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Zinc oxide, which has photocatalytic activity, is used as a white pigment in cosmetics. With cosmetics containing zinc oxide, some sebum on the skin is broken down by the UV rays of the sun. In this study, in order to suppress the photocatalytic activity of zinc oxide, zinc oxide was added to an aqueous solution of sodium pyrophosphate and shaken, so that novel white pigment coated with zinc phosphate having no photocatalytic activity was prepared for use in cosmetics. The chemical composition, powder properties, photocatalytic activity, hue (visible light reflectance and L* a* b* values), and smoothness of the resulting powder material were studied. Part of the zinc oxide reacted to zinc phosphate by this pyrophosphate treatment. The photocatalytic activity of zinc oxide was suppressed by this zinc phosphate coating. The resulting sample had sufficiently high reflectance in the visible light region and a high L* value in the L*a*b* color space. The treated samples had lower static friction resistance than the original zinc oxide. Judging from the results of photocatalytic activity, L* value, and smoothness, the optimum conditions were the molar ratio P/Zn of 1/4 for 6 h of shaking the mixture.

Neodymium-iron-boron alloy, Nd2Fe14B, is used as a material for magnets. Neodymium is one of the valuable and expensive rare earth elements and is often recovered to reduce costs and environmental impact. Recently, a method for recovering neodymium as neodymium phosphate from mixed solutions was reported. This method was very useful because the main component of rare earth ores is rare earth phosphates, and there are well-established methods for refining rare earths from rare earth phosphates. This study attempts to obtain neodymium phosphate using acid to dissolve waste magnets, reducing agent, phosphoric acid, and pH adjuster. The diluted acid (hydrochloric acid and nitric acid), amount of ascorbic acid and phosphoric acid, and the pH values were studied to clear the suitable conditions. The color of the heat-treated product, the precipitate yield, and the Fe/Nd molar ratio indicated that a low concentration of acid is suitable and ascorbic acid is required. Excessive use of phosphoric acid improved the precipitate composition. The high pH value decreased the selectivity of neodymium phosphate due to the easy formation of iron phosphate and hydroxide. The process addressed in this study is very promising because it does not require heating at high temperatures or special reagents.

Novel blue pigments were prepared from copper, magnesium, aluminum nitrate solutions and phosphoric acid with pH adjustments (pH 5, 7, 9). The obtained precipitates were heated at 300, 500, and 700 °C for 1 h. The precipitates and their thermal products were estimated with X-ray diffraction (XRD), infrared (IR) spectra, ultraviolet–visible (UV–Vis) reflectance spectra, and L*a*b* color space. Sample without heating is light blue powder. By heating at 300 °C, the blueness of samples decreased. The hue of samples became darker by heating. The best condition for the unheated sample was pH 7, and for the heated sample was pH 5 at 300 °C. Samples prepared at Cu/Mg = 1/1 showed a* and b* values closer to zero than samples prepared with Cu/Mg = 1/0. These materials have potential as new inorganic blue pigments for inks and paints.

Funding Acknowledgements Type of funding sources: None. Background Baseline and post-procedural elevations in serum troponin-T levels are associated with increased morbidity and mortality following transcatheter aortic valve replacement (TAVR). However, the prognostic impact of change in serum troponin-T level following TAVR remains unknown. Methods Among the patients with severe aortic stenosis who underwent TAVR, those with baseline serum troponin-T level ≥51.5 ng/L were excluded. The impact of increases in serum troponin-T level to an abnormally high range (≥51.5 ng/L) following TAVR on 2-year cardiovascular death or heart failure readmissions was investigated. Results Among 189 included patients (median 86 years old, 28% men), serum troponin-T level increased in 79 patients following TAVR. An increase in serum troponin-T was associated with a higher rate of 30-day adverse events, predominantly due to pacemaker implantation for complete atrio-ventricular block, and a higher 2-year cumulative incidence of the primary endpoint (hazard ratio 3.97, 95% confidence interval 1.51-10.4, p = 0.005) adjusted for the use of balloon-expandable valve and post-TAVR pacemaker implantation (Figure 1). Conclusion Post-procedural increase in serum troponin-T level was associated with adverse clinical outcomes following TAVR. Abstract Figure. Cumulative incidence of endpoint

