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GaN on Engineered Bulk Silicon Power Integration Platform With Avalanche Capability Enabled by Built-in Si PN Junctions.

Authors :
Lyu, Gang
Feng, Sirui
Zhang, Li
Chen, Tao
Wei, Jin
Chen, Kevin J.
Source :
IEEE Electron Device Letters; Nov2022, Vol. 43 Issue 11, p1826-1829, 4p
Publication Year :
2022

Abstract

A GaN on engineered bulk silicon (GaN-on-EBUS) power IC platform featuring an industry-standard 200-V GaN power HEMT epi-structure has been recently demonstrated, showing effective isolation and crosstalk suppression between the high-side (HS) and low-side (LS) GaN transistors in half-bridge configuration. In this work, we scale up the vertical breakdown voltage (BV) of the GaN film on the EBUS substrate to be over 600 V. Meanwhile, the built-in back-to-back PN junctions along the trench created in the Si substrate are employed to provide an overvoltage-protection scheme through their intrinsic avalanche capability for the overlaying GaN half-bridge circuit. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
07413106
Volume :
43
Issue :
11
Database :
Complementary Index
Journal :
IEEE Electron Device Letters
Publication Type :
Academic Journal
Accession number :
160687665
Full Text :
https://doi.org/10.1109/LED.2022.3208909