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With the promise of nonvolatility, practically infinite write endurance, and short read and write times, magnetic tunnel junction magnetic random access memory could become a future mainstream memory technology.

A dynamic model has been developed that is based on the Preisach approach for ferroelectric capacitors. It accounts for different switching reaction of the dipoles dependent on the applied voltage gradients. A method for extracting the necessary parameters by measuring the coercive voltage versus applied frequency is provided. The model was verified by testing capacitors of different geometries. Excellent agreement was achieved between our measurements and the corresponding circuit simulations. The simulation of a FeRAM-cell with our new dynamic model shows that the bit line signal decreases substantially with fast read/write times.