Catalytically active cerium dioxide is used as light reflection materials for cosmetic applications. Therefore, cosmetics containing this pigment too much cause oxidation of the skin. Therefore, the substitute for cerium dioxide is required to prepare the cosmetics without catalytic activity. Herein, as novel white pigments for use in cosmetics, cerium phosphates were prepared from cerium oxalate under various conditions. The chemical composition, powder properties, catalytic activity, color phase, and smoothness of the cerium phosphates were evaluated. All samples had weak unknown peaks in XRD patterns. Samples prepared at high temperature and for long time indicated the peaks of phosphate in IR spectra. Samples prepared in this work had no photo and oxidation catalytic activities. Samples prepared at high temperature and for long time indicated enough high whiteness and high smoothness.

Photocatalytically active titanium dioxide and zinc oxide are used as a white pigment for cosmetics, leading to decomposition of a certain degree of sebum on the skin upon exposure to the ultraviolet radiation in sunlight. Herein, as novel white pigments for use in cosmetics, titanium-zinc phosphates were prepared from titanium sulfate, zinc sulfates, and phosphoric acid. The chemical composition, powder properties, photocatalytic activity, color phase, smoothness, and acid resistance of the titanium-zinc phosphates were evaluated. Samples prepared at high titanium ratio were easy to be amorphous phase, on the other hand, samples prepared at high zinc ratio indicated the X-ray diffraction peaks of zinc phosphate dihydrate. The photocatalytic activity of these titanium-zinc phosphate particles was low; thus these pigments should not induce decomposition of sebum on the skin. All samples prepared in this study exhibited high reflectance within the range of visible light. The substitution with titanium is effective to improve acid resistance of zinc phosphate white pigments.

Neodymium iron boron alloy, Nd2Fe14B, is used in the manufacture of magnets. Neodymium is one of the rare earth elements, so it is valuable and expensive. In order to protect this rare earth resource, it is required to collect, reuse, and recyle rare earth elements. Recently, a new method for recovering neodymium phosphate from mixed solutions has been reported, avoiding the difficulties reported by previous methods. Since rare earth phosphate is the main component of rare earth ore, this new phosphate process was proposed. Neodymium phosphate was precipitated selectively from iron-neodymium mixed aqueous solution by 2 step processes with pH adjustments in this work. With this method, it was possible to separate neodymium and iron without using high temperatures or specialized equipment. The optimum conditions were determined by evaluating precipitation by yield, Fe/Nd ratio, hue, UV–visible reflectance spectra, X-ray diffraction, and infrared spectroscopy. In step I where pH was adjusted using sodium hydroxide, iron hydroxide was precipitated. Then, phosphoric acid was added, and the pH was further adjusted to obtain a neodymium phosphate precipitate as step II. The optimum conditions of this separation method were clarified.

A novel red pigment, sodium manganese phosphate (NaMnPO4), imitating natrophilite, was synthesized from manganese carbonate by heating under various conditions. The powders obtained were investigated by X-ray diffraction (XRD) analysis, infrared spectroscopy, ultraviolet-visible reflectance spectroscopy, and L*a*b* color space. Samples synthesized at 500-800 °C presented XRD patterns associated with NaMnPO4. By heating at a higher temperature, the samples exhibited lighter color. The sample synthesized at 700 °C indicated the highest a* value. Furthermore, the effects of varying relative amounts of constituents were also studied. The temperature and period of heating, volume of water, and phosphate content affected the color phase of the pigments. Resumo Um novo pigmento vermelho, fosfato de sódio e manganês (NaMnPO4), imitando a natrofilita, foi sintetizado a partir de carbonato de manganês por aquecimento em várias condições. Os pós obtidos foram investigados por análise de difração de raios X, espectroscopia no infravermelho, espectroscopia de reflectância ultravioleta-visível e espaço de cor L*a *b*. Amostras sintetizadas a 500-800 °C apresentaram difratogramas de raios X associados ao NaMnPO4. Ao aquecer em temperatura mais elevada, as amostras exibiram cor mais clara. A amostra sintetizada a 700 °C indicou o maior valor a*. Além disso, os efeitos de diferentes quantidades relativas de constituintes também foram estudados. A temperatura e o tempo de aquecimento, volume de água e teor de fosfato afetaram a cor dos pigmentos.

