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Memories of tomorrow
- Source :
- IEEE Circuits and Devices Magazine. 18:17-27
- Publication Year :
- 2002
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2002.
-
Abstract
- With the promise of nonvolatility, practically infinite write endurance, and short read and write times, magnetic tunnel junction magnetic random access memory could become a future mainstream memory technology.
- Subjects :
- Random access memory
Engineering
Hardware_MEMORYSTRUCTURES
business.industry
Spin-transfer torque
Electrical engineering
Short read
Electronic, Optical and Magnetic Materials
Tunnel magnetoresistance
Hardware_INTEGRATEDCIRCUITS
Electronic engineering
Bubble memory
Electrical and Electronic Engineering
business
Instrumentation
Quantum tunnelling
Subjects
Details
- ISSN :
- 87553996
- Volume :
- 18
- Database :
- OpenAIRE
- Journal :
- IEEE Circuits and Devices Magazine
- Accession number :
- edsair.doi...........5c1fb0afe3b9ce6b53313164e0e57106
- Full Text :
- https://doi.org/10.1109/mcd.2002.1035347