjects :
- BREAKDOWN voltage
AVALANCHES
SILICON
BRIDGE circuits
Subjects
Details
- Language :
- English
- ISSN :
- 07413106
- Volume :
- 43
- Issue :
- 11
- Database :
- Complementary Index
- Journal :
- IEEE Electron Device Letters
- Publication Type :
- Academic Journal
- Accession number :
- 160687665
- Full Text :
- https://doi.org/10.1109/LED.2022.3208909