Iron phosphate was prepared from iron nitrate and phosphoric acid with a surfactant, pentaethylene glycol mono dodecyl ether. The chemical composition of the obtained samples was estimated from ICP and XRD measurements. Particle shape and size distribution were observed by SEM images and laser diffraction / scattering methods. Further, the catalytic activity was studied with the decomposition of the complex between formaldehyde, ammonium acetate, and acetylacetone. The peaks of FePO4 were observed in XRD patterns of samples prepared in Fe/Ce=10/0 and then heated at 600 ºC. Other samples were amorphous in XRD patterns. Iron-cerium phosphates had high catalytic activity for the decomposition of the complex. Fosfato de ferro foi preparado a partir do nitrato de ferro e ácido fosfórico com um surfactante éter monododecil pentaetileno glicol. A composição química das amostras obtidas foi estimada a partir de medidas por ICP e DRX. A distribuição e forma das partículas foram observadas por imagens de MEV e o pelo método de espalhamento de laser. A atividade catalítica foi estudada com a decomposição do complexo entre formaldeido, acetato de amônio e acetilacetona. Os picos de FePO4 foram observados nos padrões de DRX das amostras preparadas Fe/Ce=10/0 e então aquecidas a 600 ºC. Outras amostras foram de padrões de DRX amorfo. Ferro-fosfatos de cério tiveram alta atividade catalítica para a decomposição do complexo.

Phosphates have been used for catalyst, adsorbent and so on. These applications required a large specific surface area of materials. Therefore, to improve their specific surface area, malonic acid, propionic acid, glycine, n-butylamine and urea were added to the preparation of tetravalent cerium phosphate from ammonium cerium nitrate and phosphoric acid solutions. These additives were selected from the viewpoint of the functional groups; in short, acidic sites at both ends of their chemical structures, one-sided acidic site, acidic and basic sites, one-sided basic site and basic sites. The addition of acidic and basic compounds was studied on the chemical composition, powder and functional properties of tetravalent cerium phosphates. By the addition of malonic acid, trivalent cerium orthophosphate was obtained. The specific surface area of the sample prepared with n-butylamine had ten times as large as that of the sample prepared without additives.

Development of the SMES using high temperature superconducting (HTS) coil has progressed as a Japanese national project since FY 2004. The objective of the project is to obtain around twice the normal energy density via an HTS-LTS "hybrid" coil system compared to an LTS coil system. The HTS coil is composed of sixteen double-pancake coils and the double-pancake coil is wound with a Bi2212 Rutherford-type cable. The HTS coil is operated at 4.2 K in liquid helium bath with the LTS coil, and operated at maximum field of 8.9 T. Before we made a hybrid coil system, we verified the design issues using HTS experimental coils. In this paper mechanical compression tests, DC operation tests and thermal runaway tests using the experimental coils are discussed.

Since FY 2004, a four-year Japanese national project has been ongoing to develop an HTS-SMES as a sub-program of the Development of Superconducting Power Network Control Technology. The purpose of this project is to confirm the performance of a high energy density SMES coil with Bi-2212 cables. This coil system is composed of an NbTi outer coil and a Bi-2212 inner coil, consisting of 16 double pancakes. A Bi2212 cable of 140 m length is used for the double-pancake windings, and reinforcing materials are co-wound with the cable. A winding inner diameter of 360 mm was set according to the bending tolerance of the cable. The magnet is to be cooled at 4.2 K by liquid helium in order to obtain high overall current density. In the first year of this project, a conceptual design and various experiments for HTS magnet were carried out. This paper describes the test results of the HTS experimental coil that was developed to evaluate the electrical and thermal characteristics of an HTS. It is important to minimize deterioration and damage to the cable, because such defects cause fatal impact to the coil. Consequentially, high accuracy measurement of V-I characteristics up to10−8 V/cm range was performed in this experiment.

