Scatter Defects and Hall Scattering Factor For The Mobility of Boron In Silicon

The mobility‐carrier concentration relation for concentrations greater than 1E20 cm−3 B is shown to depend upon the concentration of scattering defects generated near the surface as a function of the doping and annealing process. This contradicts the Masetti model which assigns a fixed relation for each dopant species, without regard for the doping or annealing process used.