This report describes a basic design of an HTS-SMES coil wound with large current capability Bi-2212 cables. The objective of this development is to evaluate fundamental properties of the coil in a high magnetic field. The coil is comprised of an HTS inner coil wound with Bi-2212 Rutherford cables and an LTS outer backup-field coil wound with NbTi conductors. The Bi-2212 coil is designed to generate a maximum field of 8 T at 4.2 K within the backup field at an operating current of 1584 A. In this study, general specifications of the coil were discussed with some important issues; winding dimensions for a peak field, current density limitation, elasticity of the winding, and protection from the thermal runaway. The coil is fabricated in FY 2006, and testing will be performed in FY 2007. In the experiments, superconducting characteristics of the coil in a high magnetic field will be evaluated

In this work, zinc phosphates were prepared from zinc nitrate and phosphoric acid at various Zn/P ratios as a novel white pigment for use in cosmetics. The chemical composition, powder properties, photocatalytic activity, color phase, moisture retention, and smoothness of the zinc phosphates were studied. Samples prepared at Zn/P = 2/1, 3/2, and 1/1 indicated XRD pattern of Zn3(PO4)2•4H2O. The plane particles were observed in SEM images of sample prepared at Zn/P = 2/1, 3/2 and 1/1. The photocatalytic activity of these zinc phosphate particles was too less to protect the sebum on the skin. The materials prepared at Zn/P = 2/1, 3/2 and 1/1 and their thermal products at 100 °C showed a high reflectance within the range of visible light. Samples prepared at high Zn/P ratio indicated small MIU value. Neste trabalho, os fosfatos de zinco foram preparados a partir de nitrato de zinco e ácido fosfórico variando Zn/P como um novo pigmento branco para utilização em cosméticos. A composição química, propriedades dos pós, atividade fotocatalítica, cor, humidade e textura dos fosfatos de zinco foram estudadas. Amostras preparadas de Zn/P = 2/1, 3/2, e 1/1 indicaram DRX de Zn3(PO4)2•4H2O. As partículas foram observadas por imagens de MEV das amostras preparadas de Zn/P = 2/1, 3/2 e 1/1. A atividade fotocatalítica destas partículas de fosfato de zinco foi muito menor para proteger o sebo da pele. Os materiais preparados de Zn/P = 2/1, 3/2 e 1/1 e os seus produtos térmicos a 100 °C mostrou uma alta reflectância na faixa da luz visível. Amostras preparadas em alta proporção de Zn/P indicaram pequeno valor MIU.

Electromigration performance of vias filled with high temperature (480°C) sputtered Al alloys on Ti glue layers was investigated in comparison with W-stud vias. Electromigration lifetime and failure mode are quite different according to via structures and kinds of Al alloys used. Electromigration lifetime of W-stud via chain and Al–Cu filled via chain depends on the via to via distances, while that of Al–Si–Cu filled via chain does not depend on the via to via distances. Failure mode observations revealed that voids were formed only at a few locations in the test structure in Al–Si–Cu filled via chain while voids were formed at every via in W-stud via chains and Al–Cu filled via chains. It is supposed that Al moves through the Al–Si–Cu filled vias during electromigration test in spite of the existence of the Ti glue layer at the via bottom. The Al transportation, however, was prohibited at W-stud vias and Al–Cu filled vias. Glue Ti deposited at via bottom was converted to Al–Ti–Si alloy in Al–Si–Cu filled vias, while Al 3 Ti alloy was formed at Al–Cu filled via bottom. It is speculated that Al transportation occurs through via bottom Al–Ti–Si alloy layer during electromigration test in the case of Al–Si–Cu filled vias.

The P-channel DINOR flash memory, which uses the band-to-band tunneling induced hot electron (BBHE) program method having the advantages of high scalability, high efficiency, and high oxide reliability, was fabricated by 0.35-/spl mu/m-rule CMOS process and was investigated in detail. An ultra-high programming throughput of less than 8 ns/byte (=4 /spl mu/s/512 byte) and a low current consumption of less than 250 /spl mu/A were achieved by utilizing 512-byte parallel programming. Furthermore, we investigated its endurance characteristics up to 10/sup 6/ program/erase cycles, and window narrowing and G/sub m/ degradation were found to be very small even after 10/sup 6/ cycles. It is thought that the BBHE injection point contributes to the G/sub m/ stability and the oxide-damage-reduced operation contributes to the good window narrowing characteristics. The P-channel DINOR flash memory realizing high programming throughput with low power consumption is one of the strongest candidates for the next generation of high-performance, low-voltage flash memories.

The eSiGe layout effect induced by PC-bounded or STI-bounded eSiGe shows impact on device performance and variability increase. For PC-bounded device, performance degradation could be explained by the mobility loss due to reducing eSiGe volume and less stress strength. For STI-bounded device, performance degradation varies, due to strong interaction between eSiGe fill morphology and device overlap capacitance. This observation was confirmed by an eSiGe fill level study. Compared to PC-bounded eSiGe, STI-bounded devices have increase variation due to eSiGe process.

As a white pigment, titanium oxide is used for cosmetic application. This oxide is well known to have the photo catalytic activity. Therefore, a certain degree of sebum is decomposed by the ultraviolet radiation in the sunlight. In this work, titanium phosphates were prepared as a novel white pigment. Their chemical composition, powder properties, photo catalytic activity, moisture retention and smooth were studied with the addition of urea. These white pigments had little photo catalytic activity. The addition of urea improved the moisture retention of titanium phosphates. The slipping resistance of samples became small by heating, on the other hand, the roughness of samples became small by the addition of urea.

Nissin’s boron and carbon cluster ion implanter CLARIS G2 has been developed for the mass production of next generation CMOS devices. Development of boron cluster implant technique was presented at last IIT conference in 2008 [1]. In this paper, development of carbon cluster (C16Hx+ and C7Hx+) implant technique is described. Carbon cluster implantation has been well productized in terms of throughput, beam quality and lifetime.

For beyond 32 nm NMOS device fabrication, Cluster Carbon co‐implantation process is experimentally evaluated. It is found that using Cluster Carbon co‐implantation, instead of Ge PAI plus single Carbon co‐implantation, Phosphorus (P) TED was suppressed and the junction depth Xj are reduced by 10 nm for SDE condition and by 17 nm for SD condition when the Cluster Carbon effective dose 2×1015/cm2. The sheet resistivity Rs of 280 Ω/sq for SDE condition is increased with the increment of the Carbon dose, but the Rs×Xj product 7156 Ω/sq⋅nm has a minimum value is confirmed. The difference of the Cluster Carbon co‐implantation to the monomer Carbon implantation is evaluated and the Cluster Carbon PAI effect makes higher activation of the P dopnt after annealing.

The mobility‐carrier concentration relation for concentrations greater than 1E20 cm−3 B is shown to depend upon the concentration of scattering defects generated near the surface as a function of the doping and annealing process. This contradicts the Masetti model which assigns a fixed relation for each dopant species, without regard for the doping or annealing process used.

To achieve an ultra-shallow junction formation with low resistivity, Cluster Carbon (CC) co-implantation for NMOS source drain and source drain extension condition are investigated. It is found that using CC co-implantation, Phosphorus (P) TED was suppressed and the lower junction depth Xj is achieved. The sheet resistivity Rs is increased with the increment of the Carbon dose, but the Rs×Xj product has a minimum condition is confirmed. From the experimental data, it is shown that the Cluster Carbon ion implantation (CCII) condition is important to suppress P TED effectively.

In this paper, we describe the performance elements used in our 28nm bulk devices with the gate first high-k/metal gate scheme for high performance applications. By using the innovative stressor integrations including improved stress memory technique (SMT), optimized embedded SiGe process and dual stress liner, Ieff of ∼540/360 uA/um have been obtained for NMOS and PMOS respectively with the gate length of 28nm and pitch of 113.4nm (Ioff =100 nA/um, Vdd=0.85V). Good Vth mis-match (Avt of ∼2.4 mV-um) has been achieved for SRAM devices with the high-k/metal gate, signal-noise-ratio of ∼0.2V has been demonstrated in the high performance SRAM cell (0.152 um2) with Vdd of 0.85V.

The apparatus, which is capable of computing the convolution integrals of electrically programmed functions and graphical data in the form of recorder traces, is described. The recorder trace is scanned by means of an optical scanner involving a multielement photodiode array. The signals from the scan head, which correspond to trace positions on the chart, are processed with analog circuits so arranged that the weighted moving average is accomplished. The over-all accuracy of the system, including the long-term drift of analog computing electronics, is better than 0.5%. To demonstrate the performance, spectroscopic data provided with conventional ir spectrophotometers are processed. This simple processor can also be utilized as a function generator or an instrument simulator.

To develop diagnostic method for terminals in aged XLPE cable lines, an external diagnosis of deterioration signals relating to partial discharge generated in the aged terminal has been investigated. The authors focused on acetylene as the particular gas produced by discharge from the results on partial discharge experiment using sheet specimens with a void. It was indicated from the results that gas analysis, aimed at detection of acetylene in the air in the metal casing of the terminal, had possibility to the applied to the external diagnosis. As result, based on the results of the correlation study between gas analysis results and dismantlement investigation of aged CV cable line terminals, it was determined that it is possible to use acetylene analysis as a deterioration diagnosis method for aged terminals.

For the first time, we demonstrate standard cell gate density of 3650 KGate/mm2 and SRAM cell of 0.124 mum2 for 32 nm CMOS platform technology. Both advanced single exposure (SE) lithography and gate-first metal gate/high-k (MG/HK) process contribute to reduce total cost per function by 50% from 45 nm technology node, which is unattainable by dual exposure (DE) lithography or double patterning (DP) and poly/SiON gate stack.

We report TaCx/HfSiON gate stack CMOS device with simplified gate 1st process from the viewpoints of fixed charge generation and its impact on the device performance. Moderate Metal Gate / High-K dielectric (MG/HK) interface reaction is found to be a dominant factor to improve device performance. By optimizing TaCx composition, fixed charge free TaCx/HfSiON device is successfully fabricated. Also, we have demonstrated that the strain effect in deeply scaled devices can be enhanced by eliminating the fixed charges in HfSiON, for the first time. Utilizing Stress Memorization Technique (SMT) and strained Contact Etch Stop Layer (CESL), Lg = 35 nm high performance TaCx/HfSiON devices is achieved.

For the fist time, low supply voltage SRAM operation with stress-enhanced dopant segregated Schottky (DSS) source/drain transistors is demonstrated. At constant SRAM cell current of 40 muA, we achieve two orders of magnitude lower bit-line leakage than conventional technologies at Vdd=0.7 V, while in case of constant bit-line leakage of 10 nA, supply voltage is successfully reduced down by 0.1 V. DSS technology is promising for low voltage SRAM operation for 32 nm node and beyond.

In this paper, a new SOI BiC-DMOS process based on the 0.25mum CMOS process is introduced. SOI and dielectric isolation enables implementation of wide voltage and various types of lateral power devices. For Nch devices, 40V/60V/ 80V/100V/170V LDMOS and 170V/200V lateral IGBT were developed. The drift layers of LDMOS are optimized respectively. The 0.25mum CMOS process helps not only to shrink low voltage class devices such as 40V LDMOS but also to improve the SOA characteristics of high voltage devices

Rapid thermal annealing technology has been applied to the sintering process for Al-Si alloy. Contact resistance was kept low by this technique, and low contact resistance was maintained even after postsintering heat treatment. The relationship between contact resistance and the number of Si nodules has been investigated. Si nodules and the Si at contact holes are considered to be precipitation nuclei for dissolved Si in Al-Si alloy. Precipitating Si is shared by Si nodules and contact holes after heat treatment. This model explains contact resistance change during heat treatments. >

An Al/TiN stacked structure has been investigated with respect to texture control of the films and their migration resistance. The Al on TiN film was observed to have the same preferred crystal orientation as the underlayer TiN film. TiN film texture can be controlled by changing its deposition conditions. Texture controlled Al films can be formed by using these TiN films. In these stacked structures, Al film with stronger

W irregular growth in low temperature W-CVD processes is a most important problem. We succeeded control of W irregular growth by adjusting the SiH/sub 4//WF/sub 6/ flow ratio, changing of W deposition sequence and adhesion layer annealing in reduction gases at ambient. We describe the control of the W irregular growth in low temperature W-CVD processes and also the mechanism of W irregular growth.

The effect of Ti insertion between Cu and TiN layers on electromigration in Cu/(Ti)/TiN/Ti layered damascene interconnects was investigated. Ti insertion enhanced the wetting property of Cu to underlayer TiN and increased the sheet resistance of the layered film when annealed. This resistance change was caused by diffusion of Ti into the Cu film and resulting in reduction in cross-sectional area of the Cu film. The insertion of thinner Ti with air-exposure before Cu deposition was found to be effective in obtaining a lower sheet resistance for the composite Cu film and for the line resistance of a Cu damascene structure. The air-exposure treatment did not influence the via resistance. The Cu damascene interconnects with Ti insertion have up to 100 times longer electromigration lifetime than those without Ti insertion. Microstructures of the Cu film such as grain size, its distribution and texture were almost the same in samples with and without Ti insertion. The improvement of interface quality between Cu and underlayer, which would have an impact on the diffusivity of Cu atoms at the interface, and the existence of Ti in Cu play an important role in improving electromigration resistance.

To evaluate the CT enteroclysis (CTE)/enterography findings of patients with small-bowel mucosal damage induced by aspirin or non-steroidal anti-inflammatory drugs (NSAIDs) and to compare these findings with the duration of drug use and endoscopic findings.CTE findings of 11 patients (22 lesions) with drug-induced small-bowel damage were reviewed, including 8 NSAID users and 3 aspirin users. Three patients were short-term users (6 months or shorter) and eight were long-term users (3 years or longer). Nine patients also underwent videocapsule endoscopy (VCE) or double-balloon enteroscopy (DBE).Small-bowel abnormalities were visible in 8 of 11 patients (73%) on CTE. Multiple lesions were seen in five patients, including all short-term users. Lesions were classified into three types. Type 1 (mucosal patchy enhancement) was found in four of eight patients (50%, 12 lesions) all were short-term users. Small erosions with mild oedema/redness were shown by DBE. Type 2 (homogeneous hyperenhancement) was found in two of eight patients (25%, four lesions) who were long-term users. Large ulcers with marked oedema/redness were shown by DBE. Type 3 (stratification enhancement) was found in four of eight patients (50%, six lesions), both short-term and long-term users. Annular or large ulcers with strictures were shown by VCE or DBE.On CTE, Type 1 lesions in patients with mostly short-term aspirin or NSAID use, Type 2 lesions in patients with long-term use and Type 3 lesions in both types of patients were detected. CTE may have usefulness for the detection of mild damage.Small-bowel abnormalities owing to aspirin or NSAID present with three different patterns on CTE.

The effect of underlayer texture on Cu film properties and electromigration performance in Cu damascene interconnects have been studied. The Cu film orientation depends strongly on the underlayer texture. The Cu orientation can be controlled by changing the preferred orientation of the TiN underlayer, which has the same cubic structure as the Cu. The Cu film deposited on a highly -oriented TiN underlayer indicates a strong orientation. The atomic arrangement between Cu(111) and TiN(111) planes has a rotational angle within /spl plusmn/10/spl deg/ around the axis in spite of lattice mismatch of 14.7%. In the case of damascene interconnects, sidewalls in a trench affect Cu texture and the dependence of the underlayer texture on the Cu film orientation becomes small as line width decreases. EM performance, however, has been improved by the realization of Cu damascene interconnects with a strong orientation.